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1. 发明授权

US08921240B2 Ion implantation method 有权
标题翻译：离子注入法
公开(公告)号：US08921240B2
公开(公告)日：2014-12-30
申请号：US13428481
申请日：2012-03-23
申请人： Yasunori Kawamura , Kyoko Kawakami , Yoshiki Nakashima
发明人： Yasunori Kawamura , Kyoko Kawakami , Yoshiki Nakashima
IPC分类号： H01L21/469 , H01L21/265 , H01J37/08 , H01J37/317
CPC分类号： H01L21/2658 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/26506
摘要： An ion implantation method includes generating CmHy+ ions (m is such an integer as 4≦m≦6, and y is such an integer as 1≦y≦2m+2) using an ion generating material expressed by CnHx (n is such an integer as 4≦n≦6, and x is such an integer as 1≦x≦2n+2), and implanting the ions into a wafer.
摘要翻译：使用由CnHx表示的离子发生材料（n是这样的整数），生成CmHy +离子（m为4＆nlE; m＆nlE; 6的整数，y为1＆nlE; y＆nlE; 2m + 2的整数）作为4＆nlE; n＆nlE; 6，x是1＆nlE; x＆nlE; 2n + 2的整数），并将离子注入晶片。

2. 发明申请

US20120244724A1 ION IMPLANTATION METHOD 有权
标题翻译：离子植入方法
公开(公告)号：US20120244724A1
公开(公告)日：2012-09-27
申请号：US13428481
申请日：2012-03-23
申请人： Yasunori Kawamura , Kyoko Kawakami , Yoshiki Nakashima
发明人： Yasunori Kawamura , Kyoko Kawakami , Yoshiki Nakashima
IPC分类号： H01L21/265
CPC分类号： H01L21/2658 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/26506
摘要： An ion implantation method includes generating CmHy+ ions (m is such an integer as 4≦m≦6, and y is such an integer as 1≦y≦2m+2) using an ion generating material expressed by CnHx (n is such an integer as 4≦n≦6, and x is such an integer as 1≦x≦2n+2), and implanting the ions into a wafer.
摘要翻译：使用由CnHx表示的离子发生材料（n是这样的整数），生成CmHy +离子（m为4＆nlE; m＆nlE; 6的整数，y为1＆nlE; y＆nlE; 2m + 2的整数）作为4＆nlE; n＆nlE; 6，x是1＆nlE; x＆nlE; 2n + 2的整数），并将离子注入晶片。

3. 发明申请

US20150034373A1 WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：接线结构及其制造方法
公开(公告)号：US20150034373A1
公开(公告)日：2015-02-05
申请号：US14379420
申请日：2013-02-13
申请人： Yoshiki Nakashima , Masahiro Kubo , Akinobu Shibuya
发明人： Yoshiki Nakashima , Masahiro Kubo , Akinobu Shibuya
IPC分类号： H05K3/12 , H05K1/03 , H05K1/09
CPC分类号： H05K3/1275 , H05K1/0313 , H05K1/09 , H05K3/4685 , H05K2201/0129 , H05K2201/0137 , H05K2203/0278 , Y10T29/49155
摘要： A wiring structure includes a substrate, a convexoconcave absorption layer including a convexoconcave portion on the substrate, a conductive layer pattern on at least a concave portion of the convexoconcave absorption layer, and an insulating layer pattern over the conductive layer pattern and the convexoconcave absorption layer, on at least the concave portion. This configuration provides a wiring structure and a manufacturing method thereof which enable to form fine multilayer wiring using microcontact printing or the like.
摘要翻译：布线结构包括基板，在基板上包括凸凹部的凸凹陷波吸收层，凹凸吸收层的至少凹部的导电层图案，以及导电层图案和凹凸吸收层之上的绝缘层图案至少在凹部上。这种结构提供了使用微接触印刷等形成精细多层布线的布线结构及其制造方法。

