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1. 发明授权

US08299836B2 Level shift circuit and power conversion unit 有权
标题翻译：电平移位电路和电源转换单元
公开(公告)号：US08299836B2
公开(公告)日：2012-10-30
申请号：US13029341
申请日：2011-02-17
申请人： Naoki Sakurai , Junichi Sakano , Seigoh Yukutake
发明人： Naoki Sakurai , Junichi Sakano , Seigoh Yukutake
IPC分类号： H03L5/00
CPC分类号： H03K19/0175
摘要： In a level shift circuit, when a power-source voltage variation dV/dt of a high voltage side occurs and influences on a logic level of a circuit, the passing through of a malfunction signal is masked and prevented in the first and second logic circuits, by a signal from a time-constant generation circuit or a portion where a power voltage variation occurs in advance, by utilizing the fact that this variation occurs both at a set side and a reset side. When the power source voltage variation dV/dt is generated at a high voltage side, sufficient allowance in the timing of this masking prevents an erroneous signal from being transmitted to a flip-flop, and a control signal is transmitted from a low voltage side circuit not giving malfunction to a high voltage side circuit, even when there is a production variation in each element in semiconductor processes.
摘要翻译：在电平移位电路中，当高电压侧的电源电压变化dV / dt发生并影响电路的逻辑电平时，在第一和第二逻辑电路中屏蔽并防止故障信号的通过通过利用在设定侧和复位侧出现这种变化的事实，通过来自时间常数生成电路的信号或者预先发生电力电压变化的部分。当在高电压侧产生电源电压变化dV / dt时，在该掩蔽的定时中的充分允许阻止了错误的信号被发送到触发器，并且控制信号从低电压侧电路即使在半导体工艺中的每个元件存在生产变化时，也不会对高压侧电路产生故障。

2. 发明申请

US20110227626A1 LEVEL SHIFT CIRCUIT AND POWER CONVERSION UNIT 有权
标题翻译：电平转换电路和电源转换单元
公开(公告)号：US20110227626A1
公开(公告)日：2011-09-22
申请号：US13029341
申请日：2011-02-17
申请人： Naoki SAKURAI , Junichi Sakano , Seigoh Yukutake
发明人： Naoki SAKURAI , Junichi Sakano , Seigoh Yukutake
IPC分类号： H03L5/00
CPC分类号： H03K19/0175
摘要： In a level shift circuit, when a power-source voltage variation dV/dt of a high voltage side occurs and influences on a logic level of a circuit, the passing through of a malfunction signal is masked and prevented in the first and second logic circuits, by a signal from a time-constant generation circuit or a portion where a power voltage variation occurs in advance, by utilizing the fact that this variation occurs both at a set side and a reset side. When the power source voltage variation dV/dt is generated at a high voltage side, sufficient allowance in the timing of this masking prevents an erroneous signal from being transmitted to a flip-flop, and a control signal is transmitted from a low voltage side circuit not giving malfunction to a high voltage side circuit, even when there is a production variation in each element in semiconductor processes.
摘要翻译：在电平移位电路中，当高电压侧的电源电压变化dV / dt发生并影响电路的逻辑电平时，在第一和第二逻辑电路中屏蔽并防止故障信号的通过通过利用在设定侧和复位侧出现这种变化的事实，通过来自时间常数生成电路的信号或者预先发生电力电压变化的部分。当在高电压侧产生电源电压变化dV / dt时，在该掩蔽的定时中的充分允许阻止了错误的信号被发送到触发器，并且控制信号从低电压侧电路即使在半导体工艺中的每个元件存在生产变化时，也不会对高压侧电路产生故障。

3. 发明申请

US20100225363A1 Integrated Circuit for Driving Semiconductor Device and Power Converter 有权
标题翻译：用于驱动半导体器件和电源转换器的集成电路
公开(公告)号：US20100225363A1
公开(公告)日：2010-09-09
申请号：US12784331
申请日：2010-05-20
申请人： Yoshimasa TAKAHASHI , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa TAKAHASHI , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H03K3/00
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。因此，制造驱动器IC2。

