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    • 3. 发明申请
    • DISPLAY DRIVING DEVICE AND DISPLAY DRIVING SYSTEM
    • 显示驱动装置和显示驱动系统
    • US20100302287A1
    • 2010-12-02
    • US12785982
    • 2010-05-24
    • Yukari KATAYAMAAkihito AkaiYoshiki KurokawaYusuke Uchida
    • Yukari KATAYAMAAkihito AkaiYoshiki KurokawaYusuke Uchida
    • G09G5/10G09G5/00
    • G09G3/3648G09G2310/027G09G2320/0252G09G2320/0261G09G2320/041G09G2340/16
    • Overdrive over multiple frames is made more efficient in a display device drive circuit that drives a display device so slow in response that target brightness is not reached even after overdrive is performed for one frame. When a display gray scale is changed from a first gray scale to a second gray scale, a display driving device varies overdrive driving voltage according to the number of frames since the point of time of the change. This makes it possible to obtain high-speed luminance response. When the number of frames for which an identical image is continuously displayed is known beforehand, the number of frames is set in a display pattern setting register and a function of detecting timing of a change of images is provided. This enables efficient overdrive. At low temperature, further, a display image is updated once for several frames according to temperature information. This enhances the visibility of the image.
    • 在显示设备驱动电路中,即使在一帧执行过驱动之后,在显示设备驱动电路中对驱动显示设备如此慢的响应也不会达到目标亮度,因此在多个帧上进行过载。 当显示灰度级从第一灰度级变为第二灰度级时,显示驱动装置根据从改变的时间点开始的帧数来改变过驱动驱动电压。 这使得可以获得高速亮度响应。 当预先知道连续显示相同图像的帧数时,在显示模式设置寄存器中设置帧数,并且提供检测图像改变定时的功能。 这样可以实现高效的超速运行。 此外,在低温下,显示图像根据温度信息更新一次数帧。 这增强了图像的可视性。
    • 4. 发明申请
    • PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR
    • 照相传感器的照相传感器和制造方法
    • US20090152563A1
    • 2009-06-18
    • US12333454
    • 2008-12-12
    • Masami HayashiYusuke Uchida
    • Masami HayashiYusuke Uchida
    • H01L31/112H01L31/18
    • H01L27/14609H01L27/14692
    • The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.
    • 考虑到与非晶硅的粘合性,本发明防止源电极和漏电极断开。 根据本发明的光传感器是具有TFT阵列基板的光传感器,TFT阵列基板具有以阵列形式布置薄膜晶体管的元件区域,光传感器包括设置在薄膜上方的钝化膜 晶体管,并且其中形成接触孔;以及光电二极管,其通过接触孔连接到薄膜晶体管的漏电极,其中钝化膜和栅绝缘膜在元件外部的外围区域中被去除 区域,并且周边区域中的钝化膜的边缘形成在与基板的周边上的栅极绝缘膜的边缘或栅极绝缘膜的边缘的外侧相同的位置处。
    • 8. 发明申请
    • THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
    • 薄膜晶体管,其制造方法和显示器件
    • US20090159884A1
    • 2009-06-25
    • US12335806
    • 2008-12-16
    • Koji ODANaoki NakagawaTakeshi OnoYusuke Uchida
    • Koji ODANaoki NakagawaTakeshi OnoYusuke Uchida
    • H01L29/78H01L21/02
    • H01L29/4908H01L29/66765
    • A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.
    • 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3,N 2和SiH 4,H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域,并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管,其制造方法以及安装在其上的薄膜晶体管的显示装置。