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1. 发明授权

US12003230B2 Systems for controlling a slew rate of a switch 有权
公开(公告)号：US12003230B2
公开(公告)日：2024-06-04
申请号：US16216805
申请日：2018-12-11
申请人： MediaTek Inc.
发明人： Yun-Yao Hung , Chien-Lung Lee , Shao-Siang Ng , Chun-Yen Tseng
IPC分类号： H03K17/16 , H03K17/081
CPC分类号： H03K17/168 , H03K17/08116 , H03K17/166 , H03K2217/0036
摘要： Systems and methods are described herein for controlling a switch. In some embodiments, circuitry may detect a voltage across the switch. A current reference signal may be generated based on the voltage across the switch. The switch may be controlled based, at least in part, on the current reference signal.

2. 发明授权

US11670558B2 Semiconductor device 有权
公开(公告)号：US11670558B2
公开(公告)日：2023-06-06
申请号：US16846557
申请日：2020-04-13
申请人： Mitsubishi Electric Corporation
发明人： Masafumi Jochi
IPC分类号： H01L23/31 , H01L23/495 , H03K17/081 , H01L23/00
CPC分类号： H01L23/3121 , H01L23/4951 , H01L23/49541 , H01L23/49575 , H01L23/49589 , H03K17/08116 , H01L24/48 , H01L2224/48091 , H01L2224/48137 , H01L2224/48175
摘要： A semiconductor device includes a semiconductor element, a die pad, an encapsulating member, and a plurality of leads. The die pad has a front surface on which the semiconductor element is mounted. The encapsulating member covers and seals the semiconductor element. The plurality of leads each have a first end connected to the semiconductor element in an inside of the encapsulating member and a second end led out from a side surface of the encapsulating member. A lower surface of a package including the semiconductor element, the die pad, and the encapsulating member is located on a back surface side of the die pad and has a convexly curved shape.

3. 发明授权

US10056893B2 Molded power module having single in-line leads 有权
公开(公告)号：US10056893B2
公开(公告)日：2018-08-21
申请号：US15294778
申请日：2016-10-16
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Bum-Seok Suh , Zhiqiang Niu , Wonjin Cho , Son Tran , James Rachana Bou
IPC分类号： H01L23/62 , H03K17/041 , H01L23/31 , H01L25/07 , H01L23/495 , H01L23/00 , H03K17/081 , H03K17/16 , H03K17/08
CPC分类号： H03K17/041 , H01L23/3114 , H01L23/49503 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L23/49579 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/0603 , H01L2224/45124 , H01L2224/45624 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2924/13055 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H03K17/08116 , H03K17/163 , H03K2017/0806 , H01L2924/00014 , H01L2924/00012
摘要： A power module has a lead frame, a first power chip, a second power chip, a plurality of single in-line leads, a gate drive and protection integrated circuit (IC), a plurality of bonding wires and a molding encapsulation. The first and second power chips are attached to a top surface of the lead frame. The plurality of single in-line leads has a high voltage power lead, a low voltage power lead and a plurality of signal control leads. The low voltage power lead has a lead portion and an extension portion. The gate drive and protection IC is attached to the extension portion of the low voltage power lead. The molding encapsulation encloses the first and second power chips, the extension portion of the low voltage power lead, the gate drive and protection IC, the plurality of bonding wires and at least a majority portion of the lead frame.

4. 发明申请

US20170288394A1 SYSTEM AND SWITCH ASSEMBLY THEREOF WITH FAULT PROTECTION AND ASSOCIATED METHOD 审中-公开
公开(公告)号：US20170288394A1
公开(公告)日：2017-10-05
申请号：US15474322
申请日：2017-03-30
申请人： Genera Electric Company
发明人： Zhihui YUAN , He XU , Jie SHEN , Fan ZHANG , Stefan SCHROEDER
IPC分类号： H02H7/20 , H03K17/081
CPC分类号： H02H7/205 , H02H7/1216 , H02H7/1225 , H02H7/1255 , H02M1/088 , H02M1/32 , H02M2001/325 , H03K17/08116 , H03K17/082
摘要： A system, a switch assembly and an associated method. The system includes a number of switch assemblies, each including a switch module, isolation circuits, a detection unit, and a drive unit. The switch module includes power switch devices connected in parallel. The switch modules are connected in series. The isolation circuits each are connected in series to a gate terminal of at least one corresponding power switch device of the power switch devices. Each isolation circuit includes a capacitor or a controllable switch. The detection unit detects faults in at least one of the power switch devices. The drive unit is coupled to the switch module via the isolation circuits for driving the power switch devices of the corresponding switch module, and when the fault is detected, the drive unit is for turning on the power switch devices parallel connected to the at least one of faulty power switch devices.

