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1. 发明授权

US09911438B2 Magnetic recording and reproducing device comprising a magnetic head first reproducing unit including a magnetic field generator 有权
公开(公告)号：US09911438B2
公开(公告)日：2018-03-06
申请号：US15437920
申请日：2017-02-21
申请人： Kabushiki Kaisha Toshiba
发明人： Taro Kanao , Hirofumi Suto , Koichi Mizushima , Rie Sato
IPC分类号： G11B5/33 , G11B5/31 , G11B5/82
CPC分类号： G11B5/313 , G11B5/332 , G11B5/64 , G11B5/82
摘要： According to one embodiment, a magnetic recording and reproducing device includes a magnetic recording medium, and a magnetic head including a first reproducing unit. The first reproducing unit includes a first magnetic field generator separated from the magnetic recording medium in a first direction, and a first stacked body. At least a portion of the first stacked body is provided between the magnetic recording medium and the first magnetic field generator in the first direction. The first stacked body includes a first magnetic layer, a second magnetic layer separated from the first magnetic layer in a second direction crossing the first direction, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. The first stacked body performs an operation of generating a first alternating magnetic field. The first magnetic field generator generates a first magnetic field.

2. 发明授权

US09245545B1 Short yoke length coils for magnetic heads in disk drives 有权
标题翻译：用于磁盘驱动器磁头的短磁轭长度线圈
公开(公告)号：US09245545B1
公开(公告)日：2016-01-26
申请号：US13899260
申请日：2013-05-21
申请人： Western Digital (Fremont), LLC
发明人： Ut Tran , Yunhe Huang , Keith Y. Sasaki , Curtis V. Macchioni , Zhigang Bai
IPC分类号： H01B13/00 , G11B5/33
CPC分类号： G11B5/332 , G11B5/3123
摘要： A method of forming a single layer inductive coil structure includes forming a first conductive coil on a substrate, forming an insulating layer by atomic layer deposition (ALD) over the first coil and the substrate, and forming one or more additional conductive coils on each of adjacent sides of the first coil insulated from the first coil and the substrate by the insulating layer. A method of forming a stacked layer inductive coil includes forming a cavity in a substrate, forming a first coil in the cavity wherein the cavity has an atomic layer deposition (ALD) layer, forming a second coil in the cavity adjacent to the first coil and separated by the ALD layer from the first coil, forming an insulating layer over the first and second coil, and forming a third coil on the insulating layer.
摘要翻译：形成单层感应线圈结构的方法包括在衬底上形成第一导电线圈，通过在第一线圈和衬底上的原子层沉积（ALD）形成绝缘层，并且在每一个上形成一个或多个附加的导电线圈通过绝缘层与第一线圈和衬底绝缘的第一线圈的相邻侧。形成叠层感应线圈的方法包括在衬底中形成空腔，在空腔中形成第一线圈，其中空腔具有原子层沉积（ALD）层，在邻近第一线圈的空腔中形成第二线圈，以及通过ALD层与第一线圈隔开，在第一和第二线圈上形成绝缘层，并在绝缘层上形成第三线圈。

3. 发明授权

US08734620B2 Method of making a thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization 有权
标题翻译：制造具有垂直各向异性的薄晶种Co / Ni多层膜的方法，用于读取头传感器稳定
公开(公告)号：US08734620B2
公开(公告)日：2014-05-27
申请号：US14048581
申请日：2013-10-08
申请人： Headway Technologies Inc.
发明人： Zhang Kunliang , Li Min , Zhou Yuchen , Zheng Min
IPC分类号： G11B5/39
CPC分类号： G11B5/332 , B82Y10/00 , B82Y25/00 , G11B5/315 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49067 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193 , Y10T428/12819
摘要： A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
摘要翻译：公开了一种用于制造稳定相邻自旋阀中的自由层的硬偏压（HB）结构的方法。 HB结构包括复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖（Co / Ni）x层压板中的垂直磁各向异性（PMA）。（Co / Ni）x沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。在HB层上形成覆盖层以防止后续处理中的蚀刻剂。在初始化之后，HB磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

4. 发明授权

US08563147B2 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization 有权
标题翻译：具有垂直各向异性的薄晶种Co / Ni多层膜，用于读取头传感器稳定
公开(公告)号：US08563147B2
公开(公告)日：2013-10-22
申请号：US12456935
申请日：2009-06-24
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Min Zheng
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/332 , B82Y10/00 , B82Y25/00 , G11B5/315 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49067 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193 , Y10T428/12819
摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
摘要翻译：公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。（Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

