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1. 发明公开

US20240234636A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20240234636A1
公开(公告)日：2024-07-11
申请号：US18502119
申请日：2023-11-06
申请人： Samsung Display Co., LTD.
发明人： Hyun Eok SHIN , Joon Yong PARK , Ju Hyun LEE
IPC分类号： H01L33/40 , H01L25/07 , H01L25/16 , H01L33/62
CPC分类号： H01L33/40 , H01L25/073 , H01L25/167 , H01L33/62 , H01L2933/0066
摘要： A display device including a substrate, and a first light emitting element, a second light emitting element, and a third light emitting element that are disposed on the substrate, each of the light emitting elements includes a first electrode, a light emitting layer, and a second electrode, the first electrode has a first metal layer, at least one inorganic layer, at least one etch stop layer, and a second metal layer stacked on each other, and a thickness of the first electrode of the first light emitting element is different from a thickness of the first electrode of the second light emitting element.

2. 发明授权

US09673129B2 Semiconductor device 有权
公开(公告)号：US09673129B2
公开(公告)日：2017-06-06
申请号：US14850196
申请日：2015-09-10
申请人： FUJI ELECTRIC CO., LTD.
发明人： Motohito Hori , Yoshikazu Takahashi , Yoshitaka Nishimura , Yoshinari Ikeda , Hiromichi Gohara
IPC分类号： H01L23/373 , H01L23/473 , H01L23/495 , H01L25/07 , H01L25/18 , H01L23/498
CPC分类号： H01L23/473 , H01L23/3735 , H01L23/49811 , H01L23/49838 , H01L25/07 , H01L25/073 , H01L25/18 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.

3. 发明申请

US20020185723A1 FLAT-TYPE SEMICONDUCTOR STACK 有权
标题翻译：平面型半导体堆叠
公开(公告)号：US20020185723A1
公开(公告)日：2002-12-12
申请号：US10002163
申请日：2001-12-05
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Hiroaki Yamaguchi , Yasuhito Shimomura
IPC分类号： H01L023/02
CPC分类号： H01L25/073 , H01L23/4012 , H01L2924/0002 , H01L2924/00
摘要： In a flat-type semiconductor stack formed by alternately stacking flat-type semiconductor devices (1) and heat-radiating elements (2), a projecting pin (7) is provided on a contact surface of at least one flat-type semiconductor device (1) while a positioning recess (8a) and a guide groove (8) are formed in a contact surface of at least one heat-radiating element (2), the guide groove (8) extending directly from the positioning recess (8a) to a side surface of the heat-radiating element (2). The flat-type semiconductor device (1) is aligned with the heat-radiating element (2) by fitting the pin (7) in the guide groove (8) and sliding the pin (7) along the guide groove (8) until the pin (7) stops to slide at the positioning recess (8a).
摘要翻译：在通过交替地堆叠平板型半导体器件（1）和散热元件（2）形成的平坦型半导体堆叠中，在至少一个平面型半导体器件（1）的接触表面上设置有突出销（7） 1），在至少一个散热元件（2）的接触表面上形成定位凹槽（8a）和引导槽（8），所述引导槽（8）从定位凹槽（8a）直接延伸到热辐射元件（2）的侧表面。扁平型半导体器件（1）通过将引脚（7）装配在引导槽（8）中并且沿着引导槽（8）滑动销（7）而与散热元件（2）对准，直到销（7）停止在定位凹槽（8a）处滑动。

