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    • 4. 发明申请
    • METHODS TO PRODUCE ULTRA-THIN METAL NANOWIRES FOR TRANSPARENT CONDUCTORS
    • 生产超薄金属纳米线用于透明导体的方法
    • WO2016049430A8
    • 2017-04-20
    • PCT/US2015052180
    • 2015-09-25
    • UNIV CALIFORNIA
    • YANG PEIDONGSUN JIANWEIYU YICUI FAN
    • C07F1/08B22F1/00B22F9/24C01G3/00C01G3/04C01G3/05C01G3/08C07F7/08C07F7/12C07F7/18
    • C07F7/0896B22F1/0025B22F9/24B82B3/00C07F1/08C07F7/12C07F7/1844H01B1/02
    • The disclosure provides methods to produce ultrathin metal nanowires and methods to produce ultrathin copper elongated nanostructures. Also claimed are the metal nanowires produced by these methods, and the use of the metal nanowires as transparent conductors. The claimed method comprises the steps of: a) forming a reaction mixture comprising a silane-based reducing agent, a copper metal salt and a surface ligand, wherein the surface ligand may also be a solvent; and b) heating and maintaining the reaction mixture at an elevated temperature between 1 to 48 hours with or without stirring. Examples for copper metal salts are Cul, CuBr, CuCI, CuF, CuSCN, CuCI2, CuBr2, CuF2, Cu(OH)2, Cu-D-gluconate, CuMo04, Cu(N03)2, Cu(Clo4) 2, CuP207, CuSe03, CuS04, Cu-tartrate, Cu(BF4)2, Cu(NH3) 4SO4, and including any hydrates of the foregoing. Examples for silane-based reducing agents are: trietylsilane, trimethylsilane, triisopropylsilane, triphenylsilane, tri-n-propylsilane, tri-n-hexylsilane, triethoxysilane, tris(trimethylsiloxy)silane, tris(trimethylsilyl)silane, di-tert- butylmethylsilane, diethylmethylsilane, diisopropylchlorosilane, dimethylchlorosilane, dimethylethoxysilane, diphenylmethylsilane, ethyldimethylsilane, ethyldichlorosilane, methyldichlorosilane, methyldiethoxysilane, octadecyldimethylsilane, phenyldimethylsilane, phenylmethylchlorosilane, l,l,4,4-tetramethyl-l,4-disilabutane, trichlorosilane, dimethylsilane, di-tert-butylsilane, dichlorosilane, diethylsilane, diphenylsilane, phenylmethylsilane, n-hexylsilane, n- octadecylsilane, n-octylsilane, and phenylsilane. Examples for surface ligands are oleylamine, trioctylphosphine oxide, oleic acid, 1,2-hexadecanediol, trioctylphosphine, or any combination of the foregoing. Examples for devices where said transparent conductors are of use are: LCD display, a LED display, a photovoltaic device, a touch panel, a solar panel, a light emitting diode (LED), an organic light emitting diode (OLED), an OLED display, and a electrochromic window.
    • 本公开提供了生产超薄金属纳米线的方法和生产超薄铜细长纳米结构的方法。 还要求保护通过这些方法生产的金属纳米线,以及使用金属纳米线作为透明导体。 要求保护的方法包括以下步骤:a)形成包含硅烷基还原剂,铜金属盐和表面配体的反应混合物,其中表面配体也可以是溶剂; 和b)在搅拌或不搅拌下将反应混合物在1至48小时的升高的温度下加热并保持。 铜金属盐的例子是CuI,CuBr,CuCl,CuF,CuSCN,CuCl 2,CuBr 2,CuF 2,Cu(OH)2,Cu-D-葡萄糖酸盐,CuMoO 4,Cu(NO 3)2,Cu(Clo 4)2,CuP 2 O 7, CuSeO 3,CuSO 4,Cu-酒石酸盐,Cu(BF 4)2,Cu(NH 3)4 SO 4,并且包括前述的任何水合物。 为基于硅烷的还原剂的实例是:trietylsilane,三甲基硅烷,三异丙基硅烷,三苯基硅烷,三 - 正丙基硅烷,三 - 正己基硅烷,三乙氧基硅烷,三(三甲基硅氧基)硅烷,三(三甲基硅烷基)硅烷,二 - 叔butylmethylsilane,diethylmethylsilane ,diisopropylchlorosilane,二甲基氯硅烷,二甲基乙氧基硅烷,diphenylmethylsilane,ethyldimethylsilane,乙基二氯硅烷,甲基二氯硅烷,甲基二乙氧基硅烷,octadecyldimethylsilane,苯基二甲基硅烷,phenylmethylchlorosilane,1,1-,4,4-四甲基-1,4-二硅杂丁烷,三氯硅烷,二甲基硅烷,二叔丁基硅烷,二氯 二乙基硅烷,二苯基硅烷,苯基甲基硅烷,正己基硅烷,正十八烷基硅烷,正辛基硅烷和苯基硅烷。 表面配体的实例为油胺,氧化三辛基膦,油酸,1,2-十六烷二醇,三辛基膦或前述的任何组合。 其中所述透明导体有用的器件的例子是:LCD显示器,LED显示器,光伏器件,触摸板,太阳能电池板,发光二极管(LED),有机发光二极管(OLED),OLED 显示屏和电致变色窗口。
