专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009009526A3 A PROCESSING SYSTEM PLATEN HAVING A VARIABLE THERMAL CONDUCTIVITY PROFILE 审中-公开
标题翻译：具有可变热导率分布的处理系统板
公开(公告)号：WO2009009526A3
公开(公告)日：2009-03-12
申请号：PCT/US2008069409
申请日：2008-07-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SINGH VIKRAM , MUKA RICHARD S , MILLER TIMOTHY J , CHOI CHANGHOON
发明人： SINGH VIKRAM , MUKA RICHARD S , MILLER TIMOTHY J , CHOI CHANGHOON
IPC分类号： H01L21/265
CPC分类号： H01L21/2236
摘要： A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.
摘要翻译：用于处理系统的台板包括由至少一个边界分开的第一和第二热区域。第一流体导管定位在第一热区域中。第二流体导管位于第二热区域中。具有第一输出端的流体储存器连接到第一流体导管，而第二输出端连接到第二流体导管。流体储存器向第一流体管道提供流体，其中第一流体条件向第一热区域提供第一热导率并且向第二流体管道提供流体，其中第二流体条件向第二热区域提供第二热导率，使得在台板中获得预定的热导率分布。

2. 发明申请

WO2009009526A2 A PROCESSING SYSTEM PLATEN HAVING A VARIABLE THERMAL CONDUCTIVITY PROFILE 审中-公开
标题翻译：具有可变热导率特性的加工系统板
公开(公告)号：WO2009009526A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/069409
申请日：2008-07-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , SINGH, Vikram , MUKA, Richard, S. , MILLER, Timothy, J. , CHOI, Changhoon
发明人： SINGH, Vikram , MUKA, Richard, S. , MILLER, Timothy, J. , CHOI, Changhoon
IPC分类号： H01L21/265
CPC分类号： H01L21/2236
摘要： A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen.
摘要翻译：用于处理系统的压板包括由至少一个边界分开的第一和第二热区域。第一流体管道定位在第一热区域中。第二流体管道定位在第二热区域中。具有第一输出的流体储存器联接到第一流体导管和耦合到第二流体导管的第二输出端。所述流体储存器用第一流体条件向第一流体管道提供流体，所述第一流体条件向第一热区域提供第一热导率，并且向第二流体管道提供流体，其具有向第二热区域提供第二热导率的第二流体条件，在压板中实现预定的导热率分布。

3. 发明申请

WO2008020955A2 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008020955A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/016460
申请日：2007-07-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
发明人： ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , AREVALO, Edwin, A. , FANG, Ziwei , SINGH, Vikram
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and ' to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post- cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre -heated platen and to remove the wafer from the platen to the post -cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹紧机构，用于将晶片固定到压板上并且在晶片和压板之间提供预定的热接触以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该设备还可以包括后冷却站，以在离子注入之后冷却晶片。该装置还可以包括晶片处理组件，以将晶片装载到预加热的压板上并将晶片从压板移除到后冷却站。

4. 发明申请

WO2008067213A3 TECHNIQUES FOR LOW TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子注入技术
公开(公告)号：WO2008067213A3
公开(公告)日：2008-09-12
申请号：PCT/US2007085119
申请日：2007-11-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , MUKA RICHARD S , LISCHER D JEFFREY
发明人： ENGLAND JONATHAN GERALD , MUKA RICHARD S , LISCHER D JEFFREY
IPC分类号： H01J37/317 , H01L21/00
CPC分类号： H01J37/3171 , H01J2237/2001 , H01L21/67005
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.
摘要翻译：公开了用于低温离子注入的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于低温离子注入的装置。该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并有助于晶片在至少一个维度上的移动。该设备还可以包括耦合到晶片支撑机构的冷却机构。该冷却机构可以包括制冷单元，用于使至少一种冷却剂从制冷单元循环到晶片支撑机构的刚性管闭环以及一个或多个旋转轴承以联接刚性管以适应晶圆在至少一个维度。

5. 发明申请

WO2008020972A3 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子注入技术
公开(公告)号：WO2008020972A3
公开(公告)日：2008-06-26
申请号：PCT/US2007016807
申请日：2007-07-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , WALTHER STEVEN R , MUKA RICHARD S , BLAKE JULIAN , MURPHY PAUL J , LIEBERT REUEL B
发明人： ENGLAND JONATHAN GERALD , WALTHER STEVEN R , MUKA RICHARD S , BLAKE JULIAN , MURPHY PAUL J , LIEBERT REUEL B
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该设备可以包括位于离子注入机中的终端站附近的预冷站。该设备还可以包括预冷站内的冷却机构。该设备可以进一步包括耦合到预冷站和终端站的加载组件。该设备可以另外包括与加载组件和冷却机构通信的控制器，以协调将晶片加载到预冷站中，将晶片冷却到预定的温度范围，并将冷却后的晶片加载到终端站中，经过冷却的晶片经历离子注入工艺。