4. 发明授权

US07759658B2 Ion implanting apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US07759658B2
公开(公告)日：2010-07-20
申请号：US12418948
申请日：2009-04-06
申请人： Yoshiki Nakashima
发明人： Yoshiki Nakashima
IPC分类号： H01J37/317 , H01J37/12 , H01J3/14
CPC分类号： H01J37/3171 , H01J2237/04924 , H01J2237/08 , H01J2237/083 , H01J2237/15 , H01J2237/30477 , H01J2237/31701
摘要： An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electrodes arranged in an ion beam traveling direction while forming first, second, and third gaps, said first and fourth electrodes being electrically grounded, wherein positions of centers of curvature of said first and third gaps of said unipotential lens coincide with a position of a scan center of said beam scanner, and wherein a position of a center of curvature of said second gap of said unipotential lens is shifted from the position of the scan center of said beam scanner toward a downstream or upstream side in the ion beam traveling direction.
摘要翻译：提供离子注入装置。离子注入装置包括光束扫描器，光束准直器和设置在所述光束扫描器和所述光束准直器之间的单能透镜，并且包括以离子束行进方向排列的第一，第二，第三和第四电极，同时形成第一第二和第三间隙，所述第一和第四电极是电接地的，其中所述单能透镜的所述第一和第三间隙的曲率中心位置与所述光束扫描器的扫描中心的位置重合，并且其中，所述单能透镜的所述第二间隙的曲率中心从所述光束扫描器的扫描中心的位置向离子束行进方向的下游侧或上游侧偏移。

5. 发明授权

US08872334B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08872334B2
公开(公告)日：2014-10-28
申请号：US13636324
申请日：2011-03-22
申请人： Shintaro Yamamichi , Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori
发明人： Shintaro Yamamichi , Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori
IPC分类号： H01L23/48 , H01L23/538 , H05K3/46 , H05K1/18 , H01L23/00 , H01L23/66 , H01L23/498
CPC分类号： H05K1/185 , H01L23/49816 , H01L23/5384 , H01L23/5389 , H01L23/66 , H01L24/18 , H01L24/19 , H01L2224/04105 , H01L2224/16225 , H01L2224/16227 , H01L2224/18 , H01L2224/32225 , H01L2224/73204 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/1461 , H01L2924/15311 , H01L2924/3511 , H05K3/4605 , H05K2201/09581 , H05K2201/10674 , H05K2203/1469 , H01L2924/00
摘要： In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.
摘要翻译：在包括多个布线层和绝缘层的多层布线结构中的包含半导体元件的半导体器件的制造方法中，将半导体元件安装在硅支撑体上，该硅支撑体的厚度减小到期望的厚度并且配备有多个穿过厚度方向的通孔; 形成绝缘层以嵌入半导体元件; 那么在与硅半导体元件相连的硅支撑体的相对表面上形成多个布线层。因此，可以减少在制造中在半导体元件附近发生的翘曲，从而改善整个半导体器件的翘曲轮廓。此外，可以防止半导体元件变得无用，提高成品率，并且可以生产具有高密度封装性能的薄型半导体器件。

6. 发明申请

US20110175213A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110175213A1
公开(公告)日：2011-07-21
申请号：US13062262
申请日：2009-10-05
申请人： Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
发明人： Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L24/85 , H01L23/13 , H01L23/142 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L24/19 , H01L24/24 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/91 , H01L24/92 , H01L2223/54426 , H01L2223/54473 , H01L2223/6677 , H01L2224/04105 , H01L2224/2402 , H01L2224/24226 , H01L2224/24227 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/484 , H01L2224/48599 , H01L2224/73227 , H01L2224/73265 , H01L2224/73267 , H01L2224/82039 , H01L2224/82047 , H01L2224/85 , H01L2224/92 , H01L2224/92244 , H01L2224/92247 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/078 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2224/83 , H01L2224/82 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.
摘要翻译：半导体器件包括：至少一个具有电极端子的半导体元件; 支撑半导体元件的金属板; 以及覆盖半导体元件并且在表面上交替堆叠的多个绝缘层和布线层以及外部连接端子的布线板，布线层通过通孔彼此电连接。电极端子和外部连接端子经由布线层和通孔中的至少一个电连接。至少一个电极端子，即布线层和通孔，电连接到金属板。

