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1. 发明授权

US10895011B2 Modular thin film deposition system 有权
公开(公告)号：US10895011B2
公开(公告)日：2021-01-19
申请号：US15458235
申请日：2017-03-14
申请人： Eastman Kodak Company
发明人： Todd Mathew Spath , Carolyn Rae Ellinger , Shelby Forrester Nelson , Lee William Tutt
IPC分类号： C23C16/455 , C23C16/44 , C23C16/46 , C23C16/52 , C23C16/458
摘要： A modular thin film deposition system, includes a machine base, a deposition head for depositing a thin film of material onto a process surface of a substrate, a motion actuator including a fixed portion and a moveable portion, and one or more interchangeable substrate positioner modules adapted to mount on the moveable portion of the motion actuator. The interchangeable substrate positioner modules include kinematic mounting features that engage with corresponding kinematic mounting features on the moveable portion of the motion actuator. The motion actuator moves the interchangeable substrate positioner in a motion direction, thereby moving the substrate in an in-track direction in a plane parallel to the output face of the deposition head during deposition of the thin film of material onto the process surface of the substrate.

2. 发明申请

US20180265982A1 DEPOSITION SYSTEM WITH MOVEABLE-POSITION WEB GUIDES 审中-公开
公开(公告)号：US20180265982A1
公开(公告)日：2018-09-20
申请号：US15458270
申请日：2017-03-14
申请人： Eastman Kodak Company
发明人： Todd Mathew Spath , Carolyn Rae Ellinger
IPC分类号： C23C16/455 , C23C16/54 , C23C16/458
CPC分类号： C23C16/45551 , B65H2301/51145 , C23C16/458 , C23C16/545
摘要： A thin film deposition system includes a web guide system having a plurality of web guides defining a web transport path for the web of substrate. The web guide system includes a moveable portion including first and second moveable-position web guides. A web transport control system advances the web of substrate along the web transport path at a web advance velocity. A deposition head is located along the web transport path between the first and second moveable-position web guides. A motion actuator system synchronously moves a position of the first and second moveable-position web guides such that they move forward and backward according to a defined oscillating motion pattern while maintaining a constant distance between the first and second moveable-position web guides, thereby causing a portion of the web of media adjacent to the deposition head to move forward and backward in an in-track direction.

3. 发明申请

US20180265977A1 DEPOSITION SYSTEM WITH VACUUM PRE-LOADED DEPOSITION HEAD 审中-公开
公开(公告)号：US20180265977A1
公开(公告)日：2018-09-20
申请号：US15458250
申请日：2017-03-14
申请人： Eastman Kodak Company
发明人： Todd Mathew Spath , Carolyn Rae Ellinger
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45544 , C23C16/403 , C23C16/407 , C23C16/4412 , C23C16/45519 , C23C16/45527 , C23C16/45551 , C23C16/45574 , C23C16/45595 , C23C16/4583 , C23C16/545
摘要： A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

4. 发明授权

US09214560B2 VTFT including overlapping electrodes 有权
标题翻译： VTFT包括重叠电极
公开(公告)号：US09214560B2
公开(公告)日：2015-12-15
申请号：US14198643
申请日：2014-03-06
申请人： Eastman Kodak Company
发明人： Shelby Forrester Nelson , Carolyn Rae Ellinger , Lee William Tutt
IPC分类号： H01L29/786 , H01L29/423 , H01L29/10
CPC分类号： H01L29/78642 , H01L29/1037 , H01L29/42384 , H01L29/7869
摘要： A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.
摘要翻译：垂直晶体管包括基板和具有顶表面并且包括折入轮廓的导电栅极结构。维持凹凸轮廓的保形电绝缘层与导电栅极结构和衬底的至少一部分接触。保持凹凸轮廓的保形半导体层与保形电绝缘层接触。延伸到凹陷轮廓中的电极与半导体层的第一部分接触。另一个电极与电极垂直间隔开，与延伸到凹陷轮廓中的电极的一部分重叠，与导电栅极结构的顶表面上的半导体材料层的第二部分接触，并且位于可重入的资料

