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41. 发明申请

US20060280414A1 Fiber-coupled single photon source 有权
标题翻译：光纤耦合单光子源
公开(公告)号：US20060280414A1
公开(公告)日：2006-12-14
申请号：US11149511
申请日：2005-06-10
申请人： Raymond Beausoleil , Sean Spillane , Philip Kuekes , Duncan Stewart , M. Islam
发明人： Raymond Beausoleil , Sean Spillane , Philip Kuekes , Duncan Stewart , M. Islam
IPC分类号： G02B6/02 , G02B6/032
CPC分类号： G02B6/4202 , B82Y20/00 , G02B6/02314 , G02B6/02328 , G02B6/107 , G02B6/423 , H01S5/02284 , H01S5/026 , H01S5/1032 , H01S5/1042 , H01S5/105 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S5/423 , Y10S977/951
摘要： A device comprising a single photon generator and a waveguide, wherein a single photon generated by the single photon generator is coupled to the waveguide
摘要翻译：一种包括单个光子发生器和波导的器件，其中由单个光子发生器产生的单个光子耦合到波导

42. 发明授权

US4514621A Firing range 失效
标题翻译：射击范围
公开(公告)号：US4514621A
公开(公告)日：1985-04-30
申请号：US542550
申请日：1983-10-17
申请人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
发明人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
IPC分类号： B23K11/14 , B21F27/10 , B23K11/00 , B23K11/10 , F41G3/26 , F41J5/00 , F41J5/12 , G01H3/00 , G01S5/18 , G01S5/22 , G01S7/521 , H04R1/00 , H04R17/00 , G06F15/20
CPC分类号： F41G3/26 , F41J5/12 , G01S5/22 , Y10S367/906
摘要： An apparatus for use in a firing range, in which transducers located adjacent the target area detect the airborne shock wave from supersonic projectiles. The position at which each projectile passes through the target plane is determined from the relative time of arrival of the associated shock wave at the transducers. A visual display of the target and the projectile position is provided for the use of range personnel.
摘要翻译：一种用于击发范围的装置，其中位于目标区域附近的换能器检测来自超音速射弹的空中冲击波。每个抛射体通过目标平面的位置由相关联的冲击波到达换能器的相对时间确定。提供目标和射弹位置的视觉显示，以供范围人员使用。

43. 发明授权

US4281241A Firing range 失效
标题翻译：射击范围
公开(公告)号：US4281241A
公开(公告)日：1981-07-28
申请号：US51218
申请日：1979-06-22
申请人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
发明人： Lindsay C. Knight , David A. Cash , Duncan Stewart , Robert A. Cottis , William H. Bowyer , Robert C. Newnham , Frederick J. Williams , David W. Pardon
IPC分类号： B23K11/14 , B21F27/10 , B23K11/00 , B23K11/10 , F41G3/26 , F41J5/00 , F41J5/12 , G01H3/00 , G01S5/18 , G01S5/22 , G01S7/521 , H04R1/00 , H04R17/00 , G06F15/20
CPC分类号： F41G3/26 , F41J5/12 , G01S5/22 , Y10S367/906
摘要： An apparatus for use in a firing range, in which transducers located adjacent the target area detect the airborne shock wave from supersonic projectiles. The position at which each projectile passes through the target plane is determined from the relative time of arrival of the associated shock wave at the transducers. A visual display of the target and the projectile position is provided for the use of range personnel.
摘要翻译：一种用于击发范围的装置，其中位于目标区域附近的换能器检测来自超音速射弹的空中冲击波。每个抛射体通过目标平面的位置由相关联的冲击波到达换能器的相对时间确定。提供目标和射弹位置的视觉显示，以供范围人员使用。

