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11. 发明申请

US20090110337A1 Fluid bearing having improved wear properties 审中-公开
标题翻译：具有改善磨损性能的流体轴承
公开(公告)号：US20090110337A1
公开(公告)日：2009-04-30
申请号：US12290261
申请日：2008-10-29
申请人： Lei Jiang , Martin Bauer , Huseyin Taner Baytekin
发明人： Lei Jiang , Martin Bauer , Huseyin Taner Baytekin
IPC分类号： F16C32/06
CPC分类号： F16C33/107 , F16C17/026 , F16C17/107 , F16C2240/40
摘要： A radial fluid bearing having improved wear properties in the operating state of start-up and run-down, the bearing pattern being formed in the region between a bearing bush and a shaft engaging through the bearing bush and consisting of a plurality of grooves disposed at a distance from one another, characterized in that at least the groove depth of the radial bearing is made smaller than that of the prior art, a groove depth of less than 3 micrometers being preferred.
摘要翻译：一种径向流体轴承，其在启动和断开的操作状态下具有改善的磨损特性，所述轴承图案形成在轴承衬套与通过所述轴承衬套接合的轴之间的区域中，所述轴由多个槽组成，彼此相距一定的距离，其特征在于至少使径向轴承的槽深小于现有技术的凹槽深度，优选小于3微米的凹槽深度。

12. 发明申请

US20080213995A1 Ultrasonic electropolishing of conductive material 审中-公开
标题翻译：超声波电解抛光导电材料
公开(公告)号：US20080213995A1
公开(公告)日：2008-09-04
申请号：US11713215
申请日：2007-03-02
申请人： Tatyana N. Andryushchenko , Radek P. Chalupa , Anne E. Miller , Lei Jiang
发明人： Tatyana N. Andryushchenko , Radek P. Chalupa , Anne E. Miller , Lei Jiang
IPC分类号： H01L21/44 , C25D17/00
CPC分类号： C25D5/02 , C25D7/123 , C25F3/30 , H01L21/32115 , H01L21/7684
摘要： In one embodiment, the present invention includes a method for forming a dielectric layer on a semiconductor wafer and patterning at least one opening in the dielectric layer, depositing a barrier layer over the dielectric layer, depositing a conductive layer over the barrier layer, and electropolishing the conductive layer while ultrasonically agitating the semiconductor wafer until a predetermined amount of the conductive layer remains over the barrier layer. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，本发明包括一种用于在半导体晶片上形成电介质层并图案化介电层中的至少一个开口，在电介质层上沉积阻挡层，在阻挡层上沉积导电层和电解抛光导电层，同时超声搅拌半导体晶片，直到预定量的导电层保留在阻挡层上。描述和要求保护其他实施例。

13. 发明授权

US07288019B2 Method of changing the surface wettability of polymer materials 有权
标题翻译：改变聚合物材料的表面润湿性的方法
公开(公告)号：US07288019B2
公开(公告)日：2007-10-30
申请号：US10590395
申请日：2004-11-30
申请人： Chaowei Guo , Lin Feng , Lei Jiang
发明人： Chaowei Guo , Lin Feng , Lei Jiang
IPC分类号： B24B1/00
CPC分类号： B29C59/02 , B29C2059/027
摘要： The present invention belongs to the field of surface modification of solid materials, specifically relates to a method of changing the surface wettability of polymer materials. The method of the present invention comprises of rubbing the surface of the polymer materials various times by using sand paper of different grades (GB/T 15305) with a determined pressure at the ambient temperature, so as to change the contact angle of said surface of polymer material with water thereby changing the surface wettability of the polymer materials to different degrees. The method of the present invention has advantages of using devices that are simple, low cost, and the surface characteristics of the polymer materials could be changed from hydrophilicity to hydrophobicity, from hydrophobicity to super hydrophobicity, or from hydrophilicity to super hydrophilicity, at ambient temperature without any special requirement to the polymer materials or the preparation process thereof.
摘要翻译：本发明属于固体材料的表面改性领域，具体涉及改变聚合物材料的表面润湿性的方法。本发明的方法包括通过使用不同等级的砂纸（GB / T 15305）在环境温度下以确定的压力摩擦聚合物材料的表面，以便改变所述表面的接触角聚合物材料与水，从而将聚合物材料的表面润湿性改变到不同程度。本发明的方法具有使用简单，成本低廉的装置的优点，并且在环境温度下，聚合物材料的表面特性可以从亲水性变为疏水性，从疏水性变为超疏水性，或从亲水性变为超级亲水性对聚合物材料或其制备方法没有任何特殊要求。