5. 发明申请

US20190181102A1 DECODING INFORMATION EMBEDDED IN AN ELECTRONIC ELEMENT 审中-公开
公开(公告)号：US20190181102A1
公开(公告)日：2019-06-13
申请号：US15838735
申请日：2017-12-12
申请人： Eastman Kodak Company
发明人： Carolyn Rae Ellinger , William Yurich Fowlkes , Kevin Edward Spaulding
IPC分类号： H01L23/00 , G06K7/14 , G06F17/30 , G06K7/10
CPC分类号： H01L23/573 , G06F16/9554 , G06K7/10821 , G06K7/1439 , H01L28/40 , H01L29/786
摘要： A pattern of information is detected in a thin-film electrical element including a plurality of thin-film layers on a substrate, the plurality of thin-film layers overlapping in an encoding region to form an optical layer structure. At least one of the thin-film layers in the optical layer structure includes an embedded information-encoding pattern. The thin-film electrical element is illuminated with an incident light beam from a light source thereby producing an optically-detectable interference image including the embedded pattern of information. An image capture system is used to capture an image of the optically-detectable interference image, and a data processing system is used to analyze the captured image to detect the embedded pattern of information. One or more actions are initiated in response to the detected pattern of information.

6. 发明授权

US09859308B1 Multiple TFTs on common vertical support element 有权
公开(公告)号：US09859308B1
公开(公告)日：2018-01-02
申请号：US15223060
申请日：2016-07-29
申请人： Eastman Kodak Company
发明人： Carolyn Rae Ellinger , Shelby Forrester Nelson
IPC分类号： H01L29/06 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1251 , H01L21/0228 , H01L21/0262 , H01L27/1218 , H01L27/1225 , H01L29/786 , H01L29/78603 , H01L29/78642
摘要： An electronic element includes a substrate, and a vertical-support-element located on the substrate, the vertical-support-element extending away from the substrate and having a perimeter over the substrate, wherein the vertical-support-element has a reentrant profile around at least a portion of the perimeter. Three or more vertical transistors are positioned around the perimeter of the vertical-support-element, each of the transistors having a semiconductor channel being located in a corresponding region of the reentrant profile.

7. 发明授权

US09620501B1 Enhancement-depletion mode circuit element with differential passivation 有权
公开(公告)号：US09620501B1
公开(公告)日：2017-04-11
申请号：US15055877
申请日：2016-02-29
申请人： Eastman Kodak Company
发明人： Carolyn Rae Ellinger , Shelby Forrester Nelson
IPC分类号： H01L29/786 , H01L27/088 , H01L29/22 , H01L27/12
CPC分类号： H01L27/0883 , H01L27/1225 , H01L27/1251 , H01L29/22 , H01L29/78606 , H01L29/78642 , H01L29/7869 , H01L29/78696
摘要： An enhancement-depletion circuit element includes a depletion-mode load transistor and an enhancement-mode drive transistor formed from the common elements of: a first patterned conductive layer including a load gate electrode and a drive gate electrode; a patterned inorganic dielectric stack including a load gate dielectric and a drive gate dielectric; a patterned inorganic semiconductor layer including a load semiconductor region and a drive semiconductor region; a second patterned conductive layer including a load source, a load drain, a drive source and a drive drain; and a patterned differential passivation structure having a patterned polymer dielectric layer and a patterned conformal inorganic dielectric layer. The depletion-mode load transistor has a load back-channel in contact with the patterned conformal inorganic dielectric layer. The enhancement-mode drive transistor has a drive back-channel in contact with the patterned polymer dielectric layer.

