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1. 发明申请

US20190057830A1 ELECTRON GUN ADJUSTMENT IN A VACUUM 审中-公开
公开(公告)号：US20190057830A1
公开(公告)日：2019-02-21
申请号：US16024837
申请日：2018-06-30
申请人： Varex Imaging Corporation
发明人： Chris Ferrari
IPC分类号： H01J19/48 , H01J19/54 , H01J19/50
CPC分类号： H01J3/027 , H01J3/022 , H01J19/48 , H01J19/50 , H01J19/54 , H01J23/04 , H01J23/06
摘要： Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, the enclosure including an external base including an opening; an internal base within the enclosure; and an adjustable support assembly adjustably coupling the internal base to the external base and extending through the opening, the adjustable support assembly comprising: a threaded shaft extending along a longitudinal axis and coupled to the internal base; a threaded hole component threadedly engaged with the threaded shaft and coupled to the external base such that the threaded hole component is axially constrained in a direction along the longitudinal axis relative to the external base independent of the threaded shaft; and a flexible component coupled to the external base and the threaded shaft and sealing the opening.

2. 发明授权

US09685296B1 Nonlinear transmission line based electron beam density modulator 有权
公开(公告)号：US09685296B1
公开(公告)日：2017-06-20
申请号：US14316766
申请日：2014-06-26
申请人： Brad Winston Hoff , David Michael French , Donald A. Shiffler , Susan L. Heidger , Wilkin W. Tang
发明人： Brad Winston Hoff , David Michael French , Donald A. Shiffler , Susan L. Heidger , Wilkin W. Tang
IPC分类号： H01J7/24 , H01J29/52
CPC分类号： H01J29/52 , H01J23/06 , H01J2229/70
摘要： An apparatus for modulating the density of an electron beam as it is emitted from a cathode, comprised of connecting a source of pulsed input power to the input end of a nonlinear transmission line and connecting the output end directly to the cathode of an electron beam diode by a direct electrical connection.

3. 发明授权

US08736170B1 Stable cold field emission electron source 有权
标题翻译：稳定的冷场发射电子源
公开(公告)号：US08736170B1
公开(公告)日：2014-05-27
申请号：US13032488
申请日：2011-02-22
申请人： Kun Liu , Gregory A. Schwind
发明人： Kun Liu , Gregory A. Schwind
IPC分类号： H01J25/50 , H01J23/06
CPC分类号： H01J23/06 , H01J37/063 , H01J37/073 , H01J2237/022
摘要： A cold field emission (CFE) electron source for a focused electron beam system such as a transmission electron microscope (TEM), scanning transmission electron microscope (STEM), or scanning electron microscope (SEM) is disclosed. The source employs an emitter enclosure electrode behind the CFE tip which, in conjunction with the extractor electrode, defines a closed volume that can be thoroughly cleaned by electron impact desorption (EID) and radiative heating from a heated filament located between the emitter enclosure electrode and extractor electrode. The extractor electrode may have a counterbore which restricts backscattered electrons generated at the extractor from reaching portions of the source and gun which have not been cleaned by EID. Pre-cleaning of the emitter enclosure electrode and extractor electrode prior to cold field emission substantially improves both source emission stability and frequency noise characteristics, enabling source operation over time intervals adequate for application to TEMs, STEMs, and SEMs.
摘要翻译：公开了透射电子显微镜（TEM），扫描透射电子显微镜（STEM）或扫描电子显微镜（SEM）等聚焦电子束系的冷场发射（CFE）电子源。该源在CFE尖端之后采用发射器外壳电极，其与提取器电极结合，限定可通过电子轰击解吸（EID）彻底清洁的封闭体积，以及位于发射体外壳电极和提取电极。提取器电极可以具有沉孔，其限制在提取器处产生的反向散射电子到达未被EID清洁的源和枪的部分。在冷场发射之前预先清洁发射器外壳电极和提取器电极大大改善了源发射稳定性和频率噪声特性，从而能够实现源于在适用于TEM，STEM和SEM的时间间隔的源操作。

