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1. 发明申请

US20080217623A1 OPTICAL SENSOR ELEMENT AND METHOD FOR DRIVING THE SAME 失效
标题翻译：光传感器元件及其驱动方法
公开(公告)号：US20080217623A1
公开(公告)日：2008-09-11
申请号：US11850307
申请日：2007-09-05
申请人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
发明人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
IPC分类号： H01L31/0368
CPC分类号： H01L31/1055 , H01L31/035272
摘要： An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vb is applied when detecting the photocurrent, the reverse bias voltage Vb satisfying a following relation. V1
摘要翻译：光学传感器元件包括：形成在基板上的n型半导体区域; 形成在p型半导体区域和n型半导体区域之间的衬底上并且杂质浓度低于p型半导体区域和n型半导体区域的i型半导体区域; 形成在绝缘膜上并与p型半导体区连接的阳极电极; 以及形成在绝缘膜上并连接到n型半导体区域的阴极电极。当检测到光电流时，施加反向偏置电压V BAT，反向偏置电压V BAT满足以下关系。 <？in-line-formula description =“In-line Formulas”end =“lead”？> V <1> > <？in-line-formula description =“In-line Formulas”end =“tail”？>

2. 发明授权

US07692261B2 Optical sensor element and method for driving the same 失效
标题翻译：光传感元件及其驱动方法
公开(公告)号：US07692261B2
公开(公告)日：2010-04-06
申请号：US11850307
申请日：2007-09-05
申请人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
发明人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
IPC分类号： H01L31/075
CPC分类号： H01L31/1055 , H01L31/035272
摘要： An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vb is applied when detecting the photocurrent, the reverse bias voltage Vb satisfying a following relation. V1
摘要翻译：光学传感器元件包括：形成在基板上的n型半导体区域; 形成在p型半导体区域和n型半导体区域之间的衬底上并且杂质浓度低于p型半导体区域和n型半导体区域的i型半导体区域; 形成在绝缘膜上并与p型半导体区连接的阳极电极; 以及形成在绝缘膜上并连接到n型半导体区域的阴极电极。当检测到光电流时，施加反向偏置电压Vb，反向偏置电压Vb满足以下关系。 V1

3. 发明授权

US09209311B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09209311B2
公开(公告)日：2015-12-08
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/66
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

4. 发明申请

US20080018631A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20080018631A1
公开(公告)日：2008-01-24
申请号：US11776018
申请日：2007-07-11
申请人： Tsuyoshi HIOKI , Shuichi Uchikoga
发明人： Tsuyoshi HIOKI , Shuichi Uchikoga
IPC分类号： G06F3/038
CPC分类号： G02F1/133305 , G02F1/133526
摘要： It is made possible to provide a low-cost highly reliable display device which does not lose the flexibility of itself and which can transmit the allowable range of the flexibility to the user. A display device includes: a display part having a display face and being flexible; and a restriction part having a plurality of first convex parts to restrict a bending quantity of the display part.
摘要翻译：可以提供一种低成本，高可靠性的显示装置，其不会失去其自身的灵活性，并且可以向用户传输允许的灵活性范围。一种显示装置，包括：具有显示面并具有柔性的显示部; 以及具有多个第一凸部以限制显示部的弯曲量的限制部。

5. 发明申请

US20120211745A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120211745A1
公开(公告)日：2012-08-23
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

6. 发明授权

US07002723B2 Display device 失效
标题翻译：显示设备
公开(公告)号：US07002723B2
公开(公告)日：2006-02-21
申请号：US10968989
申请日：2004-10-21
申请人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
发明人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
IPC分类号： G02F1/153 , G02F1/15 , G09G3/38
CPC分类号： G02F1/1525 , G02F1/155 , G02F1/157
摘要： In a display device, a first electrode and a second electrode are mounted on a first substrate, a second substrate is arranged to face the first substrate with a gap provided between the first substrate and the second substrate, and a third electrode is mounted on the second substrate. A first layer is formed in a gap between the first substrate and the second substrate at the side of the first substrate and containing a ECL material that emits light due to electrochemical oxidation or reduction. A second layer is formed in the gap between the first substrate and the second substrate at the side of the second substrate and containing a EC material having the color changed due to electrochemical oxidation or reduction.
摘要翻译：在显示装置中，第一电极和第二电极安装在第一基板上，第二基板被布置为在第一基板和第二基板之间具有间隙而面向第一基板，并且第三电极安装在第一基板上第二基板。在第一基板一侧的第一基板和第二基板之间的间隙中形成第一层，并且包含由于电化学氧化或还原而发光的ECL材料。在第二基板一侧的第一基板和第二基板之间的间隙中形成第二层，并且包含由于电化学氧化或还原而具有颜色变化的EC材料。

