专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10155921B2 Removal composition for selectively removing hard mask and methods thereof 有权
公开(公告)号：US10155921B2
公开(公告)日：2018-12-18
申请号：US15028501
申请日：2014-10-09
申请人： EKC TECHNOLOGY INC
发明人： Hua Cui
IPC分类号： C09K13/06 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , C11D3/39 , C11D7/26 , C11D7/32 , B08B3/08 , C11D7/04 , B08B3/10 , C11D3/20 , H01L21/768 , H01L21/311
摘要： The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

2. 发明授权

US10005991B2 Removal composition for selectively removing hard mask and methods thereof 有权
公开(公告)号：US10005991B2
公开(公告)日：2018-06-26
申请号：US15028573
申请日：2014-10-09
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , EKC TECHNOLOGY INC
发明人： Hua Cui
IPC分类号： C11D7/32 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/3213 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , C11D3/39 , C11D7/26 , B08B3/08 , C11D7/04 , B08B3/10 , C11D3/20 , H01L21/768 , H01L21/311
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , C11D3/2082 , C11D3/3942 , C11D3/3947 , C11D7/04 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C23F1/18 , C23F1/26 , C23F1/28 , C23F1/34 , C23F1/38 , C23F1/40 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/02063 , H01L21/31111 , H01L21/31144 , H01L21/32134 , H01L21/76807 , H01L21/76814
摘要： The present disclosure relates to a method for removing a hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W from a semiconductor substrate. The method comprising contacting the semiconductor substrate with a removal composition. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

3. 发明授权

US09797048B2 Stripping solution for zinc/nickel alloy plating from metal substrate 有权
公开(公告)号：US09797048B2
公开(公告)日：2017-10-24
申请号：US14674570
申请日：2015-03-31
申请人： THE BOEING COMPANY
发明人： Lawrence M Lawless
IPC分类号： C23F1/40 , C23F1/32 , C23F1/34 , C23F1/36 , C23F1/44 , C23G1/14 , C23G1/19
CPC分类号： C23F1/40 , C23F1/44
摘要： The present disclosure relates generally to the field of electroplating and electroless plating. More specifically, the present disclosure relates to plating solutions and plating removal/stripping solutions for stripping zinc/nickel alloy plating from substrates.

4. 发明授权

US09441303B2 Microetching solution for copper, replenishment solution therefor and method for production of wiring board 有权
标题翻译：铜的微蚀刻解决方案及其配线方法
公开(公告)号：US09441303B2
公开(公告)日：2016-09-13
申请号：US14110535
申请日：2013-03-04
申请人： MEC COMPANY LTD.
发明人： Masayo Kurii , Kiyoto Tai , Mami Nakamura
IPC分类号： C09G1/04 , C09K13/00 , C23F1/18 , H05K3/38 , H05K3/02 , C23F1/34
CPC分类号： C23F1/18 , C23F1/34 , H05K3/0085 , H05K3/022 , H05K3/383 , H05K2203/0307 , H05K2203/0789
摘要： Disclosed is a microetching solution for copper, a replenishment solution therefor and a method for production of a wiring board. The microetching solution of the present invention consists of an aqueous solution containing a cupric ion, an organic acid, a halide ion, an amino group-containing compound having a molecular weight of 17 to 400 and a polymer. The polymer is a water-soluble polymer including a polyamine chain and/or a cationic group and having a weight average molecular weight of 1000 or more. When a concentration of the amino group-containing compound is A % by weight and a concentration of the polymer is B % by weight, a value of A/B of the microetching solution of the present invention is 50 to 6000. According to the present invention, an adhesion between copper and a resin or the like may be maintained even with a low etching amount.
摘要翻译：公开了一种用于铜的微蚀刻解决方案及其补充解决方案以及一种生产布线板的方法。本发明的微蚀刻溶液由含有铜离子，有机酸，卤化物离子，分子量为17〜400的含氨基化合物和聚合物的水溶液组成。聚合物是包含多胺链和/或阳离子基团并且重均分子量为1000以上的水溶性聚合物。当含氨基化合物的浓度为A％（重量）且聚合物的浓度为B％（重量）时，本发明的微蚀刻溶液的A / B值为50〜6000。即使在低蚀刻量的情况下也可以保持铜与树脂等之间的粘合。

