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41. 发明申请

US20070296061A1 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
标题翻译： III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20070296061A1
公开(公告)日：2007-12-27
申请号：US11578242
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota , Seiji Nakahata
IPC分类号： H01L29/20 , C03B17/00
CPC分类号： C30B9/08 , C30B9/00 , C30B11/00 , C30B11/06 , C30B29/403
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

42. 发明授权

US07297625B2 Group III-V crystal and manufacturing method thereof 失效
标题翻译： III-V族晶体及其制造方法
公开(公告)号：US07297625B2
公开(公告)日：2007-11-20
申请号：US10521060
申请日：2004-04-01
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/28
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
摘要： A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Additionally, a method of manufacturing a group III-V crystal, characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
摘要翻译：即使在使用各种基板的情况下，也能够以低成本容易地获得优质III-V族晶体而不引起裂纹的制造III-V族晶体的方法。一种制造III-V族晶体的方法，其特征在于包括：在基片（1）上沉积金属膜（2）的步骤; 在存在图案化化合物的气氛中对金属膜（2）进行热处理的工序; 以及在热处理后在金属膜上生长III-V族晶体（4）的步骤。另外，制造III-V族晶体的方法，其特征在于包括：在热处理后在金属膜上生长III-V族化合物缓冲膜的步骤; 以及在III-V族化合物缓冲膜上生长III-V族晶体的步骤。

43. 发明申请

US20050227472A1 Group III-V Crystal and Manufacturing method thereof 失效
标题翻译： III-V族晶体及其制造方法
公开(公告)号：US20050227472A1
公开(公告)日：2005-10-13
申请号：US10521060
申请日：2004-04-01
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： C30B29/40 , C30B25/02 , C30B25/18 , C30B29/38 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/32 , H01L33/34 , H01S5/323 , H01L21/3205
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
摘要： A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Additionally, a method of manufacturing a group III-V crystal, characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
摘要翻译：即使在使用各种基板的情况下，也能够以低成本容易地获得优质III-V族晶体而不产生裂纹的方法制造III-V族晶体的方法。一种制造III-V族晶体的方法，其特征在于包括：在基片（1）上沉积金属膜（2）的步骤; 在存在图案化化合物的气氛中对金属膜（2）进行热处理的工序; 以及在热处理后在金属膜上生长III-V族晶体（4）的步骤。另外，制造III-V族晶体的方法，其特征在于包括：在热处理后在金属膜上生长III-V族化合物缓冲膜的步骤; 以及在III-V族化合物缓冲膜上生长III-V族晶体的步骤。

44. 发明申请

US20050098090A1 Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal 审中-公开
标题翻译： III族氮化物晶体，其制造方法，以及第III族氮化物晶体的制造设备
公开(公告)号：US20050098090A1
公开(公告)日：2005-05-12
申请号：US10904249
申请日：2004-11-01
申请人： Ryu Hirota , Seiji Nakahata
发明人： Ryu Hirota , Seiji Nakahata
IPC分类号： C30B29/38 , C30B9/00 , C30B9/12 , C30B17/00 , C30B29/40 , C30B1/00 , C30B11/00 , C30B21/02 , C30B28/06
CPC分类号： C30B9/00 , C30B29/403 , C30B29/406
摘要： Affords Group III nitride crystals whose crystal growth rate is extensive, methods of their manufacture, and equipment for manufacturing such Group III nitride crystals. The manufacturing methods include: a melt-formation step, within a reaction vessel (21), of forming around a seed crystal (2) a melt (1) containing at least a Group III element and a catalyst; and a crystal-growth step of supplying a nitrogen-containing substance (3) to the melt (1) to grow a Group III nitride crystal (4) onto the seed crystal (2); characterized in controlling temperature so that in the crystal-growth step, the temperature of the melt (1) lowers from the interface (13) between the melt (1) and the nitrogen-containing substance (3), through to the interface (12) between the melt (1) and the seed crystal (2) or to the interface (14) between the melt (1) and the Group III nitride crystal (4) having grown onto the seed crystal (2).
摘要翻译：提供其晶体生长速率广泛的III族氮化物晶体，其制造方法以及用于制造这种III族氮化物晶体的设备。制造方法包括：在反应容器（21）内形成围绕晶种（2）形成含有至少III族元素和催化剂的熔体（1）的熔融形成步骤; 以及向所述熔体（1）供给含氮物质（3）以在所述晶种（2）上生长III族氮化物晶体（4）的晶体生长步骤。其特征在于控制温度使得在晶体生长步骤中，熔体（1）的温度从熔体（1）和含氮物质（3）之间的界面（13）降低到界面（12））和熔融物（1）和生长在晶种（2）上的III族氮化物晶体（4）之间的界面（14）之间的熔融物（1）和晶种（2）之间的界面（14）。

