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1. 发明申请

US20180087181A1 EXPANSION BELLOWS WITH SELF-ALIGNED GUIDE RODS 审中-公开
公开(公告)号：US20180087181A1
公开(公告)日：2018-03-29
申请号：US15719066
申请日：2017-09-28
申请人： Corner Star Limited
发明人： Jia Wang , Richard George Schrenker
IPC分类号： C30B15/30 , C30B29/06
CPC分类号： C30B15/30 , C30B29/06 , C30B35/005 , F16J3/047 , F16J3/048
摘要： A bellows system includes a first bellows segment having a first end and a second end opposite the first end. The first bellows segment is configured to elastically compress and expand. A first plate is coupled to the second end of the first bellows segment. The bellows system includes a second bellows segment having a third end and a fourth end opposed the third end. The second bellows segment is configured to elastically compress and expand. The third end of the second bellows segment is coupled to the first plate opposite the first bellows segment. A second plate is coupled to the fourth end of the second bellows segment. A plurality of guide rods are coupled to the second plate and extend through the first plate. The first plate is free to slide along the plurality of guide rods.

2. 发明申请

US20180087180A1 TELESCOPING EXPANSION BELLOWS 审中-公开
公开(公告)号：US20180087180A1
公开(公告)日：2018-03-29
申请号：US15719000
申请日：2017-09-28
申请人： Corner Star Limited
发明人： Jia Wang
IPC分类号： C30B15/30 , C30B29/06
CPC分类号： C30B15/30 , C30B29/06 , C30B35/005 , F16J3/047 , F16J3/048
摘要： A bellows system includes a first bellows segment having a first end and a second end, the first bellows segment configured to elastically compress and expand. A first plate is coupled to the second end of the first bellows segment and a first sleeve is concentric with the first bellows segment, the first bellows segment disposed within the first sleeve. A second bellows segment has a third end and a fourth end. The second bellows segment is configured to elastically compress and expand, and the third end of the second bellows segment is coupled to the first plate. A second sleeve is coupled to the first plate. The second sleeve is concentric with the second bellows segment and the first sleeve, and the second bellows segment is disposed within the second sleeve. The second sleeve is configured to travel within the first sleeve.

3. 发明授权

US09243330B2 Apparatus and method for high-throughput atomic layer deposition 有权
标题翻译：用于高通量原子层沉积的装置和方法
公开(公告)号：US09243330B2
公开(公告)日：2016-01-26
申请号：US12993562
申请日：2009-05-20
申请人： Ernst H. A. Granneman , Sebastiaan E. van Nooten
发明人： Ernst H. A. Granneman , Sebastiaan E. van Nooten
IPC分类号： C30B25/14 , C30B29/20 , C30B25/00 , C23C16/455 , C23C16/54 , H01L21/677 , C30B35/00
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/458 , C23C16/54 , C30B25/14 , C30B29/20 , C30B35/005 , H01L21/67784
摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.
摘要翻译：用于以连续方式沉积膜的原子层沉积装置。该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。这些壁是相互平行的，并且允许在其间容纳平坦的基底。该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，吹扫气体源，第二前体气体源和吹扫气体源，以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

4. 发明申请

US20150337460A1 SUBSTRATE-PROCESSING DEVICE 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20150337460A1
公开(公告)日：2015-11-26
申请号：US14652986
申请日：2014-01-09
申请人： EUGENE TECHNOLOGY CO., LTD.
发明人： Il-Kwang YANG , Byoung-Gyu SONG , Kyong-Hun KIM , Yong-Ki KIM , Yang-Sik SHIN
IPC分类号： C30B35/00
CPC分类号： C30B35/005 , H01L21/67109 , H01L21/67757
摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber in which a process with respect to a substrate is performed, a preliminary chamber connected to the process chamber, the preliminary chamber having a passage through which the substrate is accessed, a blocking plate partitioning the inside of the preliminary chamber into a holding region and a transfer region, a substrate holder on which at least one substrate is loaded, the substrate holder being switchable into a loading position in which the substrate holder is disposed on the holding region and a process position in which the substrate holder is disposed on the process chamber, a substrate transfer unit transferring the substrate holder from the loading position to the process position, the substrate transfer unit including a transfer arm connected to the substrate holder and a driver operating the transfer arm, a gas supply port supplying an inert gas into the preliminary chamber, and a lower exhaust port connected to the transfer region and disposed above the gas supply port to exhaust the inside of the preliminary chamber. The lower exhaust port is disposed closer to a bottom surface of the preliminary chamber than a top surface of the preliminary chamber.
摘要翻译：提供了一种基板处理装置。基板处理装置包括处理室，在该处理室中进行相对于基板的处理，与处理室连接的预备室，预备室具有通过基板被通过的通道，分隔内部的阻挡板初步室进入保持区域和转移区域，其上装载有至少一个基板的基板保持器，所述基板保持器可切换到其中基板保持器设置在保持区域上的装载位置和处理位置，衬底保持器设置在处理室上，衬底传送单元将衬底保持器从装载位置传送到处理位置，衬底传送单元包括连接到衬底保持器的传送臂和操作传送臂的驱动器，气体供应向预备室供应惰性气体的端口，以及连接到t的下排气口他转移区域并且设置在气体供应口上方以排出预备室的内部。下排气口比预备室的上表面更靠近预备室的底面设置。

