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1. 发明授权

US06888217B2 Capacitor for use in an integrated circuit 失效
标题翻译：用于集成电路的电容器
公开(公告)号：US06888217B2
公开(公告)日：2005-05-03
申请号：US09945555
申请日：2001-08-30
申请人： Brent Gilgen , Belford T. Coursey
发明人： Brent Gilgen , Belford T. Coursey
IPC分类号： H01L21/02 , H01L29/00 , H01L21/00
CPC分类号： H01L28/84 , H01L28/91
摘要： A capacitor including a first plate of conductive material that is formed in a predetermined shape. A layer of dielectric material is formed on at least a portion of the first plate and substantially conforms to the predetermined shape of the first plate. A second plate of conductive material is formed over the layer of dielectric material.
摘要翻译：一种电容器，包括形成为预定形状的导电材料的第一板。介电材料层形成在第一板的至少一部分上并基本上符合第一板的预定形状。在介电材料层上形成第二导电材料板。

2. 发明授权

US06688584B2 Compound structure for reduced contact resistance 有权
公开(公告)号：US06688584B2
公开(公告)日：2004-02-10
申请号：US09858617
申请日：2001-05-16
申请人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
发明人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
IPC分类号： H01L2940
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76889 , H01L23/485 , H01L27/10855 , H01L28/84 , H01L28/90 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

3. 发明授权

US06462353B1 Method for fabricating a small area of contact between electrodes 有权
标题翻译：用于制造电极之间的小面积接触的方法
公开(公告)号：US06462353B1
公开(公告)日：2002-10-08
申请号：US09703806
申请日：2000-11-02
申请人： Brent Gilgen
发明人： Brent Gilgen
IPC分类号： H01L4700
CPC分类号： H01L45/06 , G11C2213/52 , H01L27/2463 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.
摘要翻译：公开了一种用于硫族化物记忆体的电极结构。电极具有基本截头圆锥形状，并且优选地通过在氧化物图案下方蚀刻蚀刻多晶硅层来形成。通过这种结构，可以实现通过硫族化物材料的改善的电流密度。

4. 发明授权

US08450218B2 Methods of forming silicon oxides and methods of forming interlevel dielectrics 有权
标题翻译：形成硅氧化物的方法和形成层间电介质的方法
公开(公告)号：US08450218B2
公开(公告)日：2013-05-28
申请号：US13338484
申请日：2011-12-28
申请人： Yunjun Ho , Brent Gilgen
发明人： Yunjun Ho , Brent Gilgen
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02307 , H01L21/02326 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76897
摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.
摘要翻译：形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。包含氮化硅的材料具有最高的最外面的含氮化硅的表面。这种表面用体积至少为99.5％H 2 O的流体处理。包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。考虑其他实现。

5. 发明授权

US07545009B2 Word lines for memory cells 有权
标题翻译：记忆单元的字线
公开(公告)号：US07545009B2
公开(公告)日：2009-06-09
申请号：US11072159
申请日：2005-03-04
申请人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
发明人： Ravi Iyer , Yongjun Jeff Hu , Luan Tran , Brent Gilgen
IPC分类号： H01L29/78
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76889 , H01L23/485 , H01L27/10855 , H01L28/84 , H01L28/90 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.
摘要翻译：使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。每种难熔金属材料是含有难熔金属和杂质的导电材料。第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

6. 发明申请

US20050161721A1 Word lines for memory cells 有权
标题翻译：记忆单元的字线
公开(公告)号：US20050161721A1
公开(公告)日：2005-07-28
申请号：US11072159
申请日：2005-03-04
申请人： Ravi Iyer , Yongjun Hu , Luan Tran , Brent Gilgen
发明人： Ravi Iyer , Yongjun Hu , Luan Tran , Brent Gilgen
IPC分类号： H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L29/45 , H01L27/108
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76849 , H01L21/76855 , H01L21/7687 , H01L21/76889 , H01L23/485 , H01L27/10855 , H01L28/84 , H01L28/90 , H01L29/456 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.
摘要翻译：使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。每种难熔金属材料是含有难熔金属和杂质的导电材料。第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

7. 发明申请

US20050090070A1 Capacitor for use in an integrated circuit 有权
公开(公告)号：US20050090070A1
公开(公告)日：2005-04-28
申请号：US10931718
申请日：2004-09-01
申请人： Brent Gilgen , Belford Coursey
发明人： Brent Gilgen , Belford Coursey
IPC分类号： H01L21/02 , H01L21/20 , B41N1/00 , B41N3/00
CPC分类号： H01L28/84 , H01L28/91
摘要： A capacitor including a first plate of conductive material that is formed in a predetermined shape. A layer of dielectric material is formed on at least a portion of the first plate and substantially conforms to the predetermined shape of the first plate. A second plate of conductive material is formed over the layer of dielectric material.

