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1. 发明授权

US07211144B2 Pulsed nucleation deposition of tungsten layers 有权
标题翻译：钨层的脉冲成核沉积
公开(公告)号：US07211144B2
公开(公告)日：2007-05-01
申请号：US10194629
申请日：2002-07-12
申请人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
发明人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
IPC分类号： C30B25/16
CPC分类号： H01L21/28562 , C23C16/14 , C23C16/45523 , C23C16/45525 , C30B25/02 , C30B29/02
摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.
摘要翻译：使用顺序沉积工艺形成钨成核层的方法。钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。此后，从处理室除去从钨沉积产生的反应副产物。在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。这种沉积工艺形成具有良好阶梯覆盖的钨成核层。可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为形成。

2. 发明授权

US07695563B2 Pulsed deposition process for tungsten nucleation 失效
标题翻译：钨成核的脉冲沉积工艺
公开(公告)号：US07695563B2
公开(公告)日：2010-04-13
申请号：US11621040
申请日：2007-01-08
申请人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
发明人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
IPC分类号： C30B25/14
CPC分类号： H01L21/28562 , C23C16/14 , C23C16/45523 , C23C16/45525 , C30B25/02 , C30B29/02
摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.
摘要翻译：在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层处理。该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。在实施例中，还原气体可以含有乙硼烷或硅烷。

3. 发明授权

US07465665B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07465665B2
公开(公告)日：2008-12-16
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

4. 发明授权

US07101795B1 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 有权
$Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer$
标题翻译：使用顺序沉积技术沉积难熔金属层以形成成核层的方法和装置
公开(公告)号：US07101795B1
公开(公告)日：2006-09-05
申请号：US09678266
申请日：2000-10-03
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统特征是使用顺序沉积技术成核基底，其中衬底连续地暴露于第一和第二反应气体，然后使用气相沉积形成层，以使成核层包含在第一和第二反应气体之一中的化合物的大量沉积。

5. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

6. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

7. 发明申请

US20090156003A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20090156003A1
公开(公告)日：2009-06-18
申请号：US12335976
申请日：2008-12-16
申请人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： MING XI , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

8. 发明申请

US20060264031A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 有权
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20060264031A1
公开(公告)日：2006-11-23
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/4763
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

9. 发明申请

US20070218688A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20070218688A1
公开(公告)日：2007-09-20
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

10. 发明授权

US09147578B2 Contact clean by remote plasma and repair of silicide surface 有权
标题翻译：通过远程等离子体接触清洁并修复硅化物表面
公开(公告)号：US09147578B2
公开(公告)日：2015-09-29
申请号：US13004740
申请日：2011-01-11
申请人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
发明人： Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
IPC分类号： H01L21/00 , H01L21/285 , H01L21/02 , H01L21/28 , H01L21/321 , H01L29/66
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.
摘要翻译：实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

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