5. 发明申请

US20120083060A1 INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS 审中-公开
标题翻译：集成MOCVD和HVPE反应器与其他过程池的集成
公开(公告)号：US20120083060A1
公开(公告)日：2012-04-05
申请号：US13246679
申请日：2011-09-27
申请人： Jie Cui , David Bour , Liang-Yuh Chen
发明人： Jie Cui , David Bour , Liang-Yuh Chen
IPC分类号： H01L33/04 , C23C16/30 , C30B25/02 , C23C16/44
CPC分类号： H01L33/42 , C30B25/02 , C30B29/406 , C30B35/005 , H01L21/67109 , H01L21/67115 , H01L21/67207 , H01L21/68764 , H01L21/68771 , H01L2933/0016
摘要： The integration of cluster metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) reactors with other process chambers is described. For example, a method of fabricating a light-emitting diode (LED) structure described herein includes forming, in a first chamber of a cluster tool, a P-type group III-V material layer above a substrate. Without removing the substrate from the cluster tool a metal contact layer is formed directly on the P-type group III-V material layer in a second chamber of the cluster tool.
摘要翻译：描述了集群金属 - 有机化学气相沉积（MOCVD）和氢化物气相外延（HVPE）反应器与其他处理室的集成。例如，制造本文所述的发光二极管（LED）结构的方法包括在簇工具的第一室中形成在基板上方的P型III-V族材料层。在不从簇工具移除衬底的情况下，在簇工具的第二室中，直接在P型III-V族材料层上形成金属接触层。

6. 发明申请

US20120060748A1 Method and apparatus for continuous crystal growth 有权
标题翻译：连续晶体生长的方法和装置
公开(公告)号：US20120060748A1
公开(公告)日：2012-03-15
申请号：US12878326
申请日：2010-09-09
申请人： James L. Corbeil , Troy Marlar , Piotr Szupryczynski
发明人： James L. Corbeil , Troy Marlar , Piotr Szupryczynski
IPC分类号： C30B15/30 , C30B15/00
CPC分类号： C30B15/12 , C30B15/02 , C30B33/02 , C30B35/005
摘要： A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.
摘要翻译： Czochralski（“CZ”）单晶生长工艺系统在单个热循环期间在室内炉中连续生长晶体。成品坯料从炉室转移，而不需要将炉子冷却到相邻的冷却室中以进行受控冷却。控制冷却优选通过沿着具有逐渐降低的温度的路径输送颗粒来实现。为了使单炉炉热循环中的晶体坯产量最大化，坩埚组件可以用晶体生长骨料再充电，和/或可在晶体生长过程中排出炉渣，而不打开炉子。

7. 发明申请

US20120003004A1 Center-referenced Photoconductor Bearing Plate and Assembly for Electro-photographic Cartridge 有权
标题翻译：中心参考光电导体轴承板和电子照相墨盒组件
公开(公告)号：US20120003004A1
公开(公告)日：2012-01-05
申请号：US12827775
申请日：2010-06-30
申请人： Jarrett Clark Gayne , David Keith Schattner
发明人： Jarrett Clark Gayne , David Keith Schattner
IPC分类号： G03G15/00
CPC分类号： C23C16/4412 , C23C16/45561 , C23C16/52 , C23C16/54 , C30B25/02 , C30B35/005 , G03G15/751 , G03G21/0029 , G03G21/1647 , G03G21/1661 , G03G21/1671 , G03G21/169 , G03G21/1814
摘要： A bearing plate for rotably supporting a photoconductor drum having a center shaft according to one exemplary embodiment includes a body having a first side, a second side, and an edge surface between the first and second sides. A center hole extends through the body for rotably receiving an end of the center shaft and positionally referencing an outer surface of the photoconductor drum to a center axis of the center hole. A support arm extends from the body in a non-radial direction. The support arm has a mounting surface for receiving an additional component positionally referenced to the center axis. An assembly for use in an image forming device according to one embodiment includes a photoconductor drum having a center shaft and a pair of substantially identical bearing plates mounted on opposite ends of the photoconductor drum. The bearing plates are translated from one another and have identical orientations.
摘要翻译：根据一个示例性实施例的用于可旋转地支撑具有中心轴的感光鼓的支承板包括具有第一侧面，第二侧面和第一侧面和第二侧面之间的边缘表面的主体。中心孔延伸穿过主体，用于可转动地容纳中心轴的端部，并将感光鼓的外表面与中心孔的中心轴线定位。支撑臂在非径向方向上从主体延伸。支撑臂具有用于接收位置地参考中心轴线的附加部件的安装表面。根据一个实施例的用于图像形成装置的组件包括具有安装在感光鼓的相对端上的中心轴和一对基本相同的支承板的感光鼓。承载板彼此平移并具有相同的取向。

