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    • 1. 发明申请
    • CIRCUIT FOR PROTECTING AN ELECTRIC LOAD FROM OVERVOLTAGES
    • 用于保护过电压的电力负载的电路
    • US20130265683A1
    • 2013-10-10
    • US13994439
    • 2011-12-05
    • Michael Gueltig
    • Michael Gueltig
    • H02H3/20
    • H02H3/20G05F1/56
    • A circuit for protecting an electric load from overvoltages has an n-channel MOSFET (metal oxide semiconductor field-effect transistor) (T1) and a means for producing a reference voltage in order to achieve the most effective overvoltage protection possible by means of the cheapest and most compact circuit possible, wherein the means for producing a reference voltage is connected to the gate of the MOSFET (T1), wherein a supply voltage is applied to the circuit on the input side and wherein the gate is supplied with a voltage greater than the supply voltage using an auxiliary voltage source in such a way that the MOSFET (T1) is turned on.
    • 用于保护电负载免受过电压的电路具有n沟道MOSFET(金属氧化物半导体场效应晶体管)(T1)和用于产生参考电压的装置,以便通过最便宜的方式实现最有效的过电压保护 和最紧凑的电路,其中用于产生参考电压的装置连接到MOSFET(T1)的栅极,其中电源电压被施加到输入侧的电路,并且其中栅极被提供大于 使用辅助电压源的电源电压使MOSFET(T1)导通。
    • 3. 发明申请
    • CIRCUIT FOR PROTECTING AGAINST REVERSE POLARITY
    • 保护反向极地电路
    • US20130229738A1
    • 2013-09-05
    • US13883746
    • 2011-10-12
    • Michael Gueltig
    • Michael Gueltig
    • H01H83/08
    • H01H83/08H02H11/003H02J7/0034H03K2017/307
    • A circuit for protecting an electric load against reverse polarity is provided by using a MOSFET (metal oxide semiconductor field-effect transistor), wherein: the circuit is connected on the input side to a voltage supply and on the output side to the load; the source connection of the MOSFET is connected to the voltage supply; the drain connection of the MOSFET is connected to the load; the circuit has dynamic behavior similar to a diode and at the same time low power loss; the gate of the MOSFET is connected to the collector of a first bipolar transistor; the source of the MOSFET is connected to the emitter of the first bipolar transistor; the base of the first bipolar transistor is controlled by a control current; and the control current is derived from the voltage at the drain of the MOSFET.
    • 通过使用MOSFET(金属氧化物半导体场效应晶体管)提供用于防止反极性的电负载的电路,其中:电路在输入侧连接到电压源,并在输出侧连接到负载; MOSFET的源极连接到电源; MOSFET的漏极连接到负载; 该电路具有类似于二极管的动态行为,同时具有低功率损耗; MOSFET的栅极连接到第一双极晶体管的集电极; MOSFET的源极连接到第一双极晶体管的发射极; 第一双极晶体管的基极由控制电流控制; 并且控制电流源自MOSFET的漏极处的电压。
    • 6. 发明授权
    • Circuit for protecting against reverse polarity
    • 用于防止反极性的电路
    • US09324530B2
    • 2016-04-26
    • US13883746
    • 2011-10-12
    • Michael Gueltig
    • Michael Gueltig
    • H01H83/08H02H11/00H02J7/00H03K17/30
    • H01H83/08H02H11/003H02J7/0034H03K2017/307
    • A circuit for protecting an electric load against reverse polarity is provided by using a MOSFET (metal oxide semiconductor field-effect transistor), wherein: the circuit is connected on the input side to a voltage supply and on the output side to the load; the source connection of the MOSFET is connected to the voltage supply; the drain connection of the MOSFET is connected to the load; the circuit has dynamic behavior similar to a diode and at the same time low power loss; the gate of the MOSFET is connected to the collector of a first bipolar transistor; the source of the MOSFET is connected to the emitter of the first bipolar transistor; the base of the first bipolar transistor is controlled by a control current; and the control current is derived from the voltage at the drain of the MOSFET.
    • 通过使用MOSFET(金属氧化物半导体场效应晶体管)提供用于防止反极性的电负载的电路,其中:电路在输入侧连接到电压源,并在输出侧连接到负载; MOSFET的源极连接到电源; MOSFET的漏极连接到负载; 该电路具有类似于二极管的动态行为,同时具有低功率损耗; MOSFET的栅极连接到第一双极晶体管的集电极; MOSFET的源极连接到第一双极晶体管的发射极; 第一双极晶体管的基极由控制电流控制; 并且控制电流源自MOSFET的漏极处的电压。
    • 7. 发明授权
    • Arrangement for controlling light emitting diodes
    • 用于控制发光二极管的布置
    • US08310167B2
    • 2012-11-13
    • US12802723
    • 2010-06-11
    • Jan EllmanMichael GültigMartin Pados
    • Jan EllmanMichael GültigMartin Pados
    • H05B37/02
    • H05B33/0827
    • In a circuit arrangement for controlling light emitting diodes (LEDs), which are combined in an indicating table, including a voltage supply, at least one driver which is connected to the voltage supply and has current outputs by way of which current can be supplied to the LEDs as well as at least one control input via which the current being supplied to the LEDs is controllable, a control element is provided by which the number of the LEDs to which current has to be supplied at the same time can be determined and a signal indicative of the number determined can be supplied to the control input of the driver for assisting in controlling the power supply to the LEDs.
    • 在用于控制发光二极管(LED)的电路装置中,其组合在包括电压源的指示表中,至少一个连接到电压源的驱动器,并且具有电流输出,通过该电流可以将电流提供给 LED以及至少一个控制输入,通过该控制输入被提供给LED的电流是可控的,提供控制元件,通过该控制元件可以确定必须同时提供电流的LED的数量,并且 可以将指示确定的数量的信号提供给驾驶员的控制输入,以帮助控制对LED的电力供应。
    • 10. 发明授权
    • Power source with overload protection
    • 电源带过载保护
    • US09189006B2
    • 2015-11-17
    • US13885947
    • 2011-10-11
    • Michael Gueltig
    • Michael Gueltig
    • G05F3/02G05F3/08
    • G05F3/02G05F3/08
    • Power source, in particular for use in a databus in public means of transportation, wherein the power source has a first transistor (T2), and wherein in a normal operating mode of the power source the current (IA) which is conducted through the first transistor (T2) is determined by a first resistor (R3) at the emitter of the first transistor (T2), is characterized with respect to safe operation accompanied by the smallest possible space requirement and lowest possible manufacturing costs in that a temperature-dependent resistor (RV1) is thermally coupled to the first transistor (T2) and that the temperature-dependent transistor (RV1) is connected to the power source in such a way that when the temperature of the first transistor (T2) is rising the temperature-dependent resistor (RV1) influences the voltage across the first resistor (R3) and thereby brings about a reduction in the output current (IA) of the power source.
    • 电源,特别用于公共交通工具中的数据总线,其中电源具有第一晶体管(T2),并且其中在电源的正常工作模式中,通过第一晶体管(T2)传导的电流(IA) 晶体管(T2)由第一晶体管(T2)的发射极处的第一电阻器(R3)确定,其特征在于安全操作,伴随着尽可能小的空间需求和最低可能的制造成本,其中温度依赖电阻器 (RV1)热耦合到第一晶体管(T2),并且温度依赖晶体管(RV1)以这样的方式连接到电源,使得当第一晶体管(T2)的温度升高时,温度依赖 电阻器(RV1)影响第一电阻器(R3)两端的电压,从而导致电源的输出电流(IA)的减小。