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1. 发明授权

US08384075B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08384075B2
公开(公告)日：2013-02-26
申请号：US13495583
申请日：2012-06-13
申请人： Gee-Sung Chae , Mi-Kyung Park
发明人： Gee-Sung Chae , Mi-Kyung Park
IPC分类号： H01L29/08
CPC分类号： H01L27/1222 , B82Y10/00 , H01L27/1214 , H01L27/127 , H01L29/0665 , H01L29/0673 , H01L29/78696 , Y10S977/70 , Y10S977/732 , Y10S977/742 , Y10S977/762
摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
摘要翻译：薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

2. 发明授权

US08216889B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08216889B2
公开(公告)日：2012-07-10
申请号：US13240391
申请日：2011-09-22
申请人： Gee-Sung Chae , Mi-Kyung Park
发明人： Gee-Sung Chae , Mi-Kyung Park
IPC分类号： H01L21/00
CPC分类号： H01L27/1222 , B82Y10/00 , H01L27/1214 , H01L27/127 , H01L29/0665 , H01L29/0673 , H01L29/78696 , Y10S977/70 , Y10S977/732 , Y10S977/742 , Y10S977/762
摘要： A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
摘要翻译：薄膜晶体管包括在基板上包括多个同轴硅纳米线的多同轴硅纳米线单元，多同轴硅纳米线单元包括中心部分和中心部分的端部; 中心部分上的栅电极; 以及分别在各个端部上的源电极和漏电极，以便电连接到多同轴硅纳米线单元。

3. 发明授权

US08033091B2 Quantum tunnelling transducer device 有权
标题翻译：量子隧道传感器装置
公开(公告)号：US08033091B2
公开(公告)日：2011-10-11
申请号：US10554312
申请日：2004-04-22
申请人： Marek Michalewicz , Zygmunt Rymuza
发明人： Marek Michalewicz , Zygmunt Rymuza
IPC分类号： G01D5/14
CPC分类号： B81B3/0051 , B81B3/0021 , B81B2201/0285 , B81B2203/0109 , B81B2203/051 , G01C19/00 , G01D21/00 , G01P15/0894 , Y10S977/724 , Y10S977/725 , Y10S977/732 , Y10S977/733
摘要： A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.
摘要翻译：单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接，衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。固态铰链装置允许基板横向于细长电导体的相对平行平移。

4. 发明申请

US20100244864A1 Method for detecting electromagnetic wave 有权
标题翻译：电磁波检测方法
公开(公告)号：US20100244864A1
公开(公告)日：2010-09-30
申请号：US12584668
申请日：2009-09-09
申请人： Lin Xiao , Yu-Ying Zhang , Kai-Li Jiang , Liang Liu , Shou-Shan Fan
发明人： Lin Xiao , Yu-Ying Zhang , Kai-Li Jiang , Liang Liu , Shou-Shan Fan
IPC分类号： G01R27/08
CPC分类号： G01J5/02 , G01J5/023 , G01R21/04 , Y10S977/732 , Y10S977/742 , Y10S977/833 , Y10S977/932 , Y10S977/954
摘要： A method for detecting an electromagnetic wave includes: providing a carbon nanotube structure including a plurality of carbon nanotubes arranged along a same direction. The carbon nanotube structure is irradiated by an electromagnetic wave to be measured. The resistance of the carbon nanotube structure irradiated by the electromagnetic wave is measured.
摘要翻译：检测电磁波的方法包括：提供包括沿相同方向布置的多个碳纳米管的碳纳米管结构。碳纳米管结构被测量的电磁波照射。测量由电磁波照射的碳纳米管结构的电阻。

5. 发明授权

US07709880B2 Field effect devices having a gate controlled via a nanotube switching element 有权
标题翻译：具有通过纳米管开关元件控制的栅极的场效应器件
公开(公告)号：US07709880B2
公开(公告)日：2010-05-04
申请号：US11742290
申请日：2007-04-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/78
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/54 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L27/115 , H01L29/78 , H01L51/0048 , Y10S977/732 , Y10S977/733 , Y10S977/936
摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的栅极的场效应器件。在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

6. 发明授权

US07695811B2 On/off reversible adhesive 失效
标题翻译：开/关可逆胶粘剂
公开(公告)号：US07695811B2
公开(公告)日：2010-04-13
申请号：US11688161
申请日：2007-03-19
申请人： Michael T. Northen , Kimberly L. Turner
发明人： Michael T. Northen , Kimberly L. Turner
IPC分类号： D02G3/00
CPC分类号： B81C1/00206 , B81B2203/0361 , C09J5/00 , C09J7/00 , C09J2201/626 , Y10S977/724 , Y10S977/732 , Y10S977/762 , Y10T428/28 , Y10T428/29 , Y10T428/2913
摘要： An on/off reversible adhesive mechanism, and method for fabricating same. The adhesive mechanism is a hierarchical system comprised of a micro-scale compliant surface having one or more nano-structures thereon, wherein the compliant surface is moved by applying a magnetic field either to engage the nano-structures with an adhering surface or to remove the nano-structures from the adhering surface.
摘要翻译：开/关可逆粘合机构及其制造方法。粘合机构是由在其上具有一个或多个纳米结构的微尺度柔顺表面组成的分层系统，其中柔性表面通过施加磁场而移动，以使纳米结构与粘附表面接合或者去除来自粘结表面的纳米结构。