5. 发明申请

US20150131189A1 COMPOSITE HIGH VOLTAGE DC CIRCUIT BREAKER 审中-公开
标题翻译：复合高压直流断路器
公开(公告)号：US20150131189A1
公开(公告)日：2015-05-14
申请号：US14381570
申请日：2012-03-01
申请人： Colin Charnock Davidson , Colin Donald Murray Oates , Alistair Burnett
发明人： Colin Charnock Davidson , Colin Donald Murray Oates , Alistair Burnett
IPC分类号： H02H3/10 , H02H9/04 , H02H9/02
CPC分类号： H02H3/10 , H01H9/542 , H01H9/548 , H01H33/596 , H01H2009/543 , H01H2009/544 , H02H3/025 , H02H3/087 , H02H9/02 , H02H9/044 , H03K17/08116
摘要： A circuit breaker for high voltage direct current (HVDC) power transmission includes a module with a pair of terminals for connection to an electrical network, and four of conduction paths. Each first conduction path includes a mechanical switch connected in series with at least one first semiconductor switch to selectively allow current to flow between the first and second terminals through the first conduction path in a first mode of operation or commutate current from the first conduction path to the second conduction path in a second mode of operation. The second conduction path also has a semiconductor switch to selectively allow current to flow between the terminals through the second conduction path or commutate current from the second conduction path to the third conduction path in the second mode of operation. The third conduction path has a snubber circuit with an energy storage device to control a rate of change of voltage across the mechanical switch and oppose current flowing between the first and second terminals in the second mode of operation. The fourth conduction path has a resistive element to absorb and dissipate energy in the second mode of operation and divert charging current from the first and second terminals away from the energy storage device to limit a maximum voltage across the pair of terminals.
摘要翻译：用于高压直流（HVDC）电力传输的断路器包括具有用于连接到电网的一对端子的模块和四个导电路径。每个第一导电路径包括与至少一个第一半导体开关串联连接的机械开关，以选择性地允许电流在第一操作模式中通过第一导电路径在第一和第二端子之间流动，或者从第一导电路径到第二传导路径处于第二操作模式。第二导电路径还具有半导体开关，以选择性地允许电流在第二操作模式中通过第二导电路径在端子之间流动或从第二导电路径到第三导电路径的整流电流。第三导电路径具有缓冲电路，其具有能量存储装置，用于控制横跨机械开关的电压变化率，并且在第二操作模式下与第一和第二端子之间的电流相反。第四导电路径具有电阻元件，以在第二操作模式中吸收和耗散能量，并将来自第一和第二端子的充电电流从能量存储装置转移以限制该对端子两端的最大电压。

6. 发明公开

US20240146293A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 审中-公开
公开(公告)号：US20240146293A1
公开(公告)日：2024-05-02
申请号：US18470830
申请日：2023-09-20
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Noboru INOMATA , Hideyuki TAJIMA
IPC分类号： H03K17/081
CPC分类号： H03K17/08116 , H03K2217/0027
摘要： A semiconductor device that outputs a high-speed and large-current pulse is provided. The semiconductor device includes: a first N channel transistor having its gate receiving a second voltage as its input; a first resistance element having its second terminal connected to a drain of the first N channel transistor; a second resistance element having its first terminal connected to a source of the first N channel transistor; a second N channel transistor having its gate receiving a second voltage as its input; a third resistance element having its second terminal connected to a drain of the second N channel transistor; a fourth resistance element having its first terminal connected to a source of the second N channel transistor; and an isolator having its first terminal connected to the drain of the first N channel transistor and having its second terminal connected to the drain of the second N channel transistor.