5. 发明授权

US08502332B2 Magnetic sensor and magnetic head 有权
标题翻译：磁传感器和磁头
公开(公告)号：US08502332B2
公开(公告)日：2013-08-06
申请号：US13227135
申请日：2011-09-07
申请人： Tomoyuki Sasaki , Tohru Oikawa
发明人： Tomoyuki Sasaki , Tohru Oikawa
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G01R33/093 , G11B5/332 , H01L43/08
摘要： A magnetic sensor 1 comprises a main channel layer 7a having first, second, and third regions 71, 72, 73 and extending in a first direction; a first ferromagnetic layer 12A mounted on the first region 71; a second ferromagnetic layer 12B mounted on the second region 72; a projection channel layer 7b projecting in a direction perpendicular to a thickness direction of the main channel layer 7a from a side face of the third region 73 between the first and second regions 71, 72 in the main channel layer 7a; and a magnetic shield S covering both sides in the thickness direction of the projection channel layer 7b and both sides in the first direction of the projection channel layer 7b and exposing an end face 7c in the projecting direction of the projection channel layer 7b.
摘要翻译：磁传感器1包括具有第一，第二和第三区域71,72,73并沿第一方向延伸的主通道层7a; 安装在第一区域71上的第一铁磁层12A; 安装在第二区域72上的第二铁磁层12B; 在主沟道层7a中的第一和第二区域71,72之间从第三区域73的侧面垂直于主沟道层7a的厚度方向的方向突出的投影通道层7b; 以及覆盖投影通道层7b的厚度方向的两侧和投影通道层7b的第一方向上的两侧的磁屏蔽S，并且在投影通道层7b的突出方向上露出端面7c。

6. 发明授权

US08070554B2 Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权
标题翻译：分布式分流结构，用于研磨电流垂直平面（CPP）头
公开(公告)号：US08070554B2
公开(公告)日：2011-12-06
申请号：US10990926
申请日：2004-11-17
申请人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
发明人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
IPC分类号： B24B49/00
CPC分类号： G11B5/3163 , G11B5/3166 , G11B5/3169 , G11B5/332 , G11B5/3906 , G11B5/40
摘要： An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.
摘要翻译：描述了用于研磨和制造读/写头的装置和方法。研磨方法包括对其中制造读/写头的结构执行第一研磨处理。第一次研磨工艺用于减少第一电阻区域。第一电阻区域位于结构的表面附近。第一个研磨过程是实现第一次研磨基准。研磨方法还包括在第二电阻区域上进行第二研磨处理。第二次研磨过程以比第一次研磨过程低的速度进行。第二次研磨过程是实现第二次研磨基准。第二电阻区域介于第一电阻区域和读/写头之间。第二电阻区域具有与第二电阻区域不同的电阻值。

7. 发明授权

US07816746B2 Spin-tunnel transistor and magnetic reproducing head 有权
标题翻译：旋转晶体管和磁性再现头
公开(公告)号：US07816746B2
公开(公告)日：2010-10-19
申请号：US10669007
申请日：2003-09-24
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： H01L21/70 , H01F10/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/332 , G11B5/3919 , G11B2005/3996 , H01F10/3268 , H01L29/66984 , H01L43/08
摘要： A spin-tunnel transistor having a tunnel barrier layer formed of an antiferromagnetic material which is exchange coupled with a first or second ferromagnetic metal layer of a base B formed adjoining to the antiferromagnetic material, so as to fix magnetization of the adjoining ferromagnetic layer. The base B includes a nonmagnetic metal layer which is formed between the first and second ferromagnetic metal layers and decouple magnetization coupling between the first and second ferromagnetic metal layers. The base B is formed between a collector and an emitter to form tri-terminal device. Those spin-tunnel transistor may be used as a sensor of a magnetic reproducing head used in a hard disk drive.
摘要翻译：一种自旋隧道晶体管，其具有由反铁磁材料形成的隧道势垒层，该反铁磁材料与毗邻于铁磁材料的基底B的第一或第二铁磁性金属层交换耦合，以固定邻接的铁磁层的磁化。基体B包括形成在第一和第二强磁性金属层之间的非磁性金属层，并且使第一和第二铁磁金属层之间的磁化耦合解耦。基极B形成在集电极和发射极之间以形成三端子器件。那些自旋隧道晶体管可以用作在硬盘驱动器中使用的磁再现头的传感器。

8. 发明申请

US20080124459A1 METHODS FOR FORMING A READ SENSOR 审中-公开
标题翻译：形成读取传感器的方法
公开(公告)号：US20080124459A1
公开(公告)日：2008-05-29
申请号：US12030788
申请日：2008-02-13
申请人： Hugo Alberto Emilio Santini
发明人： Hugo Alberto Emilio Santini
IPC分类号： B05D5/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3912 , G11B5/3932 , G11B5/398 , G11B2005/3996 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49155
摘要： A method of making a magnetic head comprises depositing first and second lead layers in first and second end regions which surround a central region; and forming a read sensor in the central region such that a first edge of the read sensor is disposed above an upper edge of the first lead layer and a second edge of the read sensor is disposed above an upper edge of the second lead layer.
摘要翻译：制造磁头的方法包括在包围中心区域的第一和第二端区域中沉积第一和第二引线层; 以及在所述中央区域中形成读取传感器，使得所述读取传感器的第一边缘设置在所述第一引线层的上边缘上方，并且所述读取传感器的第二边缘设置在所述第二引线层的上边缘的上方。

9. 发明申请

US20080123222A1 Superparamagnetic field sensing devices 失效
标题翻译：超顺磁场检测装置
公开(公告)号：US20080123222A1
公开(公告)日：2008-05-29
申请号：US12011545
申请日：2008-01-28
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

10. 发明授权

US07355822B2 Superparamagnetic field sensing device 有权
标题翻译：超顺磁场检测装置
公开(公告)号：US07355822B2
公开(公告)日：2008-04-08
申请号：US11359743
申请日：2006-02-22
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39 , G11R33/09
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

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