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1. 发明授权

US6114222A Method to cure mobile ion contamination in semiconductor processing 失效
标题翻译：在半导体加工中固化移动离子污染的方法
公开(公告)号：US6114222A
公开(公告)日：2000-09-05
申请号：US71501
申请日：1998-05-01
申请人： Randhir P. S. Thakur
发明人： Randhir P. S. Thakur
IPC分类号： H01L21/322 , H01L23/31 , H01C21/324
CPC分类号： H01L23/3171 , H01L21/3221 , H01L2924/0002 , H01L2924/19041 , Y10S148/112
摘要： A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.
摘要翻译：本发明的第一实施例引入了一种在半导体处理期间固化半导体器件中的移动离子污染的方法，它们通过以下步骤：在起始衬底中形成有源场效应晶体管; 在场效应晶体管和场氧化物上形成第一绝缘层; 在所述第一绝缘层上形成第二绝缘层; 以及在将所述绝缘层暴露于移动离子杂质之前，在含氮气体环境中进行退火步骤。第二实施例教导了一种在半导体处理期间通过在将所述绝缘层暴露于移动离子杂质之前退火含氮气体环境中的绝缘层来固化移动离子污染物的方法。

2. 发明授权

US4784973A Semiconductor contact silicide/nitride process with control for silicide thickness 失效
标题翻译：半导体接触硅化物/氮化物工艺，控制硅化物厚度
公开(公告)号：US4784973A
公开(公告)日：1988-11-15
申请号：US88681
申请日：1987-08-24
申请人： E. Henry Stevens , Paul J. McClure , Christopher W. Hill
发明人： E. Henry Stevens , Paul J. McClure , Christopher W. Hill
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/283
CPC分类号： H01L21/28518 , Y10S148/112 , Y10S148/118 , Y10S148/147 , Y10S257/915
摘要： A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.

3. 发明授权

US4266985A Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate 失效
标题翻译：一种用于制造半导体器件的方法，该半导体器件包括与硅衬底的直接热氮化结合的离子注入步骤
公开(公告)号：US4266985A
公开(公告)日：1981-05-12
申请号：US40407
申请日：1979-05-18
申请人： Takashi Ito , Shinpei Hijiya
发明人： Takashi Ito , Shinpei Hijiya
IPC分类号： H01L21/265 , H01L21/318 , H01L21/324 , H01L29/10 , H01L21/31
CPC分类号： H01L21/3185 , H01L21/2652 , H01L21/324 , H01L29/105 , Y10S148/112
摘要： Impurity ions implanted into a semiconductor silicon substrate are not redistributed during a heating of the substrate from the substrate to the film. Such redistribution does not occur due to the direct nitridation of the silicon substrate for forming the silicon nitride film.
摘要翻译：注入半导体硅衬底中的杂质离子在衬底从衬底加热到膜期间不重新分布。由于用于形成氮化硅膜的硅衬底的直接氮化，不会发生这种再分布。

4. 发明授权

US5541436A MOS transistor having improved oxynitride dielectric 失效
标题翻译：具有改善的氮氧化物电介质的MOS晶体管
公开(公告)号：US5541436A
公开(公告)日：1996-07-30
申请号：US336970
申请日：1994-11-10
申请人： Dim-Lee Kwong , Giwan Yoon , Jonghan Kim
发明人： Dim-Lee Kwong , Giwan Yoon , Jonghan Kim
IPC分类号： H01L21/28 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28185 , H01L21/28202 , H01L29/518 , Y10S148/112
摘要： High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.
摘要翻译：通过在高于900℃的温度下氧化一氧化二氮（N 2 O）的气氛中的单晶硅体的表面，形成具有氮氧化物的具有氮氧原子的高质量超薄栅氧化物，具有在氧化硅 - 硅界面处的峰。优选在900〜-1100℃的范围内，然后在无水氨气氛中加热硅体和氧化表面，从而在氧化物中引入额外的氮原子，增加对硼渗透的抵抗力，而不会通过电荷捕获降低氧化物。所得氧氮化物在通道热电子应力下具有较少的劣化，并且在MIS应用中比常规氧化硅的寿命更长一个数量级。

5. 发明授权

US5492854A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5492854A
公开(公告)日：1996-02-20
申请号：US358624
申请日：1994-12-14
申请人： Koichi Ando
发明人： Koichi Ando
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/316 , H01L21/318 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L27/1085 , H01L28/40 , H01L21/3185 , H01L28/60 , Y10S148/014 , Y10S148/017 , Y10S148/112 , Y10S438/913 , Y10S438/974
摘要： A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.
摘要翻译：制造半导体器件的方法包括形成电容器的步骤。该步骤包括形成由选择性地覆盖半导体衬底上的预定绝缘膜的表面的多晶硅膜构成的下电极的步骤，以及在含有SiH 4气体的气氛中进行加热并除去天然氧化物膜的步骤在下电极的表面上，然后在不暴露于氧气氛下进行氮化硅膜的形成。

