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1. 发明授权

US11143962B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method 有权
公开(公告)号：US11143962B2
公开(公告)日：2021-10-12
申请号：US15755972
申请日：2016-08-25
申请人： Mitsubishi Gas Chemical Company, Inc.
发明人： Takumi Toida , Takashi Makinoshima , Takashi Sato , Masatoshi Echigo
IPC分类号： G03F7/16 , G03F7/11 , C08G61/00 , C07C37/72 , C07C39/12 , C07C39/14 , G03F7/30 , G03F7/36 , C07C69/96 , C07D311/78 , H01L21/027 , G03F7/09 , G03F7/039 , C07D405/04 , C08G61/12 , C09D165/00 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/311 , H01L21/3213 , H01L21/768 , C08G8/14 , C08G8/18 , C08G8/08
摘要： The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, provided that at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1.

2. 发明授权

US11137686B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method 有权
公开(公告)号：US11137686B2
公开(公告)日：2021-10-05
申请号：US15756463
申请日：2016-08-25
申请人： Mitsubishi Gas Chemical Company, Inc.
发明人： Takumi Toida , Takashi Makinoshima , Takashi Sato , Masatoshi Echigo
IPC分类号： G03F7/16 , G03F7/11 , G03F7/004 , G03F7/30 , C07D405/04 , G03F7/09 , C07C39/14 , C07C39/12 , C08G61/12 , C09D165/00 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/027
摘要： The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.

3. 发明授权

US10241412B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film 有权
公开(公告)号：US10241412B2
公开(公告)日：2019-03-26
申请号：US15915748
申请日：2018-03-08
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Hiroko Nagai , Takeru Watanabe , Daisuke Kori , Tsutomu Ogihara
IPC分类号： G03F7/11 , G03F7/09 , C07C39/14 , C07C39/15 , C07C49/83 , C08F220/28 , C08F220/32 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L21/266 , H01L21/308 , H01L21/311
摘要： Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

4. 发明申请

US20180074402A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN 审中-公开
公开(公告)号：US20180074402A1
公开(公告)日：2018-03-15
申请号：US15560458
申请日：2016-03-02
申请人： Mitsubishi Gas Chemical Company, Inc.
发明人： Takumi TOIDA , Masatoshi ECHIGO , Takashi SATO , Youko SHIMIZU
IPC分类号： G03F7/004 , G03F7/038 , G03F7/20 , G03F7/32 , C07C39/14 , C07C39/17 , C07C39/42 , C07C39/225 , C07C37/20 , C07D311/78 , C07D311/96
CPC分类号： G03F7/0045 , C07B61/00 , C07C37/20 , C07C39/14 , C07C39/17 , C07C39/225 , C07C39/42 , C07D311/78 , C07D311/92 , C07D311/96 , C08G61/12 , G03F7/004 , G03F7/038 , G03F7/0382 , G03F7/2039 , G03F7/327
摘要： The present invention is a compound represented by the following general formula (1).

5. 发明授权

US09880469B2 Resins for underlayers 有权
公开(公告)号：US09880469B2
公开(公告)日：2018-01-30
申请号：US14792968
申请日：2015-07-07
申请人： Rohm and Haas Electronic Materials LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Emad Aqad , Mingqi Li , Shintaro Yamada , Sung Wook Cho
IPC分类号： G03F7/09 , G03F7/36 , G03F7/30 , C07C39/17 , C07C39/14 , C07D213/16 , C08G8/04 , C08G8/10 , C08G12/34 , C08G12/26 , C08G12/08 , C09D161/06 , C09D161/22 , C08G8/08
CPC分类号： G03F7/094 , C07C39/14 , C07C39/17 , C07C2603/18 , C07C2603/24 , C07C2603/40 , C07C2603/42 , C07C2603/50 , C07C2603/52 , C07D213/16 , C08G8/04 , C08G8/08 , C08G8/10 , C08G12/08 , C08G12/26 , C08G12/34 , C09D161/06 , C09D161/22 , C09D161/26 , G03F7/091 , G03F7/30 , G03F7/36
摘要： Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.

