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1. 发明申请

US20100075027A1 CAP METAL FORMING METHOD 有权
标题翻译： CAP金属成型方法
公开(公告)号：US20100075027A1
公开(公告)日：2010-03-25
申请号：US12405597
申请日：2009-03-17
申请人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
发明人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
IPC分类号： B05D3/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译：提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

2. 发明授权

US09421569B2 Plating apparatus, plating method and storage medium 有权
标题翻译：电镀装置，电镀方法和储存介质
公开(公告)号：US09421569B2
公开(公告)日：2016-08-23
申请号：US13981124
申请日：2012-01-13
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05C5/00 , B05C9/14 , H01L21/3205 , B05B7/16 , C23C18/16 , H01L21/288 , B05D1/02 , C25D17/00 , H01L21/67 , G03F7/16
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译：电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。

3. 发明申请

US20140302242A1 PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM HAVING PLATING PROGRAM STORED THEREON 有权
标题翻译：电镀设备，存放方法及其储存介质
公开(公告)号：US20140302242A1
公开(公告)日：2014-10-09
申请号：US13881431
申请日：2011-08-24
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05B12/14 , B05D1/02 , B05D7/00 , B05B12/04
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.
摘要翻译：电镀装置1可以通过将电镀液供给到基板2的表面来进行电镀处理。电镀装置1包括：基板旋转保持器，其构造成保持和旋转基板2; 电镀液供给单元29,30，被配置为向基板2的表面供给不同种类的电镀液; 电镀液排出单元31，其被配置为根据电镀液的种类排出从基板2分散的镀液; 以及控制器32，被配置为控制基板旋转保持器25，电镀液供给单元29和30，电镀液排出单元31.在保持基板2并旋转的同时，在基板2的表面上进行电镀处理依次通过将不同种类的电镀液体供给到基板2的表面上。

4. 发明申请

US20130302525A1 PLATING APPARATUS, PLATING METHOD AND STORAGE MEDIUM 有权
标题翻译：电镀设备，镀层方法和储存介质
公开(公告)号：US20130302525A1
公开(公告)日：2013-11-14
申请号：US13981124
申请日：2012-01-13
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05C5/00 , B05D1/02
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译：电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。

5. 发明授权

US09731322B2 Plating apparatus, plating method and storage medium having plating program stored thereon 有权
公开(公告)号：US09731322B2
公开(公告)日：2017-08-15
申请号：US13881431
申请日：2011-08-24
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05D7/00 , B05B12/04 , B05B12/14 , B05D1/02 , C25D17/00 , C23C18/16 , C23C18/31 , C23C18/54
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

6. 发明授权

US08206785B2 Cap metal forming method 有权
标题翻译：盖金属成型方法
公开(公告)号：US08206785B2
公开(公告)日：2012-06-26
申请号：US12405597
申请日：2009-03-17
申请人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
发明人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
IPC分类号： B05D1/36 , B05D5/00 , B05D1/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译：提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

7. 发明授权

US08770138B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08770138B2
公开(公告)日：2014-07-08
申请号：US13180702
申请日：2011-07-12
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： B05C11/10 , B05B13/02 , B05B3/00
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

8. 发明授权

US08003509B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08003509B2
公开(公告)日：2011-08-23
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

9. 发明申请

US20110265718A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20110265718A1
公开(公告)日：2011-11-03
申请号：US13180702
申请日：2011-07-12
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： B05B13/04 , H01L21/00 , B05C11/10
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

10. 发明申请

US20090253258A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

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