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1. 发明申请

US20140113016A1 CROSSHEAD 有权
标题翻译：十字架
公开(公告)号：US20140113016A1
公开(公告)日：2014-04-24
申请号：US14119551
申请日：2012-01-10
申请人： Yuji Ito , Ryuichi Kawachi , Naoto Saito , Yukio Fujiwara , Satoru Araya , Kazuhiro Ohtaki , Masahiro Niihori , Takatoshi Watanabe , Naoya Tabuchi , Wataru Iwase
发明人： Yuji Ito , Ryuichi Kawachi , Naoto Saito , Yukio Fujiwara , Satoru Araya , Kazuhiro Ohtaki , Masahiro Niihori , Takatoshi Watanabe , Naoya Tabuchi , Wataru Iwase
IPC分类号： B29C47/00 , B29C47/14
CPC分类号： B29C47/0066 , B29C47/0019 , B29C47/0054 , B29C47/14 , B29C47/22 , B29C47/28 , B29C47/30 , B29C47/70 , B29C49/04 , B29C49/041 , B29C49/42 , B29C49/4252 , B29C2049/048 , B29C2793/0063 , B29C2793/0081 , B29L2031/7172
摘要： In a crosshead, a pair of sheets (7) are formed by bisecting a parison (3) suspended from a resin flow passage (30) formed between a core (9) and a die (8) by causing a first dividing body (33) of a separator (5, 5a) provided on the core (9) or the die (8) to contact a second dividing body (40) provided on the core (9) or the die (8).
摘要翻译：在十字头中，通过使形成在芯体（9）和模具（8）之间的树脂流路（30）悬挂的型坯（3）通过使第一分割体（33）平分，形成一对片（7））设置在芯（9）或模具（8）上以与设置在芯（9）或模具（8）上的第二分隔体（40）接触的分离器（5,5a）。

2. 发明授权

US08899954B2 Crosshead 有权
标题翻译：十字头
公开(公告)号：US08899954B2
公开(公告)日：2014-12-02
申请号：US14119551
申请日：2012-01-10
申请人： Yuji Ito , Ryuichi Kawachi , Naoto Saito , Yukio Fujiwara , Satoru Araya , Kazuhiro Ohtaki , Masahiro Niihori , Takatoshi Watanabe , Naoya Tabuchi , Wataru Iwase
发明人： Yuji Ito , Ryuichi Kawachi , Naoto Saito , Yukio Fujiwara , Satoru Araya , Kazuhiro Ohtaki , Masahiro Niihori , Takatoshi Watanabe , Naoya Tabuchi , Wataru Iwase
IPC分类号： B29C47/00 , B29C49/04 , B29C49/42 , B29C47/14 , B29C47/22 , B29L31/00 , B29C47/28
CPC分类号： B29C47/0066 , B29C47/0019 , B29C47/0054 , B29C47/14 , B29C47/22 , B29C47/28 , B29C47/30 , B29C47/70 , B29C49/04 , B29C49/041 , B29C49/42 , B29C49/4252 , B29C2049/048 , B29C2793/0063 , B29C2793/0081 , B29L2031/7172
摘要： In a crosshead, a pair of sheets (7) are formed by bisecting a parison (3) suspended from a resin flow passage (30) formed between a core (9) and a die (8) by causing a first dividing body (33) of a separator (5, 5a) provided on the core (9) or the die (8) to contact a second dividing body (40) provided on the core (9) or the die (8).
摘要翻译：在十字头中，通过使形成在芯体（9）和模具（8）之间的树脂流路（30）悬挂的型坯（3）通过使第一分割体（33）平分，形成一对片（7））设置在芯（9）或模具（8）上以与设置在芯（9）或模具（8）上的第二分隔体（40）接触的分离器（5,5a）。