7. 发明申请

US20070120117A1 SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20070120117A1
公开(公告)日：2007-05-31
申请号：US11531098
申请日：2006-09-12
申请人： Isao Takasu , Isao Amemiya , Shuichi Uchikoga , Rei Hasegawa , Hideyuki Nakao
发明人： Isao Takasu , Isao Amemiya , Shuichi Uchikoga , Rei Hasegawa , Hideyuki Nakao
IPC分类号： H01L29/08
CPC分类号： H01L29/78681
摘要： The present invention provides a semiconductor element having a semiconductor layer that has high carrier mobility and is easy to form. This semiconductor element includes a semiconductor layer made of TeI4, which has a clustering structure.
摘要翻译：本发明提供了具有高载流子迁移率且容易形成的半导体层的半导体元件。该半导体元件包括具有聚集结构的由TeI 4 Si制成的半导体层。

8. 发明授权

US07868545B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07868545B2
公开(公告)日：2011-01-11
申请号：US11776018
申请日：2007-07-11
申请人： Tsuyoshi Hioki , Shuichi Uchikoga
发明人： Tsuyoshi Hioki , Shuichi Uchikoga
IPC分类号： H01J1/62
CPC分类号： G02F1/133305 , G02F1/133526
摘要： It is made possible to provide a low-cost highly reliable display device which does not lose the flexibility of itself and which can transmit the allowable range of the flexibility to the user. A display device includes: a display part having a display face and being flexible; and a restriction part having a plurality of first convex parts to restrict a bending quantity of the display part.
摘要翻译：可以提供一种低成本，高可靠性的显示装置，其不会失去其自身的灵活性，并且可以向用户传输允许的灵活性范围。一种显示装置，包括：具有显示面并具有柔性的显示部; 以及具有多个第一凸部以限制显示部的弯曲量的限制部。

9. 发明申请

US20050117192A1 Display device 失效
标题翻译：显示设备
公开(公告)号：US20050117192A1
公开(公告)日：2005-06-02
申请号：US10968989
申请日：2004-10-21
申请人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
发明人： Shintaro Enomoto , Shuichi Uchikoga , Isao Amemiya , Yutaka Nakai
IPC分类号： G02F1/153 , G02F1/15 , G02F1/155 , G02F1/157 , G02F1/163 , G09F9/30 , G09G3/00
CPC分类号： G02F1/1525 , G02F1/155 , G02F1/157
摘要： In a display device, a first electrode and a second electrode are mounted on a first substrate, a second substrate is arranged to face the first substrate with a gap provided between the first substrate and the second substrate, and a third electrode is mounted on the second substrate. A first layer is formed in a gap between the first substrate and the second substrate at the side of the first substrate and containing a ECL material that emits light due to electrochemical oxidation or reduction. A second layer is formed in the gap between the first substrate and the second substrate at the side of the second substrate and containing a EC material having the color changed due to electrochemical oxidation or reduction.
摘要翻译：在显示装置中，第一电极和第二电极安装在第一基板上，第二基板被布置为在第一基板和第二基板之间具有间隙而面对第一基板，并且第三电极安装在第一基板上第二基板。在第一基板一侧的第一基板和第二基板之间的间隙中形成第一层，并且包含由于电化学氧化或还原而发光的ECL材料。在第二基板一侧的第一基板和第二基板之间的间隙中形成第二层，并且包含由于电化学氧化或还原而具有颜色变化的EC材料。

10. 发明申请

US20100127266A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法，显示装置及其制造方法
公开(公告)号：US20100127266A1
公开(公告)日：2010-05-27
申请号：US12620112
申请日：2009-11-17
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

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