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1. 发明授权

US11235498B2 Manufacturing method of metal-polymer resin bonded component 有权
公开(公告)号：US11235498B2
公开(公告)日：2022-02-01
申请号：US16636387
申请日：2018-08-21
申请人： PLASTAL CO., LTD.
发明人： Jae Ho Kim
IPC分类号： B29C45/14 , C23F1/16 , C23F1/32 , C23G1/14 , C25D11/10 , C25D11/18 , C25D11/16 , B29K705/00
摘要： The present invention relates to a method of manufacturing a metal-polymer resin bonded body, including: degreasing metal using a degreasing solution; etching the metal using an etching solution; electrolyzing the metal using an electrolyte solution; and performing a polymer resin injection to bond a polymer resin to the metal, wherein the electrolyte solution includes a compound containing distilled water, oxalic acid, sulfuric acid, and carboxylic acid.

2. 发明授权

US09903020B2 Generation of compact alumina passivation layers on aluminum plasma equipment components 有权
公开(公告)号：US09903020B2
公开(公告)日：2018-02-27
申请号：US14486105
申请日：2014-09-15
申请人： Applied Materials, Inc.
发明人： Sung Je Kim , Laksheswar Kalita , Yogita Pareek , Ankur Kadam , Prerna Sonthalia Goradia , Bipin Thakur , Dmitry Lubomirsky
IPC分类号： C23C22/48 , C23C22/56 , C23C22/66 , C23C14/22 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/67 , H01L21/673 , C23F1/32 , C23F1/36 , C23F1/16 , C23F1/20
CPC分类号： C23C22/66 , C23C14/22 , C23C16/45525 , C23C16/45527 , C23C16/50 , C23C22/56 , C23F1/16 , C23F1/20 , C23F1/32 , C23F1/36 , H01J37/32009 , H01J37/3244 , H01J37/32532 , H01J37/3255 , H01L21/67069 , H01L21/67248 , H01L21/67253 , H01L21/67306 , Y10T428/24322 , Y10T428/24355
摘要： A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.

3. 发明申请

US20100126961A1 Polysilicon Planarization Solution for Planarizing Low Temperature Poly-Silicon Thin Film Panels 审中-公开
标题翻译：用于平面化低温多晶硅薄膜面板的多晶硅平面化解决方案
公开(公告)号：US20100126961A1
公开(公告)日：2010-05-27
申请号：US12596921
申请日：2008-02-19
申请人： Sang In Kim , Seong Jin Hong
发明人： Sang In Kim , Seong Jin Hong
IPC分类号： C23F1/32 , C09K13/02
CPC分类号： B81C1/00611 , B81C2201/0126 , C09K13/02 , H01L21/32134 , H01L29/6675
摘要： A highly aqueous, strongly basic planarizing solution and a process for its use to reducing or essentially eliminating protrusions or projections extending generally upwardly from a generally planar surface of polysilicon film produced by Low Temperature Poly Si (LTPS) annealing a film of amorphous silicon deposited on a substrate; the process including contacting the surface of the generally planar polysilicon film with the highly aqueous, strongly basic solution for a time sufficient to selectively etch the protrusions or projections from the surface of the generally planar polysilicon film without any significant etching of the generally planar polysilicon film, said highly aqueous, strongly basic solution being a solution having a pH of 12 or higher and comprising water, at least one strong base, and at least one etch rate control agent.
摘要翻译：高度水性，强碱性的平面化溶液和用于减少或基本上消除从通过低温多晶硅（LTPS）生产的多晶硅膜的大致平坦表面大致向上延伸的突起或突起的方法，退火沉积在非晶硅上的非晶硅膜底物; 该方法包括使大体上平坦的多晶硅膜的表面与高水溶液，强碱性溶液接触一段时间，足以从大体上平坦的多晶硅膜的表面选择性地蚀刻突起或突起，而无需大致平坦的多晶硅膜的显着蚀刻所述高含水强碱性溶液是pH为12或更高的溶液，其包含水，至少一种强碱和至少一种蚀刻速率控制剂。

