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1. 发明授权

US11631601B2 Transfer head for transferring micro element and transferring method of micro element 有权
公开(公告)号：US11631601B2
公开(公告)日：2023-04-18
申请号：US17139976
申请日：2020-12-31
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Chen-ke Hsu , Jiansen Zheng , Xiaojuan Shao , Kechuang Lin
IPC分类号： H01L21/67 , B65G61/00 , H01L21/683
摘要： A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

2. 发明授权

US10790418B2 Light emitting diode fabrication method 有权
公开(公告)号：US10790418B2
公开(公告)日：2020-09-29
申请号：US14588395
申请日：2014-12-31
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Yi-Jui Huang , Kechuang Lin , Suhui Lin , Jiali Zhuo
IPC分类号： H01L33/50 , H01L33/54
摘要： A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

3. 发明授权

US09312438B2 Nitride light emitting diode and fabrication method thereof 有权
标题翻译：氮化物发光二极管及其制造方法
公开(公告)号：US09312438B2
公开(公告)日：2016-04-12
申请号：US14719269
申请日：2015-05-21
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Wen-Yu Lin , Meng-Hsin Yeh , Kechuang Lin
IPC分类号： H01L33/14 , H01L27/15 , H01L33/00 , H01L33/32 , H01L33/06
CPC分类号： H01L33/14 , H01L27/156 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/32
摘要： An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InxAlyGa1-x-yN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.
摘要翻译：注入具有电流调制层的发光二极管的外延结构，更具体而言，注入高电阻率材料以改变电流传导路径，并且主要结构的实现是生长高电阻率材料（例如，In x Al y Ga 1- x-yN）在N型导电层或P型导电层之间，直到电流传导路径的一部分通过反应炉内的高温H2原位蚀刻暴露，并且生长N型或P-型导电层，型导电层覆盖。这种用于形成没有第二外延生长的电流调制层的设计在N型导电层和P型导电层中提供了更好的扩散路径的注入电流，其更有效地均匀地将电流注入到有源层并改善发光效率。

4. 发明授权

US10916458B2 Transfer head for transferring micro element and transferring method of micro element 有权
公开(公告)号：US10916458B2
公开(公告)日：2021-02-09
申请号：US15859659
申请日：2017-12-31
申请人： XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Chen-Ke Hsu , Jiansen Zheng , Xiaojuan Shao , Kechuang Lin
IPC分类号： H01L21/67 , B65G61/00 , H01L21/683
摘要： A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

5. 发明授权

US08823046B2 Light emitting diode with a current concentrating structure 有权
标题翻译：具有电流集中结构的发光二极管
公开(公告)号：US08823046B2
公开(公告)日：2014-09-02
申请号：US14054787
申请日：2013-10-15
申请人： Xiamen Sanan Optoelectronics Technology Co., Ltd.
发明人： Qunfeng Pan , Jyh-Chiarng Wu , Kechuang Lin , Shaohua Huang
IPC分类号： H01L33/42 , H01L21/00 , H01L33/14 , H01L33/40 , H01L21/42
CPC分类号： H01L33/42 , H01L21/42 , H01L33/145 , H01L33/40
摘要： A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
摘要翻译：发光二极管（LED）包括透明绝缘层; 以及基本上包围透明绝缘层的至少一个透明导电氧化物层，其中所述透明绝缘层和所述至少一个透明导电氧化物层被配置为将通过所述LED的电流分配成更集中于所述LED的外围区域。

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