3. 发明授权

US09358740B2 Production apparatus for producing hollow molded product 有权
标题翻译：生产中空成型制品的生产设备
公开(公告)号：US09358740B2
公开(公告)日：2016-06-07
申请号：US14004224
申请日：2012-03-09
申请人： Takatoshi Watanabe , Satoru Araya , Masahiro Niihori , Wataru Iwase , Naoya Tabuchi , Kazuhiro Ohtaki , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
发明人： Takatoshi Watanabe , Satoru Araya , Masahiro Niihori , Wataru Iwase , Naoya Tabuchi , Kazuhiro Ohtaki , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
IPC分类号： B29C49/28 , B29D22/00 , B29C65/00 , B29C47/00 , B29C69/00 , B29C51/12 , B29C51/26 , B29L31/00 , B29C51/02 , B29C51/10
CPC分类号： B29D22/003 , B29C47/0021 , B29C47/0054 , B29C47/0066 , B29C49/0047 , B29C49/04 , B29C49/28 , B29C51/02 , B29C51/105 , B29C51/12 , B29C51/261 , B29C51/267 , B29C66/1312 , B29C66/532 , B29C66/54 , B29C66/61 , B29C66/71 , B29C66/7234 , B29C66/73921 , B29C66/81463 , B29C66/8242 , B29C66/8322 , B29C66/83221 , B29C69/004 , B29C2049/0057 , B29K2623/065 , B29L2031/7172 , B29K2023/065
摘要： A production apparatus includes the following stations juxtaposed in the following sequence: a parison forming station for forming a parison; a built-in part attachment station where opposite sides of a center die provided with a built-in part are held between a pair of molding dies to locate the center die in the molding dies with the parison between the center die and the molding dies, and the built-in part being attached to the parison transferred to the molding dies; a molding station where the molding dies are closed to mold the hollow molded product; and a conveyance station for taking the hollow molded product out of the molding dies and conveying the hollow molded product. The center die is fixed at the built-in part attachment station, and the molding dies are configured to be movable back and forth between the built-in part attachment station and the molding station.
摘要翻译：制造装置包括以下顺序并列的以下工位：用于形成型坯的型坯成型台; 设置有内置部件的中央模具的相对侧的内置部件附接工位被保持在一对成型模具之间，以使中心模具与中心模具和成型模具之间的型坯定位在成型模具中，并且内置部件附接到转移到模具的型坯上; 成型台，其中模具封闭以模制中空模制产品; 以及用于将中空成型品从模具中取出并输送中空成型品的输送台。中心模具固定在内置零件安装台上，并且成型模具构造成可在内置零件安装台和模制工位之间来回移动。

4. 发明申请

US20130341825A1 PRODUCTION APPARATUS AND METHOD FOR PRODUCING HOLLOW MOLDED PRODUCT 有权
标题翻译：生产设备和生产中空成型产品的方法
公开(公告)号：US20130341825A1
公开(公告)日：2013-12-26
申请号：US14004224
申请日：2012-03-09
申请人： Takatoshi Watanabe , Satoru Araya , Masahiro Niihori , Wataru Iwase , Naoya Tabuchi , Kazuhiro Ohtaki , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
发明人： Takatoshi Watanabe , Satoru Araya , Masahiro Niihori , Wataru Iwase , Naoya Tabuchi , Kazuhiro Ohtaki , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
IPC分类号： B29D22/00
CPC分类号： B29D22/003 , B29C47/0021 , B29C47/0054 , B29C47/0066 , B29C49/0047 , B29C49/04 , B29C49/28 , B29C51/02 , B29C51/105 , B29C51/12 , B29C51/261 , B29C51/267 , B29C66/1312 , B29C66/532 , B29C66/54 , B29C66/61 , B29C66/71 , B29C66/7234 , B29C66/73921 , B29C66/81463 , B29C66/8242 , B29C66/8322 , B29C66/83221 , B29C69/004 , B29C2049/0057 , B29K2623/065 , B29L2031/7172 , B29K2023/065
摘要： A production apparatus includes the following stations juxtaposed in the following sequence: a parison forming station for forming a parison; a built-in part attachment station where opposite sides of a center die provided with a built-in part are held between a pair of molding dies to locate the center die in the molding dies with the parison between the center die and the molding dies, and the built-in part being attached to the parison transferred to the molding dies; a molding station where the molding dies are closed to mold the hollow molded product; and a conveyance station for taking the hollow molded product out of the molding dies and conveying the hollow molded product. The center die is fixed at the built-in part attachment station, and the molding dies are configured to be movable back and forth between the built-in part attachment station and the molding station.
摘要翻译：制造装置包括以下顺序并列的以下工位：用于形成型坯的型坯成型台; 设置有内置部件的中央模具的相对侧的内置部件附接工位被保持在一对成型模具之间，以使中心模具与中心模具和成型模具之间的型坯定位在成型模具中，并且内置部件附接到转移到模具的型坯上; 成型台，其中模具封闭以模制中空模制产品; 以及用于将中空成型品从模具中取出并输送中空成型品的输送台。中心模具固定在内置零件安装台上，并且成型模具构造成可在内置零件安装台和模制工位之间来回移动。

