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1. 发明申请

US20180277449A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSPECTION DEVICE OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20180277449A1
公开(公告)日：2018-09-27
申请号：US15892841
申请日：2018-02-09
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Yu Muto
IPC分类号： H01L21/66 , H01L21/48 , H01L23/498 , H01L23/00 , G01R1/04
CPC分类号： H01L22/14 , G01R1/0466 , G01R1/0483 , G01R27/205 , G01R31/045 , H01L21/4853 , H01L22/32 , H01L23/49816 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/92 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/92125 , H01L2924/1432 , H01L2924/1434 , H01L2924/15311 , H01L2924/18161 , H01L2924/19041 , H01L2924/19105 , H01L2924/00
摘要： A subject matter of this invention is that a manufacturing yield of a semiconductor device is improved.A resistance value between a pogo pin and a test pin is measured by bringing a plurality of pogo pins of a socket mounted over a test board included in an inspection device of a semiconductor device into contact with a plurality of solder balls, respectively, and bringing the test pin provided in the socket into contact with a first solder ball of a plurality of solder balls at a position different from a position where the pogo pin is brought into contact with the first solder ball. Thereby, a coupling failure between the pogo pin and the first solder ball is detected, so that a conductive state is inspected.

2. 发明申请

US20180128868A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180128868A1
公开(公告)日：2018-05-10
申请号：US15802625
申请日：2017-11-03
申请人： Rohm Co., Ltd.
发明人： Satoshi MAEJIMA , Junichi HAGINO
IPC分类号： G01R31/02 , G01R27/20 , H01H83/04 , H01L27/118 , H03K19/173 , H03K17/687
CPC分类号： G01R31/025 , G01R27/205 , H01H83/04 , H01L27/11803 , H03K17/0822 , H03K17/687 , H03K19/1733
摘要： A semiconductor device includes an external terminal, a switching output stage that performs switching drive of a terminal voltage at the external terminal, an output control unit arranged to generate a drive signal for the switching output stage according to an input pulse signal, a counter arranged to count the number of pulses of the input pulse signal so as to generate a mask signal, a logical gate arranged to mask the input pulse signal according to the mask signal, and a comparator arranged to compare the terminal voltage with a predetermined threshold value voltage so as to generate a reset signal of the counter.

3. 发明授权

US09910092B2 Switch deterioration detection device and method 有权
公开(公告)号：US09910092B2
公开(公告)日：2018-03-06
申请号：US15308470
申请日：2015-07-29
申请人： LG CHEM, LTD.
发明人： Jaedong Park , Sang Hoon Lee , Younghwan Kim , Chang Hyun Sung
IPC分类号： G01R31/327
CPC分类号： G01R31/327 , G01R27/14 , G01R27/205 , G01R31/006 , G01R31/3277
摘要： Provided are switch deterioration detection device and method. More particularly, the switch deterioration detection device includes: a resistor serially connected with a battery in which charge and discharge are controlled through a switch; a first differential amplifier configured to amplify a voltage difference between both ends of the switch to output the amplified voltage difference as a first output voltage; a second differential amplifier configured to amplify a voltage difference between both ends of the resistor to output the amplified voltage difference as a second output voltage; a comparator configured to compare levels between the second and second output voltages; and a controller configured to determine whether the switch deteriorates based on the compared result of the comparator.

4. 发明授权

US09880229B2 Measurement of bonding resistances 有权
公开(公告)号：US09880229B2
公开(公告)日：2018-01-30
申请号：US14585479
申请日：2014-12-30
申请人： CONTINENTAL AUTOMOTIVE FRANCE , CONTINENTAL AUTOMOTIVE GmbH
发明人： Angelo Pasqualetto , Jean-Marie Quintin
IPC分类号： G01R27/02 , G01R31/40 , G01R27/20
CPC分类号： G01R31/40 , G01R27/205
摘要： Disclosed is a method for determining a contact resistance of an H bridge including four transistors, each transistor having a point of connection to two neighboring transistors, a bond being produced in each case between a connection point lying between two transistors and an access terminal. The method includes: acting on the open/closed state of the transistors of the bridge so that the transistors on either side of the connection point corresponding to the access terminal are open; applying a determined voltage to an access terminal; determining the current flowing through the bond corresponding to the access terminal; grounding an access terminal neighboring the access terminal if this neighboring access terminal is not already connected to ground; and measuring the voltage at the other neighboring access terminal.