4. 发明授权

US08564224B2 High average current, high quality pulsed electron injector 失效
标题翻译：高平均电流，高质量脉冲电子注入器
公开(公告)号：US08564224B2
公开(公告)日：2013-10-22
申请号：US13109131
申请日：2011-05-17
申请人： Phillip A. Sprangle , Steven H. Gold , Antonio C. Ting , Joseph R. Penano , Daniel F. Gordon , Bahman Hafizi
发明人： Phillip A. Sprangle , Steven H. Gold , Antonio C. Ting , Joseph R. Penano , Daniel F. Gordon , Bahman Hafizi
IPC分类号： H01J23/06 , H01J3/14
CPC分类号： H01J23/06
摘要： An electron injector including an electron source and a conducting grid situated close to the electron source, one or more RF accelerating/bunching cavities operating at the same fundamental RF frequency; a DC voltage source configured to bias the cathode at a small positive voltage with respect to the grid; a first RF drive configured to apply an RF signal between the cathode and grid at the fundamental and third harmonic RF frequencies; and a second RF drive configured to apply an RF drive signal to the accelerating/bunching cavities. Electrons are emitted by the cathode and travel through the grid to the accelerating/bunching cavities for input into an RF linac. The first RF drive applies a first RF drive signal at the fundamental frequency of the linac plus higher harmonics thereof to the gap between the cathode and the grid to cause the emitted electrons to form electron bunches and the second RF drive applies a second RF drive signal to the accelerating/bunching cavities on the other side of the grid to further accelerate and optimize the size of the electron bunches. Because the applied RF signals contain at the fundamental linac frequency, the electrons are bunched at that frequency and each RF bucket of the linac is filled with an electron bunch.
摘要翻译：一种电子注入器，包括靠近电子源的电子源和导电栅格，在相同的基本RF频率下工作的一个或多个RF加速/聚束腔; DC电压源，被配置为相对于所述栅极以小的正电压偏压所述阴极; 第一RF驱动器，被配置为在所述基极和三次谐波RF频率处在所述阴极和电网之间施加RF信号; 以及被配置为将RF驱动信号施加到加速/聚束空腔的第二RF驱动器。电子由阴极发射并通过栅格传播到加速/聚束腔，以输入到RF线性加速器。第一RF驱动器将线性加速器的基频加上其高次谐波的第一RF驱动信号施加到阴极和栅格之间的间隙，以使发射的电子形成电子束，并且第二RF驱动器施加第二RF驱动信号到网格另一侧的加速/聚束腔，以进一步加速和优化电子束的尺寸。因为所施加的RF信号包含基线频率，所以电子以该频率聚束，并且直线加速器的每个RF桶被电子束填充。

5. 发明申请

US20120119183A1 FABRICATION OF AN INTEGRATED TERAHERTZ SOURCE USING FIELD EMITTER ARRAY WITH GRATING STRUCTURE 审中-公开
标题翻译：使用具有光栅结构的场发射阵列制造一体化TERAHERTZ源
公开(公告)号：US20120119183A1
公开(公告)日：2012-05-17
申请号：US11832435
申请日：2007-08-01
申请人： Boris G. Kharas , Robert Amantea , Pradyumna Kumar Swain
发明人： Boris G. Kharas , Robert Amantea , Pradyumna Kumar Swain
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01J23/04 , H01J9/025 , H01J23/06 , H01J2201/304
摘要： The present invention provides for a fabrication of an integrated THz source. The fabrication includes integrating a field emitter array (FEA) with a grating by utilizing micro-electromechanical system (MEMS) and grating fabrication methods to build the FEA device upon a moveable surface that can be rotated perpendicular to the other, and locked into alignment or alternately finely adjusted.
摘要翻译：本发明提供一种集成的太赫兹源的制造。该制造包括通过利用微机电系统（MEMS）和光栅制造方法将场致发射阵列（FEA）与光栅集成，以在可垂直于另一个旋转的可移动表面上构建FEA装置，并锁定到对准或交替细调。

