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1. 发明申请

US20100330345A1 METHODS UTILIZING SCANNING PROBE MICROSCOPE TIPS AND PRODUCTS THEREOF OR PRODUCED THEREBY 有权
标题翻译：使用扫描探针显微镜的方法及其产品或其生产方法
公开(公告)号：US20100330345A1
公开(公告)日：2010-12-30
申请号：US11933251
申请日：2007-10-31
申请人： Chad A MIRKIN , Richard Piner , Seunghun Hong
发明人： Chad A MIRKIN , Richard Piner , Seunghun Hong
IPC分类号： G01Q60/24 , B05D5/00 , C23F1/04 , B05C1/00 , B05C13/00 , G01Q80/00 , B32B3/10 , C40B40/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固体底物作为“墨水”。DPN中使用分子从SPM尖端到固体基质的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米级器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

2. 发明授权

US07429732B2 Scanning probe microscopy method and apparatus utilizing sample pitch 有权
标题翻译：扫描探针显微镜法和利用样品间距的装置
公开(公告)号：US07429732B2
公开(公告)日：2008-09-30
申请号：US11241093
申请日：2005-09-30
申请人： David A. Kneeburg , Rohit Jain , Jason R. Osborne , Wei Yao , Matthew T. Klonowski , Ingo Schmitz
发明人： David A. Kneeburg , Rohit Jain , Jason R. Osborne , Wei Yao , Matthew T. Klonowski , Ingo Schmitz
IPC分类号： G01N23/00
CPC分类号： G01Q10/06 , G01Q30/04 , G01Q60/34 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/854
摘要： The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) to perform sample measurements using a survey scan that is less than five lines, and more preferably two lines, to accurately locate a field of features of a sample. This is accomplished by selecting a step distance between adjacent lines of the survey scan that does not equal the pitch of the features in a direction orthogonal to the direction the survey scan traverses, i.e., does not equal the pitch of the features in the scan direction, XPO. The aspect ratio of the scans can also be modified to further improve sample throughput.
摘要翻译：优选实施例涉及一种操作扫描探针显微镜（SPM）的方法和装置，以使用小于五行，更优选两行的测量扫描进行样本测量，以精确地定位样本的特征场。这是通过选择在与扫描扫描方向正交的方向上不等于特征的间距的测量扫描的步距，即不等于扫描方向上的特征的间距来实现的，X PO。也可以修改扫描的宽高比以进一步提高样品通量。

3. 发明授权

US07414250B1 Cryogenic variable temperature vacuum scanning tunneling microscope 失效
标题翻译：低温可变温度真空扫描隧道显微镜
公开(公告)号：US07414250B1
公开(公告)日：2008-08-19
申请号：US11291210
申请日：2005-11-30
申请人： Mark C. Hersam , Edward T. Foley
发明人： Mark C. Hersam , Edward T. Foley
IPC分类号： G01N21/00 , G01N23/00 , G21K5/08 , G21K5/10 , H01J37/20
CPC分类号： G01N23/225 , G01Q30/10 , G01Q60/16 , Y10S977/854 , Y10S977/861 , Y10S977/871
摘要： A cryogenic variable temperature scanning tunneling microscope of novel design and component configuration, for use in conjunction with a variety of low temperature methodologies.
摘要翻译：低温可变温度扫描隧道显微镜，具有新颖的设计和组件配置，可与各种低温方法结合使用。

4. 发明申请

US20080147346A1 METHOD AND APPARATUS FOR ALIGNING PATTERNS ON A SUBSTRATE 失效
标题翻译：用于在基板上对准图案的方法和装置
公开(公告)号：US20080147346A1
公开(公告)日：2008-06-19
申请号：US11852978
申请日：2007-09-10
申请人： Raymond K. Eby , Michael Nelson , Igor Touzov
发明人： Raymond K. Eby , Michael Nelson , Igor Touzov
IPC分类号： G01B21/16
CPC分类号： G01Q40/00 , Y10S977/854
摘要： A system and method for aligning prior patterning positions formed by a first SPM tip with a second SPM tip in combination with an SPM system includes identifying first location information that includes a location of the first SPM tip and a sample reference location on an SPM sample and storing the first location information in a storage area. After replacing the first SPM tip with the second SPM tip, second location information, which includes a location of the second SPM tip and the sample reference location on the SPM sample, is identified. Displacement is calculated between the location of the second SPM tip and the first SPM tip based on the first and second location information, and either the second SPM tip or a stage supporting the SPM sample is translated to align the second SPM tip with the location of the first SPM tip in accordance with the calculated displacement.
摘要翻译：用于将由第一SPM尖端形成的先前图案形成位置与第二SPM尖端对准的系统和方法与SPM系统组合包括识别包括第一SPM尖端的位置和SPM样本上的样本参考位置的第一位置信息，以及将第一位置信息存储在存储区域中。在用第二SPM尖端替换第一SPM尖端之后，识别包括第二SPM尖端的位置和SPM样本上的样本参考位置的第二位置信息。基于第一和第二位置信息在第二SPM尖端的位置和第一SPM尖端之间计算位移，并且平移第二SPM尖端或支撑SPM样本的平台以使第二SPM尖端与第一个SPM尖端按照计算出的位移。

