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1. 发明授权

US07973405B2 Integrated circuit for driving semiconductor device and power converter 有权
标题翻译：用于驱动半导体器件和功率转换器的集成电路
公开(公告)号：US07973405B2
公开(公告)日：2011-07-05
申请号：US12784331
申请日：2010-05-20
申请人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H01L23/34
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。因此，制造驱动器IC2。

2. 发明授权

US07763974B2 Integrated circuit for driving semiconductor device and power converter 有权
标题翻译：集成电路驱动半导体器件和功率转换器
公开(公告)号：US07763974B2
公开(公告)日：2010-07-27
申请号：US10545021
申请日：2004-02-13
申请人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa Takahashi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H01L23/34
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。因此，制造驱动器IC2。

3. 发明申请

US20100225363A1 Integrated Circuit for Driving Semiconductor Device and Power Converter 有权
标题翻译：用于驱动半导体器件和电源转换器的集成电路
公开(公告)号：US20100225363A1
公开(公告)日：2010-09-09
申请号：US12784331
申请日：2010-05-20
申请人： Yoshimasa TAKAHASHI , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa TAKAHASHI , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H03K3/00
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。因此，制造驱动器IC2。

4. 发明申请

US20070008679A1 Integrated circuit for driving semiconductor device and power converter 有权
标题翻译：用于驱动半导体器件和功率转换器的集成电路
公开(公告)号：US20070008679A1
公开(公告)日：2007-01-11
申请号：US10545021
申请日：2004-02-13
申请人： Yoshimasa Takahasi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa Takahasi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H02B1/00
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个高耐压IC芯片200。构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213 n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223 p和垂直n沟道MOS-FET芯片223 n中。因此，制造驱动器IC2。

5. 发明授权

US06275399B1 Method and apparatus for driving a semiconductor element with variable resistance circuitry 失效
标题翻译：用可变电阻电路驱动半导体元件的方法和装置
公开(公告)号：US06275399B1
公开(公告)日：2001-08-14
申请号：US09654892
申请日：2000-09-05
申请人： Hideki Miyazaki , Katsunori Suzuki , Koji Tateno , Junichi Sakano , Masahiro Iwamura , Mutsuhiro Mori
发明人： Hideki Miyazaki , Katsunori Suzuki , Koji Tateno , Junichi Sakano , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H02M768
CPC分类号： H03K17/0822 , H03K17/165
摘要： In a driving apparatus of a power semiconductor element for conducting or interrupting a main current, first resistance variable for changing a first resistance according to a control voltage, and second resistance variable for changing a second resistance according to a voltage between a first and a second terminal are provided, and either one of a voltage of a control power supply or a voltage between the first and the second terminal is voltage-divided by the first resistance and the second resistance, and the divided voltage is applied to a control gate terminal at the time of conducting or interrupting the main current.
摘要翻译：在用于导通或中断主电流的功率半导体元件的驱动装置中，根据控制电压改变第一电阻的第一电阻变量，以及根据第一和第二电压之间的电压来改变第二电阻的第二电阻变量端子，并且控制电源的电压或第一和第二端子之间的电压中的任一个被第一电阻和第二电阻分压，并且分压被施加到控制栅极端子执行或中断主电流的时间。

6. 发明授权

US06373731B1 Surge voltage suppressed power inverter using a voltage driven switching element 有权
标题翻译：使用电压驱动开关元件的浪涌电压抑制功率逆变器
公开(公告)号：US06373731B1
公开(公告)日：2002-04-16
申请号：US09654084
申请日：2000-09-01
申请人： Masahiro Iwamura , Hideki Miyazaki , Katsunori Suzuki , Junichi Sakano , Mutsuhiro Mori , Koji Tateno
发明人： Masahiro Iwamura , Hideki Miyazaki , Katsunori Suzuki , Junichi Sakano , Mutsuhiro Mori , Koji Tateno
IPC分类号： H02H7122
CPC分类号： H02M1/34 , H02M1/44 , H02M7/5387 , H02M2001/344
摘要： A power inverter using a voltage driven switching element, capable of suppressing an excessive surge voltage which is generated on high-speed switching of IGBTs or MOSFETs, and suppressing radio frequency oscillation after the suppression of the surge voltage. The power inverter includes a switching element rendering a power path conducting and non-conducting, and a speeding-up circuit of a feedback path in an active clamping circuit added to the switching element.
摘要翻译：一种使用电压驱动开关元件的电力逆变器，其能够抑制在IGBT或MOSFET的高速开关时产生的过大的浪涌电压，并且在抑制浪涌电压之后抑制射频振荡。功率逆变器包括形成导通和不导通的功率路径的开关元件，以及添加到开关元件的有源钳位电路中的反馈路径的加速电路。

7. 发明授权

US07208918B2 Vehicle rotating electric machine 有权
标题翻译：车辆旋转电机
公开(公告)号：US07208918B2
公开(公告)日：2007-04-24
申请号：US11102627
申请日：2005-04-11
申请人： Shinji Shirakawa , Mutsuhiro Mori , Masamitsu Inaba , Tatsumi Yamauchi , Masahiro Iwamura , Keiichi Mashino , Masanori Tsuchiya
发明人： Shinji Shirakawa , Mutsuhiro Mori , Masamitsu Inaba , Tatsumi Yamauchi , Masahiro Iwamura , Keiichi Mashino , Masanori Tsuchiya
IPC分类号： H02P9/00 , H02M5/42
CPC分类号： F02N11/04 , B60K6/26 , B60K6/48 , B60W10/08 , F02D2041/2075 , F02N11/0814 , F02N11/0859 , F02N2011/0896 , H01L24/36 , H01L24/40 , H01L24/41 , H01L2224/32225 , H01L2224/40225 , H01L2224/4103 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H02J7/1492 , H02M7/003 , Y02T10/6221 , Y02T10/7005 , H01L2924/00 , H01L2224/37099
摘要： An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.
摘要翻译：逆变器装置安装在旋转电机体上。逆变器装置包括具有转换器电路的模块单元和控制转换器电路的操作的控制单元。转换器电路通过并联连接多个以下串联电路而构成，每个串联电路包括设置在较高电位侧的P沟道MOS半导体器件和设置在较低电位侧的N沟道MOS半导体器件它们串联电连接。从供给电池的电池或电力供给的电力被控制。

