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1. 发明申请

US20130083569A1 MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：复合半导体器件的制造方法
公开(公告)号：US20130083569A1
公开(公告)日：2013-04-04
申请号：US13557332
申请日：2012-07-25
申请人： Yuichi Minoura , Naoya Okamoto , Toshihide Kikkawa , Kozo Makiyama , Toshihiro Ohki
发明人： Yuichi Minoura , Naoya Okamoto , Toshihide Kikkawa , Kozo Makiyama , Toshihiro Ohki
IPC分类号： H01L21/283 , H02M5/458 , H01L23/48 , H01L21/28 , H01L29/78
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/66212 , H01L29/7787 , H01L29/872 , H02M1/4225 , H02M3/33569 , H02M2001/007 , Y02B70/126
摘要： A passivation film is formed on a compound semiconductor layered structure, an electrode formation scheduled position for the passivation film is thinned by dry etching, a thinned portion of the passivation film is penetrated by wet etching to form an opening, and a gate electrode is formed on the passivation film so as to embed this opening by an electrode material.
摘要翻译：在化合物半导体层状结构上形成钝化膜，通过干蚀刻使钝化膜的电极形成预定位置变薄，通过湿蚀刻渗透钝化膜的薄化部分以形成开口，形成栅电极在钝化膜上，以便通过电极材料嵌入该开口。

2. 发明授权

US09496380B2 Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same 有权
标题翻译：包含具有缓冲层的化合物半导体层状结构的化合物半导体器件及其制造方法
公开(公告)号：US09496380B2
公开(公告)日：2016-11-15
申请号：US13328244
申请日：2011-12-16
申请人： Yuichi Minoura , Toshihide Kikkawa , Toshihiro Ohki
发明人： Yuichi Minoura , Toshihide Kikkawa , Toshihiro Ohki
IPC分类号： H01L29/778 , H01L21/265 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/20 , H01L29/423 , H01L29/45
CPC分类号： H01L29/7787 , H01L21/2654 , H01L29/0603 , H01L29/1075 , H01L29/2003 , H01L29/42356 , H01L29/42376 , H01L29/452 , H01L29/66462
摘要： At least one kind of impurity selected from, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer of a compound semiconductor layered structure from a rear surface of the compound semiconductor layered structure to make a resistance value of the buffer layer high.
摘要翻译：从化合物半导体层叠结构的背面，至少从化合物半导体层叠结构体的缓冲层中导入至少一种选自例如Fe，C，B，Ti，Cr的杂质，形成电阻值的缓冲层高。

3. 发明申请

US20120217543A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120217543A1
公开(公告)日：2012-08-30
申请号：US13328244
申请日：2011-12-16
申请人： Yuichi MINOURA , Toshihide Kikkawa , Toshihiro Ohki
发明人： Yuichi MINOURA , Toshihide Kikkawa , Toshihiro Ohki
IPC分类号： H01L29/06 , H01L21/22
CPC分类号： H01L29/7787 , H01L21/2654 , H01L29/0603 , H01L29/1075 , H01L29/2003 , H01L29/42356 , H01L29/42376 , H01L29/452 , H01L29/66462
摘要： At least one kind of impurity selected from, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer of a compound semiconductor layered structure from a rear surface of the compound semiconductor layered structure to make a resistance value of the buffer layer high.
摘要翻译：从化合物半导体层叠结构的背面，至少从化合物半导体层叠结构体的缓冲层中导入至少一种选自例如Fe，C，B，Ti，Cr的杂质，形成电阻值的缓冲层高。

