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1. 发明申请

US20220351987A1 BONDING METHOD FOR CLEANING NON-BONDING SURFACE OF SUBSTRATE 有权
公开(公告)号：US20220351987A1
公开(公告)日：2022-11-03
申请号：US17813369
申请日：2022-07-19
申请人： Tokyo Electron Limited
发明人： Yuji Mimura , Hiroshi Maeda , Satoshi Nishimura
IPC分类号： H01L21/67 , H01L21/304 , H01L21/66 , G06T7/00 , H01L21/18 , H01J37/32 , B32B37/00 , H01J9/48 , B24B7/00 , H01J37/36 , B24D3/00
摘要： A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

2. 发明授权

US11072850B2 Process for coating a conductive component and conductive component coating 有权
公开(公告)号：US11072850B2
公开(公告)日：2021-07-27
申请号：US15653587
申请日：2017-07-19
申请人： Universidade Federal De Santa Catarina
发明人： Cristiano Binder , Aloisio Nelmo Klein , Kaline Pagnan Furlan , Pedro Henrique Teshima Shioga , Renan Oss Giacomelli , Roberto Binder
IPC分类号： C23C14/00 , C23C14/32 , C23C28/04 , C23C28/02 , C23C16/02 , C23C28/00 , C23C16/26 , C23C8/20 , C23C8/24 , H01J37/32 , C23C8/30 , C23C14/02 , C23C14/06 , H01J37/36
摘要： The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process includes the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.

3. 发明授权

US11069511B2 System and methods using an inline surface engineering source 有权
公开(公告)号：US11069511B2
公开(公告)日：2021-07-20
申请号：US16015323
申请日：2018-06-22
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Christopher Hatem , Peter F. Kurunczi , Christopher A. Rowland , Joseph C. Olson , Anthony Renau
IPC分类号： H01L21/67 , H01J37/32 , H01J37/36
摘要： A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

4. 发明申请

US20190393019A1 System And Methods Using An Inline Surface Engineering Source 审中-公开
公开(公告)号：US20190393019A1
公开(公告)日：2019-12-26
申请号：US16015323
申请日：2018-06-22
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Christopher Hatem , Peter F. Kurunczi , Christopher A. Rowland , Joseph C. Olson , Anthony Renau
IPC分类号： H01J37/32 , H01L21/67 , H01J37/36
摘要： A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

5. 发明申请

US20180023187A1 Process for Coating a Conductive Component and Conductive Component Coating 审中-公开
公开(公告)号：US20180023187A1
公开(公告)日：2018-01-25
申请号：US15653587
申请日：2017-07-19
申请人： Universidade Federal De Santa Catarina
发明人： Cristiano BINDER , Aloisio Nelmo KLEIN , Kaline Pagnan FURLAN , Pedro Henrique Teshima SHIOGA , Renan Oss GIACOMELLI , Roberto BINDER
IPC分类号： C23C14/32 , C23C14/06 , H01J37/36 , C23C14/02
CPC分类号： C23C14/32 , C23C8/20 , C23C8/24 , C23C8/30 , C23C14/022 , C23C14/0605 , C23C16/0272 , C23C16/26 , C23C28/00 , C23C28/021 , C23C28/023 , C23C28/046 , H01J37/32862 , H01J37/36 , H01J2237/332
摘要： The present invention describes a process for coating conductive component in a plasma reactor and a conductive component coating, wherein the process includes the steps of cleaning, mechanical support deposition, topographic modification by plasma bombardment, chemical support layer deposition and amorphous carbon layer deposition (Diamond-Like Carbon). In one embodiment, the process is in single cycle. The present invention pertains to the fields of Materials Engineering, Physics and Chemistry.

6. 发明申请

US20100096568A1 SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD OF THE SAME 有权
标题翻译：基板加工装置及其清洗方法
公开(公告)号：US20100096568A1
公开(公告)日：2010-04-22
申请号：US12579636
申请日：2009-10-15
申请人： Einstein Noel ABARRA , Masahiro Shibamoto
发明人： Einstein Noel ABARRA , Masahiro Shibamoto
IPC分类号： H01J37/36
CPC分类号： H01J37/317 , H01J37/32422 , H01J37/32568 , H01J37/32862 , H01J2237/022 , H01J2237/0822 , H01J2237/3156 , H01J2237/316
摘要： A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.
摘要翻译：一种清洗基板处理装置的方法，其中第一离子束发生器和第二离子束发生器彼此相对布置以夹持其上放置基板的平面，并且处理基板的两个表面，包括从第一离子束发生器和第二离子束发生器之间的位置退回衬底的步骤，以及通过从第一离子束发生器向第二离子束发生器发射离子束来清洁第二离子束发生器。