4. 发明申请

US20090230938A1 Electric Power Conversion Apparatus 审中-公开
标题翻译：电力转换装置
公开(公告)号：US20090230938A1
公开(公告)日：2009-09-17
申请号：US12336096
申请日：2008-12-16
申请人： Naoki Sakurai
发明人： Naoki Sakurai
IPC分类号： G05F1/66
CPC分类号： H02M7/538 , H01L2224/48091 , H01L2224/48227 , H01L2224/49113 , H01L2924/13055 , H01L2924/13091 , H03K17/567 , H03K17/691 , H03K19/017545 , H01L2924/00014 , H01L2924/00
摘要： In an electric power conversion apparatus, there is reduced deterioration in insulation of a means which is provided inside an IC chip and transmits a signal from a low electric potential system to a high electric potential system. The electric power conversion apparatus includes a lower-arm circuit 14 which transmits control signals from a micro computer 10 through the pulse transformers 22 and 23 provided inside an IC chip and outputs the control signal transmitted through the pulse transformer 23 to a lower-arm IGBT 1, a high-voltage nMOS 30 which converts the electric potential of the control signal for an upper-arm IGBT 3 transmitted through the pulse transformer 22 of the lower-arm circuit 14 and an upper-arm circuit 15 which outputs the control signal of which the electric potential is converted by the high-voltage nMOS 30 to the upper-arm IGBT 3.
摘要翻译：在电力转换装置中，设置在IC芯片内部的装置的绝缘劣化降低，并将信号从低电位系统发送到高电位系统。电力转换装置包括下臂电路14，其通过设置在IC芯片内的脉冲变压器22和23从微计算机10发送控制信号，并将通过脉冲变压器23发送的控制信号输出到下臂IGBT 如图1所示，转换通过下臂电路14的脉冲变压器22传输的上臂IGBT3的控制信号的电位的高电压nMOS 30和输出下臂电路14的控制信号的上臂电路15 其电位由高电压nMOS 30转换到上臂IGBT 3。

5. 发明申请

US20070008679A1 Integrated circuit for driving semiconductor device and power converter 有权
标题翻译：用于驱动半导体器件和功率转换器的集成电路
公开(公告)号：US20070008679A1
公开(公告)日：2007-01-11
申请号：US10545021
申请日：2004-02-13
申请人： Yoshimasa Takahasi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
发明人： Yoshimasa Takahasi , Naoki Sakurai , Masashi Yura , Masahiro Iwamura , Mutsuhiro Mori
IPC分类号： H02B1/00
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H02M1/08 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要翻译：以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的可靠性。还提供了一种包括这种集成电路的功率转换器。构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个高耐压IC芯片200。构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213 n中。构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223 p和垂直n沟道MOS-FET芯片223 n中。因此，制造驱动器IC2。

6. 发明授权

US5274541A Parallel circuit module including a diode and an IGBT 失效
标题翻译：并联电路模块包括二极管和IGBT
公开(公告)号：US5274541A
公开(公告)日：1993-12-28
申请号：US631289
申请日：1990-12-20
申请人： Shin Kimura , Yasuo Matsuda , Norikazu Tokunaga , Mutsuhiro Mori , Toshiki Kurosu , Yutaka Suzuki , Naoki Sakurai , Yasumichi Yasuda , Tomoyuki Tanaka , Kenichi Onda
发明人： Shin Kimura , Yasuo Matsuda , Norikazu Tokunaga , Mutsuhiro Mori , Toshiki Kurosu , Yutaka Suzuki , Naoki Sakurai , Yasumichi Yasuda , Tomoyuki Tanaka , Kenichi Onda
IPC分类号： H01L25/07 , H01L25/18 , H02M7/00 , H02M7/48 , H02M7/5387 , H02P25/04 , H02P27/06 , H03K17/0814 , H03K17/567 , H02H7/122 , H03K17/687
CPC分类号： H02M7/487 , H01L25/072 , H02M7/003 , H03K17/08148 , H03K17/567 , H01L2224/48091 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107
摘要： In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.
摘要翻译：在使用诸如用于高速逆变器的IGBT的高速开关元件的模块中，以反并联方式在IGBT的开关特性和与其连接的二极管的恢复特性之间建立匹配条件。结果，抑制逆变器电路中出现的振荡电压，以防止逆变器系统的错误操作。

7. 发明授权

US5166760A Semiconductor Schottky barrier device with pn junctions 失效
标题翻译：具有pn结的半导体肖特基势垒器件
公开(公告)号：US5166760A
公开(公告)日：1992-11-24
申请号：US833706
申请日：1992-02-11
申请人： Mutsuhiro Mori , Yasumiti Yasuda , Naoki Sakurai , Hidetoshi Arakawa , Hiroshi Owada
发明人： Mutsuhiro Mori , Yasumiti Yasuda , Naoki Sakurai , Hidetoshi Arakawa , Hiroshi Owada
IPC分类号： H01L25/07 , H01L29/872 , H02M7/00 , H02M7/48 , H02M7/487 , H03K17/0814
CPC分类号： H02M7/487 , H01L24/05 , H01L24/48 , H01L25/072 , H01L29/872 , H02M7/003 , H03K17/08148 , H01L2224/04042 , H01L2224/05558 , H01L2224/05624 , H01L2224/4847 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12036 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , Y10S257/927 , Y10S257/928
摘要： A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (.apprxeq.1.38.times.10.sup.-23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (.apprxeq.1.6.times.10.sup.-19 C). The first diode can have a first semiconductor region of one conductivity type and a second semiconductor region of the other conductivity type adjacent to the first semiconductor region to form a pn junction therebetween, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region. The second diode can be formed by the first semiconductor region of the one conductivity type and a third semiconductor region of the other conductivity type analogously as above.
摘要翻译：提供一种半导体器件，其中在垂直于电流通过方向的方向上并排设置具有pn结的第一二极管和具有通过电流通过方向的肖特基势垒和pn结的组合的第二二极管。当具有电流密度JF的正向电流通入第二二极管时，在0.1（V）至0.3（V）的正向电压VF范围内建立关系，其中k表示玻尔兹曼常数（约1.38×10 -23J / K），T表示绝对温度，q表示电子电荷的量（APPROX 1.6×10-19℃）。第一二极管可以具有一个导电类型的第一半导体区域和与第一半导体区域相邻的另一导电类型的第二半导体区域，以在它们之间形成pn结，从而与一个主电极欧姆接触，因此具有比第一半导体区域高的杂质浓度。第二二极管可以由一种导电类型的第一半导体区域和另一导电类型的第三半导体区域类似地如上所述形成。