4. 发明申请

US20110024799A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20110024799A1
公开(公告)日：2011-02-03
申请号：US12845292
申请日：2010-07-28
申请人： Yuichi Minoura , Toshihide Kikkawa
发明人： Yuichi Minoura , Toshihide Kikkawa
IPC分类号： H01L29/205 , H01L21/20 , H01L21/335 , H01L33/00
CPC分类号： H01L21/30617 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L21/0331 , H01L29/0696 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01S5/0201 , H01S5/0216 , H01S5/0217 , H01S5/02476 , H01S5/34333
摘要： A method for manufacturing a compound semiconductor device includes forming a first compound semiconductor layer over a first substrate, the first compound semiconductor layer containing AlxGa1-xN (0≦x
摘要翻译：一种化合物半导体器件的制造方法，包括在第一衬底上形成第一化合物半导体层，所述第一化合物半导体层含有具有第一带隙的Al x Ga 1-x N（0＆lt; n 1; x 1）在所述第一化合物半导体层上形成第二化合物半导体层，所述第二化合物半导体层包含具有大于所述第一带隙的第二带隙的Al y In z Ga 1-y-z N（0

5. 发明授权

US08586433B2 Compound semiconductor device and manufacturing method thereof 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08586433B2
公开(公告)日：2013-11-19
申请号：US13493293
申请日：2012-06-11
申请人： Yuichi Minoura , Toshihide Kikkawa
发明人： Yuichi Minoura , Toshihide Kikkawa
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0878 , H01L29/2003 , H01L29/267 , H01L29/66712
摘要： A compound semiconductor device is provided with a first nitride semiconductor layer of a first conductivity type, a second nitride semiconductor layer of the first conductivity type which is formed over the first nitride semiconctor layer and being in contact with the first nitride semiconductor layer, a third nitride semiconductor layer of a second conductivity type being in contact with the second nitride semiconductor layer, a fourth nitride semiconductor layer of the first conductivity type being in contact with the third nitride semiconductor layer, and an insulating film insulating the first nitride semiconductor layer and the fourth nitride, semiconductor layer from each other. A source electrode is positioned inside an Outer edge of the insulating film in planar view.
摘要翻译：化合物半导体器件设置有第一导电类型的第一氮化物半导体层，第一导电类型的第二氮化物半导体层，其形成在第一氮化物半导体层上并与第一氮化物半导体层接触，第三导电类型的第三氮化物半导体层，与第二氮化物半导体层接触的第二导电类型的氮化物半导体层，与第三氮化物半导体层接触的第一导电类型的第四氮化物半导体层和将第一氮化物半导体层和第四氮化物，半导体层。在平面图中，源电极位于绝缘膜的外边缘的内侧。

6. 发明授权

US09034722B2 Method of removing a compound semiconductor layer from a compound semiconductor device 有权
标题翻译：从化合物半导体器件去除化合物半导体层的方法
公开(公告)号：US09034722B2
公开(公告)日：2015-05-19
申请号：US12845292
申请日：2010-07-28
申请人： Yuichi Minoura , Toshihide Kikkawa
发明人： Yuichi Minoura , Toshihide Kikkawa
IPC分类号： H01L21/268 , H01L21/306 , B82Y20/00 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/778 , H01L21/033 , H01L21/02 , H01L29/20 , H01S5/02 , H01S5/024 , H01S5/343
CPC分类号： H01L21/30617 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L21/0331 , H01L29/0696 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01S5/0201 , H01S5/0216 , H01S5/0217 , H01S5/02476 , H01S5/34333
摘要： A method for manufacturing a compound semiconductor device so as to separate a first substrate from a compound semiconductor laminated structure which includes forming a first compound semiconductor layer over a first substrate containing AlxGa1-xN (0≦x
摘要翻译：一种制造化合物半导体器件的方法，用于将第一衬底与化合物半导体层叠结构分离，所述化合物半导体层叠结构包括在包含Al x Ga 1-x N（0＆amp; n 1; x 1）的第一衬底上形成第一化合物半导体层并具有第一带隙 ; 在包含AlyInzGa1-y-zN（0