5. 发明申请

US20140065255A1 GUIDE DEVICE FOR PARISON 审中-公开
标题翻译：巴黎指导设备
公开(公告)号：US20140065255A1
公开(公告)日：2014-03-06
申请号：US13824266
申请日：2012-03-28
申请人： Satoru Araya , Shinsuke Yamashita , Hiroaki Hayashi , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
发明人： Satoru Araya , Shinsuke Yamashita , Hiroaki Hayashi , Yuji Hisatomi , Naoto Saito , Naoyuki Murata , Ryuichi Kawachi , Yuji Ito
IPC分类号： B29C49/42
CPC分类号： B29C49/4242 , B29C48/0017 , B29C48/0022 , B29C48/07 , B29C48/09 , B29C49/02 , B29C49/04 , B29C49/4247 , B29C49/4252 , B29C2049/048 , B29C2793/0063 , B29C2793/0081
摘要： A guide device 3 for smoothing into a shape of a flat plate a parison P having a semi-circular shape in a planar cross-section, the parison being extruded from an extrusion device 1 and divided into two by a cutter 2, wherein the guide device includes a spiral guide element 4 that is in contact with the parison P while rotating about an axis, the spiral guide element being formed so as to rotate in opposite directions with each other on the left and right of a middle part 4C as a boundary so as to expand the parison P to the left and right. The spiral guide element 4 is formed in a protruding shape on an outer periphery of a shaft 5 rotated by the driving of a drive motor M.
摘要翻译：导向装置3，用于平坦化平板状的具有半圆形状的型坯P的平板形状，该型坯从挤出装置1挤出并由切割器2分成两部分，其中导向件装置包括在围绕轴线旋转的同时与型坯P接触的螺旋引导元件4，螺旋引导元件形成为在中间部分4C的左右两侧彼此相反的方向作为边界以便将型坯P向左和向右扩展。螺旋引导元件4通过驱动马达M的驱动而旋转的轴5的外周形成为突出形状。