7. 发明申请

US20090256082A1 ION IMPLANTING APPARATUS 失效
标题翻译：离子植入装置
公开(公告)号：US20090256082A1
公开(公告)日：2009-10-15
申请号：US12418948
申请日：2009-04-06
申请人： Yoshiki Nakashima
发明人： Yoshiki Nakashima
IPC分类号： H01J3/14 , H01J37/08
CPC分类号： H01J37/3171 , H01J2237/04924 , H01J2237/08 , H01J2237/083 , H01J2237/15 , H01J2237/30477 , H01J2237/31701
摘要： An ion implanting apparatus is provided. The ion implanting apparatus includes a beam scanner, a beam collimator and a unipotential lens which is disposed between said beam scanner and said beam collimator, and which includes first, second, third, and fourth electrodes arranged in an ion beam traveling direction while forming first, second, and third gaps, said first and fourth electrodes being electrically grounded, wherein positions of centers of curvature of said first and third gaps of said unipotential lens coincide with a position of a scan center of said beam scanner, and wherein a position of a center of curvature of said second gap of said unipotential lens is shifted from the position of the scan center of said beam scanner toward a downstream or upstream side in the ion beam traveling direction.
摘要翻译：提供离子注入装置。离子注入装置包括光束扫描器，光束准直器和设置在所述光束扫描器和所述光束准直器之间的单能透镜，并且包括以离子束行进方向排列的第一，第二，第三和第四电极，同时形成第一第二和第三间隙，所述第一和第四电极是电接地的，其中所述单能透镜的所述第一和第三间隙的曲率中心位置与所述光束扫描器的扫描中心的位置重合，并且其中，所述单能透镜的所述第二间隙的曲率中心从所述光束扫描器的扫描中心的位置向离子束行进方向的下游侧或上游侧偏移。

8. 发明授权

US08710639B2 Semiconductor element-embedded wiring substrate 失效
标题翻译：半导体元件嵌入式布线基板
公开(公告)号：US08710639B2
公开(公告)日：2014-04-29
申请号：US13639735
申请日：2011-02-22
申请人： Katsumi Kikuchi , Shintaro Yamamichi , Hideya Murai , Kentaro Mori , Yoshiki Nakashima
发明人： Katsumi Kikuchi , Shintaro Yamamichi , Hideya Murai , Kentaro Mori , Yoshiki Nakashima
IPC分类号： H01L23/02
CPC分类号： H05K1/185 , H01L21/6835 , H01L23/481 , H01L23/50 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/19 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/82 , H01L24/83 , H01L2221/68345 , H01L2223/6677 , H01L2224/04105 , H01L2224/24225 , H01L2224/24226 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/73267 , H01L2224/83 , H01L2224/92 , H01L2224/92244 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/09701 , H01L2924/10329 , H01L2924/12042 , H01L2924/13091 , H01L2924/1461 , H01L2924/19041 , H05K1/0271 , H05K1/186 , H05K3/4602 , H05K2201/10674 , H05K2203/1469 , H01L2224/81 , H01L2924/00015 , H01L2224/85 , H01L2224/82 , H01L2224/45 , H01L2924/3512 , H01L2924/00 , H01L2224/48
摘要： A wiring substrate in which a semiconductor element is built includes a semiconductor element; a peripheral insulating layer covering at least an outer circumferential side surface of this semiconductor element; and an upper surface-side wiring line provided on the upper surface side of the wiring substrate. The semiconductor element includes an internal terminal electrically connected to the upper surface-side wiring line on the upper surface side of the semiconductor element. This internal terminal includes a first conductive part exposed out of an insulating surface layer of the semiconductor element; an adhesion layer on this first conductive part; and a second conductive part on this adhesion layer. The adhesion layer covers an exposed surface of the first conductive part, and is formed on a portion of the insulating surface layer around the exposed surface of the first conductive part, and the adhesion layer extends around the outer side of an outer edge of this second conductive part so as to surround the second conductive part.
摘要翻译：构成半导体元件的布线基板包括半导体元件; 覆盖该半导体元件的至少外周侧表面的外围绝缘层; 以及设置在布线基板的上表面侧的上表面侧布线。半导体元件包括电连接到半导体元件的上表面侧的上表面侧布线的内部端子。该内部端子包括从半导体元件的绝缘表面层露出的第一导电部件; 在该第一导电部分上的粘附层; 和该粘合层上的第二导电部分。粘合层覆盖第一导电部分的暴露表面，并且形成在第一导电部分的暴露表面周围的绝缘表面层的一部分上，并且粘合层围绕该第二导电部分的外边缘的外侧延伸导电部件以包围第二导电部件。

