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1. 发明授权

US08402635B2 Method of manufacturing a magnetic head including shield layers which surround a MR element 有权
标题翻译：制造包括围绕MR元件的屏蔽层的磁头的方法
公开(公告)号：US08402635B2
公开(公告)日：2013-03-26
申请号：US13052674
申请日：2011-03-21
申请人： Naomichi Degawa , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
发明人： Naomichi Degawa , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3912 , G01R33/093 , G11B5/3163 , G11B5/398 , H01L43/12 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method of manufacturing a magnetic head, including a magneto resistance effect (MR) element that reads a magnetic recording medium, is disclosed. A multilayer film is formed on a shield layer. Unnecessary portions of the multilayer film are removed from both sides of the MR element in a first direction orthogonal to a lamination direction of the multilayer film and parallel to the MR element surface facing the magnetic recording medium. An insulating layer is formed on a surface exposed by removal of the unnecessary portions. An integrated soft magnetic layer covering both sides of the MR element in the first direction and an upper side of the MR element is formed, thereby configuring a second shield layer. An anisotropy application layer is formed on the second shield layer, thereby providing exchange anisotropy to the soft magnetic layer, and magnetizing the soft magnetic layer in a predetermined direction.
摘要翻译：公开了一种制造磁头的方法，该磁头包括读取磁记录介质的磁阻效应（MR）元件。在屏蔽层上形成多层膜。在与多层膜的层叠方向正交的第一方向上并且平行于面向磁记录介质的MR元件表面，从MR元件的两侧除去多余膜的不必要部分。在通过去除不需要的部分暴露的表面上形成绝缘层。形成了在MR元件的第一方向的两侧和MR元件的上侧覆盖的集成软磁性层，从而构成第二屏蔽层。在第二屏蔽层上形成各向异性涂布层，从而为软磁层提供交换各向异性，并在预定方向上使软磁层磁化。

2. 发明申请

US20120250189A1 MAGNETIC HEAD INCLUDING SIDE SHIELD LAYERS ON BOTH SIDES OF A MR ELEMENT 审中-公开
标题翻译：磁头包括一个MR元件两侧的侧面屏蔽层
公开(公告)号：US20120250189A1
公开(公告)日：2012-10-04
申请号：US13074272
申请日：2011-03-29
申请人： Naomichi DEGAWA , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
发明人： Naomichi DEGAWA , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
IPC分类号： G11B5/39 , G11B5/60
CPC分类号： G11B5/3912 , G01R33/093 , G11B5/3909 , G11B2005/3996
摘要： A magnetic head that reads information of a magnetic recording medium is provided. The magnetic head according to one embodiment includes: an MR element, formed with multilayer films, of which an electrical resistance changes according to an external magnetic field; a first shield layer that is disposed on a lower side in an lamination direction of the MR element; a second shield layer that is disposed on an upper side in the lamination direction of the MR element, and that applies voltage to the MR element together with the first shield layer; and side shield layers that are disposed on both sides of the MR element in a truck width direction. The side shield layers include soft magnetic layers and hard magnetic layers magnetized in a predetermined direction.
摘要翻译：提供读取磁记录介质的信息的磁头。根据一个实施例的磁头包括：由多层膜形成的MR元件，其电阻根据外部磁场而改变; 第一屏蔽层，其设置在所述MR元件的层叠方向的下侧; 第二屏蔽层，其设置在所述MR元件的层叠方向的上侧，并且与所述第一屏蔽层一起向所述MR元件施加电压; 以及侧向屏蔽层，其设置在卡车宽度方向上的MR元件的两侧。侧面屏蔽层包括在预定方向上被磁化的软磁性层和硬磁性层。

