专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100095979A1 REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 失效
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：US20100095979A1
公开(公告)日：2010-04-22
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B7/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

2. 发明申请

US20080006650A1 Method and apparatus for multi-chamber exhaust control 审中-公开
标题翻译：多室排气控制的方法和装置
公开(公告)号：US20080006650A1
公开(公告)日：2008-01-10
申请号：US11475687
申请日：2006-06-27
申请人： Ming-Kuei Tseng , Natarajan Ramanan , Tetsuya Ishikawa , Sudhir R. Gondhalekar
发明人： Ming-Kuei Tseng , Natarajan Ramanan , Tetsuya Ishikawa , Sudhir R. Gondhalekar
IPC分类号： G01F11/00 , B67B7/00
CPC分类号： G05D16/202 , H01L21/67017 , H01L21/6719
摘要： A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust. The method further includes monitoring a first chamber pressure in the first chamber, a second chamber pressure in the second chamber, and a dispense pressure in the dispense arm area, and adjusting a flow through at least one of the first exhaust path, the second exhaust path, and the dispense arm area exhaust to maintain the first chamber pressure and the second chamber pressure at a value higher than the dispense pressure.
摘要翻译：一种操作多室模块的方法，该多室模块包括位于第一室和第二室之间的第一室，第二室和分配臂区域。该方法包括使处理气体流入第一室，第二室和分配臂区域。该方法还包括使用与共用排气流体连通的第一排气路径从第一室排出第一气体，使用与共用排气流体连通的第二排气通道从第二室排出第二气体，以及排出第三气体来自分配臂区域的气体使用与共用排气流体连通的分配臂区域排气。该方法还包括监测第一室中的第一室压力，第二室中的第二室压力和分配臂区域中的分配压力，以及调节通过第一排气路径，第二排气中的至少一个的流量路径和分配臂区域排气以将第一室压力和第二室压力保持在高于分配压力的值。

3. 发明申请

US20120103970A1 HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
标题翻译：加热器具有独立的中心区域控制
公开(公告)号：US20120103970A1
公开(公告)日：2012-05-03
申请号：US13099220
申请日：2011-05-02
申请人： Dmitry Lubomirsky , Sudhir R. Gondhalekar , Shankar Venkataraman , Kirby H. Floyd , Yizhen Zhang
发明人： Dmitry Lubomirsky , Sudhir R. Gondhalekar , Shankar Venkataraman , Kirby H. Floyd , Yizhen Zhang
IPC分类号： H05B3/74 , H05B3/02
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译：一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其联接到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度衬底的上表面支撑。

4. 发明授权

US07967913B2 Remote plasma clean process with cycled high and low pressure clean steps 失效
标题翻译：远程等离子清洁工艺，循环高低压清洁步骤
公开(公告)号：US07967913B2
公开(公告)日：2011-06-28
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式