    • 5. 发明申请
    • METHODS TO PRODUCE ULTRA-THIN METAL NANOWIRES FOR TRANSPARENT CONDUCTORS
    • 用于制造透明导电体的超薄金属纳米线的方法
    • WO2016049430A1
    • 2016-03-31
    • PCT/US2015/052180
    • 2015-09-25
    • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    • YANG, PeidongSUN, JianweiYU, YiCUI, Fan
    • C07F1/08B22F9/24C01G3/00C01G3/04C01G3/05C01G3/08C07F7/08C07F7/12C07F7/18B22F1/00
    • C07F7/0896B22F1/0025B22F9/24B82B3/00C07F1/08C07F7/12C07F7/1844H01B1/02
    • The disclosure provides methods to produce ultrathin metal nanowires and methods to produce ultrathin copper elongated nanostructures. Also claimed are the metal nanowires produced by these methods, and the use of the metal nanowires as transparent conductors. The claimed method comprises the steps of: a) forming a reaction mixture comprising a silane-based reducing agent, a copper metal salt and a surface ligand, wherein the surface ligand may also be a solvent; and b) heating and maintaining the reaction mixture at an elevated temperature between 1 to 48 hours with or without stirring. Examples for copper metal salts are Cul, CuBr, CuCI, CuF, CuSCN, CuCI 2 , CuBr 2 , CuF 2 , Cu(OH) 2 , Cu-D-gluconate, CuMo04, Cu(N03)2, Cu(Clo4) 2, CuP 2 0 7 , CuSe03, CuS0 4 , Cu-tartrate, Cu(BF 4 ) 2 , Cu(NH 3 ) 4SO4, and including any hydrates of the foregoing. Examples for silane-based reducing agents are: trietylsilane, trimethylsilane, triisopropylsilane, triphenylsilane, tri-n-propylsilane, tri-n-hexylsilane, triethoxysilane, tris(trimethylsiloxy)silane, tris(trimethylsilyl)silane, di-tert- butylmethylsilane, diethylmethylsilane, diisopropylchlorosilane, dimethylchlorosilane, dimethylethoxysilane, diphenylmethylsilane, ethyldimethylsilane, ethyldichlorosilane, methyldichlorosilane, methyldiethoxysilane, octadecyldimethylsilane, phenyldimethylsilane, phenylmethylchlorosilane, l,l,4,4-tetramethyl-l,4-disilabutane, trichlorosilane, dimethylsilane, di-tert-butylsilane, dichlorosilane, diethylsilane, diphenylsilane, phenylmethylsilane, n-hexylsilane, n- octadecylsilane, n-octylsilane, and phenylsilane. Examples for surface ligands are oleylamine, trioctylphosphine oxide, oleic acid, 1,2-hexadecanediol, trioctylphosphine, or any combination of the foregoing. Examples for devices where said transparent conductors are of use are: LCD display, a LED display, a photovoltaic device, a touch panel, a solar panel, a light emitting diode (LED), an organic light emitting diode (OLED), an OLED display, and a electrochromic window.
