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1. 发明授权

US08718076B2 WiMAX R6 management protocol 有权
标题翻译： WiMAX R6管理协议
公开(公告)号：US08718076B2
公开(公告)日：2014-05-06
申请号：US13454740
申请日：2012-04-24
申请人： Zhihong Chen , Randy Kuang
发明人： Zhihong Chen , Randy Kuang
IPC分类号： H04L12/28
CPC分类号： H04L69/08 , H04L43/0805 , H04L43/10 , H04L43/18 , H04W92/12 , H04W92/14
摘要： Within an access services network (ASN) operable for providing wireless access services to an access terminal and including a base station communicatively coupled to an ASN gateway, a new management protocol is provided for managing the R6 communications. The protocol includes a common set of message types that may be used for data plane, control plane, and individual peer applications communicating over the control plane. In one embodiment, a keepalive procedure or process is used to manage the R6 interface between the ASN gateway and the base station by sending keepalive messages through an established data path tunnel and maintaining one or more keepalive timers.
摘要翻译：在可操作用于向接入终端提供无线接入服务并且包括通信地耦合到ASN网关的基站的接入服务网络（ASN）内，提供用于管理R6通信的新管理协议。该协议包括可用于数据平面，控制平面和通过控制平面进行通信的各个对等应用的通用消息类型集合。在一个实施例中，通过在建立的数据路径隧道发送保持性消息并维护一个或多个保持活动定时器，使用保持活动过程或过程来管理ASN网关和基站之间的R6接口。

2. 发明申请

US20120207116A1 WIMAX R6 MANAGEMENT PROTOCOL 有权
标题翻译： WIMAX R6管理协议
公开(公告)号：US20120207116A1
公开(公告)日：2012-08-16
申请号：US13454740
申请日：2012-04-24
申请人： Zhihong Chen , Randy Kuang
发明人： Zhihong Chen , Randy Kuang
IPC分类号： H04W40/00
CPC分类号： H04L69/08 , H04L43/0805 , H04L43/10 , H04L43/18 , H04W92/12 , H04W92/14
摘要： Within an access services network (ASN) operable for providing wireless access services to an access terminal and including a base station communicatively coupled to an ASN gateway, a new management protocol is provided for managing the R6 communications. The protocol includes a common set of message types that may be used for data plane, control plane, and individual peer applications communicating over the control plane. In one embodiment, a keepalive procedure or process is used to manage the R6 interface between the ASN gateway and the base station by sending keepalive messages through an established data path tunnel and maintaining one or more keepalive timers.
摘要翻译：在可操作用于向接入终端提供无线接入服务并且包括通信地耦合到ASN网关的基站的接入服务网络（ASN）内，提供用于管理R6通信的新管理协议。该协议包括可用于数据平面，控制平面和通过控制平面进行通信的各个对等应用的通用消息类型集合。在一个实施例中，通过在建立的数据路径隧道发送保持性消息并维护一个或多个保持活动定时器，使用保持活动过程或过程来管理ASN网关和基站之间的R6接口。

3. 发明授权

US08184644B1 WiMAX R6 management protocol 有权
标题翻译： WiMAX R6管理协议
公开(公告)号：US08184644B1
公开(公告)日：2012-05-22
申请号：US11712347
申请日：2007-02-28
申请人： Zhihong Chen , Randy Kuang
发明人： Zhihong Chen , Randy Kuang
IPC分类号： H04L12/28
CPC分类号： H04L69/08 , H04L43/0805 , H04L43/10 , H04L43/18 , H04W92/12 , H04W92/14
摘要： Within an access services network (ASN) operable for providing wireless access services to an access terminal and including a base station communicatively coupled to an ASN gateway, a new management protocol is provided for managing the R6 communications. The protocol includes a common set of message types that may be used for data plane, control plane, and individual peer applications communicating over the control plane. In one embodiment, a keepalive procedure or process is used to manage the R6 interface between the ASN gateway and the base station by sending keepalive messages through an established data path tunnel and maintaining one or more keepalive timers.
摘要翻译：在可操作用于向接入终端提供无线接入服务并且包括通信地耦合到ASN网关的基站的接入服务网络（ASN）内，提供用于管理R6通信的新管理协议。该协议包括可用于数据平面，控制平面和通过控制平面进行通信的各个对等应用的通用消息类型集合。在一个实施例中，通过在建立的数据路径隧道发送保持性消息并维护一个或多个保持活动定时器，使用保持活动过程或过程来管理ASN网关和基站之间的R6接口。