45. 发明授权

US07905958B2 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device 有权
标题翻译： III族氮化物半导体晶体及其制造方法以及III族氮化物半导体器件
公开(公告)号：US07905958B2
公开(公告)日：2011-03-15
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B21/02
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

46. 发明授权

US07771532B2 Nitride semiconductor substrate and method of producing same 有权
公开(公告)号：US07771532B2
公开(公告)日：2010-08-10
申请号：US12388983
申请日：2009-02-19
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B28/14 , H01L31/00 , H01L21/00
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

47. 发明申请

US20090155989A1 NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME 有权
标题翻译：氮化物半导体基板及其制造方法
公开(公告)号：US20090155989A1
公开(公告)日：2009-06-18
申请号：US12388983
申请日：2009-02-19
申请人： Koji UEMATSU , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji UEMATSU , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts not burying the facets, maintaining the convex facet hills on Π and the network concavities on excluding dislocations in the facet hills down to the outlining concavities on forming a defect accumulating region H on decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面部分不包括小平面上的位错，直到减少小平面山丘的位错，改善小丘到低缺陷密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

48. 发明授权

US07485484B2 Group III-V crystal 有权
标题翻译： III-V族晶体
公开(公告)号：US07485484B2
公开(公告)日：2009-02-03
申请号：US11871162
申请日：2007-10-12
申请人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02538 , H01L21/02642 , H01S5/323 , Y10T428/12674 , Y10T428/12681
摘要： Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
摘要翻译：即使在使用各种基板时，也能以低成本容易地获得优质的III-V晶体而不引起裂纹。 III-V晶体通过制造方法获得，其特征在于包括：在基板（1）上沉积金属膜（2）的步骤; 在存在图案化化合物的气氛中对金属膜（2）进行热处理的工序; 以及在热处理后在金属膜上生长III-V族晶体（4）的步骤。或者，III-V晶体制造方法的特征在于包括：在热处理后在金属膜上生长III-V族化合物缓冲膜的步骤; 以及在III-V族化合物缓冲膜上生长III-V族晶体的步骤。

49. 发明申请

US20060272572A1 Nitride semiconductor substrate and method of producing same 有权
标题翻译：氮化物半导体衬底及其制造方法
公开(公告)号：US20060272572A1
公开(公告)日：2006-12-07
申请号：US11446955
申请日：2006-06-06
申请人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
发明人： Koji Uematsu , Fumitaka Sato , Ryu Hirota , Seiji Nakahata , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/403 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02642 , H01L21/02647
摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts γ, not burying the facets, maintaining the convex facet hills on Π and the network concavities on γ, excluding dislocations in the facet hills down to the outlining concavities on γ, forming a defect accumulating region H on γ, decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.
摘要翻译：氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面部分伽马，不掩埋小平面，保持Pi上的凸面小丘和γ上的网格凹面，不考虑小平面丘上的位错，直到伽马的轮廓凹面，在伽马上形成缺陷累积区H，减小刻面上的位错小丘，改善小缺陷密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

50. 发明申请

US20050164419A1 Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device 有权
标题翻译： III族氮化物晶体基板，其制造方法和III族氮化物半导体器件
公开(公告)号：US20050164419A1
公开(公告)日：2005-07-28
申请号：US10905845
申请日：2005-01-24
申请人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
发明人： Ryu Hirota , Seiji Nakahata , Masaki Ueno
IPC分类号： H01L21/205 , C30B19/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/208 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： C30B9/10 , C30B7/10 , C30B19/02 , C30B25/18 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02625
摘要： Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.
摘要翻译：提供位错密度低且制造成本低的III族氮化物晶体基板，制造这种基板的方法，以及掺入III族氮化物晶体基板的III族氮化物半导体器件。 III族氮化物晶体衬底制造方法包括：通过液相外延将第一III族氮化物晶体（2）生长到基底衬底（1）上的步骤; 以及通过气相外延将第二III族氮化物晶体（3）生长到第一III族氮化物晶体（2）上的步骤。通过这种制造方法制造的III族氮化物晶体基板的位错密度为1×10 7位错/ cm 2。

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