7. 发明申请

US20090212884A1 NANOTUBE DEVICE 有权
标题翻译： NANOTUBE设备
公开(公告)号：US20090212884A1
公开(公告)日：2009-08-27
申请号：US12035866
申请日：2008-02-22
申请人： Risto Kaunisto , Jari Kinaret , Eleanor Campbell , Andreas Isacsson , SangWook Lee , Anders Eriksson
发明人： Risto Kaunisto , Jari Kinaret , Eleanor Campbell , Andreas Isacsson , SangWook Lee , Anders Eriksson
IPC分类号： H03H9/24 , H01L21/00
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048 , H01L51/0516 , Y10S977/732 , Y10S977/742 , Y10S977/932 , Y10S977/936
摘要： A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube.
摘要翻译：一种包括构造为谐振器的纳米管，源电极，栅电极，漏电极和至少一个阻碍元件的器件，其中所述至少一个阻碍元件被配置为使由于至少源电极和纳米管。

8. 发明授权

US07414437B1 Nanomechanical computer 有权
标题翻译：纳米机械电脑
公开(公告)号：US07414437B1
公开(公告)日：2008-08-19
申请号：US11749533
申请日：2007-05-16
申请人： Robert H. Blick , Robert A. Marsland
发明人： Robert H. Blick , Robert A. Marsland
IPC分类号： H03K19/00 , H03K19/20 , H01L23/58
CPC分类号： H01H1/0094 , Y10S977/724 , Y10S977/732 , Y10S977/94
摘要： An electromechanical switching device employs a first nanoscale pillar shuttling charge between opposed charged electrodes. Motion of the first pillar is coupled to a second set of pillars providing controlled charge transfer between a second isolated set of electrodes. Standard logic elements may be constructed using this switching device.
摘要翻译：机电开关装置在相对的带电电极之间采用第一纳米级柱穿梭电荷。第一支柱的运动耦合到第二组支柱，以在第二隔离的电极组之间提供受控的电荷转移。可以使用该开关装置来构造标准逻辑元件。

9. 发明申请

US20080171219A1 NANOCOMPOSITE FILMS 失效
标题翻译：纳米复合膜
公开(公告)号：US20080171219A1
公开(公告)日：2008-07-17
申请号：US11831434
申请日：2007-07-31
申请人： David MITLIN , Colin OPHUS , Stephane EVOY , Velimir RADMILOVIC , Reza MOHAMMADI , Ken WESTRA , Nathaniel NELSON-FITZPATRICK , Zonghoon LEE
发明人： David MITLIN , Colin OPHUS , Stephane EVOY , Velimir RADMILOVIC , Reza MOHAMMADI , Ken WESTRA , Nathaniel NELSON-FITZPATRICK , Zonghoon LEE
IPC分类号： B32B15/00 , B44C1/22
CPC分类号： C23C14/165 , B81B2203/0118 , B81C1/00666 , B81C1/00674 , B82Y30/00 , C23C14/025 , Y10S977/732 , Y10S977/81 , Y10T428/12431
摘要： A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.
摘要翻译：非晶金属基体中的纳米晶体钼的薄膜组成可以通过与铝或镍共溅射Mo来形成。 NEMS悬臂可以由膜形成。该膜具有高的纳米压痕硬度和粗糙度和固有应力的降低，同时保持金属范围内的电阻率。

10. 发明申请

US20080079027A1 FIELD EFFECT DEVICES HAVING A GATE CONTROLLED VIA A NANOTUBE SWITCHING ELEMENT 有权
标题翻译：具有通过纳米管开关元件控制的门的场效应器件
公开(公告)号：US20080079027A1
公开(公告)日：2008-04-03
申请号：US11742290
申请日：2007-04-30
申请人： Claude BERTIN , Thomas RUECKES , Brent SEGAL
发明人： Claude BERTIN , Thomas RUECKES , Brent SEGAL
IPC分类号： H01L27/11 , H01L29/78
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/54 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L27/115 , H01L29/78 , H01L51/0048 , Y10S977/732 , Y10S977/733 , Y10S977/936
摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的栅极的场效应器件。在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

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