3. 发明申请

US20120087046A1 THIN FILM MAGNETIC HEAD INCLUDING SOFT LAYER MAGNETICALLY CONNECTED WITH SHIELD 有权
标题翻译：薄膜磁头包括与屏蔽电磁连接的软层
公开(公告)号：US20120087046A1
公开(公告)日：2012-04-12
申请号：US12900879
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/127 , G11B21/24 , G11B5/48
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.
摘要翻译：薄膜磁头包括：电阻效应膜，其电阻根据外部磁场而变化; 一对屏蔽，以与MR膜的膜表面正交的方向夹持MR膜的方式设置在两侧; 各向异性提供层，其向所述一对屏蔽件的第一屏蔽提供交换各向异性，以便在所需方向上磁化所述第一屏蔽，并且相对于所述第一屏蔽设置在与所述MR膜相反的一侧上; 以及侧面屏蔽，其设置在MR膜的轨道宽度方向的两侧，并且包括与第一屏蔽件磁性连接的软磁性层。

4. 发明授权

US08149547B2 Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element 有权
标题翻译：磁阻效应元件和具有磁阻效应元件的薄膜磁头
公开(公告)号：US08149547B2
公开(公告)日：2012-04-03
申请号：US12047722
申请日：2008-03-13
申请人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
发明人： Naoki Ohta , Satoshi Miura , Tomohito Mizuno
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.
摘要翻译： MR元件包括被钉扎层，自由层和非磁性空间层或夹在被钉扎层和自由层之间的隧道势垒层。自由层的磁化方向基本上垂直于其膜表面，并且被钉扎层的磁化方向基本上平行于其膜表面。

5. 发明授权

US08077436B2 CPP-type magnetoresistance effect element having three magnetic layers 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US08077436B2
公开(公告)日：2011-12-13
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，设置在所述磁阻堆叠的与空气轴承表面相反的一侧上。

6. 发明申请

US20100266080A1 TRANSMISSION DEVICE, RECEIVING DEVICE AND COMMUNICATION SYSTEM 有权
标题翻译：传输设备，接收设备和通信系统
公开(公告)号：US20100266080A1
公开(公告)日：2010-10-21
申请号：US12808598
申请日：2009-10-27
申请人： Hironobu Akita , Seiichi Ozawa , Yohei Ishizone , Satoshi Miura
发明人： Hironobu Akita , Seiichi Ozawa , Yohei Ishizone , Satoshi Miura
IPC分类号： H04L7/04
CPC分类号： H04L7/10 , G09G5/008 , H03L7/095 , H04L7/033 , H04L7/046
摘要： Provided are a transmission device, a receiving device, and a communication system having a simple configuration and capable of reliably executing the confirmation of a changed bit rate. The communication system 1 sends, to the receiving device 3, a serial data signal Sdata that is set as a constant value across a period of a constant multiple of a cycle of the clock when a bit rate of a serial data signal Sdata in the transmission device 2 is changed. The receiving device 3 that received the serial data signal Sdata receives training data Tdata from the transmission device 2 when it is determined that the serial data signal Sdata is a constant value across a period of a constant multiple of a cycle of the clock, and proceeds to the processing of confirming the changed bit rate.
摘要翻译：提供具有简单配置并能够可靠地执行改变的比特率的确认的传输设备，接收设备和通信系统。通信系统1向发送装置3发送串行数据信号Sdata，该串行数据信号Sdata在传输中的串行数据信号Sdata的比特率时，在时钟的周期的恒定倍数的周期内被设定为恒定值设备2更改。接收到串行数据信号Sdata的接收装置3当确定串行数据信号Sdata在时钟的周期的恒定倍数的周期内是恒定值时，从发送装置2接收训练数据Tdata，并且进行以确认改变的比特率的处理。