    • 本公开提供了生产超薄金属纳米线的方法和生产超薄铜拉长纳米结构的方法。 还要求保护的是通过这些方法生产的金属纳米线,并且使用金属纳米线作为透明导体。 所要求保护的方法包括以下步骤:a)形成包含硅烷基还原剂,铜金属盐和表面配体的反应混合物,其中表面配体也可以是溶剂; 和b)在搅拌或不搅拌下,将反应混合物在升高的温度下加热和保持1至48小时。 铜金属盐的实例是Cul,CuBr,CuCl,CuF,CuSCN,CuCl 2,CuBr 2,CuF 2,Cu(OH)2,Cu-D-葡萄糖酸盐,CuMoO 4,Cu(NO 3)2,Cu(Clo 4)2,CuP 2 O 7, CuSeO 3,CuSO 4,Cu酒石酸盐,Cu(BF 4)2,Cu(NH 3)4 SO 4,并且包括前述的任何水合物。 硅烷类还原剂的实例有:三乙基硅烷,三甲基硅烷,三异丙基硅烷,三苯基硅烷,三正丙基硅烷,三正己基硅烷,三乙氧基硅烷,三(三甲基甲硅烷氧基)硅烷,三(三甲基甲硅烷基)硅烷,二叔丁基甲基硅烷,二乙基甲基硅烷 二异丙基氯硅烷,二甲基氯硅烷,二甲基乙氧基硅烷,二苯甲基硅烷,乙基二甲基硅烷,乙基二氯硅烷,甲基二氯硅烷,甲基二乙氧基硅烷,十八烷基二甲基硅烷,苯基二甲基硅烷,苯基甲基氯硅烷,1,1,4-四甲基-1,4-二硅烷,三氯硅烷,二甲基硅烷,二叔丁基硅烷,二氯硅烷 二乙基硅烷,二苯基硅烷,苯基甲基硅烷,正己基硅烷,正十八烷基硅烷,正辛基硅烷和苯基硅烷。 表面配体的实例是油胺,三辛基氧化膦,油酸,1,2-十六烷二醇,三辛基膦或前述的任何组合。 使用透明导体的器件的例子有:LCD显示器,LED显示器,光伏器件,触摸屏,太阳能电池板,发光二极管(LED),有机发光二极管(OLED),OLED 显示和电致变色窗。
    • 7. 发明申请
    • BASIC METAL NITRATE, METHOD FOR PRODUCING THE SAME AND GAS-GENERATING AGENT COMPOSITION
    • 基本金属硝酸盐,其生产方法和气体发生剂组合物
    • WO01023304A1
    • 2001-04-05
    • PCT/JP2000/006664
    • 2000-09-27
    • C01B21/48C01G1/08C01G3/08C06B31/00C06D5/06B60R21/26C06D5/00
    • C06D5/06C01B21/48C01G1/08C01G3/08C01P2002/74C01P2004/61C01P2004/62C01P2006/80C06B31/00
    • A basic metal nitrate, which satisfies one or more of the following requirements (a) to (d): (a) 0.5 to 40 mu m with respect to the diameter of a particle, (b) a half-width of a peak in X-ray analysis of 0.4 deg or less with respect to a crystallinity, (c) 220 DEG C with respect to the starting temperature for weight decrease in TG-DTA analysis, and (d) 1000 ppm or less in terms of Na atom with respect to the content of impurities; and a gas-generating agent for use in a gas generator for an air bag, which comprises (a) a tetrazole derivative, a guanidine derivative or a mixture thereof, (b) the basic metal nitrate and (c) a binder and/or a slag-forming agent. The nitrate has a good thermal stability and is suitable as an oxydizing agent for a gas-generating agent. The above-mentioned gas-generating agent is reduced in toxicity, exhibits high burn-up rate and has a low combustion temperature.
    • 一种碱金属硝酸盐,其满足以下要求(a)至(d)中的一个或多个:(a)相对于颗粒直径为0.5至40μm,(b)峰的半峰宽 相对于结晶度为0.4度以下的X射线分析,(c)相对于TG-DTA分析中的重量减少的起始温度为220℃,(d)以Na原子计为1000ppm以下, 尊重杂质含量; 和用于气囊的气体发生器的气体发生剂,其包含(a)四唑衍生物,胍衍生物或其混合物,(b)碱金属硝酸盐和(c)粘合剂和/或 造渣剂。 硝酸盐具有良好的热稳定性,适合用作气体发生剂的氧化剂。 上述气体发生剂的毒性降低,燃耗率高,燃烧温度低。