专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08404569B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
公开(公告)号：US08404569B2
公开(公告)日：2013-03-26
申请号：US12949268
申请日：2010-11-18
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

2. 发明授权

US08227826B2 Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture 有权
标题翻译：存储GaN衬底，存储衬底和半导体器件的方法及其制造方法
公开(公告)号：US08227826B2
公开(公告)日：2012-07-24
申请号：US12877086
申请日：2010-09-07
申请人： Hideyuki Ijiri , Seiji Nakahata
发明人： Hideyuki Ijiri , Seiji Nakahata
IPC分类号： H01L27/15 , H01L29/267 , H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L33/0075 , C30B29/406 , C30B33/00
摘要： Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the direction, and from 0° to 1° in the direction.
摘要翻译：提供一种存储可以制造具有良好特性的半导体器件的GaN衬底的方法，存储的衬底以及半导体器件以及制造半导体器件的方法。在GaN衬底存储方法中，将GaN衬底（1）储存在氧气浓度为18体积％的气氛中。％以下，和/或12g / m 3以下的水蒸气浓度。通过存储方法储存的GaN衬底上的第一主面的表面粗糙度Ra和第二主面的粗糙度Ra分别为不大于20nm且不大于20μm。此外，使GaN基板使得主面与（0001）面在<100°方向上形成从0.05°至2°的偏轴角度，并且在<0001方向上从0°到1°， 11 20>方向。

3. 发明申请

US20070148920A1 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US20070148920A1
公开(公告)日：2007-06-28
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

4. 发明授权

US08476158B2 Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture 有权
标题翻译：制备和存储GaN衬底，制备和存储的GaN衬底的方法以及半导体器件及其制造方法
公开(公告)号：US08476158B2
公开(公告)日：2013-07-02
申请号：US13188475
申请日：2011-07-22
申请人： Hideyuki Ijiri , Seiji Nakahata
发明人： Hideyuki Ijiri , Seiji Nakahata
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L29/2003 , C30B29/406 , C30B33/00 , H01L33/0075 , H01L33/16
摘要： A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle Δα of −10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.
摘要翻译：一种GaN衬底存储方法，其在氧浓度不大于15体积％的气氛中，％，水蒸气浓度不大于20g / m 3，具有平面第一主面（1μm）的GaN衬底（1），并且其沿着第一主面（1m）的任意点（P）的面取向）并且从其外边缘分离出3mm以上的角度具有相对于倾斜50°的任意指定的晶面（1a）的平面取向为-10°以上，10°以下的偏斜角度Δα 或更多，90°或更小，相对于（0001）面或（0001）面的平面（1c），通过该任意点。以这种方式，可以获得存储其主面平面取向不同于（0001）或（000 1）的GaN衬底的方法，可以制造具有良好特性的半导体器件。

5. 发明申请

US20100326876A1 Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture 有权
标题翻译：存储GaN衬底，存储衬底和半导体器件的方法及其制造方法
公开(公告)号：US20100326876A1
公开(公告)日：2010-12-30
申请号：US12877086
申请日：2010-09-07
申请人： Hideyuki Ijiri , Seiji Nakahata
发明人： Hideyuki Ijiri , Seiji Nakahata
IPC分类号： B65D90/00
CPC分类号： H01L33/0075 , C30B29/406 , C30B33/00
摘要： Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the direction, and from 0° to 1° in the direction.
摘要翻译：提供一种存储可以制造具有良好特性的半导体器件的GaN衬底的方法，存储的衬底以及半导体器件以及制造半导体器件的方法。在GaN衬底存储方法中，将GaN衬底（1）储存在氧气浓度为18体积％的气氛中。％以下，和/或12g / m 3以下的水蒸气浓度。通过存储方法储存的GaN衬底上的第一主面的表面粗糙度Ra和第二主面的粗糙度Ra分别为不大于20nm且不大于20μm。此外，使GaN基板使得主面与（0001）面在<100°方向上形成从0.05°至2°的偏轴角度，并且在<0001方向上从0°到1°， 11 20>方向。