6. 发明申请

US20060022598A1 Field emission cathode gating for RF electron guns and planar focusing cathodes 有权
标题翻译：用于射频电子枪和平面聚焦阴极的场发射阴极门控
公开(公告)号：US20060022598A1
公开(公告)日：2006-02-02
申请号：US11248661
申请日：2005-10-11
申请人： John Lewellen , John Noonan
发明人： John Lewellen , John Noonan
IPC分类号： H01J25/50
CPC分类号： H01J3/14 , H01J3/021 , H01J23/06
摘要： A novel method of gating electron emission from field-emitter cathodes for radio frequency (RF) electrode guns and a novel cathode that provides a focused electron beam without the need for magnetic fields or a curved cathode surface are provided. The phase and strength of a predefined harmonic field, such as the 3rd harmonic field, are adjusted relative to a fundamental field to cause a field emission cathode to emit electrons at predefined times for the generation of high-brightness electron beams. The emission time is gated responsive to the combined harmonic and fundamental fields and the response of the FE cathode to the combined fields. A planar focusing cathode includes a selected dielectric material, such as a ceramic material, to provide an electron beam emission surface. Metal surfaces are provided both radially around and behind the dielectric material to shape the electric fields that accelerate and guide the beam from the cathode surface.
摘要翻译：提供了一种用于射频（RF）电极枪的场发射极阴极的电子发射的新颖方法和提供聚焦电子束而不需要磁场或弯曲阴极表面的新型阴极。预定谐波场（例如三次谐波场）的相位和强度相对于基波场被调整，以使场致发射阴极在预定时间内发射电子以产生高亮度电子束。发射时间响应于组合谐波和基波场以及FE阴极对组合场的响应而选通。平面聚焦阴极包括选择的介电材料，例如陶瓷材料，以提供电子束发射表面。在电介质材料的周围和后面设置金属表面，以形成加速和引导来自阴极表面的光束的电场。

7. 发明申请

US20020125841A1 Robust pierce gun 失效
公开(公告)号：US20020125841A1
公开(公告)日：2002-09-12
申请号：US09992694
申请日：2001-11-20
发明人： Frederick M. Mako , Amnon Fisher
IPC分类号： G09G001/04
CPC分类号： H01J3/023 , H01J23/06 , H01J2201/3423
摘要： The present invention pertains to an electron gun that generates an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun comprises an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun is also comprised of a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. The emitting sections preferably provide the cavity with an accelerating force for electrons inside the cavity. The multiple sections preferably include thin forward emitting surfaces. The forward emitting surfaces can be of an annular shape, or of a circular shape, or of a rhombohedron shape. The mechanism preferably includes a mechanism for producing an electrostatic electric field that provides the force and which has a radial component that prevents the electrons from straying out of the region between the first stage with emitting faces and the multiple emitting sections. Additionally, the gun includes a mechanism for producing a magnetic field to contain the electrons anywhere from the first stage with emitting faces or any emitting section and to the end of the cavity. The present invention pertains to a method for producing a flow of electrons. The method comprises the steps of moving at least a first electron in a first direction at one location. Next there is the step of striking a first area with the first electron. Then there is the step of producing additional electrons at the first area due to the first electron. Next there is the step of moving electrons from the first area to a second area and transmitting electrons through the second area and creating more electrons due to electrons from the first area striking the second area. These newly created electrons from the second area move in the first direction then strike the third area, fourth area, etc. Each area creates even more electrons in a repeating manner by moving in the first direction to multiple areas. This process is also repeated at different locations. The mechanism preferably includes a mechanism for accelerating the electrons inside the electrostatic cavity to allow the electron multiplication to continue. The mechanism preferably includes a control grid for bunching the electron flow. The present invention pertains to an electron gun. The electron gun comprises an electrostatic cavity having a first stage with electron emitting faces and multiple stages with electron emitting sections. The electron gun also comprises a mechanism for producing an electrostatic force which encompasses the electron emitting faces and the multiple electron emitting sections so electrons from the electron emitting faces and sections are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons on the opposite sides of the emitting sections and to further contact other emitting sections. The present invention pertains to a method for producing electrons. The method comprises the steps of moving at least a first electron in a first direction from a first location. Then, there is the step of striking a first area with the first electron. Next, there is the step of producing additional electrons at the first area due to the first electrons on the opposite side of the first area which was struck by the first electron. Next, there is the step of moving electrons from the first area to a second area. Then, there is the step of transmitting electrons to the second area and creating more electrons due to electrons from the first area striking the second area.