5. 发明申请

US20180025950A1 TOP CONTACT RESISTANCE MEASUREMENT IN VERTICAL FETS 有权
公开(公告)号：US20180025950A1
公开(公告)日：2018-01-25
申请号：US15498900
申请日：2017-04-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Kangguo Cheng , Zuoguang Liu , Xin Miao , Wenyu Xu , Chen Zhang
IPC分类号： H01L21/66 , H01L21/768 , H01L29/66
CPC分类号： H01L22/32 , G01R27/205 , G01R31/2621 , G01R31/2813 , G01R31/2856 , H01L21/76838 , H01L21/823487 , H01L21/823821 , H01L21/823885 , H01L21/845 , H01L22/14 , H01L22/34 , H01L27/0629 , H01L29/42392 , H01L29/6609 , H01L29/66136 , H01L29/66204 , H01L29/66666 , H01L29/66712 , H01L29/66795 , H01L29/7788 , H01L29/7802 , H01L29/7827 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： A test device includes a diode junction layer having a first dopant conductivity region and a second dopant conductivity region formed within the diode junction layer on opposite sides of a diode junction. A first portion of vertical transistors is formed over the first dopant conductivity region as a device under test, and a second portion of vertical transistors is formed over the second dopant conductivity region. A common source/drain region is formed over the first and second portions of vertical transistors. Current through the first portion of vertical transistors permits measurement of a resistance at a probe contact connected to the common source/drain region.

6. 发明授权

US09702931B2 Test circuit and method for semiconductor device 有权
公开(公告)号：US09702931B2
公开(公告)日：2017-07-11
申请号：US14060198
申请日：2013-10-22
申请人： SK hynix Inc.
发明人： Dong-Uk Lee
IPC分类号： G01R31/317 , G11C29/50 , G11C29/02 , G01R27/20 , G01R31/3185 , H01L21/66
CPC分类号： G01R31/31717 , G01R27/205 , G01R31/318513 , G11C29/025 , G11C29/50008 , H01L22/34
摘要： A semiconductor device includes a first die, a second die coupled to the first die through a Through-Silicon-Via (TSV), and a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.

7. 发明授权

US09696357B2 Element resistance measurement in an electricity meter 有权
公开(公告)号：US09696357B2
公开(公告)日：2017-07-04
申请号：US13931349
申请日：2013-06-28
申请人： Landis+Gyr, Inc.
发明人： John T. Voisine
IPC分类号： G01R27/14 , G01R31/327 , G01R27/20
CPC分类号： G01R27/14 , G01R27/205 , G01R31/3274
摘要： A method measures a resistance of an element that is operably coupled to receive an AC line voltage. The method includes obtaining a first voltage measurement value V1A from a first side of the element at a first time, and obtaining a second voltage measurement value V2A from a second side of the element at the first time. The method also includes obtaining a first current measurement value IA through the element at the first time, and obtaining a second current measurement value IB through the element at the second time. The method further includes obtaining a third voltage measurement value V1B from the first side of the element at a second time, and obtaining a fourth voltage measurement value V2B from the second side of the element at the second time. The processing device determines the resistance at least in part based on the values V1A, V2A, V1B, V2B, IA and IB. The determination based on an adjusted difference of V2B and V2A.

8. 发明申请

US20170110869A1 ELECTRICAL MEASURING DEVICE FOR MEASURING THE RESISTANCE OF AN EARTH CONNECTION OF AN ELECTRICAL FACILITY 审中-公开
公开(公告)号：US20170110869A1
公开(公告)日：2017-04-20
申请号：US15110588
申请日：2015-01-08
申请人： ELECTRICITE DE FRANCE
发明人： Jean-Luc Bargues
IPC分类号： H02H1/00 , G01R19/02 , H02H5/10 , G01R27/20
CPC分类号： H02H1/003 , G01R19/02 , G01R27/20 , G01R27/205 , H02H5/105
摘要： An electrical measuring device for measuring the resistance of an earth connection of an electrical facility. The device comprises at least: a first link to an earth connection of the masses of an electrical facility; a second link to a neutral conductor; an alternating current generator; and a control unit suitable for: instructing the generator to inject alternating current into the earth connection of the masses; measuring, between said first and second links, a voltage generated by said injected current; determining a resistance of the earth connection of the masses according to the injected current and the measured voltage; and emitting a first warning signal when said compared resistance exceeds said pre-determined threshold.

