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    • 7. 发明授权
    • Integrated cantilever switch
    • 集成悬臂开关
    • US09466452B1
    • 2016-10-11
    • US14675359
    • 2015-03-31
    • STMICROELECTRONICS, INC.
    • Qing LiuJohn H. Zhang
    • H01H11/00H01H59/00
    • H01L29/84B82B3/00H01H1/0094H01H49/00H01H50/005H01H59/0009H01H2001/0084H01L21/02532H01L21/30608
    • An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm2.
    • 纳米级机电开关形式的集成晶体管消除了CMOS电流泄漏并提高了开关速度。 纳米尺度的机电开关具有从衬底的一部分延伸到空腔中的半导体悬臂。 悬臂响应于施加到晶体管栅极的电压而弯曲,从而在栅极下形成导电沟道。 当设备关闭时,悬臂返回到静止位置。 悬臂的这种运动打破了电路,恢复了阻挡电流的门下方的空隙,从而解决了泄漏问题。 纳米机电开关的制造与现有的CMOS晶体管制造工艺兼容。 通过掺杂悬臂并使用背偏压和金属悬臂尖,可以进一步提高开关的灵敏度。 纳米机电开关的占地面积可以小至0.1×0.1μm2。