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1. 发明授权

US08865007B2 Method for making three-dimensional nano-structure array 有权
标题翻译：制备三维纳米结构阵列的方法
公开(公告)号：US08865007B2
公开(公告)日：2014-10-21
申请号：US13340221
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
IPC分类号： B29C59/14 , B82Y40/00 , B81C1/00
CPC分类号： B81C1/00111 , B82Y40/00 , G03F7/0002
摘要： A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.
摘要翻译：提供了制备三维纳米结构阵列的方法。该方法包括以下步骤。提供基地。掩模层位于基座上。掩模层被图案化，并且在掩模层的表面上形成许多条形突起结构，在突出结构的数量的两个相邻的突出结构中的每一个之间限定了许多以露出基部的一部分。基底的暴露部分通过狭槽被蚀刻，使得两个相邻的突出结构中的每一个开始面对面地倾斜，直到它们彼此接触以形成突出的对。去除掩模层。

2. 发明授权

US09556018B2 Three-dimensional nano-structure array 有权
标题翻译：三维纳米结构阵列
公开(公告)号：US09556018B2
公开(公告)日：2017-01-31
申请号：US13340194
申请日：2011-12-29
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Yuan-Hao Jin , Shou-Shan Fan
IPC分类号： B32B3/30 , B81C1/00 , B82Y30/00
CPC分类号： B81C1/00111 , B82Y30/00 , Y10T428/24479 , Y10T428/2457
摘要： A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.
摘要翻译：三维纳米结构阵列包括基底和多个三维纳米结构。每个三维纳米结构具有并排排列的第一峰和第二峰。在第一峰和第二峰之间限定第一凹槽。在两个相邻的三维纳米结构之间限定第二凹槽。第一槽的深度低于第二槽的深度。

3. 发明授权

US08796716B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08796716B2
公开(公告)日：2014-08-05
申请号：US13479233
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/005
摘要： A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极覆盖第一半导体层的整个表面。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

4. 发明授权

US08759858B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08759858B2
公开(公告)日：2014-06-24
申请号：US13479230
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/06 , H01L33/22
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。衬底包括外延生长表面和发光表面。第一半导体层，有源层和第二半导体层堆叠在外延生长表面上。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面为M形。

5. 发明授权

US08790940B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08790940B2
公开(公告)日：2014-07-29
申请号：US13479232
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/005 , H01L33/24
摘要： A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：制造发光二极管的方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。形成多个三维纳米结构。在三维纳米结构的数量上依次生长活性层和第二半导体层。去除衬底并暴露第一半导体层的表面。施加第一电极以覆盖暴露的表面。第二电极与第二半导体层电连接。

6. 发明授权

US08629424B2 Light emitting diode with three-dimensional nano-structures 有权
标题翻译：具有三维纳米结构的发光二极管
公开(公告)号：US08629424B2
公开(公告)日：2014-01-14
申请号：US13479227
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L29/06
CPC分类号： H01L33/24 , H01L33/06 , H01L33/20 , H01L33/22
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层和发光面的第一表面的表面上，并且每个三维纳米结构的横截面为M形。

7. 发明授权

US08778709B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08778709B2
公开(公告)日：2014-07-15
申请号：US13479229
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0066 , H01L33/06 , H01L33/22 , H01L33/24
摘要： A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.
摘要翻译：制造发光二极管的方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。通过去除图案化掩模层形成多个三维纳米结构。在三维纳米结构的数量上依次生长有源层和第二半导体层。第一电极与第一半导体层电连接。第二电极被定位成覆盖远离有源层的第二半导体层的整个表面。

8. 发明授权

US08821743B2 Manufacturing method of grating 有权
标题翻译：光栅制造方法
公开(公告)号：US08821743B2
公开(公告)日：2014-09-02
申请号：US13658043
申请日：2012-10-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： C03C15/00
CPC分类号： C03C15/00 , G02B5/1809 , G02B5/1857
摘要： The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a patterned mask layer is formed on a surface of the substrate. Third, the substrate with the patterned mask layer is placed in a microwave plasma system. Fourth, a plurality of etching gases are guided into the microwave plasma system simultaneously to etch the substrate through three stages. The etching gas includes carbon tetrafluoride (CF4), argon (Ar2), and sulfur hexafluoride (SF6). Finally, the patterned mask layer is removed.
摘要翻译：本公开涉及一种制造光栅的方法。该方法包括以下步骤。首先，提供基板。其次，在基板的表面上形成有图案的掩模层。第三，将具有图案化掩模层的衬底放置在微波等离子体系中。第四，多个蚀刻气体同时被引导到微波等离子体系中，以通过三个阶段蚀刻衬底。蚀刻气体包括四氟化碳（CF 4），氩（Ar 2）和六氟化硫（SF 6）。最后，去除图案化的掩模层。

9. 发明授权

US08785955B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US08785955B2
公开(公告)日：2014-07-22
申请号：US13477273
申请日：2012-05-22
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/32
摘要： A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
摘要翻译：提供了包括基板，第一半导体层，有源层和第二半导体层的发光二极管。第一半导体层包括第一表面和第二表面，并且第一表面连接到基板。有源层和第二半导体层以该顺序堆叠在第二表面上，并且第二半导体层远离有源层的表面被配置为发光表面。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。多个三维纳米结构位于第一半导体层的第一表面的表面上并排排列，并且每个三维纳米结构的横截面是M形的。

10. 发明授权

US08785221B2 Method for making light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08785221B2
公开(公告)日：2014-07-22
申请号：US13479234
申请日：2012-05-23
申请人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
发明人： Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/005 , H01L33/24
摘要： A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.
摘要翻译：提供一种制造发光二极管的方法。该方法包括以下步骤。提供基板。在衬底的表面上生长第一半导体层。图案化的掩模层位于第一半导体层的表面上，并且图案化掩模层包括多个棒状突出结构，在每个两个相邻的突出结构之间限定狭缝以暴露第一半导体层的一部分。暴露的第一半导体层被蚀刻以形成突出的一对。通过去除图案化掩模层形成多个三维纳米结构。在三维纳米结构的数量上依次生长有源层和第二半导体层。第一电极与第一半导体层电连接。第二电极与第二半导体层电连接。

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