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1. 发明申请

US20190249328A1 METHOD ASSOCIATED WITH A CRYSTALLINE COMPOSITION AND WAFER 审中-公开
公开(公告)号：US20190249328A1
公开(公告)日：2019-08-15
申请号：US16246065
申请日：2019-01-11
申请人： Soraa, Inc.
发明人： Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
IPC分类号： C30B7/00 , C30B29/68 , C30B29/40 , C30B25/20 , C30B9/08 , C30B25/02 , C30B19/12 , C30B19/02 , C30B7/10
CPC分类号： C30B7/005 , C30B7/105 , C30B9/08 , C30B19/02 , C30B19/12 , C30B25/02 , C30B25/20 , C30B29/406 , C30B29/68
摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

2. 发明授权

US10208396B2 Crystalline gallium nitride containing flourine 有权
公开(公告)号：US10208396B2
公开(公告)日：2019-02-19
申请号：US15061069
申请日：2016-03-04
申请人： Soraa, Inc.
发明人： Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
IPC分类号： C30B29/40 , C30B7/00 , C30B9/08 , C30B19/02 , C30B19/12 , C30B25/02 , C30B7/10 , C30B25/20 , C30B29/68
摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

3. 发明授权

US5614018A Integrated circuit capacitors and process for making the same 失效
标题翻译：集成电路电容器和制造相同的工艺
公开(公告)号：US5614018A
公开(公告)日：1997-03-25
申请号：US273592
申请日：1994-07-11
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L27/115 , C30B9/08
CPC分类号： H01L27/11502 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.
摘要翻译：对溶解在甲氧基乙醇中的纯度为99.999％的BST的原液进行二甲苯交换，加入2-乙基己酸镁等掺杂剂金属的羧酸盐，形成前体。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在750℃至800℃退火约1小时以形成精确掺杂的BST层。在750℃至800℃下沉积，图案化和退火第二电极约30分钟。如果掺杂剂为约5％摩尔浓度的镁，则会产生优异的漏电流。对于其它掺杂剂如Mg，Nb，Y，Bi和Sn，优选的掺杂剂范围为0.2％至0.3％摩尔浓度。掺杂镁的材料用作未掺杂的BST电容器的电极和BST电介质之间的缓冲层。

4. 发明申请

US20190127876A1 PREPARATION METHOD OF MONOCRYSTAL URANIUM DIOXIDE NUCLEAR FUEL PELLETS 审中-公开
公开(公告)号：US20190127876A1
公开(公告)日：2019-05-02
申请号：US15924191
申请日：2018-03-17
申请人： Institute of Materials, China Academy of Physics
发明人： ZHENLIANG YANG , BINGQING LI , RUI GAO , JIANPING JIA , HAO TANG , LIMEI DUAN , Xuxu Liu , YI ZHONG , QIQI HUANG , ZHIYI WANG
IPC分类号： C30B9/08 , G21C3/62 , G21C21/00 , C01G43/025 , C30B29/16 , C30B35/00
摘要： The application discloses a preparation method of monocrystal uranium dioxide nuclear fuel pellets, comprising: granulating and pelleting UO2 powder to obtain UO2 pellets; then coating surfaces of the UO2 pellets with monocrystal growth additive micro powder to form core-shell structure particles; and activated-sintering the core-shell structure particles at high temperature, liquefying the monocrystal growth additive on the surface of the core-shell structure particle at high temperature and then diffusing into UO2 pellets, dissolving the UO3 in the liquid monocrystal growth additive, and recrystallizing the UO2 to form the monocrystal UO2 nuclear fuel pellets.

5. 发明授权

US09493351B2 Methods of producing cadmium selenide multi-pod nanocrystals 有权
标题翻译：生产硒化镉多荚果纳米晶体的方法
公开(公告)号：US09493351B2
公开(公告)日：2016-11-15
申请号：US13811835
申请日：2011-12-07
申请人： Xinhua Zhong , Wenjin Zhang
发明人： Xinhua Zhong , Wenjin Zhang
IPC分类号： C01B19/00 , C30B9/08 , C30B29/46 , C30B29/62
CPC分类号： C01B19/007 , C30B9/08 , C30B29/46 , C30B29/62
摘要： Methods for the non-hot-injection synthesis of semiconductor nanocrystals are described. For example, a multi-podal cadmium selenide nanocrystal may be produced by a method including heating a degassed mixture comprising cadmium oxide, selenium, trioctylphosphine, and a carboxylic acid in a non-coordinating solvent from about room temperature to about 210° C., where the multi-podal cadmium selenide nanocrystal may be a tetrapodal cadmium selenide nanocrystal.
摘要翻译：描述了非热注射合成半导体纳米晶体的方法。例如，可以通过包括在约室温至约210℃的非配位溶剂中加热包含氧化镉，硒，三辛基膦和羧酸的脱气混合物的方法来制备多镉硒化镉纳米晶体，其中多镉硒化镉纳米晶体可以是四节省硒化镉纳米晶体。