4. 发明授权

US5191224A Wafer scale of full wafer memory system, packaging method thereof, and wafer processing method employed therein 失效
标题翻译：全晶圆存储器系统的晶片尺寸，其封装方法和其中采用的晶片处理方法
公开(公告)号：US5191224A
公开(公告)日：1993-03-02
申请号：US627881
申请日：1990-12-13
申请人： Masanori Tazunoki , Hiromitsu Mishimagi , Makoto Homma , Toshiyuki Sakuta , Hisashi Nakamura , Keiji Sasaki , Minoru Enomoto , Toshihiko Satoh , Kunizo Sahara , Shigeo Kuroda , Kanji Otsuka , Masao Kawamura , Hinoko Kurosawa , Kazuya Ito
发明人： Masanori Tazunoki , Hiromitsu Mishimagi , Makoto Homma , Toshiyuki Sakuta , Hisashi Nakamura , Keiji Sasaki , Minoru Enomoto , Toshihiko Satoh , Kunizo Sahara , Shigeo Kuroda , Kanji Otsuka , Masao Kawamura , Hinoko Kurosawa , Kazuya Ito
IPC分类号： H01L23/14 , H01L23/32 , H01L23/538 , H01L25/065 , H01L25/07
CPC分类号： H01L23/147 , H01L23/32 , H01L23/5385 , H01L25/0652 , H01L25/073 , H01L2224/0401 , H01L2224/16225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/48599 , H01L2224/48699 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/15174 , H01L2924/15312 , H01L2924/16152 , H01L2924/3025
摘要： To achieve higher packaging density and one wafer level for a full-sized wafer memory, or wafer-scale integration memory system, the wafers are vertically stacked with each other at a predetermined interval. A packaging technique is improved in such a way that a memory system layout can be precisely realized and a precise through hole can be formed. Moreover, other chips are fixed on the wafer so as to achieve furthermore the high packaging density.
摘要翻译：为了实现全尺寸晶片存储器或晶片级积分存储器系统的更高的封装密度和一个晶片级，晶片以预定的间隔彼此垂直堆叠。改进了封装技术，使得可以精确地实现存储器系统布局并且可以形成精确的通孔。此外，其他芯片固定在晶片上，从而进一步实现高封装密度。

5. 发明授权

US3246213A Rectifier mounting and heat dissipating structure 失效
标题翻译：整流器安装和散热结构
公开(公告)号：US3246213A
公开(公告)日：1966-04-12
申请号：US19069662
申请日：1962-04-27
申请人： WESTINGHOUSE BRAKE & SIGNAL
发明人： TOWNSEND HANNAN NEIL
IPC分类号： H01L23/40 , H01L25/03 , H01L25/07
CPC分类号： H01L25/03 , H01L23/40 , H01L23/4006 , H01L25/073 , H01L2023/4031 , H01L2023/405 , H01L2924/0002 , H01L2924/00

6. 发明授权

US2883592A Encapsulated selenium rectifiers 失效
标题翻译：封装硒整流器
公开(公告)号：US2883592A
公开(公告)日：1959-04-21
申请号：US55669355
申请日：1955-12-30
申请人： GEN ELECTRIC
发明人： BURTON LESTER W , THURELL JR JOHN R
IPC分类号： H01L25/07
CPC分类号： H01L25/073 , H01L2924/0002 , H01L2924/00

7. 发明授权

US2832015A Rectifier device 失效
标题翻译：整流装置
公开(公告)号：US2832015A
公开(公告)日：1958-04-22
申请号：US55696156
申请日：1956-01-03
申请人： MORRIS BOOKSTEIN
发明人： ORTEGA HUGH R
IPC分类号： H01L25/07
CPC分类号： H01L25/073 , H01L2924/0002 , Y10T24/44026 , Y10T24/44034 , H01L2924/00

8. 发明授权

US2752542A Dry-plate rectifier 失效
标题翻译：干板整流器
公开(公告)号：US2752542A
公开(公告)日：1956-06-26
申请号：US24757351
申请日：1951-09-21
申请人： SIEMENS AG
发明人： ERICH NITSCHE
IPC分类号： H01L25/07 , H01L29/00
CPC分类号： H01L25/073 , H01L29/00 , H01L2924/0002 , H01L2924/00

9. 发明授权

US2740924A Dry plate type rectifier 失效
标题翻译：干板式整流器
公开(公告)号：US2740924A
公开(公告)日：1956-04-03
申请号：US23527251
申请日：1951-07-05
申请人： KEEFE & MERRITT COMPANY O
发明人： BRAINARD MAURICE W
IPC分类号： H01L25/03 , H01L25/07 , H01L29/00
CPC分类号： H01L25/073 , H01L25/03 , H01L29/00 , H01L2924/0002 , H01L2924/00

10. 发明授权

US2713655A Selenium rectifier 失效
标题翻译：硒整流器
公开(公告)号：US2713655A
公开(公告)日：1955-07-19
申请号：US20445551
申请日：1951-01-04
申请人： STANLEY GRUBMAN
发明人： STANLEY GRUBMAN
IPC分类号： H01L25/07 , H01L25/11
CPC分类号： H01L25/117 , H01L25/073 , H01L2924/0002 , H01L2924/00

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