4. 发明授权

US09082856B2 Graphene devices with local dual gates 有权
标题翻译：石墨烯装置与本地双门
公开(公告)号：US09082856B2
公开(公告)日：2015-07-14
申请号：US13613198
申请日：2012-09-13
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han
IPC分类号： H01L29/66 , H01L29/786 , H01L29/16 , H01L29/49
CPC分类号： H01L29/66045 , H01L21/02178 , H01L21/02181 , H01L21/02527 , H01L21/044 , H01L29/1606 , H01L29/42376 , H01L29/42384 , H01L29/4908 , H01L29/4916 , H01L29/517 , H01L29/66015 , H01L29/66742 , H01L29/78645 , H01L29/78648 , H01L29/78684
摘要： An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer.
摘要翻译：电子设备包括绝缘体，嵌入在绝缘体中的局部第一栅极，第一栅极的顶表面与绝缘体的表面基本共面;形成在第一栅极和绝缘体上的第一介电层，以及沟道。通道包括形成在第一介电层上的双层石墨烯层。第一电介质层提供基本上平坦的表面，在其上形成沟道。形成在双层石墨烯层上的第二介电层和在第二介电层上形成的局部第二栅极。局部第一和第二栅极中的每一个电容耦合到双层石墨烯层的沟道。局部第一和第二栅极形成第一对栅极以局部控制双层石墨烯层的第一部分。

5. 发明申请

US20120326126A1 Graphene or Carbon Nanotube Devices with Localized Bottom Gates and Gate Dielectric 有权
标题翻译：石墨烯或碳纳米管器件，具有局部底栅和栅介质
公开(公告)号：US20120326126A1
公开(公告)日：2012-12-27
申请号：US13167570
申请日：2011-06-23
申请人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
发明人： Zhihong Chen , Aaron Daniel Franklin , Shu-Jen Han , James Bowler Hannon , Katherine L. Saenger , George Stojan Tulevski
IPC分类号： H01L21/336 , H01L29/786 , H01L29/06 , H01L29/16 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/7781 , B82Y10/00 , B82Y30/00 , H01L29/1075 , H01L29/1606 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/78684 , H01L51/0023 , H01L51/0048 , H01L51/0545 , H01L51/055
摘要： Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.
摘要翻译：提供具有基于纳米材料的通道（例如，碳纳米管或石墨烯通道）的晶体管器件及其制造技术。一方面，提供一种晶体管器件。晶体管器件包括衬底; 衬底上的绝缘体; 嵌入绝缘体中的局部底栅，其中栅极的顶表面与绝缘体的表面基本共面; 底栅上的局部栅极电介质; 在所述局部栅极电介质的至少一部分上的碳基纳米结构材料，其中所述碳基纳米结构材料的一部分用作所述器件的通道; 并且导电源极和漏极接触到用作器件的源极和漏极区域的沟道的相对侧上的碳基纳米结构材料的一个或多个部分。