4. 发明授权

US5919311A Control of SiO.sub.2 etch rate using dilute chemical etchants in the presence of a megasonic field 失效
标题翻译：在存在兆声波场的情况下，使用稀释的化学蚀刻剂控制SiO 2蚀刻速率
公开(公告)号：US5919311A
公开(公告)日：1999-07-06
申请号：US749906
申请日：1996-11-15
申请人： Larry Wayne Shive , Igor Jan Malik
发明人： Larry Wayne Shive , Igor Jan Malik
IPC分类号： C23F1/32 , H01L21/306 , H01L21/311 , B08B3/08 , B08B3/12
CPC分类号： H01L21/02052 , H01L21/31111
摘要： Processes for cleaning a silicon body and for controllably decreasing the thickness of a silicon dioxide layer overlying a silicon substrate are disclosed. The processes comprise chemically etching a silicon dioxide layer with a dilute etchant in the presence of a megasonic field. The concentration of the etchant is preferably less than its diffusion-rate-limiting threshold concentration at a given temperature. When aqueous alkaline hydroxyl ion etchants are employed, the concentration of etchant is preferably less than about 300 ppm by weight relative to water. The etching is discontinued before the silicon substrate is exposed to the etchant. The etch rate is controlled to within about 2.times.10.sup.-5 .mu.m/min (0.2 .ANG./min) of a target etch rate which ranges from about 3.times.10.sup.-5 .mu.m/min (0.3 .ANG./min) to about 4.times.10.sup.-4 .mu.m/min (4.0 .ANG./min). A simpler, more cost-effective chemical process for robustly cleaning silicon bodies or for producing very thin gate oxides is achieved.
摘要翻译：公开了用于清洁硅体并可控地降低覆盖在硅衬底上的二氧化硅层的厚度的工艺。这些方法包括在存在兆声波场的情况下用稀释的蚀刻剂化学蚀刻二氧化硅层。腐蚀剂的浓度优选小于在给定温度下的扩散限制阈值浓度。当使用含水的碱性羟基离子蚀刻剂时，腐蚀剂的浓度优选相对于水小于约300ppm。在硅衬底暴露于蚀刻剂之前，中断蚀刻。蚀刻速率控制在目标蚀刻速率的约2×10 -5 m / min（0.2安培/分钟）内，范围为约3×10-5μm/分钟（0.3安培/分钟）至约4×10 -4微米 /分钟（4.0安培/分钟）。实现了一种更简单，更具成本效益的化学工艺，用于强力清洁硅体或生产非常薄的栅极氧化物。

5. 发明授权

US4747907A Metal etching process with etch rate enhancement 失效
标题翻译：蚀刻速率提高的金属蚀刻工艺
公开(公告)号：US4747907A
公开(公告)日：1988-05-31
申请号：US924702
申请日：1986-10-29
申请人： John Acocella , Lawrence D. David
发明人： John Acocella , Lawrence D. David
IPC分类号： C23F1/16 , C23F1/28 , C23F1/32 , H01L21/308 , C23F1/00
CPC分类号： C23F1/32 , C23F1/16
摘要： A metal etching process involving an oxidation-reduction reaction where the metal being etched is oxidized and the active ingredient in the etchant solution is reduced, incorporates contacting said metal with an etching solution containing an active ingredient selected from the group consisting of ferric ions, ferricyanide ions, ceric ions, chromate ions, dichromate ions, and iodine, and introducing ozone into said etching solution to rejuvenate and agitate the solution.

