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1. 发明授权

US08682059B2 Harmonic resist model for use in a lithographic apparatus and a device manufacturing method 有权
标题翻译：用于光刻设备的谐波抗蚀剂模型和器件制造方法
公开(公告)号：US08682059B2
公开(公告)日：2014-03-25
申请号：US13896805
申请日：2013-05-17
申请人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
发明人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
IPC分类号： G06K9/62
CPC分类号： G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
摘要： A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
摘要翻译：一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。

2. 发明授权

US08447095B2 Harmonic resist model for use in a lithographic apparatus and a device manufacturing method 有权
公开(公告)号：US08447095B2
公开(公告)日：2013-05-21
申请号：US12625079
申请日：2009-11-24
申请人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
发明人： Yu Cao , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
IPC分类号： G06K9/62
CPC分类号： G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
摘要： A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

3. 发明申请

US20130251237A1 HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD 有权
标题翻译：用于地平线设备和装置制造方法的谐波电阻模型
公开(公告)号：US20130251237A1
公开(公告)日：2013-09-26
申请号：US13896805
申请日：2013-05-17
申请人： Yu CAO , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
发明人： Yu CAO , Luoqi Chen , Antoine Jean Bruguier , Wenjin Shao
IPC分类号： G06T7/00
CPC分类号： G06T3/0056 , G03F7/705 , G03F7/70666 , G03F7/70675 , G06T7/0004
摘要： A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.
摘要翻译：一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。

4. 发明授权

US08589829B2 Three-dimensional mask model for photolithography simulation 有权
公开(公告)号：US08589829B2
公开(公告)日：2013-11-19
申请号：US13736929
申请日：2013-01-08
申请人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
发明人： Peng Liu , Yu Cao , Luoqi Chen , Jun Ye
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/705 , G06F17/5009
摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

5. 发明授权

US07117478B2 System and method for lithography simulation 有权
公开(公告)号：US07117478B2
公开(公告)日：2006-10-03
申请号：US11037988
申请日：2005-01-18
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00 , G06F19/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

6. 发明申请

US20050122500A1 System and method for lithography simulation 有权
公开(公告)号：US20050122500A1
公开(公告)日：2005-06-09
申请号：US11037988
申请日：2005-01-18
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G03B27/54 , G03F20060101 , G03F7/20 , G06F17/50 , G06K9/00 , G06T7/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

7. 发明申请

US20050097500A1 System and method for lithography simulation 有权
公开(公告)号：US20050097500A1
公开(公告)日：2005-05-05
申请号：US10981914
申请日：2004-11-04
申请人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
发明人： Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
IPC分类号： G03B27/54 , G03F20060101 , G03F7/20 , G06F17/50 , G06K9/00 , G06T7/00
CPC分类号： G06F17/5009 , G03F1/00 , G03F7/004 , G03F7/705 , G03F7/70666 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06T7/0004 , G06T2207/30148 , G21K5/00
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

8. 发明申请

US20130066716A1 SENTIMENT-TARGETING FOR ONLINE ADVERTISEMENT 审中-公开
标题翻译：感谢在线广告的宣传
公开(公告)号：US20130066716A1
公开(公告)日：2013-03-14
申请号：US13230720
申请日：2011-09-12
申请人： Luoqi Chen , Jun Ye , Ya Luo , Yu Cao , Wei Zhuang , Hanying Feng
发明人： Luoqi Chen , Jun Ye , Ya Luo , Yu Cao , Wei Zhuang , Hanying Feng
IPC分类号： G06Q30/00
CPC分类号： G06Q30/00
摘要： The various embodiments described in the present disclosure, in at least one aspect, relate to computer-implemented methods of online advertisement. In one embodiment, a method includes, in response to receiving a request for an ad to be provided to a user in an online session, identifying a plurality of ads as candidates for consideration, determining one or more sentiments of a content of the online session, and ranking the plurality of identified ads based at least in part on (i) a correlation between the content of the online session and a content of each identified ad, and (ii) a correlation between the one or more sentiments of the content of the online session and the content of each identified ad.
摘要翻译：在至少一个方面，在本公开中描述的各种实施例涉及计算机实现的在线广告的方法。在一个实施例中，一种方法包括响应于在在线会话中接收到要提供给用户的广告的请求，将多个广告标识为候选作为考虑，确定在线会话的内容的一个或多个情绪并且至少部分地基于（i）在线会话的内容与每个所识别的广告的内容之间的相关性，以及（ii）所述内容的一个或多个情绪之间的相关性来对多个所识别的广告进行排名在线会话和每个已识别广告的内容。

9. 发明授权

US07747978B2 System and method for creating a focus-exposure model of a lithography process 有权
标题翻译：用于创建光刻工艺的焦点曝光模型的系统和方法
公开(公告)号：US07747978B2
公开(公告)日：2010-06-29
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

10. 发明申请

US20070031745A1 SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS 有权
标题翻译：用于创建光刻过程的聚焦曝光模型的系统和方法
公开(公告)号：US20070031745A1
公开(公告)日：2007-02-08
申请号：US11461994
申请日：2006-08-02
申请人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
发明人： Jun Ye , Yu Cao , Luoqi Chen , Hua-Yu Liu
IPC分类号： G03C5/00 , G03B27/42
CPC分类号： G03F7/70641 , G03F7/705 , G03F7/70516 , G03F7/70625
摘要： A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.
摘要翻译：公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需重新校准在不同的设置。与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。

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