7. 发明公开

US20240014813A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240014813A1
公开(公告)日：2024-01-11
申请号：US18474562
申请日：2023-09-26
申请人： FUJI ELECTRIC CO., LTD.
发明人： Yuki KUMAZAWA
IPC分类号： H03K17/16 , H03K17/081 , H02M1/08
CPC分类号： H03K17/168 , H03K17/08116 , H02M1/08 , H03K2017/0806
摘要： An object of the present invention is to provide a semiconductor device capable of suppressing loss in a switching element at high temperature without increasing radiation noise of the switching element. A semiconductor device includes an IGBT including a gate to which a gate signal is input, a temperature detection element that detects temperature of the IGBT, and a capacitance adjustment unit that is arranged between the gate of the IGBT and a reference potential terminal and that adjusts a capacitance between the gate and an emitter of the IGBT according to a detection temperature detected by the temperature detection element.

8. 发明申请

US20190148354A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190148354A1
公开(公告)日：2019-05-16
申请号：US15738451
申请日：2016-12-22
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Ryohei KOTANI , Toshiki MATSUBARA , Nobutaka ISHIZUKA , Masato MIKAWA , Hiroshi OSHINO
IPC分类号： H01L27/02 , H01L29/866 , H01L29/06 , H01L29/36 , H01L29/739 , H03K17/081
CPC分类号： H01L27/0255 , H01L29/0688 , H01L29/0692 , H01L29/36 , H01L29/7395 , H01L29/866 , H03K17/06 , H03K17/08116 , H03K17/082 , H03K17/74 , H03K2017/066
摘要： A semiconductor switch SW that includes a collector electrode C, an emitter electrode E and a gate electrode G, a Zener diode 5A configured to include one end electrically connected to the collector electrode C, the other end electrically connected to the gate electrode G, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, a Zener diode 5B configured to include one end electrically connected to the gate electrode G, the other end electrically connected to the emitter electrode E, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, are provided. The Zener diode 5A and the Zener diode 5B are configured so as not to allow the voltage of the gate electrode G to be increased to an on-threshold voltage of the semiconductor switch SW in the reverse bias application state.

9. 发明申请

US20180174986A1 POWER DEVICE 审中-公开
公开(公告)号：US20180174986A1
公开(公告)日：2018-06-21
申请号：US15897925
申请日：2018-02-15
申请人： Furukawa Electric Co., Ltd. , Furukawa Automotive Systems Inc.
发明人： Ryosuke Tamura , Kaoru Sugimoto , Syusuke Kaya
IPC分类号： H01L23/64 , H01L29/20 , H01L27/088 , H01L27/02 , H01L23/66 , H01L27/06 , H03K17/081 , H03K17/16
CPC分类号： H01L23/645 , H01L21/02378 , H01L21/02381 , H01L21/0254 , H01L21/8258 , H01L23/66 , H01L24/45 , H01L24/48 , H01L27/0248 , H01L27/0255 , H01L27/0288 , H01L27/0605 , H01L27/0617 , H01L27/088 , H01L27/0883 , H01L28/10 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7787 , H01L2223/6627 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48245 , H01L2924/19032 , H01P3/081 , H03K17/08116 , H03K17/102 , H03K17/162 , H03K17/168 , H03K2017/6875 , H01L2924/00014
摘要： There is provided a power device capable of easily designing a switching circuit that takes measures against high frequency noise while maintaining a switching speed without change.The power device includes a normally-on type first transistor, a normally-off type second transistor, and an electric path that forms a cascode connection between the first transistor and the second transistor, and contains an inductance component.

10. 发明授权

US09998115B1 Clamp for a hybrid switch 有权
公开(公告)号：US09998115B1
公开(公告)日：2018-06-12
申请号：US15838171
申请日：2017-12-11
申请人： Power Integrations, Inc.
发明人： Hartley Horwitz , Sorin Georgescu , Kuo-Chang Robert Yang
IPC分类号： H03K17/687 , H01L29/06 , H03K17/567 , H03K5/08 , H01L29/866
CPC分类号： H03K17/567 , H01L29/0619 , H01L29/866 , H03K5/08 , H03K17/08116
摘要： A cascode switch circuit includes a normally-on device cascode coupled to a normally-off device between first and second terminals of the cascode switch circuit. A leakage clamp circuit is coupled between first and second terminals of the normally-off device. The leakage clamp circuit is coupled to clamp a voltage at an intermediate terminal between the normally-on device and the normally-off device at a threshold voltage level. The leakage clamp circuit is further coupled to clamp a voltage between the second terminal of the normally-on device and the control terminal of the normally-on device at the threshold voltage level to keep the normally-on device off when the normally-on device and the normally-off device are off.

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