6. 发明授权

US4564428A Ammoniated etching solution and process for its regeneration utilizing ammonium chloride addition 失效
标题翻译：氨化蚀刻溶液及其利用氯化铵添加的再生方法
公开(公告)号：US4564428A
公开(公告)日：1986-01-14
申请号：US624585
申请日：1984-06-26
申请人： Leander Furst , Walter Holzer , Bertel Kastening
发明人： Leander Furst , Walter Holzer , Bertel Kastening
IPC分类号： C25F7/02 , C23F1/32 , C23F1/34 , C23F1/46 , C25C1/12
CPC分类号： C23F1/34 , C23F1/46
摘要： The addition of a small quantity of ammonium chloride to an ammonium sulf etching solution results in shortening the regeneration time of the spent etching solution when air or oxygen is bubbled through it to reoxidize it, and it also results in accelerating the etching rate. The extent of this improvement deteriorates with increasing chlorine ion content, disappearing when the chlorine ion content substantially exceeds 0.4% by weight of the solution and still greater chlorine ion additions are distinctly undesirable. The electrolysis of the etching solution to remove etched-away metal cathodically produces enough oxygen at the anode to prevent any substantial evolution of chlorine from the electrolytic action on the small chlorine ion content.
摘要翻译：向硫酸铵蚀刻溶液中加入少量氯化铵可以缩短废气蚀刻溶液的再生时间，当空气或氧气通过氧化硅再次氧化时，可以缩短再生时间，同时也可以提高蚀刻速度。这种改进的程度随着氯离子含量的增加而降低，当氯离子含量基本上超过溶液的重量的0.4％时，消失，而且更大的氯离子添加显然是不期望的。用阴极去除蚀刻掉的金属的蚀刻溶液的电解在阳极产生足够的氧，以防止氯对氯离子含量小的电解作用的显着释放。

7. 发明授权

US3717520A Composition and method for selectively stripping nickel and/or copper 失效
标题翻译：选择性剥离镍和/或铜的组合物和方法
公开(公告)号：US3717520A
公开(公告)日：1973-02-20
申请号：US3717520D
申请日：1971-02-09
申请人： ENTHONE
发明人： BRINDISI F
IPC分类号： C23F1/32 , C23F1/44 , C23G5/00
CPC分类号： C23F1/44 , C23F1/34 , C23F1/40
摘要： STRIPPING SOLUTIONS FOR SELECTIVELY DISSOLVING NICKEL AND/OR COPPER FROM METAL AND PLASTIC SUBSTRATES AND WHICH ARE ALKALINE SOLUTIONS COMPRISING: (A) A NITRO-SUBSTITUTED AROMATIC COMPOUND HAVING AT LEAST ONE -MO2 GROUP ATTACHED TO THE AROMATIC RING AND A WATER-SOLUBILIZING SUBSTITUENT ALSO ATTACHED TO THE AROMATIC RING; (B) ELEMENTAL SULFUR; (C) AN ALKALI PHOSPHATE; (D) AN ALKALI CHLORIDE; (E) AN ALKYLENE POLYAMINE; AND (F) A CORROSION ATTACK INHIBITOR.

8. 发明授权

US2987426A Alkali baths for metal treatment 失效
标题翻译：碱浴用于金属处理
公开(公告)号：US2987426A
公开(公告)日：1961-06-06
申请号：US71111158
申请日：1958-01-27
申请人： ICI LTD
发明人： ELLIOTT SHAW RICHARD
IPC分类号： B01J19/16 , C23C22/73 , C23F1/32 , C23G1/14
CPC分类号： B01J19/16 , C23C22/73 , C23F1/32 , C23G1/14

9. 发明授权

US11574813B2 Atomic layer etching 有权
公开(公告)号：US11574813B2
公开(公告)日：2023-02-07
申请号：US17114264
申请日：2020-12-07
申请人： ASM IP Holding B.V.
发明人： Charles Dezelah , Varun Sharma
IPC分类号： H01L21/3065 , C23F1/32 , H01J37/32
摘要： Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

10. 发明授权

US11219948B2 Method allowing the removal of oxides present on the surface of nodules of a metal powder before using same in an industrial method 有权
公开(公告)号：US11219948B2
公开(公告)日：2022-01-11
申请号：US15743325
申请日：2016-07-08
申请人： ADDUP
发明人： Thierry Mazet
IPC分类号： C23F1/32 , B22F1/00 , C23G5/00 , B22F12/00 , C09K13/08 , B33Y30/00 , B22F10/10
摘要： A method and a device are provided for removing surface oxides on nodules of a metal powder, before the nodules of the metal powder are used in an industrial process in which the nodules of the metal powder are assembled via a solid route or via a liquid route. In the method and the device, the surface oxides are stripped from the nodules of the metal powder by bringing the nodules of the metal powder into contact with vapour from at least one of: sublimation of a stripping solid material, and sublimation of the stripping solid material followed by a chemical transformation of a product of the sublimation.

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