8. 发明申请

US20020036470A1 Electron tube device mounted with a cold cathode and a method of impressing voltages on electrodes of the electron tube device 失效
标题翻译：安装有冷阴极的电子管装置和在电子管装置的电极上施加电压的方法
公开(公告)号：US20020036470A1
公开(公告)日：2002-03-28
申请号：US09960767
申请日：2001-09-24
申请人： NEC CORPORATION
发明人： Shunji Tsuida , Hironori Imura , Hideo Makishima
IPC分类号： H01J023/18 , H01J025/02
CPC分类号： H01J23/02 , H01J3/021 , H01J23/06 , H01J25/34
摘要： Expressing a perveance of an electron gun to be determined by a form of the electron gun as Pnull, a voltage to be impressed on an accelerating electrode Va and a beam current Ib, voltage Va which satisfies the following expression, Ib
摘要翻译：通过电子枪的形式表示电子枪的外观为Pmu，施加在加速电极Va上的电压和束电流Ib，满足以下表达式的电压Va，第lvl =“0 “>在线配方> Ib 印在加速电极上。此外，加速电极的电位始终保持在电子管中的所有电极的最高水平。

9. 发明申请

US20010024091A1 Electron tube device mounted with a cold cathode and a method of impressing voltages on electrodes of the electron tube device 失效
标题翻译：安装有冷阴极的电子管装置和在电子管装置的电极上施加电压的方法
公开(公告)号：US20010024091A1
公开(公告)日：2001-09-27
申请号：US09808041
申请日：2001-03-15
发明人： Shunji Tsuida , Hironori Imura , Hideo Makishima
IPC分类号： H01J025/34 , H01J023/04
CPC分类号： H01J23/02 , H01J3/021 , H01J23/06 , H01J25/34
摘要： Expressing a perveance of an electron gun to be determined by a form of the electron gun as Pnull, a voltage to be impressed on an accelerating electrode Va and a beam current Ib, voltage Va which satisfies the following expression, Ib
摘要翻译：通过电子枪的形式表示电子枪的外观为Pmu，施加在加速电极Va上的电压和束电流Ib，满足以下表达式的电压Va，第lvl =“0 “>在线配方> Ib 印在加速电极上。此外，加速电极的电位始终保持在电子管中的所有电极的最高水平。

10. 发明授权

US6024618A Method of operating electron tube 失效
标题翻译：电子管操作方法
公开(公告)号：US6024618A
公开(公告)日：2000-02-15
申请号：US238412
申请日：1999-01-28
申请人： Hideo Makishima , Hisashi Takemura
发明人： Hideo Makishima , Hisashi Takemura
IPC分类号： H01J9/44 , H01J1/304 , H01J3/02 , H01J3/18 , H01J23/06 , H01J29/04 , H01J29/48 , H01J29/84 , H01J9/02
CPC分类号： H01J3/022 , H01J23/06 , H01J29/481 , H01J29/84
摘要： In a method of operating an electron tube including a plurality of emitters formed on a substrate and having sharp tips, gate electrodes surrounding the plurality of emitters, and a peripheral electrode surrounding an electron emission region constituted by the plurality of emitters and the gate electrodes and insulated from the plurality of emitters and the gate electrodes, the voltage applied to the peripheral electrode is set to be lower than the voltage applied to the gate electrode.
摘要翻译：一种操作电子管的方法，该电子管包括形成在基板上的具有尖锐尖端的多个发射体，围绕多个发射极的栅电极和围绕由多个发射极和栅电极构成的电子发射区的周边电极，以及与多个发射极和栅电极绝缘，施加到外围电极的电压被设定为低于施加到栅电极的电压。

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