7. 发明授权

US3974059A High vacuum ion plating device 失效
标题翻译：高真空离子电镀装置
公开(公告)号：US3974059A
公开(公告)日：1976-08-10
申请号：US511863
申请日：1974-10-03
申请人： Yoichi Murayama
发明人： Yoichi Murayama
IPC分类号： C23C14/32 , H01J37/36 , C23C15/00
CPC分类号： H01J37/36 , C23C14/32 , Y10S148/045 , Y10S148/169
摘要： A DC high tension is impressed between an evaporation source and a holder containing a substrate to be vacuum plated. The source and substrate holder are disposed in an evaporation chamber of high vacuum. Immediately above the evaporation source, an ion chamber is formed and a voltage is impressed between a filament for electron emission and an anode for current collection. The filament and anode are disposed in the ion chamber to transfer an electron shower between them and the evaporation particles which are ionized by the electron shower.When more than one evaporation source is employed, a high frequency coil is disposed in the coexistence region of the ionized evaporated particles generated therefrom, whereby a high frequency oscillation region is formed and thus it becomes possible to effect a chemical bond between ionized evaporated particles of different kinds.
摘要翻译：在蒸发源和包含待真空镀覆的基底的保持器之间施加DC高张力。源极和衬底保持器设置在高真空的蒸发室中。在蒸发源的上方，形成离子室，并且在用于电子发射的灯丝和用于集电的阳极之间施加电压。灯丝和阳极设置在离子室中以在它们之间传输电子淋浴和通过电子淋浴电离的蒸发颗粒。

8. 发明授权

US3640811A Method of metalizing semiconductor devices 失效
标题翻译：金属化半导体器件的方法
公开(公告)号：US3640811A
公开(公告)日：1972-02-08
申请号：US3640811D
申请日：1969-11-03
申请人： RCA CORP
发明人： VOSSEN JOHN LOUIS JR
IPC分类号： H01L21/3205 , C23C14/32 , H01J37/36 , H01L21/00 , H01L21/285 , H01L23/485 , C23C15/00
CPC分类号： H01L21/00 , C23C14/32 , H01J37/36 , H01L23/485 , H01L2924/0002 , H01L2924/3011 , Y10S148/017 , Y10S148/02 , Y10S148/045 , Y10S148/05 , Y10S148/158 , Y10S148/169 , H01L2924/00
摘要： A semiconductor device is placed in a vacuum system and is sputter-etched by a radiofrequency glow discharge for a period of time sufficient to remove impurities and residual oxide layers from the contact surfaces of the device. A quantity of metal is then evaporated onto the purified surface while maintaining the glow discharge so that the metal is partially ionized and accelerated towards the purified surface, and thereby forms a solid solution with the semiconductor to provide a direct ohmic contact therewith without having to subsequently sinter the metal deposit.
摘要翻译：将半导体器件放置在真空系统中，并通过射频辉光放电进行溅射蚀刻一段时间，足以从器件的接触表面去除杂质和残留的氧化物层。然后将一定量的金属蒸发到纯化的表面上，同时保持辉光放电，使得金属被部分离子化并朝向纯化的表面加速，从而与半导体形成固溶体以提供与其的直接欧姆接触，而不必随后烧结金属沉积物。

9. 发明授权

US3514392A Ion plating anode source 失效
标题翻译：离子淀粉阳极源
公开(公告)号：US3514392A
公开(公告)日：1970-05-26
申请号：US3514392D
申请日：1968-03-18
申请人： AUTOMATIC FIRE CONTROL INC
发明人： BRUMFIELD ROBERT C , NAFF JOHN T , ROBINSON ALONZO T W
IPC分类号： C23C14/32 , H01J37/36 , C23C15/00
CPC分类号： H01J37/36 , C23C14/32

10. 发明授权

US3428546A Apparatus for vacuum deposition on a negatively biased substrate 失效
标题翻译：用于真空沉积在负极基板上的装置
公开(公告)号：US3428546A
公开(公告)日：1969-02-18
申请号：US3428546D
申请日：1966-09-27
申请人： ATOMIC ENERGY COMMISSION
发明人： BAUM GARY ALLEN , BENO RICHARD L , VOROUS THEODORE VAN
IPC分类号： C23C14/32 , H01J37/36 , C23C15/00
CPC分类号： C23C14/32 , H01J37/36

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