6. 发明申请

WO2008067213A2 TECHNIQUES FOR LOW TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子植入技术
公开(公告)号：WO2008067213A2
公开(公告)日：2008-06-05
申请号：PCT/US2007/085119
申请日：2007-11-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , LISCHER, D., Jeffrey
发明人： ENGLAND, Jonathan, Gerald , MUKA, Richard, S. , LISCHER, D., Jeffrey
IPC分类号： H01J37/317 , H01L21/00
CPC分类号： H01J37/3171 , H01J2237/2001 , H01L21/67005
摘要： Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.
摘要翻译：公开了用于低温离子注入的技术。在一个特定的示例性实施例中，可以将技术实现为用于低温离子注入的装置。该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并且促进晶片在至少一个维度上的移动。该装置还可以包括联接到晶片支撑机构的冷却机构。冷却机构可以包括制冷单元，刚性管的闭环，以将来自制冷单元的至少一个冷却剂循环到晶片支撑机构，以及一个或多个旋转轴承，以连接刚性管以适应晶片的移动至少一个维度。

7. 发明申请

WO2008124555A1 TECHNIQUES FOR LOW-TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子植入技术
公开(公告)号：WO2008124555A1
公开(公告)日：2008-10-16
申请号：PCT/US2008/059334
申请日：2008-04-04
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , MUKA, Richard, S. , ROWLAND, Christopher, A. , ENGLAND, Jonathan, Gerald
发明人： MUKA, Richard, S. , ROWLAND, Christopher, A. , ENGLAND, Jonathan, Gerald
IPC分类号： C23C14/50 , H01J37/20 , H01L21/00 , H01L21/683 , H01L21/687
CPC分类号： F28D20/02 , C23C14/48 , C23C14/50 , C23C14/541 , F28F3/12 , H01J37/20 , H01J37/3171 , H01J2237/2001 , H01L21/67103 , H01L21/67109 , H01L21/67213 , H01L21/67248 , Y02E60/145
摘要： Techniques for low- temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as a wafer support assembly (300) for low- temperature ion implantation. The wafer support assembly (300) may comprise a base (32). The wafer support assembly (300) may also comprise a platen (30) configured to mount to the base (32) via one or more low- thermal-contact members (312), wherein the platen (30) has a heat capacity larger than that of a wafer mounted thereon, such that, if pre-conditioned to a predetermined temperature, the platen (30) causes the wafer temperature to stay within a range of the predetermined temperature during ion implantation.
摘要翻译：公开了用于低温离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于低温离子注入的晶片支撑组件（300）。晶片支撑组件（300）可以包括基座（32）。晶片支撑组件（300）还可以包括经由一个或多个低热接触构件（312）安装到基座（32）的压板（30），其中压板（30）具有大于如果预先调节到预定温度，则在离子注入期间，压板（30）使得晶片温度保持在预定温度的范围内。

8. 发明申请

WO2008036529A3 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008036529A3
公开(公告)日：2008-08-28
申请号：PCT/US2007078104
申请日：2007-09-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
发明人： BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

9. 发明申请

WO2008020955A3 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008020955A3
公开(公告)日：2008-06-19
申请号：PCT/US2007016460
申请日：2007-07-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , MUKA RICHARD S , AREVALO EDWIN A , FANG ZIWEI , SINGH VIKRAM
发明人： ENGLAND JONATHAN GERALD , MUKA RICHARD S , AREVALO EDWIN A , FANG ZIWEI , SINGH VIKRAM
IPC分类号： H01L21/00 , H01L21/68
CPC分类号： H01L21/67115 , H01J37/20 , H01J2237/2001 , H01J2237/31701 , H01J2237/336 , H01L21/67063 , H01L21/67069 , H01L21/67109 , H01L21/67213 , H01L21/6831
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post -cooling station.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该设备可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板包括：晶片夹持机构，用于将晶片固定到压板上并在晶片和压板之间提供预定的热接触，以及一个或多个加热元件以预热并将压板保持在高于室温的预定温度范围内。该装置还可以包括后冷却站，以在离子注入之后冷却晶片。该装置还可以包括晶片处理组件，以将晶片加载到预热台板上，并将晶片从压板移除到后冷却站。

10. 发明申请

WO2012094139A1 SYSTEM AND METHOD FOR GAS LEAK CONTROL IN A SUBSTRATE HOLDER 审中-公开
标题翻译：用于气体保护器中气体泄漏控制的系统和方法
公开(公告)号：WO2012094139A1
公开(公告)日：2012-07-12
申请号：PCT/US2011/065796
申请日：2011-12-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , MILLER, Timothy, J. , MUKA, Richard, S. , BLAKE, Julian, G.
发明人： MILLER, Timothy, J. , MUKA, Richard, S. , BLAKE, Julian, G.
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6831 , H01L21/67109
摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being Isolated from one another by a first sealing surface formed between the second surface of the heating block and the base. An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being Isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.
摘要翻译：静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。基座被布置成邻接加热块的第二表面的至少一部分。邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。基座被布置成邻接加热块的第二表面的至少一部分。邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式