5. 发明申请

US20050181132A1 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US20050181132A1
公开(公告)日：2005-08-18
申请号：US10937877
申请日：2004-09-10
申请人： Chad Mirkin , Richard Piner , Seunghun Hong
发明人： Chad Mirkin , Richard Piner , Seunghun Hong
IPC分类号： B05D1/00 , B05D1/18 , B05D1/26 , B82B3/00 , G01Q10/00 , G01Q60/00 , G01Q70/06 , G01Q70/16 , G01Q80/00 , G03F7/00 , G03F7/16 , G03F7/20 , H01L21/027 , B05D5/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substratte as “ink.” Capillary transport of molecules from the SPM tip to thee solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the facrication of a variety of microscale and nanoscale devices. The invention also provices substrates patterened by DPN, including submirocmeter combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compoind being selected so that AFM imaging perfromed using the coated AFM tipn is improved compared to AFM imaging preformed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基质为“墨”。在DPN中使用分子从SPM尖端到固体底物的毛细管转运，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微米级和纳米尺寸的器件。本发明还提供了DPN的基板，其中包括submirocmeter组合阵列，以及用于执行DPN的套件，设备和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水化合物涂覆AFM尖端，选择疏水性组合物，使得与使用未涂覆的AFM尖端预成型的AFM成像相比，使用涂覆的AFM尖端的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

6. 发明授权

US06930502B2 Method using conductive atomic force microscopy to measure contact leakage current 失效
标题翻译：使用导电原子力显微镜测量接触漏电流的方法
公开(公告)号：US06930502B2
公开(公告)日：2005-08-16
申请号：US10734020
申请日：2003-12-10
申请人： Jon C. Lee , Jung-Hsiang Chuang
发明人： Jon C. Lee , Jung-Hsiang Chuang
IPC分类号： G01Q30/20 , G01Q60/00 , G01R31/02 , G01R31/26 , G01R31/265 , H01L21/66
CPC分类号： G01R31/2648 , G01Q60/40 , G01R31/265 , Y10S977/854
摘要： A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.
摘要翻译：用于测量形成在基板上或基板上的半导体器件的触点的漏电的方法，包括：用导电原子力显微镜的探针扫描接触; 在所述基板和所述探针的导电末端之间施加直流电压; 以及响应于所施加的DC电压，测量通过所述接触件与所述衬底的电流的值。

7. 发明申请

US20030115939A1 Scanning probe microscope 失效
标题翻译：扫描探针显微镜
公开(公告)号：US20030115939A1
公开(公告)日：2003-06-26
申请号：US10193237
申请日：2002-07-12
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Yukari Imai , Mari Tsugami , Hitoshi Maeda , Tohru Koyama
IPC分类号： H01J040/00
CPC分类号： G01Q20/02 , G01Q60/30 , Y10S977/854 , Y10S977/87
摘要： A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample. Laser light (2) emitted therefrom should be of wavelength larger in value than a wavelength A calculated as follows: nullnullhnullc/Eg where h is Planck's constant, c represents speed of light and Eg represents band gap. When the semiconductor as a sample is silicon, the band gap thereof is 1.12 eV, thus calculating the wavelength null at 1.107 nullm. The laser diode (1a) should be such that the laser light (2) emitted therefrom is of wavelength larger in value than null. It is therefore allowed to avoid emission of light higher in energy level than the band gap of silicon as a sample and eventually, avoid generation of photoelectric current in the sample.
摘要翻译：扫描探针显微镜包括作为光源的激光二极管（1a），用于发射能量水平低于作为样品的半导体的带隙的光。从其发射的激光（2）的波长应大于波长A的值，计算如下：lambd = h.c / Eg其中h为普朗克常数，c表示光速，Eg表示带隙。当作为样品的半导体是硅时，其带隙为1.12eV，从而计算1.107μm的波长长度。激光二极管（1a）应该使得从其发射的激光（2）的值比羔羊的波长大。因此，允许避免发射能量水平高于硅作为样品的带隙，并且最终避免在样品中产生光电流。

