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1. 发明授权

US11127886B2 Flip-chip LED with barrier structure 有权
公开(公告)号：US11127886B2
公开(公告)日：2021-09-21
申请号：US15236434
申请日：2016-08-13
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Anhe He , Su-hui Lin , Jiansen Zheng , Kangwei Peng , Xiaoxiong Lin , Chen-ke Hsu
IPC分类号： H01L33/10 , H01L33/46 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/40
摘要： A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.

2. 发明授权

US10297733B2 High-voltage light emitting diode chip and fabrication method 有权
公开(公告)号：US10297733B2
公开(公告)日：2019-05-21
申请号：US15390951
申请日：2016-12-27
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Hou-jun Wu , Jiansen Zheng , Chen-ke Hsu , Anhe He , Chia-en Lee
IPC分类号： H01L33/62 , H01L27/15 , H01L33/22 , H01L33/42
摘要： A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ≤0.4 μm, such as ≤0.3 μm), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

3. 发明授权

US10205057B2 Flip-chip light emitting diode and fabrication method 有权
公开(公告)号：US10205057B2
公开(公告)日：2019-02-12
申请号：US15846146
申请日：2017-12-18
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Anhe He , Su-hui Lin , Jiansen Zheng , Kang-wei Peng , Xiaoxiong Lin , Chen-ke Hsu
IPC分类号： H01L33/60 , H01L33/38 , H01L33/00 , H01L33/12 , H01L33/46
摘要： A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

4. 发明授权

US09825203B2 Light emitting diode chip and fabrication method 有权
公开(公告)号：US09825203B2
公开(公告)日：2017-11-21
申请号：US15186487
申请日：2016-06-19
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jiansen Zheng , Su-Hui Lin , Chen-Ke Hsu , Chih-Wei Chao
IPC分类号： H01L33/24 , H01L33/14 , H01L33/44 , H01L33/38
CPC分类号： H01L33/24 , H01L33/14 , H01L33/145 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0033
摘要： A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

5. 发明授权

US09356190B2 GaN-based LED 有权
标题翻译： GaN基LED
公开(公告)号：US09356190B2
公开(公告)日：2016-05-31
申请号：US14536713
申请日：2014-11-10
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jiansen Zheng , Suhui Lin , Kangwei Peng , Lingyuan Hong , Lingfeng Yin
IPC分类号： H01L33/10 , H01L33/46 , H01L33/32 , H01L33/14
CPC分类号： H01L33/10 , H01L33/14 , H01L33/32 , H01L33/46
摘要： A GaN-based LED includes: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution; and a second reflecting layer over the back side the substrate. The band-shaped or annular distribution can increase a probability light extraction of the LED sideways. By controlling the ratio of lights extracted upwards and sideways, the light-emitting distribution evenness can be adjusted and the uneven heat dissipation can be improved.
摘要翻译： GaN基LED包括：具有正面和背面的基板; 外延层，形成在所述基板的前侧，并且从上到下包括P型层，发光区域和N型层; 形成在P型层上的电流扩散层; 形成在电流扩展层上的P电极; 在所述电流扩展层和所述外延层之间的第一反射层，设置在所述外延层的外围区域的带状分布中; 以及在衬底的背侧上的第二反射层。带状或环形分布可以增加侧向LED的概率光提取。通过控制向上和向侧提取的光的比例，可以调节发光分布均匀性并且可以提高不均匀的散热。

6. 发明授权

US09190572B2 Light emitting diode and fabrication method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US09190572B2
公开(公告)日：2015-11-17
申请号：US14718026
申请日：2015-05-20
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Lingfeng Yin , Suhui Lin , Jiansen Zheng , Lingyuan Hong , Chuangui Liu , Yide Ou , Gong Chen
IPC分类号： H01L33/42 , C23C14/35 , H01L33/38 , H01L33/00 , C23C14/58 , C23C14/02
CPC分类号： H01L33/42 , C23C14/024 , C23C14/086 , C23C14/24 , C23C14/35 , C23C14/58 , C23C14/5806 , H01L33/005 , H01L33/38 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.
摘要翻译：发光二极管包括：基板; 从底部到顶部的发光外延层，通过基板上的第一限制层，发光层和第二限制层的半导体材料层层叠; 在发光外延层的部分区域上的电流阻挡层; 在电流阻挡层上延伸到发光外延层表面并被分成发光区域和非发光区域的透明导电结构，其中非发光区域对应于电流阻挡层的厚度大于发光区域的电流阻挡层，从而在该结构和发光外延层之间形成良好的欧姆接触并降低光吸收; 以及在透明导电结构的非发光区域上的P电极，其保证电流扩展性能并降低工作电压和光吸收。

7. 发明授权

US11557580B2 Method and device for mass transfer of micro semiconductor elements 有权
公开(公告)号：US11557580B2
公开(公告)日：2023-01-17
申请号：US17447325
申请日：2021-09-10
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Zhibai Zhong , Chia-En Lee , Jinjian Zheng , Jiansen Zheng , Chen-Ke Hsu , Junyong Kang
IPC分类号： H01L33/00 , H01L25/16
摘要： A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

8. 发明授权

US10297736B2 Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权
公开(公告)号：US10297736B2
公开(公告)日：2019-05-21
申请号：US15853845
申请日：2017-12-24
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Anhe He , Suhui Lin , Jiansen Zheng , Kangwei Peng , Xiaoxiong Lin , Chenke Hsu
IPC分类号： H01L29/40 , H01L21/00 , H01L33/62 , H01L33/40 , H01L23/00
摘要： A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

9. 发明授权

US10249789B2 Light emitting diode chip and fabrication method 有权
公开(公告)号：US10249789B2
公开(公告)日：2019-04-02
申请号：US15658375
申请日：2017-07-24
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Jiansen Zheng , Su-Hui Lin , Chen-Ke Hsu , Chih-Wei Chao
IPC分类号： H01L33/24 , H01L33/14 , H01L33/44 , H01L33/38
摘要： A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serve as current blocking layer. A current spreading layer covers the light transmission layer and the epitaxial layer not masked by the light transmission layer. A refractive index of the light transmission layer is between those of the epitaxial layer and the holes, indicating a difference of refractive index between the light transmission layer and the epitaxial layer. Light scattering probability can therefore be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

10. 发明授权

US11631601B2 Transfer head for transferring micro element and transferring method of micro element 有权
公开(公告)号：US11631601B2
公开(公告)日：2023-04-18
申请号：US17139976
申请日：2020-12-31
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Chen-ke Hsu , Jiansen Zheng , Xiaojuan Shao , Kechuang Lin
IPC分类号： H01L21/67 , B65G61/00 , H01L21/683
摘要： A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

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