8. 发明授权

US5126806A Lateral insulated gate bipolar transistor 失效
标题翻译：横向绝缘门双极晶体管
公开(公告)号：US5126806A
公开(公告)日：1992-06-30
申请号：US442608
申请日：1989-11-29
申请人： Naoki Sakurai , Mutsuhiro Mori , Tomoyuki Tanaka
发明人： Naoki Sakurai , Mutsuhiro Mori , Tomoyuki Tanaka
IPC分类号： H01L29/68 , H01L29/739 , H01L29/74 , H01L29/749 , H01L29/78
CPC分类号： H01L29/7398 , H01L29/7393 , H01L29/7394
摘要： A lateral insulated gate bipolar transistor comprises a p layer and a p.sup.+ layer provided apart from each other and extending from a surface of an n.sup.- layer into the n.sup.- layer, an n.sup.+ layer provided extending from a surface of the p layer into the p layer, a first main electrode provided in ohmic contact with the n.sup.+ layer and the p layer, a second main electrode provided in ohmic contact with the p.sup.+ layer, and a control electrode provided through an insulating film on the n.sup.+ layer, the p layer and the n.sup.- layer on the side of the first main electrode away from the second main electrode.

9. 发明授权

US08252794B2 Composition for regenerative treatment of cartilage disease 失效
标题翻译：软骨再生治疗组合物
公开(公告)号：US08252794B2
公开(公告)日：2012-08-28
申请号：US11707008
申请日：2007-02-16
申请人： Masaharu Takigawa , Naoki Sakurai , Toshiki Takagi , Noriyuki Yanaka , Yuji Horikiri , Takashi Tamura
发明人： Masaharu Takigawa , Naoki Sakurai , Toshiki Takagi , Noriyuki Yanaka , Yuji Horikiri , Takashi Tamura
IPC分类号： A61K31/495 , A61K31/435 , A61K31/38
CPC分类号： A61K31/27 , A61K9/1647 , A61K31/277 , A61K31/343 , A61K31/381 , A61K31/40 , A61K31/4166 , A61K31/42 , A61K31/423 , A61K31/44 , A61K31/4409 , A61K31/4418 , A61K31/4425 , A61K31/4453 , A61K31/4709 , A61K31/4985 , A61K31/50 , A61K31/501 , A61K31/502 , A61K31/5025 , A61K31/519 , A61K31/522 , A61K31/5377 , A61K31/551
摘要： A composition for regenerative treatment of cartilage disease, which comprises a PDE4 inhibitor as an active ingredient, specifically a composition comprising a PDE4 inhibitor and a biocompatible and biodegradable polymer is provided, which composition, when formulated into a form suited to administer locally to affected cartilage region, such as microsphere preparation, can provide a pharmaceutical composition showing an excellent effect in regenerative treatment of cartilage.
摘要翻译：提供了一种用于软骨疾病的再生治疗的组合物，其包含PDE4抑制剂作为活性成分，特别是包含PDE4抑制剂和生物相容性和生物可降解聚合物的组合物，该组合物当配制成适于局部施用于受影响软骨的形式时可以提供在软骨的再生处理中显示出极好的效果的药物组合物，例如微球制剂。

10. 发明授权

US07851866B2 Electric power conversion device 有权
标题翻译：电力转换装置
公开(公告)号：US07851866B2
公开(公告)日：2010-12-14
申请号：US11338668
申请日：2006-01-25
申请人： Naoki Sakurai , Mutsuhiro Mori
发明人： Naoki Sakurai , Mutsuhiro Mori
IPC分类号： H01L23/58
CPC分类号： H03K17/0828 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.
摘要翻译：本发明的目的是提供一种电力转换器，其包括用于精确地检测IGBT的主电流的装置。根据本发明的电力转换装置包括：主电流估计装置，用于通过使用以下方式估计主电流的温度测量装置的输出：其二极管设置在与包括流过其中的主电流的IGBT的IGBT相同的半导体衬底中以及感测发射器，其通过与主电流成比例的感测电流流动; 感应电流; 以及预先存储在存储装置中的信息，关于半导体衬底温度，主电流和感应浓度范围之间的关系。

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