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    • 4. 发明申请
    • Methods for Preparation of High-Purity Polysilicon Rods Using a Metallic Core Means
    • 使用金属核心手段制备高纯度多晶硅棒的方法
    • US20100221454A1
    • 2010-09-02
    • US12160837
    • 2007-05-21
    • Hee Young KimKyung Koo YoonYoung Ki ParkWon Choon ChoiSang Jin Moon
    • Hee Young KimKyung Koo YoonYoung Ki ParkWon Choon ChoiSang Jin Moon
    • C23C16/24C23C16/46
    • C23C16/4581C01B33/035C23C16/24Y10T428/2913
    • The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means (C) is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means (E), heating the core means (C) by supplying electricity through the electrode means (E), and supplying a reaction gas (Gf) into the inner space (Ri) for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means (C). According to the present invention, the deposition output (D) and the core means (C) can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element (Ca) can be minimized, thereby a high-purity silicon can be prepared in a more economic and convenient way.
    • 本发明涉及一种使用金属芯装置制备多晶硅棒的方法,包括:在用于制备硅棒的沉积反应器的内部空间中安装芯装置,其中芯装置(C)由成形 金属芯体表面上的一个或多个分离层,并连接到电极装置(E),通过电极装置(E)供电来加热芯装置(C),并且将 反应气体(Gf)进入用于硅沉积的内部空间(Ri)中,从而在芯装置(C)的表面上沿向外的方向形成沉积输出。 根据本发明,沉积输出(D)和芯装置(C)可以容易地从通过硅沉积过程获得的硅棒输出分离,并且由金属芯的杂质引起的沉积输出的污染 元素(Ca)可以最小化,从而可以以更经济和方便的方式制备高纯度硅。