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    • 7. 发明授权
    • Sealing device
    • 密封装置
    • US08837552B2
    • 2014-09-16
    • US12996463
    • 2009-06-05
    • Jiliang XiaTapio AhokainenRisto Saarinen
    • Jiliang XiaTapio AhokainenRisto Saarinen
    • H05B7/12C03B5/027H05B3/60F27B14/04H05B7/06H05B7/08H05B7/10H05B7/107H05B7/101F16J15/02F16J15/08E21B33/06
    • H05B7/12
    • A sealing device is arranged around a rod electrode extending vertically through an aperture made in the ceiling of an arc furnace and being vertically movable inside the furnace to prevent the access of gases from the furnace through the aperture to the atmosphere, and on the other hand to prevent air from flowing from the atmosphere into the furnace. The sealing device comprises a gas distribution chamber provided with an inlet channel for feeding essentially passive gas, such as nitrogen or air, into the gas distribution chamber. The sealing device also includes a slit nozzle encasing the electrode, through which nozzle a gas jet is arranged to be discharged from the gas distribution chamber towards the electrode in a direction that is at an angle with respect to the horizontal plane and has a slightly upwards inclined orientation, and that is, with respect to the furnace interior, pointed outwardly, so that the sealing is carried out owing to the effect of the created stagnation pressure.
    • 密封装置围绕杆电极设置,该杆电极垂直延伸穿过在电弧炉的天花板中制成的孔,并且可在炉内竖直移动,以防止气体从炉通过孔到达大气,另一方面 以防止空气从大气中流入炉中。 密封装置包括气体分配室,其设置有用于将基本上被动气体(例如氮气或空气)供入气体分配室的入口通道。 密封装置还包括狭缝喷嘴,其包围电极,喷嘴通过该喷嘴布置成沿着与水平面成一定角度的方向从气体分配室朝向电极排出,并具有稍微向上 倾斜方向,也就是说,相对于炉内部,向外指向,从而由于产生的停滞压力的影响而进行密封。
    • 8. 发明申请
    • METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS
    • 用于生产多晶硅块的方法和装置
    • US20130219967A1
    • 2013-08-29
    • US13703922
    • 2011-06-10
    • Stephan HussyChristian Hoess
    • Stephan HussyChristian Hoess
    • F27B14/04C01B33/021
    • F27B14/04C01B33/021C30B11/002C30B11/003C30B11/04C30B29/06
    • A crucible is filled with silicon material and is arranged in a process chamber. The silicon material in the crucible is melted and is subsequently cooled below the solidification temperature. During a time period, a plate element that has at least one passage may be arranged over the molten silicon in the crucible, and a gas flow may be directed onto the surface of the molten silicon at least partially via the at least one passage. Alternatively a crucible arrangement includes a crucible and a holding ring arranged on or above a crucible filled with silicon material. Additional silicon material may be received and held above the crucible by the holding ring. During the heating of the silicon material in the crucible and the holding ring, molten silicon is formed in a crucible, which is subsequently cooled below the solidification temperature of the silicon.
    • 坩埚中填充有硅材料,并布置在处理室中。 将坩埚中的硅材料熔化并随后冷却至凝固温度以下。 在一段时间内,具有至少一个通道的板元件可以布置在坩埚中的熔融硅上方,并且可以至少部分地经由至少一个通道将气流引导到熔融硅的表面上。 或者,坩埚装置包括布置在填充有硅材料的坩埚上或上方的坩埚和保持环。 另外的硅材料可以被保持环容纳并保持在坩埚上方。 在坩埚和保持环中的硅材料加热期间,在坩埚中形成熔融硅,随后冷却至低于硅的凝固温度。