9. 发明授权

US09594102B2 Device for measuring ground connection resistance and onboard charger for a vehicle provided with such a device 有权
标题翻译：用于测量接地电阻的装置和车载充电器，用于配备这种装置的车辆
公开(公告)号：US09594102B2
公开(公告)日：2017-03-14
申请号：US14409765
申请日：2013-06-06
申请人： RENAULT S.A.S.
发明人： Christophe Ripoll , Christophe Konate , Etienne Cuiller
IPC分类号： H02J7/00 , G01R27/20 , B60L3/00 , B60L11/18
CPC分类号： G01R27/205 , B60L3/0069 , B60L11/1816 , B60L11/1818 , B60L2210/30 , B60L2240/547 , B60L2240/549 , G01R27/20 , Y02T10/7005 , Y02T10/7072 , Y02T10/7241 , Y02T90/127 , Y02T90/14
摘要： A device for measuring resistance of a ground tap and a charger for an on-board vehicle including the device. The device includes a current source and an ammeter disposed on a first electrical branch, provided to link a phase of a power supply network with the ground of the installation; a second electrical branch provided to link a neutral wire of the power supply network with the ground of the installation, including a resistor across terminals of which is connected a voltmeter, and a first capacitor in series with the resistor; and a third electrical branch is provided for linking the neutral wire of the network with the ground of the installation, and including, on the third branch, in parallel with the first capacitor and with the first resistor, a second capacitor of higher value than the first capacitor.
摘要翻译：一种用于测量用于包括该装置的车载车辆的接地抽头和充电器的电阻的装置。该设备包括设置在第一电气分支上的电流源和电流表，用于将电源网络的相位与设备的地面相连接; 第二电气分支，用于将电源网络的中性线与设备的接地连接，包括连接电压表的电阻器和与电阻器串联的第一电容器; 并且提供第三电气分支，用于将网络的中性线与设备的接地连接，并且在第三分支上包括与第一电容器并联的第一电阻器，以及与第一电阻器相比值更高的第二电容器第一个电容。

10. 发明申请

US20160169945A1 System and Method for Contact Measurement Circuit 审中-公开
标题翻译：接触式测量电路系统与方法
公开(公告)号：US20160169945A1
公开(公告)日：2016-06-16
申请号：US14569418
申请日：2014-12-12
申请人： Infineon Technologies Austria AG
发明人： Anton Mauder , Jens Barrenscheen
IPC分类号： G01R19/165 , G01R19/00
CPC分类号： G01R31/3274 , G01R27/205 , H01H1/0015 , H01H47/002
摘要： According to an embodiment, a contact measurement circuit is configured to be coupled between a first contact and a second contact, and the contact measurement circuit includes a first transistor, a control capacitor, and a voltage measurement unit. The first transistor includes a first conduction terminal configured to be coupled to the first contact, a second conduction terminal, and a first control terminal. The control capacitor includes a first capacitor terminal coupled to the second conduction terminal and a second capacitor terminal coupled to the first control terminal. The voltage measurement unit is coupled to the first capacitor terminal and the second capacitor terminal, and the second capacitor terminal is configured to be coupled to the second contact.
摘要翻译：根据实施例，接触测量电路被配置为耦合在第一触点和第二触点之间，并且触点测量电路包括第一晶体管，控制电容器和电压测量单元。第一晶体管包括被配置为耦合到第一触点的第一导电端子，第二导电端子和第一控制端子。控制电容器包括耦合到第二导电端子的第一电容器端子和耦合到第一控制端子的第二电容器端子。电压测量单元耦合到第一电容器端子和第二电容器端子，并且第二电容器端子被配置为耦合到第二触点。

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