5. 发明申请

US20110287223A1 METALLIC ARTICLES WITH HYDROPHOBIC SURFACES 有权
标题翻译：具有疏水性表面的金属制品
公开(公告)号：US20110287223A1
公开(公告)日：2011-11-24
申请号：US12785650
申请日：2010-05-24
申请人： Jared J. Victor , Uwe Erb , Klaus Tomantschger , Nandakumar Nagarajan , Diana Facchini
发明人： Jared J. Victor , Uwe Erb , Klaus Tomantschger , Nandakumar Nagarajan , Diana Facchini
IPC分类号： B05D5/08 , B32B3/30 , C23C16/06 , C25D5/00 , C21D7/06 , C23F1/00 , C23F1/12 , C23F1/20 , C23F1/44 , C23F1/34 , B32B15/00 , C25F3/02
CPC分类号： C23C30/00 , C23C18/1653 , C23C24/04 , C25D1/006 , C25D1/02 , C25D1/10 , C25D5/16 , C25D5/48 , C25D15/00 , Y10T428/24355 , Y10T428/24372 , Y10T428/24405 , Y10T428/24413 , Y10T428/24421
摘要： Articles containing fine-grained and/or amorphous metallic coatings/layers on at least part of their exposed surfaces are imprinted with surface structures to raise the contact angle for water in the imprinted areas at room temperature by equal to or greater than 10°, when compared to the flat and smooth metallic material surface of the same composition.
摘要翻译：在其暴露表面的至少一部分上含有细粒和/或无定形金属涂层/层的制品印有表面结构，以在室温下的印刷区域中的水的接触角提高等于或大于10°，当相对于平整光滑的金属材料表面具有相同的组成。

6. 发明申请

US20050049162A1 Petroleum-free, ammonia-free cleaner for firearms and ordnance 审中-公开
标题翻译：无燃料，不含氨的火器和弹药清洁剂
公开(公告)号：US20050049162A1
公开(公告)日：2005-03-03
申请号：US10652178
申请日：2003-08-29
申请人： Ted Schlosser
发明人： Ted Schlosser
IPC分类号： C11D7/32 , C11D7/36 , C11D11/00 , C23F1/34 , C23F1/44 , C23G1/19 , C23G1/00
CPC分类号： C23F1/44 , C11D7/3218 , C11D7/36 , C11D11/0029 , C23F1/34 , C23G1/19
摘要： A composition for removing copper from a surface comprises a polyphosphonic acid, a primary amine, and water. Optionally, the composition may also comprise a dialkanolamine and/or a trialkanolamine, a degreaser, and/or a surfactant. The pH of the composition is between 9.0 and 12.5. The method of removing copper from a surface, which may be a gun bore, involves contacting the surface with the composition.
摘要翻译：用于从表面除去铜的组合物包括多膦酸，伯胺和水。任选地，组合物还可以包含二烷醇胺和/或三烷醇胺，脱脂剂和/或表面活性剂。组合物的pH为9.0至12.5。从可能是枪口的表面去除铜的方法包括使表面与组合物接触。

7. 发明授权

US5328561A Microetchant for copper surfaces and processes for using same 失效
标题翻译：铜表面微蚀刻机及其使用方法
公开(公告)号：US5328561A
公开(公告)日：1994-07-12
申请号：US911407
申请日：1992-07-10
申请人： Raymond A. Letize , William J. DeCesare , Lucia Justice
发明人： Raymond A. Letize , William J. DeCesare , Lucia Justice
IPC分类号： C23F1/34 , H05K3/38 , H05K3/42 , H01L21/00
CPC分类号： H05K3/383 , C23F1/34 , H05K3/389 , H05K2201/0239 , H05K2203/0392 , H05K2203/121 , H05K2203/125 , H05K3/422 , H05K3/427
摘要： An alkaline solution for the microetching of copper in the course of printed circuit manufacture is provided by combining components which are a source of cupric ion, ammonium hydroxide and/or a source of ammonium ion, and a compound, other than ammonia, which is a chelator for cupric ion in the alkaline environment of the solution. The microetchant composition is stable, brings about a desired microroughening of the copper surface with minimal removal of copper, is easily regenerated, and does not promote pink ring. When an organosilane through-hole conditioning agent is included in the composition, the composition can be used as a means for effecting in one step the microetching and conditioning steps of a printed circuit through-hole metallization process.
摘要翻译：通过将作为铜离子源，氢氧化铵源和/或铵离子源的组分与除氨以外的化合物组合，提供了在印刷电路制造过程中用于微蚀刻铜的碱性溶液，其为氨螯合剂用于铜离子在碱性环境中的溶液。微蚀剂组合物是稳定的，导致铜表面的期望的微晶化，铜的去除最少，容易再生，并且不促进粉红色环。当组合物中包含有机硅烷通孔调节剂时，该组合物可用作在一步进行印刷电路通孔金属化工艺的微蚀刻和调节步骤的手段。

