专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100162016A1 LOW POWER CONSUMPTION PROCESSOR 有权
标题翻译：低功耗处理器
公开(公告)号：US20100162016A1
公开(公告)日：2010-06-24
申请号：US12427291
申请日：2009-04-21
申请人： Yil-Suk YANG , Tae-Moon ROH , Soon-Il YEO , Jung-Hee SUK , Chun-Gi LYUH , Ik-Jae CHUN , Se-Wan HEO , Jong-Dae KIM
发明人： Yil-Suk YANG , Tae-Moon ROH , Soon-Il YEO , Jung-Hee SUK , Chun-Gi LYUH , Ik-Jae CHUN , Se-Wan HEO , Jong-Dae KIM
IPC分类号： G06F1/32
CPC分类号： G06F1/3203 , G06F1/3287 , G06F1/3296 , Y02D10/171 , Y02D10/172 , Y02D50/20
摘要： Provided is a low power consumption processor. The processor includes: a plurality of blocks; a memory storing instructions that control each of the plurality of blocks; and a multi power controller generates a signal that activates at least one of the plurality of blocks according to an address storing the instruction, and provides a normal power voltage or a reduction power voltage in response to the activation signal.
摘要翻译：提供了一种低功耗处理器。处理器包括：多个块; 存储器，其存储控制所述多个块中的每一个的指令; 并且多功率控制器根据存储该指令的地址产生激活多个块中的至少一个块的信号，并响应于激活信号提供正常的电源电压或降低功率电压。

2. 发明申请

US20090282223A1 DATA PROCESSING CIRCUIT 有权
标题翻译：数据处理电路
公开(公告)号：US20090282223A1
公开(公告)日：2009-11-12
申请号：US12204857
申请日：2008-09-05
申请人： Chun-Gi LYUH , Jung-Hee SUK , Ik-Jae CHUN , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
发明人： Chun-Gi LYUH , Jung-Hee SUK , Ik-Jae CHUN , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
IPC分类号： G06F9/302
CPC分类号： G06F9/3001 , G06F9/30189 , G06F9/3802 , G06F9/3885
摘要： Provided is a data processing circuit. A control unit outputs an operation control signal and a memory control signal. A plurality of program memories each outputs a command in response to the memory control signal. A plurality of arithmetic sections each selectively performs any one of the commands from the plurality of program memories in response to the operation control signal. Operation modes of the data processing circuit can be flexibly changed according to operation environments.
摘要翻译：提供了一种数据处理电路。控制单元输出操作控制信号和存储器控制信号。多个程序存储器响应于存储器控制信号输出命令。多个算术部分响应于操作控制信号而选择性地执行来自多个程序存储器的命令中的任何一个。可以根据操作环境灵活地改变数据处理电路的工作模式。

3. 发明申请

US20100161849A1 MULTI CHANNEL DATA TRANSFER DEVICE 审中-公开
标题翻译：多通道数据传输设备
公开(公告)号：US20100161849A1
公开(公告)日：2010-06-24
申请号：US12484500
申请日：2009-06-15
申请人： Jung-Hee SUK , Ik-Jae CHUN , Yil-Suk YANG , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
发明人： Jung-Hee SUK , Ik-Jae CHUN , Yil-Suk YANG , Se-Wan HEO , Tae-Moon ROH , Jong-Dae KIM
IPC分类号： G06F13/28
CPC分类号： G06F13/122
摘要： Provided is a multi channel data transfer device. The multi channel data transfer device includes: a plurality of channel control unit connected to a plurality of peripheral devices, respectively; a plurality of control registers storing setting data for controlling an operation of each of the plurality of channel controllers; and a common register controller delivering common setting data to all or part of the plurality of control registers, the common setting data being applied in common to all or part of the plurality of channel controllers.
摘要翻译：提供了一种多通道数据传送装置。多通道数据传送装置包括：分别连接到多个外围设备的多个信道控制单元; 多个控制寄存器，其存储用于控制多个信道控制器中的每一个的操作的设置数据; 以及公共寄存器控制器，其向所述多个控制寄存器的全部或一部分提供公共设置数据，所述公共设置数据被共同应用于所述多个通道控制器的全部或部分。

4. 发明申请

US20100156680A1 METHOD OF DRIVING BIT STREAM PROCESSOR 有权
标题翻译：驱动位流处理器的方法
公开(公告)号：US20100156680A1
公开(公告)日：2010-06-24
申请号：US12481748
申请日：2009-06-10
申请人： Se-Wan HEO , Seong-Won LEE , Jung-Hee SUK , Tae-Moon ROH , Jong-Dae KIM
发明人： Se-Wan HEO , Seong-Won LEE , Jung-Hee SUK , Tae-Moon ROH , Jong-Dae KIM
IPC分类号： H03M7/00
CPC分类号： H03M7/40 , H03M7/42
摘要： Provided is a bit stream processor using a reduced table lookup. The bit stream processor includes a bit stream exclusive register in a general purpose register in order to process data of a variable length effectively. Additionally, the bit stream processor an instruction of a table lookup method to which a prefix method is applied and a bit stream exclusive instruction in order to reduce an entire memory size.
摘要翻译：提供了使用减少的表查找的位流处理器。位流处理器在通用寄存器中包括位流专用寄存器，以便有效地处理可变长度的数据。此外，比特流处理器是应用前缀方法的表查找方法的指令和位流独占指令，以便减少整个存储器大小。