8. 发明申请

US20020063212A1 Methods utilizing scanning probe microscope tips and products therefor or produced thereby 有权
标题翻译：方法利用扫描探针显微镜尖端及其产品或由此产生
公开(公告)号：US20020063212A1
公开(公告)日：2002-05-30
申请号：US09866533
申请日：2001-05-24
发明人： Chad A. Mirkin , Richard Piner , Seunghun Hong
IPC分类号： G21K007/00 , G01N023/00
CPC分类号： B82B3/00 , B05D1/007 , B05D1/185 , B05D1/26 , G01Q80/00 , G03F7/0002 , G03F7/165 , Y10S977/849 , Y10S977/853 , Y10S977/854 , Y10S977/855 , Y10S977/856 , Y10S977/857 , Y10S977/86 , Y10S977/88 , Y10S977/884 , Y10S977/885 , Y10S977/886 , Y10S977/895 , Y10T428/24802
摘要： The invention provides a lithographic method referred to as nulldip pennull nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a nullpen,null a solid-state substrate (e.g., gold) as nullpaper,null and molecules with a chemical affinity for the solid-state substrate as nullink.null Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air. The method comprises coating an AFM tip with a hydrophobic compound, the hydrophobic compound being selected so that AFM imaging performed using the coated AFM tip is improved compared to AFM imaging performed using an uncoated AFM tip. Finally, the invention provides AFM tips coated with the hydrophobic compounds.
摘要翻译：本发明提供了称为“浸笔”纳米光刻（DPN）的光刻方法。 DPN使用扫描探针显微镜（SPM）尖端（例如，原子力显微镜（AFM）尖端）作为“笔”，固态基底（例如，金）作为“纸”，并且具有化学亲和力的分子固态基板为“墨水”。在DPN中使用分子从SPM尖端到固体基质的毛细管传输，以直接写入由亚微米尺寸的相对小的分子集合组成的图案，使得DPN可用于制造各种微尺寸和纳米尺寸的器件。本发明还提供由DPN图案化的衬底，包括亚微米组合阵列，以及用于执行DPN的试剂盒，装置和软件。本发明还提供了一种在空气中进行AFM成像的方法。该方法包括用疏水性化合物涂覆AFM尖端，选择疏水性化合物，使得与使用未涂覆的AFM尖端进行的AFM成像相比，使用涂覆的AFM尖端进行的AFM成像得到改善。最后，本发明提供涂覆有疏水化合物的AFM尖端。

9. 发明授权

US06320403B1 Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material 失效
标题翻译：确定经处理的半导体材料表面的掺杂浓度和缺陷分布的方法
公开(公告)号：US06320403B1
公开(公告)日：2001-11-20
申请号：US09131588
申请日：1998-08-10
申请人： Sunil N. Shabde , Yowjuang William Liu , Ting Yiu Tsui
发明人： Sunil N. Shabde , Yowjuang William Liu , Ting Yiu Tsui
IPC分类号： G01R3102
CPC分类号： G01R31/2648 , Y10S977/854
摘要： A method (100) of determining a doping type and a doping concentration of a semiconductor material (101) includes the steps of moving carriers (103) in the material, wherein a number of carriers is a function of the doping concentration of the material (101) and a type of carriers is a function of the doping type of the material (101). The carriers are deflected (130) toward a surface (110) of the material (101) and an accumulated charge profile on the surface of the material, due to the deflected carriers, is detected (140) and used to calculate (180) the doping concentration across a surface (110) of the material (101).
摘要翻译：确定半导体材料（101）的掺杂类型和掺杂浓度的方法（100）包括在材料中移动载流子（103）的步骤，其中多个载流子是材料的掺杂浓度的函数（ 101），并且载体的类型是材料（101）的掺杂类型的函数。所述载体朝向所述材料（101）的表面（110）偏转（130），并且由于所述偏转的载体检测到所述材料的所述表面上的累积的电荷分布（140）并用于计算（180）所述材料穿过材料（101）的表面（110）的掺杂浓度。

10. 发明授权

US06201401B1 Method for measuring the electrical potential in a semiconductor element 有权
标题翻译：用于测量半导体元件中的电位的方法
公开(公告)号：US06201401B1
公开(公告)日：2001-03-13
申请号：US09197611
申请日：1998-11-23
申请人： Louis C. Hellemans , Thomas Trenkler , Peter De Wolf , Wilfried Vandervorst
发明人： Louis C. Hellemans , Thomas Trenkler , Peter De Wolf , Wilfried Vandervorst
IPC分类号： G01R3126
CPC分类号： G01R31/2648 , G01Q60/30 , G01R29/12 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/014 , Y10S977/854 , H01L2924/00
摘要： Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.
摘要翻译：通过在半导体元件上施加一个或多个电压来测量半导体元件中的电位，使用扫描接近显微镜将至少一个导体与半导体元件接触，同时在半导体元件中注入基本零电流的导体测量导体中的电位，同时在半导体元件中与导体注入大致零电流，改变导体的位置，并重复测量和改变步骤。

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