6. 发明授权

US08063445B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08063445B2
公开(公告)日：2011-11-22
申请号：US12462909
申请日：2009-08-11
申请人： Shinjiro Kato , Naoto Saito
发明人： Shinjiro Kato , Naoto Saito
IPC分类号： H01L29/76 , H01L29/788
CPC分类号： H01L29/0847 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the local oxidation-of-silicon (LOCOS) offset MOS transistor having high withstanding voltage, in order to prevent a gate oxide film (6) formed on a channel formation region (7) from being etched at a time of removing the gate oxide film (6) with a polycrystalline silicon gate electrode (8) being used as a mask to form a second conductivity type high concentration source region (4) and a second conductivity type high concentration drain region (5), a source field oxide film (14) is formed also on a source side of the channel formation region (7), and in addition, a length of a second conductivity type high concentration source field region (13) is optimized. Accordingly, it is possible to obtain a MOS transistor having high driving performance and high withstanding voltage with a thick gate oxide film.
摘要翻译：提供一种半导体器件，其包括具有高驱动性能的金属氧化物半导体（MOS）晶体管和具有较厚栅极氧化膜的高耐压。在具有高耐受电压的局部氧化硅（LOCOS）偏移MOS晶体管中，为了防止形成在沟道形成区域（7）上的栅极氧化膜（6）在去除栅极氧化物时被蚀刻使用多晶硅栅电极（8）作为掩模的膜（6）形成第二导电型高浓度源区（4）和第二导电型高浓度漏区（5），源场氧化膜 14）也形成在沟道形成区域（7）的源极侧，此外，第二导电型高浓度源极场区域（13）的长度被优化。因此，可以通过厚栅极氧化膜获得具有高驱动性能和高耐受电压的MOS晶体管。

7. 发明申请

US20090152558A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090152558A1
公开(公告)日：2009-06-18
申请号：US12315634
申请日：2008-12-04
申请人： Naoto Saito
发明人： Naoto Saito
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66636 , H01L29/4236 , H01L29/66621 , H01L29/66787 , H01L29/7834
摘要： Provided is a lateral semiconductor device with a trench structure for improving driving capability. A trench portion is formed in a well to give concave and convex portions in a gate width direction. A gate electrode is formed inside and above the trench portion with an insulating film therebetween. A source region is formed on one side of the gate electrode in a gate length direction, and a drain region is formed on the other side, both formed by impurity diffusion from polycrystalline silicon containing an impurity and filling the inside of the trench portion, deep enough to reach vicinity of the bottom of the gate electrode (vicinity of bottom of trench portion). By thus forming a deep source region and a deep drain region, current flow that would otherwise concentrate on a shallow part in the gate electrode becomes uniform throughout the trench portion and widening of an effective gate width owing to the concave and convex portions formed in the well lowers ON resistance, improving the driving capability.
摘要翻译：提供一种具有用于提高驱动能力的沟槽结构的横向半导体器件。在阱中形成沟槽部，以在栅极宽度方向上形成凹部和凸部。在沟槽部分的内部和上方形成栅电极，其间具有绝缘膜。源极区域在栅极长度方向的一侧形成，另一侧形成漏极区域，二者均由含有杂质的多晶硅的杂质扩散形成，并填充沟槽部分的内部，深度足以到达栅电极的底部附近（沟槽部分的底部附近）。由此形成深源极区域和深漏极区域，否则将集中在栅极电极的浅部上的电流在整个沟槽部分变得均匀，并且由于在良好的降低ON电阻，提高驾驶能力。

8. 发明授权

US5851909A Method of producing semiconductor device using an adsorption layer 失效
标题翻译：使用吸附层制造半导体器件的方法
公开(公告)号：US5851909A
公开(公告)日：1998-12-22
申请号：US6152
申请日：1993-01-19
申请人： Masaaki Kamiya , Kenji Aoki , Naoto Saito
发明人： Masaaki Kamiya , Kenji Aoki , Naoto Saito
IPC分类号： H01L21/225 , H01L21/336 , H01L29/08 , H01L29/78
CPC分类号： H01L29/6659 , H01L21/2254 , H01L29/0847 , H01L29/78 , Y10S438/974
摘要： An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions for a metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double doped drain structure. The thus formed impurity-doped region is ultrashallow, thereby producing high speed semiconductor devices of small dimensions.
摘要翻译：在衬底表面上形成杂质吸附层，并进行固相热扩散以形成具有轻掺杂漏极结构或双掺杂漏极结构的金属 - 绝缘体 - 半导体场效应晶体管的源区和漏区。这样形成的杂质掺杂区域是超浅的，从而制造尺寸小的高速半导体器件。