9. 发明授权

US08692364B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08692364B2
公开(公告)日：2014-04-08
申请号：US13389234
申请日：2010-08-06
申请人： Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori , Shintaro Yamamichi
发明人： Katsumi Kikuchi , Yoshiki Nakashima , Kentaro Mori , Shintaro Yamamichi
IPC分类号： H01L23/06 , H01L23/48 , H01L23/02 , H01L23/522 , H01L21/4763 , H01L21/48
CPC分类号： H05K1/185 , H01L23/49827 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L25/105 , H01L2224/04105 , H01L2224/12105 , H01L2224/24226 , H01L2224/73267 , H01L2224/92 , H01L2225/1035 , H01L2225/1058 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/12044 , H01L2924/1461 , H01L2924/15311 , H01L2924/15331 , H01L2924/19041 , H01L2924/3511 , H05K1/0366 , H05K3/4682 , H05K2201/029 , H05K2201/10674 , H05K2203/063 , H05K2203/1469 , H01L2224/83 , H01L2224/82 , H01L2924/00
摘要： A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism).
摘要翻译：一种半导体器件包括其中嵌入一个或多个半导体元件的嵌入层和一个或多个互连层以及在嵌入层的一侧或两侧上的一个或多个绝缘层。嵌入层包括由增强纤维形成的织布。编织布在其内部具有嵌入半导体元件的开口。开口被布置成使得加强纤维的方向相对于开口的至少一部分的一侧的方向或切线的方向具有预设角度，预设角度不同于方角或零角度（并行）。

10. 发明授权

US08569892B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08569892B2
公开(公告)日：2013-10-29
申请号：US13062262
申请日：2009-10-05
申请人： Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
发明人： Kentaro Mori , Daisuke Ohshima , Shintaro Yamamichi , Hideya Murai , Katsumi Maeda , Katsumi Kikuchi , Yoshiki Nakashima
IPC分类号： H01L23/48 , H01L23/10
CPC分类号： H01L24/85 , H01L23/13 , H01L23/142 , H01L23/49827 , H01L23/5389 , H01L23/552 , H01L24/19 , H01L24/24 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/91 , H01L24/92 , H01L2223/54426 , H01L2223/54473 , H01L2223/6677 , H01L2224/04105 , H01L2224/2402 , H01L2224/24226 , H01L2224/24227 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/484 , H01L2224/48599 , H01L2224/73227 , H01L2224/73265 , H01L2224/73267 , H01L2224/82039 , H01L2224/82047 , H01L2224/85 , H01L2224/92 , H01L2224/92244 , H01L2224/92247 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/078 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15174 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/18162 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2224/83 , H01L2224/82 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.
摘要翻译：半导体器件包括：至少一个具有电极端子的半导体元件; 支撑半导体元件的金属板; 以及覆盖半导体元件并且在表面上交替堆叠的多个绝缘层和布线层以及外部连接端子的布线板，布线层通过通孔彼此电连接。电极端子和外部连接端子经由布线层和通孔中的至少一个电连接。至少一个电极端子，即布线层和通孔，电连接到金属板。

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