6. 发明授权

US5397720A Method of making MOS transistor having improved oxynitride dielectric 失效
标题翻译：制造具有改善的氮氧化物电介质的MOS晶体管的方法
公开(公告)号：US5397720A
公开(公告)日：1995-03-14
申请号：US179016
申请日：1994-01-07
申请人： Dim-Lee Kwong , Giwan Yoon , Jonghan Kim
发明人： Dim-Lee Kwong , Giwan Yoon , Jonghan Kim
IPC分类号： H01L21/28 , H01L29/51 , H01L21/265
CPC分类号： H01L21/28185 , H01L21/28202 , H01L29/518 , Y10S148/112
摘要： High quality ultrathin gate oxides having nitrogen atoms therein with a profile having a peak at the silicon oxide-silicon interface are formed by oxidizing a surface of a monocrystalline silicon body in an atmosphere of nitrous oxide (N.sub.2 O) at a temperature above 900.degree. C. preferably in the range of 900.degree.-1100.degree. C., and then heating the silicon body and oxidized surface in an atmosphere of anhydrous ammonia to introduce additional nitrogen atoms into the oxide and increase resistance to boron penetration without degrading the oxide by charge trapping. The resulting oxynitride has less degradation under channel hot electron stress and approximately one order of magnitude longer lifetime than that of conventional silicon oxide in MIS applications.
摘要翻译：通过在高于900℃的温度下氧化一氧化二氮（N 2 O）的气氛中的单晶硅体的表面，形成具有氮氧化物的具有氮氧原子的高质量超薄栅氧化物，具有在氧化硅 - 硅界面处的峰。优选在900〜-1100℃的范围内，然后在无水氨气氛中加热硅体和氧化表面，从而在氧化物中引入额外的氮原子，增加对硼渗透的抵抗力，而不会通过电荷捕获降低氧化物。所得氧氮化物在通道热电子应力下具有较少的劣化，并且在MIS应用中比常规氧化硅的寿命更长一个数量级。

7. 发明授权

US4621277A Semiconductor device having insulating film 失效
标题翻译：具有绝缘膜的半导体器件
公开(公告)号：US4621277A
公开(公告)日：1986-11-04
申请号：US372720
申请日：1982-04-28
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： H01L21/28 , H01L21/314 , H01L21/318 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L29/34
CPC分类号： H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L29/51 , H01L29/511 , H01L21/28167 , Y10S148/043 , Y10S148/112 , Y10S148/114
摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, is commonly used, for example, the passivation film or to insulate the gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.
摘要翻译：通常使用诸如SiO 2，Si 3 N 4和PSG膜的绝缘膜，例如钝化膜或使MISFET的栅电极绝缘。通过提供通过例如在NH 3气体中形成SiO 2膜，优选直接热氧化的硅膜形成的绝缘膜来增强半导体器件的生产或操作期间的绝缘膜的稳定性。根据本发明的绝缘膜用于MISFET中的栅极绝缘膜，用于半导体器件的电容器或钝化膜，以及用于选择性地形成半导体器件的电路元件的掩模。形成绝缘膜的方法可以包括连续的氮化，氧化和氮化步骤。

8. 发明授权

US4084986A Method of manufacturing a semi-insulating silicon layer 失效
标题翻译：制造半绝缘硅层的方法
公开(公告)号：US4084986A
公开(公告)日：1978-04-18
申请号：US678061
申请日：1976-04-19
申请人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Hisao Hayashi
发明人： Teruaki Aoki , Takeshi Matsushita , Tadayoshi Mifune , Hisao Hayashi
IPC分类号： H01L27/04 , H01L21/00 , H01L21/265 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/329 , H01L21/331 , H01L21/76 , H01L21/822 , H01L23/29 , H01L23/31 , H01L29/73 , H01L29/78 , H01L29/8605 , H01L21/26
CPC分类号： H01L29/8605 , H01L21/00 , H01L21/26506 , H01L21/314 , H01L21/31654 , H01L21/3185 , H01L23/291 , H01L23/3157 , H01L2924/0002 , Y10S148/061 , Y10S148/085 , Y10S148/112 , Y10S148/114 , Y10S438/958
摘要： An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 10.sup.7 to 10.sup.11 ohm-cm, which has improved passivation property.
摘要翻译：将氧或氮离子束注入到半导体衬底上的多晶硅或非晶硅层或单晶器件主体或层中，至足以转换多晶硅层，非晶层或单晶器件本体或层变成具有107至1011欧姆 - 厘米电阻率的半绝缘层，其具有改善的钝化性能。

9. 发明授权

US5943602A Method to cure mobile ion contamination in semiconductor processing 失效
公开(公告)号：US5943602A
公开(公告)日：1999-08-24
申请号：US71418
申请日：1998-05-01
申请人： Randhir P. S. Thakur
发明人： Randhir P. S. Thakur
IPC分类号： H01L21/322 , H01L23/31 , H01L21/31
CPC分类号： H01L23/3171 , H01L21/3221 , H01L2924/0002 , H01L2924/19041 , Y10S148/112
摘要： A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.

10. 发明授权

US5808348A Non-uniformly nitrided gate oxide and method 失效
标题翻译：非均匀氮化栅氧化物和方法
公开(公告)号：US5808348A
公开(公告)日：1998-09-15
申请号：US884032
申请日：1997-06-27
申请人： Akira Ito , John T. Gasner
发明人： Akira Ito , John T. Gasner
IPC分类号： H01L21/28 , H01L21/336 , H01L29/51 , H01L29/76
CPC分类号： H01L21/28211 , H01L21/28176 , H01L29/518 , H01L29/66575 , Y10S148/043 , Y10S148/044 , Y10S148/112 , Y10S148/114 , Y10S438/954
摘要： A semiconductor device which includes a polysilicon gate separated from a semiconductor substrate by a re-oxidized nitrided oxide film in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform and in which the concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. Methods are disclosed of providing the non-uniform concentrations by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing process.
摘要翻译：一种半导体器件，其包括通过再氧化氮化氧化物膜从半导体衬底分离的多晶硅栅极，其中栅极下面的膜中再次氧化的氮化物的浓度不均匀，并且其中衬底中的氮浓度并且沿其界面和栅极下方的再氧化的氮化氧化物是不均匀的。公开了在氮化和再氧化过程期间通过栅极不完全屏蔽氧化物来提供不均匀浓度的方法。

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