8. 发明申请

US20120100726A1 Methods of Forming Silicon Oxides and Methods of Forming Interlevel Dielectrics 有权
标题翻译：形成氧化硅的方法和形成介电层的方法
公开(公告)号：US20120100726A1
公开(公告)日：2012-04-26
申请号：US13338484
申请日：2011-12-28
申请人： Yunjun Ho , Brent Gilgen
发明人： Yunjun Ho , Brent Gilgen
IPC分类号： H01L21/316 , H01L21/3105
CPC分类号： H01L21/02164 , H01L21/02222 , H01L21/02307 , H01L21/02326 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76897
摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.
摘要翻译：形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。包含氮化硅的材料具有最高的最外面的含氮化硅的表面。用体积为至少99.5％H 2 O的流体处理该表面。包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。考虑其他实现。

9. 发明申请

US20110204453A1 Methods Of Forming Electrically Conductive Lines, Methods Of Forming An Electrically Conductive Buried Line And An Electrical Contact Thereto, Electrically Conductive Lines, And Integrated Circuitry Comprising A Line Of Recessed Access Devices 有权
标题翻译：形成导电线的方法，形成导电埋地线和与其接触的电导线，以及包括嵌入式接入装置的集成电路的方法
公开(公告)号：US20110204453A1
公开(公告)日：2011-08-25
申请号：US12710981
申请日：2010-02-23
申请人： Brent Gilgen
发明人： Brent Gilgen
IPC分类号： H01L29/78 , H01L21/336 , H01L23/48 , H01L21/768
CPC分类号： H01L21/743 , H01L23/48 , H01L23/535 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an electrically conductive buried line and an electrical contact thereto includes forming of a longitudinally elongated conductive line within a trench in substrate material. A longitudinal end part thereof within the trench is of spoon-like shape having a receptacle. The receptacle is filled with conductive material. Insulative material is formed over the conductive material that is within the receptacle. A contact opening is formed over the conductive material that is within the receptacle. Conductor material is formed in the contact opening in electrical connection with the second conductive material that is within the receptacle. Other method and device implementations are disclosed.
摘要翻译：形成导电掩埋线及其电接触的方法包括在衬底材料的沟槽内形成纵向细长的导电线。沟槽内的纵向端部具有勺子形状，具有容器。容器中填充有导电材料。绝缘材料形成在容器内的导电材料上。在位于容器内的导电材料上形成接触开口。导体材料形成在接触开口中，与位于容器内的第二导电材料电连接。公开了其它方法和设备实现。

10. 发明授权

US07115970B2 Capacitor for use in an integrated circuit 有权
标题翻译：用于集成电路的电容器
公开(公告)号：US07115970B2
公开(公告)日：2006-10-03
申请号：US10931718
申请日：2004-09-01
申请人： Brent Gilgen , Belford T. Coursey
发明人： Brent Gilgen , Belford T. Coursey
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L28/84 , H01L28/91
摘要： Capacitors for use in an integrated circuit are provided. One aspect of this disclosure relates to a method of making a capacitor. According to various embodiments of the method a bottom electrode adapted to act as an etch stop is formed, a substantially cone-shaped first plate of conductive material is formed having an interior and exterior surface and terminating at the bottom electrode, a layer of dielectric material is formed on at least a portion of the interior and exterior surface of the first plate and substantially conforming to the shape of the first plate, and a second plate of conductive material is formed over the layer of dielectric material. Other aspects and embodiments are provided herein.
摘要翻译：提供了用于集成电路的电容器。本公开的一个方面涉及一种制造电容器的方法。根据该方法的各种实施例，形成适于用作蚀刻停止件的底部电极，形成具有内部和外部表面并终止于底部电极的大致锥形的第一导电材料板，介电材料层形成在第一板的内表面和外表面的至少一部分上并且基本上符合第一板的形状，并且在电介质材料层上形成导电材料的第二板。本文提供了其它方面和实施例。

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