6. 发明授权

US4540461A Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution 失效
标题翻译：由氯化钾 - 银硫代镓酸钾溶液外延生长的银硫代单晶层
公开(公告)号：US4540461A
公开(公告)日：1985-09-10
申请号：US605359
申请日：1984-04-30
申请人： Sanat K. Sashital , Robert L. Joyce , Anthony L. Gentile
发明人： Sanat K. Sashital , Robert L. Joyce , Anthony L. Gentile
IPC分类号： C30B9/08 , C30B19/02 , C30B29/46
CPC分类号： C30B19/02 , C30B29/46
摘要： A method of making a thin, high purity single crystal layer of silver thiogallate. According to the preferred embodiment of this method, a seed crystal substrate of silver thiogallate is dipped into a molten solution of silver thiogallate dissolved in potassium chloride. Upon slowly cooling the solution, the thin layer of single crystal silver thiogallate forms on the substrate. Upon removal, very little of the potassium chloride adheres to the surface, and what does adhere to the surface can be easily removed by washing the surface with hot water.
摘要翻译：制备薄硫酸镓的薄的高纯度单晶层的方法。根据该方法的优选实施方案，将硫代镓酸银的晶种底物浸入溶于氯化钾的硫代镓酸银的熔融溶液中。在缓慢冷却溶液的同时，在底物上形成薄层的单晶硫代硫酸银。去除后，很少的氯化钾粘附到表面，并且通过用热水洗涤表面可以容易地除去附着在表面上的物质。

7. 发明授权

US10689776B2 Preparation method of monocrystal uranium dioxide nuclear fuel pellets 有权
公开(公告)号：US10689776B2
公开(公告)日：2020-06-23
申请号：US15924191
申请日：2018-03-17
申请人： Institute of Materials, China Academy of Engineering Physics
发明人： Zhenliang Yang , Bingqing Li , Rui Gao , Pengcheng Zhang , Jianping Jia , Hao Tang , Limei Duan , Xuxu Liu , Yi Zhong , Qiqi Huang , Zhiyi Wang , Tong Liu , Hailong Wu , Siyu Gao , Maozhou Sun
IPC分类号： C30B9/08 , G21C3/62 , C30B35/00 , C01G43/025 , C30B29/16 , G21C21/00 , G21C21/02 , C04B35/626 , C04B35/628 , C04B35/51 , G21C3/04 , C30B25/00
摘要： The application discloses a preparation method of monocrystal uranium dioxide nuclear fuel pellets, comprising: granulating and pelleting UO2 powder to obtain UO2 pellets; then coating surfaces of the UO2 pellets with monocrystal growth additive micro powder to form core-shell structure particles; and activated-sintering the core-shell structure particles at high temperature, liquefying the monocrystal growth additive on the surface of the core-shell structure particle at high temperature and then diffusing into UO2 pellets, dissolving the UO3 in the liquid monocrystal growth additive, and recrystallizing the UO2 to form the monocrystal UO2 nuclear fuel pellets.

8. 发明授权

US09299555B1 Ultrapure mineralizers and methods for nitride crystal growth 有权
标题翻译：超纯矿化剂和氮化物晶体生长方法
公开(公告)号：US09299555B1
公开(公告)日：2016-03-29
申请号：US14033107
申请日：2013-09-20
申请人： SORAA, INC.
发明人： Alex Alexander , John W. Nink, Jr. , Mark P. D'Evelyn
IPC分类号： C30B9/12 , H01L21/02 , C30B7/10 , C30B9/04 , C30B9/08 , C30B29/38
CPC分类号： C30B29/38 , C30B7/105 , C30B9/04 , C30B9/08 , C30B9/12 , C30B29/403
摘要： An ultrapure mineralizer is formed by vaporization, condensation, and delivery of a condensable mineralizer composition. The mineralizer has an oxygen content below 100 parts per million. The ultrapure mineralizer is useful as a raw material for ammonothermal growth of bulk group III metal nitride crystals.
摘要翻译：通过蒸发，冷凝和递送可冷凝矿化剂组合物形成超纯矿化剂。矿化剂的氧含量低于100ppm。超纯矿化剂可用作本体III族金属氮化物晶体的氨热生长原料。