6. 发明申请

US20170334817A1 PHENOLIC HYDROXYL-CONTAINING COMPOUND, COMPOSITION CONTAINING THE SAME, AND CURED FILM OF THE COMPOSITION 审中-公开
公开(公告)号：US20170334817A1
公开(公告)日：2017-11-23
申请号：US15532272
申请日：2015-11-19
申请人： DIC Corporation
发明人： Tomoyuki Imada , Norio Nagae
IPC分类号： C07C39/14 , G03F7/039 , C08G65/38
CPC分类号： C07C39/14 , C07C39/17 , C07C2603/92 , C08G8/04 , C08G65/38 , C09D161/12 , G03F7/0226 , G03F7/039 , G03F7/091 , G03F7/094 , G03F7/11
摘要： A phenolic hydroxyl-containing compound is provided. The compound dissolves well in solvents and can be formulated into compositions that give coatings superior in thermal decomposition resistance, alkali developability, resolution, and dry-etch resistance. Specifically, the compound is a phenolic hydroxyl-containing calixarene represented by structural formula (1): (where A is a structural unit including a dihydroxynaphthalene- or naphthol-derived structure optionally with a substituent alkyl, alkoxy, aryl, or aralkyl group or halogen atom on the aromatic rings and a methylene group optionally having an alkyl or aryl group in place of one of the hydrogen atoms) and obtained using a dihydroxynaphthalene in combination with a naphthol, with the total repeat number p being an integer of 2 to 10.

7. 发明申请

US20160176840A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM 有权
标题翻译：抗蚀剂组合物，用于形成耐药性图案的方法，用于组合物中的聚苯醚化合物和可由其衍生的醇溶液
公开(公告)号：US20160176840A1
公开(公告)日：2016-06-23
申请号：US15005177
申请日：2016-01-25
申请人： Mitsubishi Gas Chemical Company, Inc.
发明人： Masatoshi ECHIGO , Masako YAMAKAWA
IPC分类号： C07D311/78 , C07C39/14 , G03F7/004
CPC分类号： C07C37/20 , C07C39/14 , C07C39/17 , C07C39/225 , C07C2101/14 , C07C2103/18 , C07C2103/26 , C07C2103/50 , C07C2601/10 , C07C2601/14 , C07C2603/18 , C07C2603/26 , C07C2603/50 , C07D311/78 , C07D311/96 , G03F7/0045 , G03F7/031 , G03F7/038 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2037 , G03F7/32 , G03F7/327 , G03F7/38 , C07C39/16
摘要： A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
摘要翻译：含有由通式（1）或（2）表示的化合物的抗蚀剂组合物，使用该组合物形成抗蚀剂图案的方法，用于该组合物的多酚化合物和可衍生的醇化合物。

8. 发明申请

US20150008212A1 MONOMER FOR HARDMASK COMPOSITION, HARDMASK COMPOSITION INCLUDING MONOMER, AND PATTERN FORMING METHOD USING HARDMASK COMPOSITION 有权
标题翻译： HARDMASK组合物的单体，包括单体的HARDMASK组合物和使用HARDMASK组合物的图案形成方法
公开(公告)号：US20150008212A1
公开(公告)日：2015-01-08
申请号：US14365751
申请日：2012-11-21
申请人： Yoo-Jeong Choi , Hyo-Young Kwon , Youn-Jin Cho , Yun-Jun Kim , Young-Min Kim , Yong-Woon Yoon , Chung-Heon Lee
发明人： Yoo-Jeong Choi , Hyo-Young Kwon , Youn-Jin Cho , Yun-Jun Kim , Young-Min Kim , Yong-Woon Yoon , Chung-Heon Lee
IPC分类号： C07C39/14 , B05D3/06 , B05D1/00 , B05D3/02 , C09D173/00 , B05D3/00
CPC分类号： C07C39/14 , B05D1/005 , B05D3/007 , B05D3/0254 , B05D3/06 , C07C39/12 , C07C2603/50 , C07C2603/54 , C09D173/00 , G03F7/004 , G03F7/0752 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
摘要： Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.
摘要翻译：公开了由化学式1表示的硬掩模组合物的单体，包含单体的硬掩模组合物和形成图案的方法。

