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    • 9. 发明授权
    • Thin film magnetic head and method of manufacturing the same
    • 薄膜磁头及其制造方法
    • US08018692B2
    • 2011-09-13
    • US12318925
    • 2009-01-13
    • Takayasu Kanaya
    • Takayasu Kanaya
    • G11B5/33G11B5/48G11B5/60
    • G11B5/3932G01R33/098G11B5/3163G11B5/398G11B5/6005H01L43/08
    • A thin film magnetic head has a magneto-resistive (MR) effect element including an MR effect film formed by sequentially layering a magnetic pinned layer, a nonmagnetic layer and a free layer, and a pair of bias magnetic field application layers formed at junction tapered parts formed on both end parts of the magneto-resistive effect film in the width direction via insulating layers. Further, magnetic pinned layer oxidized films whose thickness is Hx (unit: nm) are disposed on end parts of the magnetic pinned layer at the junction tapered parts, free layer oxidized films whose thickness is Hf (unit: nm) are disposed on end parts of the free layer at the junction tapered parts, and the oxidized films are configured such that the thickness ratio (Hx/Hf) is not more than 0.5. With this configuration, the bias magnetic filed application layers effectively apply a vertical bias magnetic filed to the free layer, resulting in that the thin film magnetic head is realized having a large MR ratio, a small deviation σ of MR waveform asymmetry, and excellent reliability.
    • 薄膜磁头具有磁阻(MR)效应元件,其包括通过顺序层叠磁性被钉扎层,非磁性层和自由层而形成的MR效应膜,以及一对形成在结锥度处的偏置磁场施加层 通过绝缘层在宽度方向上形成在磁阻效应膜的两端部上的部分。 此外,厚度为Hx(单位:nm)的磁性钉扎层氧化膜设置在接合锥形部的磁性被钉扎层的端部,厚度为Hf(单位:nm)的自由层氧化膜设置在端部 的结合锥形部分的自由层,并且氧化膜被配置为使得厚度比(Hx / Hf)不大于0.5。 利用这种结构,偏置磁场施加层有效地将垂直偏置磁场施加到自由层,导致实现了具有大的MR比,小的偏差&sgr的薄膜磁头; 的MR波形不对称,优异的可靠性。
    • 10. 发明申请
    • Manufacturing method of thin-film magnetic head and thin-film magnetic head
    • 薄膜磁头和薄膜磁头的制造方法
    • US20060067010A1
    • 2006-03-30
    • US10971113
    • 2004-10-25
    • Takeo KagamiTakayasu KanayaNoriaki KasaharaKazuki Sato
    • Takeo KagamiTakayasu KanayaNoriaki KasaharaKazuki Sato
    • G11B5/33G11B5/127
    • G11B5/332Y10T29/49043Y10T29/49046Y10T29/49048Y10T29/49052
    • A manufacturing method of a thin-film magnetic head includes a step of depositing an MR multi-layered film on a lower electrode layer, a step of patterning the deposited MR multi-layered film to define a track width, a step of forming a layer containing at least first insulation layer at both track-width direction sides of the patterned MR multi-layered film, a step of depositing a first additional upper metal layer on the patterned MR multi-layered film and on the layer containing at least first insulation layer, a step of patterning the first additional upper metal layer and the MR multi-layered film to define a length in a direction perpendicular to the track-width direction so as to obtain an MR multi-layered structure, a step of forming a second insulation layer to surround the first additional upper metal layer and the MR multi-layered structure, a step of removing by etching the second insulation layer on the first additional upper metal layer formed on the MR multi-layered structure, a step of thereafter, forming a second additional upper metal layer on the first additional upper metal layer and on the second insulation layer, and a step of forming an upper electrode layer on the second additional upper metal layer.
    • 薄膜磁头的制造方法包括在下电极层上沉积MR多层膜的步骤,对沉积的MR多层膜进行图案化以限定磁道宽度的步骤,形成层的步骤 在图案化MR多层膜的两个轨道宽度方向侧上至少含有第一绝缘层,在图案化MR多层膜上沉积第一附加上金属层和在至少包含第一绝缘层的层上沉积步骤 图案化第一附加上金属层和MR多层膜以在垂直于轨道宽度方向的方向上限定长度以获得MR多层结构的步骤,形成第二绝缘体的步骤 层以围绕第一附加上金属层和MR多层结构,通过蚀刻在形成在MR多层结构上的第一附加上金属层上的第二绝缘层去除步骤 其次,在第一附加上金属层和第二绝缘层上形成第二另外的上金属层,以及在第二另外的上金属层上形成上电极层的步骤。