7. 发明授权

US07733128B2 Transmitting apparatus 有权
标题翻译：传送装置
公开(公告)号：US07733128B2
公开(公告)日：2010-06-08
申请号：US11912800
申请日：2006-04-25
申请人： Satoshi Miura
发明人： Satoshi Miura
IPC分类号： H03K19/094 , H03K19/0175
CPC分类号： H04L25/0282 , H03K17/6872 , H04L25/0272
摘要： To provide a transmitting apparatus capable of suppressing the fluctuation of a common mode potential and performing high-speed, long-distance signal transmission. The transmitting apparatus has a main buffer circuit and a pre-emphasis buffer circuit 20. The pre-emphasis buffer circuit 20, which has a switch circuit 21, a first current source 22, and a second current source 23, uses the switch circuit 21 to output a current signal having the same direction as an output current of the main buffer circuit 10 during a certain time interval starting from a time point when the level of data to be transmitted changes, and brings the output terminals 201, 202 to a High-Z state during a time interval when the level is constant after a lapse of the abovementioned certain time interval. The output of the pre-emphasis buffer circuit 20 has no influence on the common mode potential of the output of the main buffer circuit but has influence only the amplitude of the current signal output to a differential transmission line. In this manner, the transmitting apparatus can suppress the fluctuation of the common mode potential and can perform high-speed, long-distance signal transmission.
摘要翻译：提供能够抑制共模电位波动并进行高速长距离信号传输的发送装置。发送装置具有主缓冲电路和预加重缓冲电路20.具有开关电路21，第一电流源22和第二电流源23的预加重缓冲电路20使用开关电路21 在从要发送的数据的电平改变的时间点开始的特定时间间隔期间输出具有与主缓冲电路10的输出电流相同方向的电流信号，并且使输出端子201,202变为高电平 -Z状态，在经过上述一定时间间隔后的电平恒定的时间间隔内。预加重缓冲器电路20的输出对主缓冲电路的输出的共模电位没有影响，但仅影响输出到差分传输线的电流信号的幅度。以这种方式，发送装置可以抑制共模电位的波动，并且可以执行高速，长距离的信号传输。

8. 发明授权

US07715156B2 Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element 有权
标题翻译：隧道磁阻效应元件和具有隧道磁阻效应的薄膜磁头读头元件
公开(公告)号：US07715156B2
公开(公告)日：2010-05-11
申请号：US11622603
申请日：2007-01-12
申请人： Kei Hirata , Satoshi Miura
发明人： Kei Hirata , Satoshi Miura
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/307 , H01L43/10 , Y10T428/1114
摘要： A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a tunnel barrier layer having a three-layered structure of a first crystalline layer, a crystalline semiconductor layer and a second crystalline insulation layer stacked in this order.
摘要翻译： TMR元件包括下电极层，层叠在下电极层上的TMR多层和层叠在TMR多层上的上电极层。 TMR多层包括具有第一结晶层，结晶半导体层和第二晶体绝缘层的三层结构的隧道势垒层，该层结构按此顺序堆叠。

9. 发明授权

US07660082B2 TMR element having a tunnel barrier which includes crystalline portions and non-crystalline portions 有权
标题翻译：具有隧道势垒的TMR元件包括结晶部分和非结晶部分
公开(公告)号：US07660082B2
公开(公告)日：2010-02-09
申请号：US11500379
申请日：2006-08-08
申请人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
发明人： Takumi Uesugi , Satoshi Miura , Takeo Kagami
IPC分类号： G11B5/39 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11C11/16 , H01F10/3254 , H01F41/307 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.
摘要翻译：磁阻元件具有下层，隧道势垒层和上层。下层，隧道势垒层和上层相邻配置并依次层叠。下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

10. 发明授权

US07652854B2 Magneto-resistive or tunneling magneto-resistive element having a shielding film of an amorphous layer above a crystalline layer, and method for manufacturing the same 有权
标题翻译：具有在结晶层上方的非晶层的屏蔽膜的磁阻或隧道式磁阻元件及其制造方法
公开(公告)号：US07652854B2
公开(公告)日：2010-01-26
申请号：US11500311
申请日：2006-08-08
申请人： Takeo Kagami , Naoki Ohta , Kazuki Sato , Satoshi Miura
发明人： Takeo Kagami , Naoki Ohta , Kazuki Sato , Satoshi Miura
IPC分类号： G11B5/33
CPC分类号： G11B5/3116 , G11B5/112 , G11B5/3912 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49044
摘要： A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.
摘要翻译：隧道磁阻元件包括：包括反铁磁层，钉扎层，阻挡层和自由层的隧道磁阻膜; 以及相对于层叠方向设置在隧道磁阻膜下方的下磁屏蔽膜。阻挡层由氧化镁构成。下磁屏蔽膜具有多层结构，其包括结晶层和相对于层叠方向设置在结晶层上方的非晶层。结晶层含有至少一种晶粒尺寸为500nm以上的晶粒。

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