14. 发明授权

US07021999B2 Rinse apparatus and method for wafer polisher 失效
标题翻译：晶圆抛光机的冲洗装置及方法
公开(公告)号：US07021999B2
公开(公告)日：2006-04-04
申请号：US11099926
申请日：2005-04-05
申请人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
发明人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.
摘要翻译：一种用于抛光晶片的装置，包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。冲洗输送导管包括多个喷嘴以分配冲洗液体。在一个实施例中，多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体，而不是在远离中心的漂洗输送导管末端。在另一个实施例中，冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

15. 发明申请

US20050181709A1 Rinse apparatus and method for wafer polisher 失效
标题翻译：晶圆抛光机的冲洗装置及方法
公开(公告)号：US20050181709A1
公开(公告)日：2005-08-18
申请号：US11099926
申请日：2005-04-05
申请人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
发明人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
IPC分类号： B24B37/04 , B24B53/007 , B24B1/00
CPC分类号： B24B53/017
摘要： An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.
摘要翻译：一种用于抛光晶片的装置，包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。冲洗输送导管包括多个喷嘴以分配冲洗液体。在一个实施例中，多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体，而不是在远离中心的漂洗输送导管末端。在另一个实施例中，冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

16. 发明授权

US06908370B1 Rinse apparatus and method for wafer polisher 失效
公开(公告)号：US06908370B1
公开(公告)日：2005-06-21
申请号：US10728550
申请日：2003-12-04
申请人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
发明人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
IPC分类号： B24B37/04 , B24B53/007 , B24B1/00
CPC分类号： B24B53/017
摘要： An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

17. 发明申请

US20050124267A1 RINSE APPARATUS AND METHOD FOR WAFER POLISHER 失效
标题翻译：用于波轮抛光的冲洗装置和方法
公开(公告)号：US20050124267A1
公开(公告)日：2005-06-09
申请号：US10728550
申请日：2003-12-04
申请人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
发明人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
IPC分类号： B24B37/04 , B24B53/007 , B24B1/00
CPC分类号： B24B53/017
摘要： An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.
摘要翻译：一种用于抛光晶片的装置，包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。冲洗输送管道包括多个喷嘴以分配冲洗液体。在一个实施例中，多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体，而不是在远离中心的漂洗输送导管末端。在另一个实施例中，冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

18. 发明申请

US20090247547A1 HYDROXAMATE-BASED INHIBITORS OF DEACETYLASES B 有权
标题翻译：脱乙酰壳多糖基抑制剂B
公开(公告)号：US20090247547A1
公开(公告)日：2009-10-01
申请号：US12411715
申请日：2009-03-26
申请人： Michael SHULTZ , Christine Hiu-Tung Chen , Young Shin Cho , Lei Jiang , Jianmei Fan , Gang Liu , Dyuti Majumdar
发明人： Michael SHULTZ , Christine Hiu-Tung Chen , Young Shin Cho , Lei Jiang , Jianmei Fan , Gang Liu , Dyuti Majumdar
IPC分类号： A61K31/496 , C07D209/04 , A61K31/404 , C12N5/00 , C07D261/06 , A61K31/42 , C07D231/10 , A61K31/415 , C07D471/02 , A61K31/437 , C07D207/00 , A61K31/40 , C07D401/02 , A61K31/4439 , C07D403/14 , A61K31/497 , A61P35/00 , A61P25/00 , A61P37/06 , A61P29/00 , A61P31/10
CPC分类号： C07D207/08 , C07D401/06 , C07D403/06 , C07D405/06 , C07D413/06 , C07D471/04
摘要： The present teachings relate to compounds of Formula I: and pharmaceutically acceptable salts, hydrates, esters, and prodrugs thereof, wherein R1, R2, R3, Y, Z, and are as defined herein.The present teachings also provide methods of preparing compounds of Formula I and methods of using compounds of Formula I in treating, inhibiting, or preventing pathologic conditions or disorders mediated wholly or in part by deacetylases.
摘要翻译：本发明涉及式I化合物及其药学上可接受的盐，水合物，酯和前药，其中R1，R2，R3，Y，Z和如本文所定义。本教导还提供制备式I化合物的方法和使用式I化合物治疗，抑制或预防全部或部分由脱乙酰酶介导的病理状况或病症的方法。

