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1. 发明申请

WO2008036529A3 TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 审中-公开
标题翻译：温度控制离子植入技术
公开(公告)号：WO2008036529A3
公开(公告)日：2008-08-28
申请号：PCT/US2007078104
申请日：2007-09-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
发明人： BLAKE JULIAN , ENGLAND JONATHAN GERALD , HOLDEN SCOTT , WALTHER STEVEN R , LIEBERT REUEL , MUKA RICHARD S , JEONG UKYO , LIU JINNING , SHIM KYU-HA , MEHTA SANDEEP
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature- controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
摘要翻译：公开了用于温度控制离子注入的技术。在一个特定的示例性实施例中，技术可以被实现为用于温度控制的离子注入的装置。该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。该装置还可以包括耦合到终端站的热调节单元。该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

2. 发明申请

WO2008020972A3 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：低温离子注入技术
公开(公告)号：WO2008020972A3
公开(公告)日：2008-06-26
申请号：PCT/US2007016807
申请日：2007-07-26
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , ENGLAND JONATHAN GERALD , WALTHER STEVEN R , MUKA RICHARD S , BLAKE JULIAN , MURPHY PAUL J , LIEBERT REUEL B
发明人： ENGLAND JONATHAN GERALD , WALTHER STEVEN R , MUKA RICHARD S , BLAKE JULIAN , MURPHY PAUL J , LIEBERT REUEL B
IPC分类号： H01L21/00
CPC分类号： H01L21/67213 , H01L21/26593 , H01L21/67098 , H01L21/67109 , H01L21/67248
摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
摘要翻译：公开了一种用于低温离子注入的技术。在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。该设备可以包括位于离子注入机中的终端站附近的预冷站。该设备还可以包括预冷站内的冷却机构。该设备可以进一步包括耦合到预冷站和终端站的加载组件。该设备可以另外包括与加载组件和冷却机构通信的控制器，以协调将晶片加载到预冷站中，将晶片冷却到预定的温度范围，并将冷却后的晶片加载到终端站中，经过冷却的晶片经历离子注入工艺。

3. 发明申请

WO2006026180A3 REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
标题翻译：降低CMOS器件中的源极和漏极寄生电容
公开(公告)号：WO2006026180A3
公开(公告)日：2006-08-03
申请号：PCT/US2005029454
申请日：2005-08-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
发明人： EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66575
摘要： A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.
摘要翻译：一种用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并将中和物质引入到pn结附近的衬底中，以减少与 pn结。基于半导体的器件包括具有第一和第二掺杂剂的半导体衬底和中和物质。第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分以减少与pn结相关联的电容。

4. 发明申请

WO2007142912A2 NON-UNIFORM ION IMPLANTATION 审中-公开
标题翻译：非均匀离子植入
公开(公告)号：WO2007142912A2
公开(公告)日：2007-12-13
申请号：PCT/US2007012604
申请日：2007-05-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R , MEHTA SANDEEP
发明人： WALTHER STEVEN R , MEHTA SANDEEP
CPC分类号： H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
摘要： A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion impianter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion impianter is also provided.
摘要翻译：一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制当离子束入射到工件的前表面上时直接产生所需的二维非均匀剂量图案，该工件相对于离子束在工件表面的一次通过中，离子夹持器的至少一个参数。光束可以是扫描光束或带状光束。还提供了一种离子夹持器。

5. 发明申请

WO2009052453A2 PLASMA DOPING SYSTEM WITH CHARGE CONTROL 审中-公开
标题翻译：带充电控制的等离子体掺杂系统
公开(公告)号：WO2009052453A2
公开(公告)日：2009-04-23
申请号：PCT/US2008080400
申请日：2008-10-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
发明人： JEON YONGBAE , SINGH VIKRAM , MILLER TIMOTHY J , FANG ZIWEI , WALTHER STEVEN R , GUPTA ATUL
IPC分类号： H01L21/22 , C23C14/00 , C23C16/00 , H01J37/32 , H01L21/26
CPC分类号： H01J37/32642 , H01J37/32412 , H01J37/32935
摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.
摘要翻译：等离子体掺杂的方法包括在等离子体室中产生包括支撑衬底的台板附近的掺杂剂离子的等离子体。台板被偏压为具有负电位的偏压电压波形，该偏压电压波形吸引等离子体中的离子到等离子体掺杂的基板。监测至少一个传感器测量与有利于形成放电的充电条件有关的数据。响应于所测量的数据修改至少一个等离子体工艺参数，从而降低形成放电的可能性。

6. 发明申请

WO2009009272A3 CONFORMAL DOPING USING HIGH NEUTRAL PLASMA IMPLANT 审中-公开
标题翻译：均匀掺杂使用高中性等离子体植入
公开(公告)号：WO2009009272A3
公开(公告)日：2009-03-05
申请号：PCT/US2008067587
申请日：2008-06-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R
发明人： WALTHER STEVEN R
IPC分类号： C23C16/00 , H01L21/26
CPC分类号： H01J37/32339 , H01J37/32412
摘要： A plasma doping apparatus includes a plasma source that generates a pulsed plasma. A platen supports a substrate proximate to the plasma source for plasma doping. A structure absorbs a film which provides a plurality of neutrals when desorbed. A bias voltage power supply generates a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A radiation source irradiates the film absorbed on the structure, thereby desorbing the film and generating a plurality of neutrals that scatter ions from the plasma while the ions are being attracted to the substrate, thereby performing conformal plasma doping.
摘要翻译：等离子体掺杂设备包括产生脉冲等离子体的等离子体源。台板支撑靠近等离子体源的衬底用于等离子体掺杂。结构吸收在解吸时提供多个中性物的膜。偏置电压电源产生具有负电位的偏置电压波形，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。辐射源照射吸收在结构上的膜，从而解吸膜并产生多个中性粒子，这些中性粒子在离子被吸引到基底上时从等离子体中散射出离子，从而执行共形等离子体掺杂。