7. 发明申请

US20120241758A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20120241758A1
公开(公告)日：2012-09-27
申请号：US13493293
申请日：2012-06-11
申请人： Yuichi MINOURA , Toshihide Kikkawa
发明人： Yuichi MINOURA , Toshihide Kikkawa
IPC分类号： H01L29/20 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0878 , H01L29/2003 , H01L29/267 , H01L29/66712
摘要： A compound semiconductor device is provided with a first nitride semiconductor layer of a first conductivity type, a second nitride semiconductor layer of the first conductivity type which is formed over the first nitride semiconctor layer and being in contact with the first nitride semiconductor layer, a third nitride semiconductor layer of a second conductivity type being in contact with the second nitride semiconductor layer, a fourth nitride semiconductor layer of the first conductivity type being in contact with the third nitride semiconductor layer, and an insulating film insulating the first nitride semiconductor layer and the fourth nitride, semiconductor layer from each other. A source electrode is positioned inside an Outer edge of the insulating film in planar view.
摘要翻译：化合物半导体器件设置有第一导电类型的第一氮化物半导体层，第一导电类型的第二氮化物半导体层，其形成在第一氮化物半导体层上并与第一氮化物半导体层接触，第三导电类型的第三氮化物半导体层，与第二氮化物半导体层接触的第二导电类型的氮化物半导体层，与第三氮化物半导体层接触的第一导电类型的第四氮化物半导体层和将第一氮化物半导体层和第四氮化物，半导体层。在平面图中，源电极位于绝缘膜的外边缘的内侧。

8. 发明授权

US09276100B2 Semiconductor device having a gate recess structure 有权
标题翻译：具有栅极凹部结构的半导体器件
公开(公告)号：US09276100B2
公开(公告)日：2016-03-01
申请号：US13294740
申请日：2011-11-11
申请人： Hiroshi Endo , Toshihiro Ohki , Toshihide Kikkawa
发明人： Hiroshi Endo , Toshihiro Ohki , Toshihide Kikkawa
IPC分类号： H01L29/78 , H01L29/778 , H01L29/423 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42356 , H01L29/4236 , H01L29/42364 , H01L29/66462 , H01L29/7839 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257
摘要： A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.
摘要翻译：半导体器件包括设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，通过在第一半导体上的预定区域中去除一部分或全部第二半导体层而设置的栅极凹槽设置在所述栅极凹部和所述第二半导体层上的绝缘膜，设置在所述栅极凹部上方的绝缘膜的栅电极，以及设置在所述第一半导体层或所述第二半导体层上的源电极和漏电极，从而栅极凹部的中心部分比栅极凹部的周边部分高。

9. 发明申请

US20130105810A1 COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT 审中-公开
标题翻译：化合物半导体器件，其制造方法和电子电路
公开(公告)号：US20130105810A1
公开(公告)日：2013-05-02
申请号：US13613158
申请日：2012-09-13
申请人： Masato Nishimori , Toshihiro Ohki , Toshihide Kikkawa
发明人： Masato Nishimori , Toshihiro Ohki , Toshihide Kikkawa
IPC分类号： H01L29/20 , H01L29/06 , H01L21/20
CPC分类号： H01L29/66462 , H01L29/0843 , H01L29/2003 , H01L29/7787 , H03F1/3247 , H03F3/189 , H03F3/245
摘要： A compound semiconductor device includes: a first compound semiconductor layer in which carriers are formed; a second compound semiconductor layer, provided above the first compound semiconductor layer, to supply the carriers; and a third compound semiconductor layer provided above the second compound semiconductor layer, wherein the third compound semiconductor layer includes a area that has a carrier concentration higher than a carrier concentration of the second compound semiconductor layer.
摘要翻译：化合物半导体器件包括：形成载流子的第一化合物半导体层; 设置在所述第一化合物半导体层上方的第二化合物半导体层，以供应所述载体; 以及设置在所述第二化合物半导体层上方的第三化合物半导体层，其中所述第三化合物半导体层包括载流子浓度高于所述第二化合物半导体层的载流子浓度的区域。

10. 发明授权

US08426260B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08426260B2
公开(公告)日：2013-04-23
申请号：US13294726
申请日：2011-11-11
申请人： Toyoo Miyajima , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Masahito Kanamura
发明人： Toyoo Miyajima , Toshihide Kikkawa , Kenji Imanishi , Toshihiro Ohki , Masahito Kanamura
IPC分类号： H01L21/338 , H01L29/66
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/4236 , H01L29/7787
摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.
摘要翻译：化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第二化合物半导体层增加并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第二化合物半导体层增加。

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