6. 发明授权

US07589000B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07589000B2
公开(公告)日：2009-09-15
申请号：US11643675
申请日：2006-12-22
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

7. 发明授权

US06987917B2 Optical fiber preform producing method, optical fiber preform, and optical fiber 失效
公开(公告)号：US06987917B2
公开(公告)日：2006-01-17
申请号：US10312911
申请日：2001-12-07
申请人： Masaaki Hirano , Masashi Onishi , Hideyuki Ijiri
发明人： Masaaki Hirano , Masashi Onishi , Hideyuki Ijiri
IPC分类号： G02B6/18 , C03B37/025
CPC分类号： G02B6/03627 , C03B37/01248 , C03B37/0126 , C03B2201/12 , C03B2201/31 , C03B2203/22 , C03B2203/36 , G02B6/02004 , G02B6/02238 , G02B6/02261 , G02B6/03611
摘要： An object of the present invention is to provide a method for manufacturing an optical fiber preform having a great diameter by reducing an eccentricity or a non-circularity of a core, an optical fiber preform having an small non-circularity and a complex refractive index profile, even with a great diameter, and an optical fiber that is applicable as a dispersion compensating fiber. The present invention involves a rod-in collapse process in which a glass rod is fixed within a glass pipe (or a dummy pipe attached to an end portion) via an aligning jig. The fixation via the aligning jig is made at one end or both ends, the aligning jig has a cylindrical shape with or without one or more reduced diameter portions. When fixed at one end, a heating and integrating process is preferably made from an opposite end. Employing the glass rod and the glass pipe having a refractive index distribution, a complex profile can be realized.

8. 发明授权

US07858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance 有权
标题翻译： III族氮化物晶体物质的制造方法和制造装置
公开(公告)号：US07858502B2
公开(公告)日：2010-12-28
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
发明人： Hitoshi Kasai , Takuji Okahisa , Shunsuke Fujita , Naoki Matsumoto , Hideyuki Ijiri , Fumitaka Sato , Kensaku Motoki , Seiji Nakahata , Koji Uematsu , Ryu Hirota
IPC分类号： H01L21/00
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

9. 发明申请

US20100009526A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20100009526A1
公开(公告)日：2010-01-14
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
发明人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
IPC分类号： H01L21/203
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

10. 发明申请

US20080003440A1 Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture 有权
标题翻译：存储GaN衬底，存储衬底和半导体器件的方法及其制造方法
公开(公告)号：US20080003440A1
公开(公告)日：2008-01-03
申请号：US11762786
申请日：2007-06-14
申请人： Hideyuki Ijiri , Seiji Nakahata
发明人： Hideyuki Ijiri , Seiji Nakahata
IPC分类号： B32B9/00 , B32B15/04
CPC分类号： H01L33/0075 , C30B29/406 , C30B33/00
摘要： Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a GaN substrate (1) is stored in an atmosphere having an oxygen concentration of 18 vol. % or less, and/or a water-vapor concentration of 12 g/m3 or less. Surface roughness Ra of a first principal face on, and roughness Ra of a second principal face on, the GaN substrate stored by the storing method are brought to no more than 20 nm and to no more than 20 μm, respectively. In addition, the GaN substrates are rendered such that the principal faces form an off-axis angle with the (0001) plane of from 0.05° to 2° in the direction, and from 0° to 1° in the direction.
摘要翻译：提供一种存储可以制造具有良好特性的半导体器件的GaN衬底的方法，存储的衬底以及半导体器件以及制造半导体器件的方法。在GaN衬底存储方法中，将GaN衬底（1）储存在氧气浓度为18体积％的气氛中。％以下，和/或12g / m 3以下的水蒸气浓度。通过存储方法存储的GaN衬底的第一主面的表面粗糙度Ra和第二主面的粗糙度Ra分别为20nm以上且不超过20μm。此外，使GaN基板在<1 100>方向上的主面与（0001）面成为0.05°至2°的离轴角，并且从在<11 20>方向上为0°至1°。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式