8. 发明申请

US20160365370A1 DUAL-GATE VTFT 审中-公开
标题翻译：双门VTFT
公开(公告)号：US20160365370A1
公开(公告)日：2016-12-15
申请号：US14737577
申请日：2015-06-12
申请人： Eastman Kodak Company
发明人： Carolyn Rae Ellinger , Shelby Forrester Nelson
IPC分类号： H01L27/12 , H01L29/423 , H01L29/786
CPC分类号： H01L27/1251 , H01L29/42384 , H01L29/78642 , H01L29/78645 , H01L29/7869 , H01L29/78696
摘要： An electronic device includes an electrically conductive gate structure extending away from a substrate to a top. The top extends beyond an edge to define a reentrant profile. A first conformal dielectric layer is in contact with the gate structure and the substrate. A conformal semiconductor layer is in contact with the conformal dielectric layer. A first electrode is located in contact with a first portion of the semiconductor layer over the top of the gate structure. A second electrode, adjacent to the edge, is located in contact with a second portion of the semiconductor layer, over the substrate and not over the top of the gate structure. A second conformal dielectric layer is on the semiconductor layer in the reentrant profile. A conformal conductive top-gate is on the conformal dielectric layer in the reentrant profile. The first and second electrodes define a semiconductor channel of a dual-gate transistor.
摘要翻译：电子器件包括从衬底延伸到顶部的导电栅极结构。顶部延伸超过边缘以定义可重入的轮廓。第一共形介电层与栅极结构和衬底接触。保形半导体层与保形电介质层接触。第一电极与栅极结构的顶部上的半导体层的第一部分接触。邻近边缘的第二电极定位成与半导体层的第二部分接触，并且不超过栅极结构的顶部。第二共形介电层位于半导体层中的折入轮廓中。共形导电顶栅位于折入轮廓中的保形介质层上。第一和第二电极限定双栅极晶体管的半导体沟道。

9. 发明授权

US09331205B2 VTFT with post, cap, and aligned gate 有权
标题翻译： VTFT与柱，盖和对齐门
公开(公告)号：US09331205B2
公开(公告)日：2016-05-03
申请号：US14198633
申请日：2014-03-06
申请人： Eastman Kodak Company
发明人： Shelby Forrester Nelson , Carolyn Rae Ellinger
IPC分类号： H01L29/786 , H01L29/423 , H01L29/10
CPC分类号： H01L29/78642 , H01L29/1037 , H01L29/42384 , H01L29/7869
摘要： A thin film transistor includes a post on a substrate. The post has a height dimension extending away from the substrate to a top, and an edge along the height dimension. A cap covers the top of the post and extends to a distance beyond the edge of the post to define a reentrant profile. A conformal conductive gate layer is located on the edge of the post in the reentrant profile and not over the cap, and includes a portion that extends along the substrate. A conformal insulating layer is on the gate layer in the reentrant profile. A conformal semiconductor layer is on the insulating layer in the reentrant profile. First and second electrodes are located in contact with a first portion of the semiconductor layer over the cap and a second portion of the semiconductor layer not over the post, respectively.
摘要翻译：薄膜晶体管包括在基板上的柱。该柱具有从基板延伸到顶部的高度尺寸和沿着高度尺寸的边缘。帽盖覆盖柱的顶部并且延伸到距离柱的边缘的距离以定义可重入的轮廓。共形导电栅极层位于折返轮廓中的柱的边缘上并且不在盖上，并且包括沿着衬底延伸的部分。保形绝缘层位于折返轮廓中的栅极层上。保形半导体层位于凹凸轮廓中的绝缘层上。第一和第二电极分别与帽上的半导体层的第一部分接触并且半导体层的第二部分分别不在柱上。

10. 发明授权

US11535935B2 Deposition system with vacuum pre-loaded deposition head 有权
公开(公告)号：US11535935B2
公开(公告)日：2022-12-27
申请号：US16903505
申请日：2020-06-17
申请人： Eastman Kodak Company
发明人： Todd Mathew Spath , Carolyn Rae Ellinger
IPC分类号： C23C16/455 , C23C16/54 , C23C16/458 , C23C16/44 , C23C16/40
摘要： A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

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