44. 发明授权

US08768132B2 Ridge waveguide 有权
标题翻译：脊波导
公开(公告)号：US08768132B2
公开(公告)日：2014-07-01
申请号：US12253196
申请日：2008-10-16
申请人： Duncan Stewart , Marco Florentino , Nathaniel Quitoriano , Charles Santori
发明人： Duncan Stewart , Marco Florentino , Nathaniel Quitoriano , Charles Santori
IPC分类号： G02B6/10
CPC分类号： G02B6/136 , G02B2006/12097
摘要： A ridge waveguide with decreased optical losses from surface scattering includes a ridge waveguide with etched surfaces and an optical layer deposited on the ridge waveguide that substantially covers the etched surfaces. A method of reducing optical energy losses from scattering at etched surfaces of a ridge waveguide includes depositing a layer of optical material over the etched surfaces, the layer of optical material filling surface irregularities in the etched surfaces.
摘要翻译：具有从表面散射减少的光损失的脊波导包括具有蚀刻表面的脊波导和沉积在脊波导上的基本上覆盖蚀刻表面的光学层。降低脊波导蚀刻表面散射光能损失的方法包括在蚀刻表面上沉积光学材料层，该光学材料层填充蚀刻表面中的表面凹凸。

45. 发明授权

US08614432B2 Crystalline silicon-based memristive device with multiple mobile dopant species 有权
标题翻译：具有多种移动掺杂物种的晶体硅基忆阻器件
公开(公告)号：US08614432B2
公开(公告)日：2013-12-24
申请号：US13139557
申请日：2009-01-15
申请人： Matthew D Pickett , Duncan Stewart
发明人： Matthew D Pickett , Duncan Stewart
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/00 , G11C13/0069 , G11C2013/009 , G11C2213/33 , G11C2213/77 , H01L27/2463 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/148
摘要： A memristive device includes a first and a second electrode; a silicon memristive matrix interposed between the first electrode and the second electrode; and a mobile dopant species within the silicon memristive matrix which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture containing a silicon memristive matrix includes: applying a programming electrical field by applying a voltage bias across a first conductor and a second conductor; a silicon memristive matrix containing mobile dopants being interposed between the first conductor and the second conductor, the programming voltage repositioning the mobile dopants within the silicon memristive matrix; and reading a state of the silicon memristive matrix by applying a reading energy across the silicon memristive matrix, the reading energy producing a measurable indication of the state of the silicon memristive matrix.
摘要翻译：忆阻器包括第一和第二电极; 插入在所述第一电极和所述第二电极之间的硅忆阻矩阵; 以及硅忆阻矩阵内的移动掺杂剂物质，其响应于编程电场而移动并且在去除编程电场之后保持基本上就位。一种使用包含硅忆阻矩阵的交叉结构的方法包括：通过在第一导体和第二导体上施加电压偏置来施加编程电场; 含有移动掺杂剂的硅忆阻矩阵插入在第一导体和第二导体之间，编程电压重新定位硅忆阻矩阵内的移动掺杂剂; 并且通过在硅忆阻矩阵上施加读取能来读取硅忆阻矩阵的状态，所述读取能产生硅忆阻矩阵的状态的可测量指示。

46. 发明授权

US08529418B2 Balance therapy system 失效
标题翻译：平衡治疗系统
公开(公告)号：US08529418B2
公开(公告)日：2013-09-10
申请号：US12758506
申请日：2010-04-12
申请人： Duncan Stewart , Thomas D. Meyer , Travis J. Miller , Holden D. Leute , Christopher M. Schroer
发明人： Duncan Stewart , Thomas D. Meyer , Travis J. Miller , Holden D. Leute , Christopher M. Schroer
IPC分类号： A63B22/16
CPC分类号： A63B26/003 , A63B21/00069 , A63B21/015 , A63B22/18 , A63B24/0062 , A63B69/0053 , A63B2024/0009 , A63B2024/0012 , A63B2024/0068 , A63B2208/0204 , A63B2220/24 , A63B2225/20 , A63B2225/30
摘要： A balance board including a standing platform connected to a pivot ball. The standing platform provides an area for a subject to stand and can be moved by a set of deflector actuators. The deflector actuators can move the platform in both the lateral and vertical directions. A braking assembly is connected to the ball and the braking assembly increases or decreases rotation resistance to the ball. When resistance is increased to the ball, resistance to rotation for the platform is increased.
摘要翻译：平衡板，包括连接到枢轴球的立式平台。站立平台为主体提供一个区域，可以由一组偏转器执行器移动。偏转器致动器可以在横向和垂直方向上移动平台。制动组件连接到球，并且制动组件增加或减小对球的旋转阻力。当电阻增加到球时，平台的旋转阻力增加。