5. 发明申请

US20100017544A1 DIRECT MEMORY ACCESS CONTROLLER AND DATA TRANSMITTING METHOD OF DIRECT MEMORY ACCESS CHANNEL 有权
标题翻译：直接存储器访问控制器和直接存储器访问通道的数据传输方法
公开(公告)号：US20100017544A1
公开(公告)日：2010-01-21
申请号：US12262412
申请日：2008-10-31
申请人： Ik-Jae CHUN , Jung-Hee SUK , Tae-Moon ROH , Jong-Dae KIM
发明人： Ik-Jae CHUN , Jung-Hee SUK , Tae-Moon ROH , Jong-Dae KIM
IPC分类号： G06F13/28
CPC分类号： G06F13/28
摘要： Provided is a direct memory access (DMA) controller. The DMA controller includes a plurality of channel groups and a channel group controller. Each of the channel groups has a plurality of DMA channels, and the channel group controller controls enablement of the DMA channels in units of channel groups. Herein, the channel group controller enables the DMA channels of at least one of the channel groups in data transmission.
摘要翻译：提供了直接存储器访问（DMA）控制器。 DMA控制器包括多个信道组和信道组控制器。每个通道组具有多个DMA通道，并且通道组控制器控制以通道组为单位的DMA通道的使能。这里，信道组控制器使数据传输中的至少一个信道组的DMA信道成为可能。

6. 发明申请

US20100126548A1 THERMOELECTRIC DEVICE, THERMOELECTIC DEVICE MODULE, AND METHOD OF FORMING THE THERMOELECTRIC DEVICE 审中-公开
标题翻译：热电装置，热电装置模块及形成热电装置的方法
公开(公告)号：US20100126548A1
公开(公告)日：2010-05-27
申请号：US12503936
申请日：2009-07-16
申请人： Moon-Gyu JANG , Myung-Sim JUN , Tae-Moon ROH , Jong-Dae KIM , Tae-Hyoung ZYUNG
发明人： Moon-Gyu JANG , Myung-Sim JUN , Tae-Moon ROH , Jong-Dae KIM , Tae-Hyoung ZYUNG
IPC分类号： H01L35/02 , H01L21/02
CPC分类号： H01L35/32 , H01L35/34
摘要： Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.
摘要翻译：提供了一种热电装置，热电装置模块和形成热电装置的方法。热电装置包括：第一导电型第一半导体纳米线，其包括至少一个第一阻挡区; 包括至少一个第二阻挡区域的第二导电类型的第二半导体纳米线; 连接到第一半导体纳米线的一端的第一电极; 连接到所述第二半导体纳米线的一端的第二电极; 以及连接到第一半导体纳米线的另一端和第二半导体纳米线的另一端的公共电极。第一阻挡区域的导热率大于第一半导体纳米线，第二阻挡区域的导热率大于第二半导体纳米线。

7. 发明申请

US20100155703A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100155703A1
公开(公告)日：2010-06-24
申请号：US12498402
申请日：2009-07-07
申请人： Myung-Sim JUN , Moon-Gyu JANG , Tae-Gon NOH , Tae-Moon ROH
发明人： Myung-Sim JUN , Moon-Gyu JANG , Tae-Gon NOH , Tae-Moon ROH
IPC分类号： H01L29/15 , H01L21/336
CPC分类号： H01L29/122 , B82Y10/00 , H01L31/113 , Y10S977/937 , Y10S977/953
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: a single electron box including a first quantum dot, a charge storage gate on the first quantum dot, and a first gate electrode on the charge storage gate, the charge storage gate exchanging charges with the first quantum dot, the first gate electrode adjusting electric potential of the first quantum dot; and a single electron transistor including a second quantum dot below the first quantum dot, a source, a drain, and a second gate electrode below the second quantum dot, the second quantum dot being capacitively coupled to the first quantum dot, the source contacting one side of the second quantum dot, the drain contacting the other side facing the one side, the second gate electrode adjusting electric potential of the second quantum dot.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括：包括第一量子点的单个电子盒，第一量子点上的电荷存储栅极和电荷存储栅极上的第一栅电极，电荷存储栅极与第一量子点交换电荷，第一量子点栅电极调整第一量子点的电位; 以及包括第一量子点下方的第二量子点的单电子晶体管，位于第二量子点下方的源极，漏极和第二栅电极，第二量子点电容耦合到第一量子点，源极与第一量子点接触所述第二量子点的所述漏极与所述一侧面对的另一侧接触，所述第二栅电极调整所述第二量子点的电位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式