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1. 发明授权

US10066315B2 Single crystal growing apparatus 有权
公开(公告)号：US10066315B2
公开(公告)日：2018-09-04
申请号：US15100597
申请日：2014-11-19
申请人： SK SILTRON CO., LTD.
发明人： In Sik Bang , Cheol Hwan Kim
IPC分类号： C30B17/00 , C30B15/14 , C30B35/00 , C30B15/20 , C30B29/20 , C30B11/00
CPC分类号： C30B17/00 , C30B11/006 , C30B15/14 , C30B15/20 , C30B29/20 , C30B35/00 , Y10T117/1004 , Y10T117/1008
摘要： An embodiment comprises: a chamber; a crucible provided in the chamber and accommodating a molten liquid which is a raw material for single crystal growth; a crucible screen disposed on the upper end of the crucible; and a moving unit for raising or lowering the crucible screen, wherein the crucible screen and a first upper adiabatic unit are raised to control the stroke distance, thereby preventing the impossibility of a lift-off process caused by a shortage of the stroke distance and the generation of cracks in single crystals.

2. 发明授权

US10053797B2 Crystal growth apparatus and thermal insulation cover of the same 有权
公开(公告)号：US10053797B2
公开(公告)日：2018-08-21
申请号：US14675220
申请日：2015-03-31
申请人： GLOBALWAFERS CO., LTD.
发明人： Lu-Chung Chuang , Chih-Chieh Yu , Wen-Chieh Lan , I-Ching Li , Wen-Ching Hsu , Jiunn-Yih Chyan
IPC分类号： C30B35/00 , C30B15/10 , C30B15/14 , C30B11/00
CPC分类号： C30B35/002 , C30B11/002 , C30B15/10 , C30B15/14 , C30B35/00 , Y10T117/1068 , Y10T117/1092
摘要： A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.

3. 发明授权

US09938633B2 System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source 有权
公开(公告)号：US09938633B2
公开(公告)日：2018-04-10
申请号：US14240818
申请日：2012-08-31
申请人： Jean-Paul Garandet , Anis Jouini , David Pelletier
发明人： Jean-Paul Garandet , Anis Jouini , David Pelletier
IPC分类号： C30B11/00 , C30B29/06 , C30B28/06 , C30B33/02 , C30B35/00 , H01L31/18
CPC分类号： C30B11/003 , C30B11/007 , C30B11/008 , C30B28/06 , C30B29/06 , C30B33/02 , C30B35/00 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1092
摘要： The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

4. 发明申请

US20180066377A1 APPARATUS FOR MANUFACTURING SILICON SINGLE CRYSTAL AND MELT INLET PIPE OF THE SAME 有权
公开(公告)号：US20180066377A1
公开(公告)日：2018-03-08
申请号：US15677368
申请日：2017-08-15
申请人： SUMCO CORPORATION
发明人： Mitsuaki HAYASHI , Wataru SUGIMURA , Ippei SHIMOZAKI
IPC分类号： C30B15/02 , C30B29/06 , C30B15/10
CPC分类号： C30B15/02 , C30B15/04 , C30B15/10 , C30B15/12 , C30B29/06 , C30B35/00 , Y10T117/1056
摘要： An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism (50) for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber. The melt supplying mechanism includes a melt inlet pipe (51) disposed at an inclination angle θ1 of 50° to 80° with respect to the melt surface of the silicon melt and a melt generating mechanism (54) for supplying the additional silicon melt (M) to an opening part (512) of a base end of the melt inlet pipe. The melt inlet pipe has a tip end provided with an opening part (511). The opening part of the tip end has an annular surface inclined at an angle θ2 with respect to a direction orthogonal to the axis of the melt inlet pipe. The annular surface has a vertically lower side (511a) and a vertically upper side (511b). The vertically lower side is located nearer to the tip end in the axis direction than the vertically upper side.