9. 发明授权

US09279193B2 Method of making a gallium nitride crystalline composition having a low dislocation density 有权
标题翻译：制造具有低位错密度的氮化镓结晶组合物的方法
公开(公告)号：US09279193B2
公开(公告)日：2016-03-08
申请号：US11558048
申请日：2006-11-09
申请人： Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
发明人： Mark Philip D'Evelyn , Kristi Jean Narang , Dong-Sil Park , Huicong Hong , Xian-An Cao , Larry Qiang Zeng
IPC分类号： C30B23/02 , C30B25/02 , C30B9/08 , C30B19/02 , C30B19/12
CPC分类号： C30B7/005 , C30B7/105 , C30B9/08 , C30B19/02 , C30B19/12 , C30B25/02 , C30B25/20 , C30B29/406 , C30B29/68
摘要： A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
摘要翻译：生长结晶组合物的方法，第一结晶组合物可包括镓和氮。结晶组合物可以在约3175cm -1处具有红外吸收峰，每单位厚度的吸光度大于约0.01cm -1。在一个实施方案中，组合物可以具有以小于约3×1018 /立方厘米的浓度存在的量的量，并且在确定的第一结晶组合物体积中可以没有二维平面边界缺陷。

10. 发明授权

US4534822A Method of synthesizing thin, single crystal layers of silver thiogallate (AgGaS.sub.2) 失效
标题翻译：合成银硫代镓酸银（AgGaS2）薄单层的方法
公开(公告)号：US4534822A
公开(公告)日：1985-08-13
申请号：US605363
申请日：1984-04-30
申请人： Sanat K. Sashital
发明人： Sanat K. Sashital
IPC分类号： C30B9/00 , C30B9/08 , C30B19/02 , C30B29/46
CPC分类号： C30B19/02 , C30B29/46
摘要： A method of growing a single crystal layer of silver thiogallate having a maximum thickness of 50 micrometers. This crystal is of a high purity having a higher degree of crystalline perfection than the substrate on which it is grown. The crystal is grown epitaxially from a solution of silver thiogallate in a solvent of either antimony sulfide or lead sulfide. The solution is prepared by heating a mixture of the materials (solid silver thiogallate in molten solvent) slowly at a rate of, for example, 3.degree. to 5.degree. C. per minute until the mixture reaches a temperature about 10.degree. C. above the liquidus, and maintaining this temperature for 16 hours or more. The above referenced solution is then gradually cooled at a rate of, for example, 1.degree. C. per minute to the temperature at which crystal growth is to be initiated. At this temperature a polished single crystal substrate of a material which has an appropriate lattice relationship with silver thiogallate is dipped into the molten solution. The solution and substrate are then cooled at a slow rate of, for example, 0.05.degree. C. per minute over the temperature range within which crystal growth is to occur. During this cooling, the substrate is rotated in the melt. On obtaining the desired thickness of the epitaxially-grown single crystal layer, the substrate is withdrawn from the solution.
摘要翻译：生长最大厚度为50微米的硫代镓酸银的单晶层的方法。该晶体具有比其生长的基底具有更高程度的晶体完整性的高纯度。晶体从硫化镓银溶液在硫化锑或硫化铅的溶剂中外延生长。通过以例如3℃至5℃/分的速度缓慢加热材料（固体硫代镓酸盐在熔融溶剂中）的混合物制备溶液，直到混合物达到高于液相线，并保持该温度16小时以上。然后将上述参考溶液以例如1℃/分钟的速率逐渐冷却至将开始晶体生长的温度。在该温度下，将与硫代镓酸银具有适当晶格关系的材料的抛光单晶衬底浸入熔融溶液中。然后在发生晶体生长的温度范围内，以例如0.05℃/分钟的缓慢速率冷却溶液和底物。在该冷却期间，基板在熔体中旋转。在获得外延生长的单晶层的期望厚度时，从溶液中取出基板。

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