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1. 发明授权

US11567223B2 Scintillation material of rare earth orthosilicate doped with strong electron-affinitive element and its preparation method and application thereof 有权
公开(公告)号：US11567223B2
公开(公告)日：2023-01-31
申请号：US17454688
申请日：2021-11-12
申请人： SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
发明人： Dongzhou Ding , Shuwen Zhao , Fan Yang , Junjie Shi , Chen Yuan , Linwei Wang , Zhongjun Xue
IPC分类号： G01T1/20 , G01T1/202 , C04B35/16 , C30B28/02 , C30B29/22
摘要： The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1−x−y+δ/2)Ce2xM(2y−δ)Si(1−δ)MδO5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0

2. 发明授权

US11133502B2 Cathode including sintered polycrystalline material, secondary battery including the cathode, and method of manufacturing the cathode 有权
公开(公告)号：US11133502B2
公开(公告)日：2021-09-28
申请号：US16170581
申请日：2018-10-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kyunghoon Cho , Seunghoon Nam , Hwiyeol Park , Hojung Yang , Huisu Jeong , Jin S. Heo
IPC分类号： H01M4/525 , H01M4/131 , H01M4/04 , H01M4/505 , H01M4/1391 , C30B28/02 , C30B29/22 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M10/0525 , H01M10/0562 , H01M10/052 , H01M10/0583 , H01M4/02
摘要： A cathode includes a cathode collector layer, and a cathode active material layer on a surface of the cathode collector layer. The cathode active material layer includes a sintered polycrystalline material having a plurality of crystal grains of a lithium-based oxide, and each of the plurality of crystal grains includes a seed template, and a matrix crystal around the seed template, where the seed template is a single crystal and having a shape of a plate.

3. 发明授权

US10147944B2 Cathode including sintered polycrystalline material, secondary battery including the cathode, and method of manufacturing the cathode 有权
公开(公告)号：US10147944B2
公开(公告)日：2018-12-04
申请号：US15047740
申请日：2016-02-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kyunghoon Cho , Seunghoon Nam , Hwiyeol Park , Hojung Yang , Huisu Jeong , Jin S. Heo
IPC分类号： H01M4/525 , H01M4/131 , H01M4/04 , H01M4/1391 , H01M4/505 , C30B28/02 , C30B29/22 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M10/0525 , H01M10/0562 , H01M10/052 , H01M10/0583 , H01M4/02
摘要： A cathode includes a cathode collector layer, and a cathode active material layer on a surface of the cathode collector layer. The cathode active material layer includes a sintered polycrystalline material having a plurality of crystal grains of a lithium-based oxide, and each of the plurality of crystal grains includes a seed template, and a matrix crystal around the seed template, where the seed template is a single crystal and having a shape of a plate.

4. 发明授权

US09932689B2 Semiconductor wafers recrystallized in a partially surrounding thin film capsule 有权
公开(公告)号：US09932689B2
公开(公告)日：2018-04-03
申请号：US14155546
申请日：2014-01-15
申请人： Massachusetts Institute of Technology
发明人： Emanuel M Sachs , James G. Serdy , Eerik T. Hantsoo
IPC分类号： C30B13/00 , C30B1/02 , C30B28/02 , C30B29/06 , H01L21/02 , H01L23/31 , H01L29/04
CPC分类号： C30B13/00 , C30B1/02 , C30B28/02 , C30B29/06 , H01L21/02532 , H01L21/02667 , H01L23/3171 , H01L29/04 , H01L2924/0002 , H01L2924/00
摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

5. 发明申请

US20170114473A1 POLARIZING APPARATUS AND POLARIZING METHOD 审中-公开
公开(公告)号：US20170114473A1
公开(公告)日：2017-04-27
申请号：US15290092
申请日：2016-10-11
申请人： Xianfeng CHEN
发明人： Xianfeng CHEN
IPC分类号： C30B1/02 , H01L41/39 , C30B29/32 , C30B28/02 , C30B30/02 , C30B1/08
CPC分类号： C30B1/023 , C30B1/08 , C30B28/02 , C30B29/32 , C30B30/02 , H01L41/1876 , H01L41/257 , H01L41/318 , H01L41/39
摘要： A polarizing apparatus includes an electromagnetic wave irradiator to irradiate a target film with an electromagnetic wave to heat the target film; and an electric charge generator to apply an electric field to the target film.

6. 发明授权

US08506703B2 Method and apparatus for forming colloidal photonic crystals 有权
标题翻译：形成胶体光子晶体的方法和装置
公开(公告)号：US08506703B2
公开(公告)日：2013-08-13
申请号：US12359687
申请日：2009-01-26
申请人： Young-sang Cho , Mi-jeong Song , Hong-seok Lee
发明人： Young-sang Cho , Mi-jeong Song , Hong-seok Lee
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02
CPC分类号： C30B29/68
摘要： A method for forming colloidal photonic crystals comprises; surrounding an outer circumference of a cylinder with a flexible substrate, spacing the cylinder a predetermined distance from a panel coated with a colloidal solution, and rotating the cylinder to form colloidal photonic crystals on the flexible panel.
摘要翻译：形成胶体光子晶体的方法包括：围绕具有柔性基板的圆筒的外周，将圆筒与涂有胶体溶液的面板隔开预定距离，并旋转圆筒以在柔性面板上形成胶体光子晶体。

