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    • 3. 发明申请
    • MEMORY CIRCUIT INCORPORATING RADIATION-HARDENED MEMORY SCRUB ENGINE
    • 存储电路与辐射硬化存储器发动机
    • US20150169400A1
    • 2015-06-18
    • US14635880
    • 2015-03-02
    • SILICON SPACE TECHNOLOGY CORPORATION
    • WESLEY H. MORRISDAVID R. GIFFORDREX E. LOWTHER
    • G06F11/10
    • G06F11/1008G06F11/0793G06F11/1048G06F11/183G06F11/186G11C8/00H03K19/00392
    • An example integrated circuit includes a first memory array including a first plurality of data groups, each such data group including a respective plurality of data bits. The integrated circuit also includes a first error detection and correction (EDAC) circuit configured to detect and correct an error in a data group read from the first memory array. The integrated circuit also includes a first scrub circuit configured to access in a sequence each of the first plurality of data groups to correct any detected errors therein. Both the first EDAC circuit and the first scrub circuit include spatially redundant circuitry. The first EDAC circuit and the first scrub circuit may include buried guard ring (BGR) structures, and may include parasitic isolation device (PID) structures. The spatially redundant circuitry may include dual interlocked storage cell (DICE) circuits, and may include temporal filtering circuitry.
    • 示例性集成电路包括包括第一多个数据组的第一存储器阵列,每个这样的数据组包括相应的多个数据位。 集成电路还包括被配置为检测和校正从第一存储器阵列读取的数据组中的错误的第一错误检测和校正(EDAC)电路。 该集成电路还包括第一擦除电路,其被配置为按顺序访问第一多个数据组中的每个数据组以校正其中检测到的任何错误。 第一EDAC电路和第一擦洗电路都包括空间冗余电路。 第一EDAC电路和第一擦除电路可以包括掩埋保护环(BGR)结构,并且可以包括寄生隔离装置(PID)结构。 空间冗余电路可以包括双重互锁存储单元(DICE)电路,并且可以包括时间滤波电路。
    • 4. 发明授权
    • Redundancy circuit for reducing chip area
    • 用于减少芯片面积的冗余电路
    • US09036392B2
    • 2015-05-19
    • US13207650
    • 2011-08-11
    • Heung-Taek Oh
    • Heung-Taek Oh
    • G11C17/00H03K19/003G11C29/00G11C17/16
    • H03K19/00392G11C17/16G11C29/787
    • A redundancy circuit includes a plurality of block address lines, a first fuse array storing a first data, a plurality of first local lines configured to supply a verification voltage to the first fuse array in response to a signal of a corresponding line among the plurality of block address lines, a second fuse array storing a second data, a plurality of second local lines configured to supply the verification voltage to the second fuse array in response to a signal of a corresponding line among the plurality of block address lines, and a plurality of verification lines configured to check the first data of the first fuse array and the second data of the second fuse array, wherein the plurality of verification lines are shared by the first fuse array and the second fuse array and are disposed between the first fuse array and the second fuse array.
    • 冗余电路包括多个块地址线,存储第​​一数据的第一熔丝阵列,多个第一本地线,其被配置为响应于所述第一熔丝阵列中的相应线的信号,向第一熔丝阵列提供验证电压 块地址线,存储第​​二数据的第二熔丝阵列,多个第二本地线,被配置为响应于所述多个块地址线中的对应线的信号而将验证电压提供给所述第二熔丝阵列,以及多个 被配置为检查第一熔丝阵列的第一数据和第二熔丝阵列的第二数据的验证线,其中多个验证线由第一熔丝阵列和第二熔丝阵列共享,并且设置在第一熔丝阵列 和第二保险丝阵列。
    • 8. 发明授权
    • Low leakage logic circuit
    • 低泄漏逻辑电路
    • US08680885B1
    • 2014-03-25
    • US13686002
    • 2012-11-27
    • Valter KaravanicGary Hau
    • Valter KaravanicGary Hau
    • H03K17/16H03K19/003H03K19/23
    • H03K19/001H03K19/00392
    • A low leakage logic circuit. The low leakage logic circuit includes a control circuit for logic circuit. The control circuit has a first transistor, a second transistor, a third transistor, a first diode, a first resistor and a second resistor. When the control circuit is ON, a first circuit path in the logic circuit is supplied with a first voltage from the source terminal of the third transistor. This voltage acts as a logic output and has the ability to source current at output terminal of the logic circuit. When the control circuit is OFF, a second circuit path in the logic circuit is supplied with a second voltage from the control circuit which is lower than the turn-on voltage of the second circuit path. This voltage is insufficient to turn ON the logic circuit, hence no current flows into the logic circuit.
    • 低泄漏逻辑电路。 低泄漏逻辑电路包括用于逻辑电路的控制电路。 控制电路具有第一晶体管,第二晶体管,第三晶体管,第一二极管,第一电阻器和第二电阻器。 当控制电路为ON时,从第三晶体管的源极端子向逻辑电路中的第一电路提供第一电压。 该电压用作逻辑输出,并具有在逻辑电路的输出端输出电流的能力。 当控制电路断开时,向控制电路提供逻辑电路中的第二电路,该第二电压低于第二电路路径的接通电压。 该电压不足以导通逻辑电路,因此没有电流流入逻辑电路。
    • 9. 发明申请
    • VOLATILE MEMORY ELEMENTS WITH SOFT ERROR UPSET IMMUNITY
    • 具有软错误UPS易失性的易失性存储器元件
    • US20130279242A1
    • 2013-10-24
    • US13924389
    • 2013-06-21
    • Altera Corporation
    • Bruce B. Pedersen
    • G11C11/412
    • G11C11/412G11C7/20G11C11/4125H03K19/00392H03K19/177H03K19/1776H03K19/17764
    • Memory elements are provided that exhibit immunity to soft error upset events when subjected to high-energy atomic particle strikes. The memory elements may each have ten transistors including two address transistors and four transistor pairs that are interconnected to form a bistable element. Clear lines such as true and complement clear lines may be routed to positive power supply terminals and ground power supply terminals associated with certain transistor pairs. During clear operations, some or all of the transistor pairs can be selectively depowered using the clear lines. This facilitates clear operations in which logic zero values are driven through the address transistors and reduces cross-bar current surges.
    • 提供了存储元件,当受到高能原子粒子撞击时,表现出对软错误失调事件的抵抗力。 存储元件可以各自具有十个晶体管,其包括互连以形成双稳态元件的两个地址晶体管和四个晶体管对。 诸如真实和补充清除线之类的清除线可以被路由到与某些晶体管对相关联的正电源端子和接地电源端子。 在清除操作期间,可以使用清除线选择性地削弱部分或全部晶体管对。 这有助于明确的操作,其中逻辑零值通过地址晶体管驱动并且减小交叉电流浪涌。