9. 发明授权

US08816135B2 Trisphenol compound 有权
标题翻译：三酚化合物
公开(公告)号：US08816135B2
公开(公告)日：2014-08-26
申请号：US13395062
申请日：2010-09-09
申请人： Akira Yoshitomo , Shihoko Nakano
发明人： Akira Yoshitomo , Shihoko Nakano
IPC分类号： C07C39/14 , C07C39/15 , C07C37/20
CPC分类号： C07C39/15 , C07C37/20
摘要： A trisphenol compound is expressed by formula (1), wherein R represents an alkyl group or alkoxyl group with 1 to 8 carbon atoms, phenyl group or hydroxyl group; R1 represents an alkyl group or alkoxyl group with 1 to 8 carbon atoms, or phenyl group; R2 represents an alkyl group or alkoxyl group with 1 to 8 carbon atoms; R3 represents a hydrogen atom or alkyl group with 1 to 8 carbon atoms; a represents 0, 1, 2, or 3; b represents 1 or 2; and c and d represent 0, 1, 2, 3, or 4; where the sum of b and c is 5 or less; R's may be either the same or different when a is 2 or more; R1's may be either the same or different when c is 2 or more; and R2's may be either the same or different when d is 2 or more.
摘要翻译：三酚化合物由式（1）表示，其中R表示烷基或具有1至8个碳原子的烷氧基，苯基或羟基; R1表示碳原子数为1〜8的烷基或烷氧基，或苯基。 R2表示碳原子数为1〜8的烷基或烷氧基， R3表示氢原子或碳原子数为1〜8的烷基; a表示0,1,2或3; b表示1或2; 和c和d代表0，1，2，3或4; 其中b和c之和为5或更小; 当a为2以上时，R可以相同或不同; 当c为2以上时，R1可以相同或不同; 当d为2或更多时，R2的可能相同或不同。

10. 发明申请

US20080214507A1 MONO-AND-DI-PHOSPHATES OF 3-(3-FLUORO-4-HYDROXY-PHENYL)-7-HYDROXY-NAPHTHALENE-1-CARBONITRILE 失效
标题翻译： 3-（3-氟-4-羟基 - 苯基）-7-羟基萘-1-酮的单磷酸盐和磷酸盐
公开(公告)号：US20080214507A1
公开(公告)日：2008-09-04
申请号：US12034052
申请日：2008-02-20
申请人： Mahdi B. FAWZI , Parimal R. DESAI , Tianmin ZHU
发明人： Mahdi B. FAWZI , Parimal R. DESAI , Tianmin ZHU
IPC分类号： A61K31/66 , C07C39/14 , A61K31/05 , A61P19/02 , C07F9/02
CPC分类号： C07F9/12 , C07F9/093
摘要： Compounds of formula II wherein each R1 and R2 is independently selected from H and —P(O)(R3)(R4), provided that at least one of R1 and R2 is —P(O)(R3)(R4); each R3 and R4 is independently selected from the group consisting of H, —OH, C1-C6 alkyl and C1-C6 alkoxy; or a pharmaceutically acceptable salt thereof. Pharmaceutical compositions comprising a compound of formula II, and methods of administering such compounds and compositions.
摘要翻译：其中每个R 1和R 2各自独立地选自H和-P（O）（R 3）（R 3） SUP> 4 ），条件是R 1和R 2中的至少一个是-P（O）（R 3））（R 4+）; 每个R 3和R 4独立地选自H，-OH，C 1 -C 6烷基， C 1 -C 6烷基和C 1 -C 6烷氧基; 或其药学上可接受的盐。包含式II化合物的药物组合物，以及施用此类化合物和组合物的方法。

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