19. 发明申请

US20060138087A1 Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries 审中-公开
标题翻译：含铜磨料颗粒以改善铜CMP浆料的反应性和性能
公开(公告)号：US20060138087A1
公开(公告)日：2006-06-29
申请号：US11026322
申请日：2004-12-29
申请人： Harsono Simka , Sadasivan Shankar , Lei Jiang , Paul Fischer , Anne Miller , Kenneth Cadien
发明人： Harsono Simka , Sadasivan Shankar , Lei Jiang , Paul Fischer , Anne Miller , Kenneth Cadien
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1445
摘要： A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a plurality of copper-based metal abrasive particles, wherein the copper in the copper-based metal is capable of dissolving into the slurry and forming copper ion complexes. During the chemical mechanical polishing process, the copper removal rate may be selectively increased by increasing the concentration of copper metal abrasive particles in the slurry, and the copper removal rate may be selectively decreased by decreasing the concentration of copper metal abrasive particles in the slurry.
摘要翻译：用于在基板上平面化铜基金属结构的化学机械抛光工艺中的浆料包括氧化剂，有机络合剂，表面活性剂和多种铜基金属磨料颗粒，其中铜基金属能够溶解到浆料中并形成铜离子络合物。在化学机械抛光过程中，通过增加浆料中铜金属磨粒的浓度可以选择性地提高铜的去除速率，并且通过降低浆料中的铜金属磨料颗粒的浓度可以选择性地降低铜的去除速率。

20. 发明授权

US06883153B2 Minimization of microelectronic interconnect thickness variations 失效
标题翻译：微电子互连厚度变化的最小化
公开(公告)号：US06883153B2
公开(公告)日：2005-04-19
申请号：US10340534
申请日：2003-01-10
申请人： Lei Jiang , Sadasivan Shankar
发明人： Lei Jiang , Sadasivan Shankar
IPC分类号： G06F17/10 , G06F17/50 , G06F19/00 , H01L21/768
CPC分类号： B24B37/042 , H01L21/7684
摘要： An efficient TCAD tool to analyze the variation of topography and thickness of interconnects and components of integrated circuits introduced by multiple-layer chemical-mechanical planarization (CMP). Contact stress distribution is determined on all scales as a function of topography. A formulation is used relating the pad deformation and therefore stress directly to pattern topography ({d}), and the pad mechanical properties. The 3-dimensional stress and deformation field is described, along with representation of the statistical pad roughness and slurry thickness information. These process conditions are also functions of the surface topography and contact regimes. The stress-topography relationship is represented as [A]{P}={d}, where [A] is the influence coefficient matrix determined by the contact mechanics, and {P} and {d} represent local stress and topography on patterns. With given initial topography and slurry rate kinetics, the surface evolution at each time step of CMP can be traced iteratively to obtain post-CMP topography.
摘要翻译：一种有效的TCAD工具，用于分析由多层化学机械平面化（CMP）引入的集成电路的互连和部件的形貌和厚度的变化。接触应力分布在所有尺度上作为地形的函数确定。使用一种配方来将焊盘变形和因此的应力直接与图案形貌（{d}）和焊盘的机械性能有关。描述了三维应力和变形场，以及统计垫粗糙度和浆料厚度信息的表示。这些工艺条件也是表面形貌和接触方式的功能。应力 - 形貌关系表示为[A] {P} = {d}，其中[A]是由接触力学确定的影响系数矩阵，{P}和{d}表示模式上的局部应力和形貌。随着给定的初始形貌和浆料速率动力学，CMP的每个时间步长的表面演化可以迭代地追溯到获得CMP后的形貌。

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