6. 发明申请

US20070141345A1 Transparent and electrically conductive single wall carbon nanotube films 有权
标题翻译：透明导电单壁碳纳米管薄膜
公开(公告)号：US20070141345A1
公开(公告)日：2007-06-21
申请号：US11583545
申请日：2006-10-19
申请人： Andrew Rinzler , Zhihong Chen
发明人： Andrew Rinzler , Zhihong Chen
IPC分类号： B32B9/00
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/174 , C01B2202/02 , D01F9/12 , H01L51/0048 , H01L51/0052 , H01L51/444 , Y10S977/742 , Y10T428/30
摘要： An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film comprises a plurality of interpenetrated single walled carbon nanotubes, wherein for a 100 nm film the film has sufficient interpenetration to provide a 25° C. sheet resistance of less than 200 ohm/sq. The film also provides at least 20% optical transmission throughout a wavelength range from 0.4 μm to 5 μm.
摘要翻译：光学透明且导电的单壁碳纳米管（SWNT）膜包括多个互穿的单壁碳纳米管，其中对于100nm膜，膜具有足够的相互渗透，以提供小于200欧姆/ 平方该薄膜还在0.4μm至5μm的波长范围内提供至少20％的光学透射。

7. 发明授权

US11440904B2 Substituted pyrimidines, pharmaceutical compositions and therapeutic methods thereof 有权
公开(公告)号：US11440904B2
公开(公告)日：2022-09-13
申请号：US16639972
申请日：2018-08-27
申请人： Zhihong Chen
发明人： Zhihong Chen
IPC分类号： C07D405/14 , C07D405/12 , C07D473/16 , C07D487/04 , C07D495/04
摘要： The invention provide novel pyrimidine derivatives and analogs having inhibitory activities towards certain tyrosine kinases, e.g., Bruton's tyrosine kinase (Btk) and/or Focal adhesion kinase (FAK), extracellular signal-regulated kinase (ERK), pharmaceutical compositions thereof, and methods of treatment, reduction or prevention of certain diseases or conditions mediated by such by tyrosine kinases, e.g., cancers, tumors, fibrosis, inflammatory diseases, autoimmune diseases, diabetes, or immunologically mediated diseases.

8. 发明授权

US09893212B2 Quantum capacitance graphene varactors and fabrication methods 有权
公开(公告)号：US09893212B2
公开(公告)日：2018-02-13
申请号：US13291596
申请日：2011-11-08
申请人： Zhihong Chen , Shu-Jen Han , Siyuranga O. Koswatta , Alberto Valdes Garcia
发明人： Zhihong Chen , Shu-Jen Han , Siyuranga O. Koswatta , Alberto Valdes Garcia
IPC分类号： H01L29/93 , H01L49/02 , B82Y10/00 , H01L29/16 , B82Y40/00
CPC分类号： H01L29/93 , B82Y10/00 , B82Y40/00 , H01L28/40 , H01L29/1606
摘要： A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.

9. 发明授权

US08895352B2 Method to improve nucleation of materials on graphene and carbon nanotubes 有权
标题翻译：改善石墨烯和碳纳米管材料成核的方法
公开(公告)号：US08895352B2
公开(公告)日：2014-11-25
申请号：US12476676
申请日：2009-06-02
申请人： Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
发明人： Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
IPC分类号： H01L51/40 , H01L21/02 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02532 , H01L21/02376 , H01L21/0262 , H01L21/02664 , H01L29/66742 , H01L29/78684 , H01L29/78687
摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.
摘要翻译：提供了在碳基材料上形成材料的薄涂层的技术。一方面，提供了在碳系材料的表面上形成薄涂层的方法。该方法包括以下步骤。在碳基材料的表面的至少一部分上沉积超薄硅成核层至约2埃至约10埃的厚度，以促进碳基材料表面上的涂层的成核。在超薄硅层上沉积厚度为约2埃至约100埃的薄涂层，以在碳基材料的表面上形成薄涂层。

10. 发明授权

US08816333B2 Method to improve nucleation of materials on graphene and carbon nanotubes 有权
公开(公告)号：US08816333B2
公开(公告)日：2014-08-26
申请号：US13482262
申请日：2012-05-29
申请人： Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
发明人： Katherina Babich , Alessandro Callegari , Zhihong Chen , Edward Kiewra , Yanning Sun
IPC分类号： H01L51/00
CPC分类号： H01L21/02532 , H01L21/02376 , H01L21/0262 , H01L21/02664 , H01L29/66742 , H01L29/78684 , H01L29/78687
摘要： Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.

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