7. 发明授权

US07803340B2 Process for producing siox particles 有权
标题翻译：生产siox颗粒的方法
公开(公告)号：US07803340B2
公开(公告)日：2010-09-28
申请号：US11663586
申请日：2005-09-22
申请人： Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki , Takashi Kawasaki , Masahiro Ibukiyama
发明人： Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki , Takashi Kawasaki , Masahiro Ibukiyama
IPC分类号： C01B15/14 , C01B33/20 , C01B33/12 , C01B25/00 , C01B33/00 , C01B35/00 , C01B15/00 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02 , C07C1/00 , C07C2/00 , C07C4/00 , C07C5/00 , C07C6/00 , B01J19/12
CPC分类号： C01B33/113 , B82Y30/00 , C01P2004/64 , C09C1/30 , C09C1/3009 , C09K11/592
摘要： Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.
摘要翻译：通过制造SiO x粒子的方法提供可用作半导体元件的结晶硅粒子，其包括将包含粒径为0.5的非晶硅粒子的SiOx（X为0.5以上且小于等于2.0）的粒子照射到 5nm，优选为激光束，生成SiO x（X为0.5以上且小于2.0）的粒子，各粒径粒径为1〜10nm的结晶硅粒子。

8. 发明申请

US20070044706A1 Method of forming a crystalline structure and a method of manufacturing a semiconductor device 审中-公开
标题翻译：形成晶体结构的方法和半导体器件的制造方法
公开(公告)号：US20070044706A1
公开(公告)日：2007-03-01
申请号：US11509735
申请日：2006-08-25
申请人： Sung-Kwan Kang , Yu-Gyun Shin , Jong-Wook Lee , Yong-Hoon Son
发明人： Sung-Kwan Kang , Yu-Gyun Shin , Jong-Wook Lee , Yong-Hoon Son
IPC分类号： C30B1/00 , C30B28/02 , C30B3/00 , C30B5/00
CPC分类号： C30B23/02 , C30B23/025 , C30B25/18 , C30B29/06 , C30B29/08 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02658 , H01L21/28525
摘要： In a method of forming a single crystalline structure and a method of manufacturing a semiconductor device by using the method of forming the single crystalline structure, a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass is formed. The single crystalline seed is epitaxially grown to form a single crystalline structure.
摘要翻译：在通过使用形成单晶结构的方法形成单晶结构的方法和制造半导体器件的方法中，具有与氧结合的元件以形成能够容易地连接到网络的网络形成器的单晶种子形成氧化物玻璃。将单晶种子外延生长以形成单晶结构。

9. 发明申请

US20060174818A1 Method of producing high quality relaxed silicon germanium layers 有权
公开(公告)号：US20060174818A1
公开(公告)日：2006-08-10
申请号：US11371442
申请日：2006-03-09
申请人： Eugene Fitzgerald , Richard Westhoff , Matthew Currie , Christopher Vineis , Thomas Langdo
发明人： Eugene Fitzgerald , Richard Westhoff , Matthew Currie , Christopher Vineis , Thomas Langdo
IPC分类号： C30B1/00 , C30B28/02 , C30B3/00 , C30B5/00
CPC分类号： C30B29/52 , C23C16/029 , C23C16/22 , C23C16/4401 , C30B25/02 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262
摘要： A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.

10. 发明申请

US20050199181A1 System and method for fabricating a crystalline thin structure 有权
标题翻译：用于制造晶体薄结构的系统和方法
公开(公告)号：US20050199181A1
公开(公告)日：2005-09-15
申请号：US11078544
申请日：2005-03-11
申请人： Randall Headrick
发明人： Randall Headrick
IPC分类号： B32B9/04 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02 , H01L51/00 , H01L51/40
CPC分类号： H01L51/0003 , C30B7/00 , C30B7/005 , C30B29/54 , H01L51/0052 , H01L51/0054
摘要： A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using a crystal grower (116, 200). In one embodiment, the crystal grower comprises a solution (124) containing the molecular precursor in a solvent (140). Molecules are added to the lateral growth front by moving one or both of the free surface (120, 120′) of the solution and deposition surface relative to the other at a predetermined rate. In another embodiment, the crystal grower comprises a mask (212) that includes at least one opening (216). Precursor molecules are vacuum deposited via a molecular beam (236) at the growth front (228) of the crystalline thin structure (204) as one or both of the opening and surface are moved relative to the other at a predetermined rate.
摘要翻译：通过从分子前体沉积到侧向生长前沿的分子（136,220），在衬底（112,208,400）的表面（108,228）上生长晶体薄结构（104,204,404），224）使用晶体栽植者（116,200）的结构。在一个实施方案中，晶体生长器包含在溶剂（140）中含有分子前体的溶液（124）。通过以预定的速率相对于另一个移动溶液和沉积表面的自由表面（120,120'）中的一个或两个来将分子添加到横向生长前沿。在另一个实施例中，晶体生长器包括包括至少一个开口（216）的掩模（212）。当晶体薄结构（204）中的一个或两个开口和表面以预定的速率相对于另一个移动时，前体分子通过分子束（236）被真空沉积在晶体薄结构（204）的生长前部（228）处。

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