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    • 6. 发明申请
    • SYSTEMS AND METHODS FOR CONTROLLING RELEASE OF TRANSFERABLE SEMICONDUCTOR STRUCTURES
    • 用于控制可转移半导体结构释放的系统和方法
    • US20160086855A1
    • 2016-03-24
    • US14947596
    • 2015-11-20
    • X-Celeprint Limited
    • Christopher BowerMatthew Meitl
    • H01L21/78H01L21/683
    • H01L21/7806B81C99/008H01L21/561H01L21/568H01L21/6835H01L21/6836H01L24/83H01L2221/68368
    • The disclosed technology relates generally to methods and systems for controlling the release of micro devices. Prior to transferring micro devices to a destination substrate, a native substrate is formed with micro devices thereon. The micro devices can be distributed over the native substrate and spatially separated from each other by an anchor structure. The anchors are physically connected/secured to the native substrate. Tethers physically secure each micro device to one or more anchors, thereby suspending the micro device above the native substrate. In certain embodiments, single tether designs are used to control the relaxation of built-in stress in releasable structures on a substrate, such as Si (1 0 0). Single tether designs offer, among other things, the added benefit of easier break upon retrieval from native substrate in micro assembly processes. In certain embodiments, narrow tether designs are used to avoid pinning of the undercut etch front.
    • 所公开的技术一般涉及用于控制微器件释放的方法和系统。 在将微器件转移到目标衬底之前,在其上形成有微器件的天然衬底。 微器件可以分布在天然衬底上并且通过锚结构在空间上彼此分离。 锚固体物理地连接/固定到天然基底。 系带将每个微型装置物理地固定到一个或多个锚固件上,从而将微型装置悬挂在天然基底之上。 在某些实施例中,使用单系链设计来控制衬底上的可释放结构中的内在应力的松弛,例如Si(110)。 除了别的以外,单系链设计还提供了在微装配过程中从原生衬底检索更容易断裂的附加益处。 在某些实施例中,使用窄的绳索设计来避免底切蚀刻前端的钉扎。
    • 10. 发明申请
    • METHOD FOR PRODUCING A THIN SINGLE CRYSTAL SILICON HAVING LARGE SURFACE AREA
    • 生产具有大面积面积的单晶硅的方法
    • US20130143407A1
    • 2013-06-06
    • US13414355
    • 2012-03-07
    • CHING-FUH LINTZU-CHING LINSHU-JIA SYU
    • CHING-FUH LINTZU-CHING LINSHU-JIA SYU
    • H01L21/311B82Y40/00
    • B81C99/008B81B2207/056B81C1/0038B81C2201/0194
    • The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.
    • 本发明涉及一种具有大表面积的薄单晶硅的制造方法,特别涉及在硅衬底(或晶片)上制造硅微结构和纳米结构的方法,并将硅微结构和纳米结构从 硅衬底(或晶片)。 在该方法中,通过在硅晶片上沉积金属催化剂,垂直蚀刻衬底,横向蚀刻衬底的步骤,简单地从衬底中提取和转移硅微结构和纳米结构的薄单晶硅。 然后,处理衬底的表面,例如平坦化衬底的表面,以再循环衬底以重复制造薄的单晶硅。 因此,可以充分利用基板,可以实现成本降低的目的,并且可以提高应用。