7. 发明申请

WO2005115104A3 METHODS FOR STABLE AND REPEATABLE PLASMA ION IMPLANTATION 审中-公开
标题翻译：用于稳定和可重复等离子体植入的方法
公开(公告)号：WO2005115104A3
公开(公告)日：2006-07-06
申请号：PCT/US2005016219
申请日：2005-05-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R , FANG ZIWEI , TOCCO JUSTIN , ELLIS CARLETON F III
发明人： WALTHER STEVEN R , FANG ZIWEI , TOCCO JUSTIN , ELLIS CARLETON F III
IPC分类号： H01J37/32 , C23C14/48 , H01L21/223 , H01L21/26 , H01L21/42
CPC分类号： H01J37/32412 , C23C14/48 , H01L21/2236
摘要： A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber (10), a source for producing a plasma (40) in the process chamber, a platen (14) for holding a substrate (20) in the process chamber, an anode (24) spaced from the platen, and a pulse source (30) for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.
摘要翻译：一种用于等离子体离子注入衬底的方法包括：提供等离子体离子注入系统，其具有处理室（10），用于在处理室中产生等离子体（40）的源，用于保持衬底（20）的压板（14）在处理室中，与压板间隔开的阳极（24）和用于产生用于将离子从等离子体加速到衬底中的注入脉冲的脉冲源（30）。在一个方面，改变植入过程的参数以至少部分地补偿被植入的离子与衬底之间的相互作用的不期望的影响。例如，剂量率，离子能量或两者可以在植入过程期间变化。在另一方面，预处理步骤包括将离子从等离子体加速到阳极，以引起来自阳极的二次电子的发射，以及将二次电子从阳极加速到衬底以预处理衬底。

8. 发明申请

WO2010080390A3 CONDENSIBLE GAS COOLING SYSTEM 审中-公开
标题翻译：冷凝式气体冷却系统
公开(公告)号：WO2010080390A3
公开(公告)日：2010-09-16
申请号：PCT/US2009068002
申请日：2009-12-15
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , WALTHER STEVEN R
发明人： WALTHER STEVEN R
IPC分类号： H01L21/265 , H01L21/683 , H01L21/687
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/002 , H01J2237/2001
摘要： A workpiece cooling system and method are disclosed. Transferring heat away from a workpiece, such as a semiconductor wafer during ion implantation, is essential. Typically this heat is transferred to the workpiece support, or platen. In one embodiment, the desired operating temperature is determined. Based on this, a gas having a vapor pressure within a desired range, such as 10-50 torr, is selected. This range is required to be sufficiently low so as to be less than the clamping force. This condensible gas is used to fill the volume between the workpiece and the workpiece support. Heat transfer occurs based on adsorption and desorption, thereby offering improved transfer properties than traditionally employed gases, such as helium, hydrogen, nitrogen, argon and air.
摘要翻译：公开了一种工件冷却系统和方法。至关重要的是在离子注入期间从工件（例如半导体晶片）传递热量。典型地，这种热量被传递到工件支撑件或压板。在一个实施例中，确定期望的操作温度。基于此，选择蒸汽压在期望范围内，例如10-50托的气体。该范围要求足够低，以便小于夹紧力。该可冷凝气体用于填充工件和工件支架之间的空间。基于吸附和解吸进行传热，从而提供比传统使用的气体如氦气，氢气，氮气，氩气和空气改进的传递性能。

9. 发明申请

WO2009039264A3 WAFER BONDING ACTIVATED BY ION IMPLANTATION 审中-公开
标题翻译：离子植入激活的波形粘结
公开(公告)号：WO2009039264A3
公开(公告)日：2009-05-28
申请号：PCT/US2008076840
申请日：2008-09-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EROKHIN YURI , SULLIVAN PAUL , WALTHER STEVEN R , NUNAN PETER
发明人： EROKHIN YURI , SULLIVAN PAUL , WALTHER STEVEN R , NUNAN PETER
IPC分类号： H01L21/60 , H01L21/265
CPC分类号： H01L21/76251 , H01J37/20 , H01J37/3171 , H01J2237/201 , H01J2237/202 , H01L21/26506 , H01L21/6835 , H01L2221/68359 , H01L2924/30105
摘要： A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
摘要翻译：公开了一种通过离子注入激活的晶片接合两个基板的方法。原位离子键合室允许在制造生产线中使用的现有工艺工具中发生离子活化和结合。在低注入能量下进行至少一个衬底的离子激活，以确保薄表面层下面的晶片材料不受离子激活的影响。

10. 发明申请

WO2009033134A3 A PATTERNED ASSEMBLY FOR MANUFACTURING A SOLAR CELL AND A METHOD THEREOF 审中-公开
标题翻译：用于制造太阳能电池的图案组件及其方法
公开(公告)号：WO2009033134A3
公开(公告)日：2009-05-22
申请号：PCT/US2008075551
申请日：2008-09-08
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , SULLIVAN PAUL , NUNAN PETER , WALTHER STEVEN R
发明人： SULLIVAN PAUL , NUNAN PETER , WALTHER STEVEN R
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , H01L31/03529 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.
摘要翻译：公开了用于制造太阳能电池的装置和方法。在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述第一区域外的区域。

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