5. 发明申请

US20170362735A1 CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD 审中-公开
公开(公告)号：US20170362735A1
公开(公告)日：2017-12-21
申请号：US15622427
申请日：2017-06-14
申请人： OSAKA UNIVERSITY , Panasonic Corporation
发明人： Yusuke MORI , Mamoru IMADE , Shinsuke KOMATSU , Michirou YOSHINO
IPC分类号： C30B9/12 , C30B29/40
CPC分类号： C30B9/12 , C30B29/406 , C30B35/00
摘要： A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

6. 发明申请

US20170350038A1 VACUUM PLATFORM WITH PROCESS CHAMBERS FOR REMOVING CARBON CONTAMINANTS AND SURFACE OXIDE FROM SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：US20170350038A1
公开(公告)日：2017-12-07
申请号：US15499100
申请日：2017-04-27
申请人： Applied Materials, Inc.
发明人： Kin Pong LO , Schubert S. CHU
IPC分类号： C30B25/18 , H01L21/67 , C30B29/06 , H01L21/02 , C30B29/52 , H01L21/677 , C30B25/20
CPC分类号： C30B25/186 , C30B25/00 , C30B29/06 , C30B29/52 , C30B35/00 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32477 , H01J37/32899 , H01L21/02046 , H01L21/67167 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.

7. 发明申请

US20170283944A1 SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD 审中-公开
公开(公告)号：US20170283944A1
公开(公告)日：2017-10-05
申请号：US15508421
申请日：2015-06-24
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Hajime FUJIKURA
IPC分类号： C23C16/44 , C23C16/458 , C23C16/455 , C30B25/16 , B08B5/02 , C30B29/40 , H01L21/67 , H01L21/687 , H01L21/02 , C23C16/46 , C30B25/14
CPC分类号： C23C16/4401 , B08B5/02 , C23C16/4405 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/54 , C30B25/14 , C30B25/165 , C30B29/40 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/205 , H01L21/67109 , H01L21/6719 , H01L21/68714 , H01L21/68785
摘要： There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

8. 发明申请

US20170259294A1 SUBSTRATE PROCESSING SYSTEM HAVING SUSCEPTORLESS SUBSTRATE SUPPORT WITH ENHANCED SUBSTRATE HEATING CONTROL 审中-公开
公开(公告)号：US20170259294A1
公开(公告)日：2017-09-14
申请号：US15604900
申请日：2017-05-25
申请人： APPLIED MATERIALS, INC.
发明人： JOSEPH M. RANISH , KAILASH PATALAY
IPC分类号： B05C13/00 , H01L21/687 , C30B23/02 , H01L21/67 , C30B35/00
CPC分类号： B05C13/00 , C30B23/02 , C30B35/00 , H01L21/67115 , H01L21/68735
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit, the process kit comprising a first ring to support a substrate proximate a peripheral edge of the substrate; a second ring disposed about the first ring; and a path formed between the first and second rings that allows the first ring to rotate with respect to the second ring, wherein the path substantially prevents light from travelling between a first volume disposed below the first and second rings and a second volume disposed above the first and second rings.

9. 发明申请

US20170233888A1 REACTOR GAS PANEL COMMON EXHAUST 审中-公开
公开(公告)号：US20170233888A1
公开(公告)日：2017-08-17
申请号：US15585371
申请日：2017-05-03
申请人： Applied Materials, Inc.
发明人： Dennis L. DEMARS
IPC分类号： C30B25/14 , C23C16/455 , H01L21/67 , C23C16/44
CPC分类号： C30B25/14 , C23C16/4412 , C23C16/45561 , C30B35/00 , H01L21/67017 , H01L21/6719
摘要： A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel.

10. 发明授权

US09724666B1 Apparatus for large volume ammonothermal manufacture of gallium nitride crystals and methods of use 有权
公开(公告)号：US09724666B1
公开(公告)日：2017-08-08
申请号：US13656615
申请日：2012-10-19
申请人： Soraa, Inc.
发明人： Pakalapati Tirumala Rajeev , Douglas W. Pocius , Mark P. D'Evelyn
IPC分类号： B01J19/06 , C30B7/10 , C30B35/00
CPC分类号： B01J19/06 , A61B6/12 , A61M25/00 , A61M25/0105 , A61M25/0113 , A61M25/09 , A61M25/09041 , A61M25/0905 , A61M2025/09133 , C30B7/10 , C30B35/00
摘要： An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.

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