9. 发明授权

US5753530A Impurity doping method with diffusion source of boron-silicide film 失效
标题翻译：掺杂掺杂硼硅化物膜扩散源的方法
公开(公告)号：US5753530A
公开(公告)日：1998-05-19
申请号：US449655
申请日：1995-05-24
申请人： Tadao Akamine , Naoto Saito , Kenji Aoki , Yoshikazu Kojima
发明人： Tadao Akamine , Naoto Saito , Kenji Aoki , Yoshikazu Kojima
IPC分类号： H01L21/225 , H01L21/285 , H01L21/306 , H01L21/331 , H01L21/336 , H01L21/385
CPC分类号： H01L21/02046 , H01L21/2257 , H01L21/28512 , H01L29/66272 , H01L29/66545 , H01L29/66575 , Y10S438/906
摘要： A solid phase diffusion process using boron silicide film as diffusion source to improve controllability of diffusion of boron impurity into a silicon substrate in order to achieve a shallow junction. The process includes: cleaning the surface of a Si substrate by removing the native oxide film thereof to expose an active surface; treating the active surface to form thereon a boron silicide film as an impurity source; and introducing boron impurity from the boron silicide film into the Si substrate to form a boron diffusion layer. In this manner, a boron diffusion layer having a high surface concentration and a shallow junction can be formed because the boron silicide film is formed directly on the surface of the Si substrate. Because the boron silicide film is chemically and physically stable, an improved diffusion controllability is obtained. The diffusion controllability is further improved by accurately evaluating the impurity film optically during the fabrication process. A structure composed of a boron diffusion layer and a boron silicide region provides a high speed, highly integrated, and highly reliable semiconductor device, particularly when the boron silicide region is disposed between an impurity region and an electrode metal.
摘要翻译：使用硅化硅膜作为扩散源的固相扩散工艺，以提高硼杂质扩散到硅衬底中的可控性，以便实现浅结。该方法包括：通过去除其自然氧化膜以暴露活性表面来清洁Si衬底的表面; 处理活性表面以形成作为杂质源的硼化硅膜; 并将硼杂质从硅化硅膜引入Si衬底中以形成硼扩散层。以这种方式，可以形成具有高表面浓度和浅结的硼扩散层，因为硅化硅膜直接形成在Si衬底的表面上。因为硼化硅膜在化学和物理上是稳定的，所以获得改进的扩散控制性。通过在制造过程中光学地精确评估杂质膜，进一步提高了扩散控制性。由硼扩散层和硼硅化物区组成的结构提供高速，高度集成且高度可靠的半导体器件，特别是当硅化硼区域设置在杂质区域和电极金属之间时。

10. 发明授权

US5514620A Method of producing PN junction device 失效
标题翻译：生产PN结器件的方法
公开(公告)号：US5514620A
公开(公告)日：1996-05-07
申请号：US210769
申请日：1994-03-21
申请人： Kenji Aoki , Tadao Akamine , Naoto Saito
发明人： Kenji Aoki , Tadao Akamine , Naoto Saito
IPC分类号： H01L21/225 , H01L21/329 , H01L21/822 , H01L27/04 , H01L29/861 , H01L29/866 , H01L29/88 , H01L29/93 , H01L31/0248 , H01L31/103 , H01L31/18
CPC分类号： H01L29/66151 , H01L21/2254 , H01L29/66136 , H01L29/66174 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/914
摘要： A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device.
摘要翻译：通过从N型半导体层的表面去除惰性膜以暴露活性面，然后将含有P型杂质成分的源气体施加到活性面上形成杂质吸附膜，形成PN结器件，之后从由P型杂质吸附膜构成的扩散源向N型半导体层中进行杂质的固相扩散，形成P型半导体层，由此提供PN结。最后，一对电极连接到各个半导体层以形成PN结器件。

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