8. 发明授权

US4358479A Treatment of copper and use thereof 失效
标题翻译：铜的处理及其用途
公开(公告)号：US4358479A
公开(公告)日：1982-11-09
申请号：US211998
申请日：1980-12-01
申请人： Michael J. Canestaro , Edmond O. Fey
发明人： Michael J. Canestaro , Edmond O. Fey
IPC分类号： C23C22/63 , C23F1/34 , H05K3/38 , B05D5/12 , C23F1/00
CPC分类号： C23C22/63 , H05K3/381 , H05K3/385 , H05K2203/0307 , H05K2203/0315 , H05K2203/0723 , H05K2203/1152
摘要： A method for modifying the surface characteristics of copper foil by contacting a surface thereof with an oxidizing composition; and use of the treated copper foil in the preparation of printed circuits.
摘要翻译：一种通过使其表面与氧化组合物接触来改变铜箔的表面特性的方法; 并使用经处理的铜箔制备印刷电路。

9. 发明授权

US4319955A Ammoniacal alkaline cupric etchant solution for and method of reducing etchant undercut 失效
标题翻译：氨基碱性蚀刻剂溶液和减少蚀刻剂底切的方法
公开(公告)号：US4319955A
公开(公告)日：1982-03-16
申请号：US204216
申请日：1980-11-05
申请人： Kenneth J. Murski
发明人： Kenneth J. Murski
IPC分类号： C23F1/34 , H05K3/06 , B44C1/22 , C23F1/00
CPC分类号： C23F1/34 , H05K3/067
摘要： An improved ammoniacal alkaline etchant solution and method of reducing etchant undercut for use in etching copper and copper-containing alloy traces on substrates having resist-coated areas and non-coated areas, which reduces the amount of undercutting beneath the resist-coated areas that lie above the copper traces. The improved etchant solution contains an organic undercut inhibitor which can be either 5-nitro-1H indazole or pyrazole and the improved method includes the step of incorporating said organic undercut inhibitor in a standard ammoniacal alkaline cupric etchant solution. The organic undercut inhibitor causes the formation of a bath-insoluble, physically weak, etch-resistant film on the copper substrate. Said film serves to protect the side walls of an etched depression and thereby diminishes undercutting.
摘要翻译：一种改进的氨基碱性蚀刻剂溶液和减少蚀刻剂底切的方法，用于在具有抗蚀剂涂覆区域和非涂覆区域的基底上蚀刻含铜和含铜合金迹线，这减少了在抗蚀剂涂覆区域下方的底切量铜线以上。改进的蚀刻剂溶液含有可以是5-硝基-1H-吲唑或吡唑的有机底切抑制剂，并且改进的方法包括将所述有机底切抑制剂掺入标准氨基碱性蚀刻剂溶液中的步骤。有机底切抑制剂导致在铜基底上形成浴不溶性，物理上弱的耐蚀刻膜。所述膜用于保护蚀刻凹陷的侧壁，从而减少底切。

10. 发明授权

US11225722B2 Alkaline cupric chloride etchant for printed circuit board 有权
公开(公告)号：US11225722B2
公开(公告)日：2022-01-18
申请号：US16322459
申请日：2017-08-04
申请人： Tao Ye
发明人： Tao Ye
IPC分类号： C23F1/34
摘要： An alkaline cupric chloride etchant for a printed circuit board, comprising copper chloride and a sub-etchant. The sub-etchant comprises the following in percentage by weight: 10 to 30 percent of ammonium chloride, 0.0002 to 25 percent of carboxylic acid and/or ammonium carboxylate, 0.01 to 45 percent of ammonium carbonate and/or ammonium bicarbonate, 0.0001 to 20 percent of one or more selected from hydroxylamine hydrochloride, hydroxylamine sulphate and hydrazine hydrate, the balance being water. The initial feed amount B of copper chloride is calculated according to the following formula: B=(134.5/63.5)x the set value of the copper ion concentration A; the control parameter of the production process of the resulting etchant is set to be: the copper ion concentration of 30-170 g/L.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式