47. 发明授权

US08507968B2 Memristive transistor memory 有权
标题翻译：记忆晶体管存储器
公开(公告)号：US08507968B2
公开(公告)日：2013-08-13
申请号：US13142581
申请日：2009-01-30
申请人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
发明人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： G11C13/0002 , B82Y10/00 , H01L29/41758 , H01L29/517 , H01L29/685 , H01L29/775
摘要： A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
摘要翻译：存储器件（100）包括在源极区域（132）和漏极区域（134）之间包括源极区域（132），漏极区域（134）和沟道区域（130）的半导体器件。覆盖沟道区的栅极结构包括覆盖在忆阻部分（120）上的忆阻部分（120）和导电部分（110）。

48. 发明授权

US08471234B2 Multilayer memristive devices 有权
标题翻译：多层忆阻器
公开(公告)号：US08471234B2
公开(公告)日：2013-06-25
申请号：US13130815
申请日：2009-01-20
申请人： William M. Tong , Nathaniel J. Quitoriano , Duncan Stewart , Philip J. Kuekes
发明人： William M. Tong , Nathaniel J. Quitoriano , Duncan Stewart , Philip J. Kuekes
IPC分类号： H01L47/00
CPC分类号： H01L21/26586 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165
摘要： A multilayer memristive device includes a first electrode; a second electrode; a first memristive region and a second memristive region which created by directional ion implantation of dopant ions and are interposed between the first electrode and the second electrode; and mobile dopants which move within the first memristive region and the second memristive region in response to an applied electrical field.
摘要翻译：多层记忆装置包括第一电极; 第二电极; 通过定向离子注入掺杂剂离子而形成的第一忆阻区和第二忆阻区，并且介于第一电极和第二电极之间; 以及响应于施加的电场在第一忆阻区域和第二忆阻区域内移动的移动掺杂剂。

49. 发明授权

US08202012B2 Electro-optical connector and methods for aligning 有权
标题翻译：电光连接器和对准方法
公开(公告)号：US08202012B2
公开(公告)日：2012-06-19
申请号：US12263352
申请日：2008-10-31
申请人： Duncan Stewart , Paul Rosenberg , Michael Tan
发明人： Duncan Stewart , Paul Rosenberg , Michael Tan
IPC分类号： G02B6/42
CPC分类号： G02B6/3817 , G02B6/3882 , G02B6/3886 , G02B6/4292 , H01R13/629 , H01R13/6315
摘要： An electro-optical connector including a first connector end and a second connector end. The first connector end is coupled to a first electro-optical device. The second connector end coupled to a second electro-optical device. The second connector is flexibly coupled to a connector base so a second connector face can move flexibly with respect to a first connector face. A force mechanism on at least one connector end applies a force on an interface between the first connector end and the second connector end. The force is applied when the first connector face is within a predefined proximity of the second connector face. A mechanical guide on the connector end can align the first connector face with the second connector face when the force mechanism applies the force. The connector end for the force mechanism or the mechanical guide can be the first connector end or the second connector end.
摘要翻译：一种电光连接器，包括第一连接器端和第二连接器端。第一连接器端耦合到第一电光装置。第二连接器端连接到第二电光装置。第二连接器柔性地联接到连接器基座，使得第二连接器面可以相对于第一连接器面灵活地移动。至少一个连接器端部上的力机构在第一连接器端部和第二连接器端部之间的界面上施加力。当第一连接器面在第二连接器面的预定义接近范围内时施加力。当力机构施加力时，连接器端上的机械引导件可将第一连接器面与第二连接器面对准。用于力机构或机械引导件的连接器端可以是第一连接器端或第二连接器端。

50. 发明申请

US20110266513A1 Superconductor Memristor Devices 有权
标题翻译：超导体忆阻器
公开(公告)号：US20110266513A1
公开(公告)日：2011-11-03
申请号：US13142582
申请日：2009-01-26
申请人： R. Stanley Williams , Jianhua Yang , Duncan Stewart
发明人： R. Stanley Williams , Jianhua Yang , Duncan Stewart
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译：本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。

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