8. 发明申请

US20050237033A1 Vehicle rotating electric machine 有权
标题翻译：车辆旋转电机
公开(公告)号：US20050237033A1
公开(公告)日：2005-10-27
申请号：US11102627
申请日：2005-04-11
申请人： Shinji Shirakawa , Mutsuhiro Mori , Masamitsu Inaba , Tatsumi Yamauchi , Masahiro Iwamura , Keiichi Mashino , Masanori Tsuchiya
发明人： Shinji Shirakawa , Mutsuhiro Mori , Masamitsu Inaba , Tatsumi Yamauchi , Masahiro Iwamura , Keiichi Mashino , Masanori Tsuchiya
IPC分类号： B60L9/18 , H02J7/14 , H02K11/00 , H02M7/5387 , H02H7/06 , H02P9/00 , H02P11/00
CPC分类号： F02N11/04 , B60K6/26 , B60K6/48 , B60W10/08 , F02D2041/2075 , F02N11/0814 , F02N11/0859 , F02N2011/0896 , H01L24/36 , H01L24/40 , H01L24/41 , H01L2224/32225 , H01L2224/40225 , H01L2224/4103 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H02J7/1492 , H02M7/003 , Y02T10/6221 , Y02T10/7005 , H01L2924/00 , H01L2224/37099
摘要： An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.
摘要翻译：逆变器装置安装在旋转电机体上。逆变器装置包括具有转换器电路的模块单元和控制转换器电路的操作的控制单元。转换器电路通过并联连接多个以下串联电路而构成，每个串联电路包括设置在较高电位侧的P沟道MOS半导体器件和设置在较低电位侧的N沟道MOS半导体器件它们串联电连接。从供给电池的电池或电力供给的电力被控制。

9. 发明授权

US06392908B1 Method and apparatus for driving a semiconductor element 有权
公开(公告)号：US06392908B1
公开(公告)日：2002-05-21
申请号：US09884930
申请日：2001-06-21
申请人： Hideki Miyazaki , Katsunori Suzuki , Koji Tateno , Junichi Sakano , Masahiro Iwamura , Mutsuhiro Mori
发明人： Hideki Miyazaki , Katsunori Suzuki , Koji Tateno , Junichi Sakano , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H02M7521
摘要： In a driving apparatus of a power semiconductor element for conducting or interrupting a main current, first resistance variable for changing a first resistance according to a control voltage, and second resistance variable for changing a second resistance according to a voltage between a first and a second terminal are provided, and either one of a voltage of a control power supply or a voltage between the first and the second terminal is voltage-divided by the first resistance and the second resistance, and the divided voltage is applied to a control gate terminal at the time of conducting or interrupting the main current.

10. 发明授权

US09506997B2 Magnetic-field-angle measurement apparatus and rotational-angle measurement apparatus using same 有权
标题翻译：磁场角测量装置和使用其的旋转角度测量装置
公开(公告)号：US09506997B2
公开(公告)日：2016-11-29
申请号：US13697690
申请日：2010-05-14
申请人： Mutsumi Suzuki , Hiroshi Iwasawa , Masahiro Iwamura
发明人： Mutsumi Suzuki , Hiroshi Iwasawa , Masahiro Iwamura
IPC分类号： G01R33/09 , G11C7/06 , H01L43/08
摘要： In a magnetic-field angle detection device and a rotation angle detection device in which the accuracy of the measured angle is not degraded even if the MR ratio of the tunneling magnetoresistance element is increased. In a magnetic-field-angle measurement apparatus including a magnetic-field-angle detection circuit and a magnetic sensor having a tunneling magnetoresistance element with a pinned magnetic layer, the magnetic-field-angle detection circuit has a power-supply unit that outputs a constant voltage as a bias voltage to the tunneling magnetoresistance element of the magnetic sensor and a current-detection unit that detects an output current of the tunneling magnetoresistance element. The accuracy of the measured angle of the magnetic-field angle detection device and the rotation angle detection device is improved by measuring the tunneling magnetoresistance element current while maintaining the terminal voltage of the tunneling magnetoresistance element constant with input impedance of the current-detection unit as zero.
摘要翻译：在磁场角检测装置和旋转角度检测装置中，即使隧道磁阻元件的MR比增加，测量角度的精度也不会降低。在包括磁场角检测电路的磁场角测量装置和具有钉扎磁性层的隧道磁阻元件的磁传感器中，磁场角检测电路具有电源单元，其输出恒定电压作为磁传感器的隧道磁阻元件的偏置电压，以及电流检测单元，其检测隧道磁阻元件的输出电流。通过测量隧道磁阻元件电流来改善磁场角检测装置和旋转角度检测装置的测量角度的精度，同时保持隧道磁阻元件的端电压恒定，电流检测单元的输入阻抗为零。

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