8. 发明申请

US20110124199A1 APPARATUS AND METHOD FOR HIGH-THROUGHPUT ATOMIC LAYER DEPOSITION 有权
标题翻译：用于高通量原子层沉积的装置和方法
公开(公告)号：US20110124199A1
公开(公告)日：2011-05-26
申请号：US12993562
申请日：2009-05-20
申请人： Ernst H. A. Granneman , Sebastiaan E. van Nooten
发明人： Ernst H. A. Granneman , Sebastiaan E. van Nooten
IPC分类号： H01L21/18 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/458 , C23C16/54 , C30B25/14 , C30B29/20 , C30B35/005 , H01L21/67784
摘要： Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purgegas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.
摘要翻译：用于以连续方式沉积膜的原子层沉积装置。该装置包括一个在输送方向上延伸并由至少第一和第二壁限定的加工隧道。这些壁是相互平行的，并且允许在其间容纳平坦的基底。该装置还包括用于通过隧道移动一列衬底或带状连续衬底的传送系统。至少过程隧道的第一壁设置有多个气体注入通道，从输送方向看，连续连接到第一前体气体源，净化气体源，第二前体气体源和吹扫气体源以便产生在使用中的隧道段，其包括分别包含第一前体气体，吹扫气体，第二前体气体和吹扫气体的连续区域。

9. 发明申请

US20110099952A1 Crane device for wrapped quartz glass crucible and method of packing wrapped quartz glass crucible using the device 审中-公开
标题翻译：用于包装石英玻璃坩埚的起重设备和使用该装置的包装石英玻璃坩埚的方法
公开(公告)号：US20110099952A1
公开(公告)日：2011-05-05
申请号：US12804456
申请日：2010-07-21
申请人： Manabu Shonai , Taira Sato , Minoru Shirakawa , Shuichi Ikehata , Hiroshi Takahashi
发明人： Manabu Shonai , Taira Sato , Minoru Shirakawa , Shuichi Ikehata , Hiroshi Takahashi
IPC分类号： B65B1/04 , B66C1/42 , B66C19/00
CPC分类号： B65B5/04 , B65B35/16 , C30B35/002 , C30B35/005
摘要： An object of the present invention is to provide a crane device suitable for handling a wrapped crucible, which crane device is capable of realizing mechanical handling of the wrapped crucible by way of a machine without manual work. In view of this, the present invention provides a crane device adapted to be capable of making reciprocal movements along a path between a position above a lifting-up point where a wrapped quartz glass crucible is placed and another position above a putting-down point where a packing container is placed and ascending to/descending from the path at each of the lifting-up point and the putting-down point, the crane device having: four arms extending in the ascend-descend direction and disposed at apexes of a quadrangle such that two arms paired on a diagonal line of the quadrangle are movable to advance to/separate from each other; and a claw provided at a rear end of each arm to extend in the advancing direction of the arm.
摘要翻译：本发明的目的是提供一种适于处理包装的坩埚的起重机装置，该起重机装置能够通过机器通过机器实现机械处理，而无需手动工作。鉴于此，本发明提供了一种起重机装置，其适于能够沿着放置有包裹的石英玻璃坩埚的提升点之间的位置和放置点之间的另一位置之间的路径进行往复运动，一个包装容器被放置并且从每个提升点和下降点处的路径上升/下降，起重机装置具有：沿上下方向延伸的四个臂，并且设置在四边形的顶点配对在四边形的对角线上的两个臂可移动以彼此前进/分离; 以及设置在每个臂的后端以在臂的前进方向上延伸的爪。

10. 发明授权

US07547358B1 System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism 有权
标题翻译：使用液体 - 溶剂碳转移机制的金刚石沉积的系统和方法
公开(公告)号：US07547358B1
公开(公告)日：2009-06-16
申请号：US12163980
申请日：2008-06-27
申请人： Zalman M. Shapiro
发明人： Zalman M. Shapiro
IPC分类号： C30B29/04
CPC分类号： C30B9/10 , C30B29/04 , C30B35/00 , C30B35/005 , Y10T117/10 , Y10T117/1024
摘要： A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps).
摘要翻译：一种用于在低温和大气压和较低压力下通过外延沉积从金刚石晶种生长金刚石晶体的系统和方法。溶剂循环（通过热对流和/或泵送），其中碳被加入到热腿中，转移到冷腿，在一些实施方案中，通过循环溶剂逐渐降低温度和碳浓度的范围，以及沉积在逐渐降低的温度下的金刚石晶种上，因为当金刚石沉积时，碳浓度降低并且降低温度以保持溶剂变得过饱和。溶剂包括在较低温度下具有低熔点和转移碳的金属或化合物。控制器从位于系统中的各种传感器接收参数信号，处理这些信号，并通过向多个控制装置（例如，阀，加热器，冷却器，泵）输出必要的控制信号来优化金刚石沉积。

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