专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明授权

US08796809B2 Varactor diode with doped voltage blocking layer 有权
标题翻译：具有掺杂电压阻挡层的变容二极管
公开(公告)号：US08796809B2
公开(公告)日：2014-08-05
申请号：US12206209
申请日：2008-09-08
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： H01L29/93 , H01L21/329 , H01L27/08 , H01L29/66 , H01L29/36 , H01L29/47 , H01L29/40 , H01L29/16 , H01L29/20 , H01L29/267
CPC分类号： H01L29/93 , H01L27/0808 , H01L27/0811 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L29/36 , H01L29/402 , H01L29/47 , H01L29/66174
摘要： A varactor diode includes a contact layer having a first conductivity type, a voltage blocking layer having the first conductivity and a first net doping concentration on the contact layer, a blocking junction on the voltage blocking layer, and a plurality of discrete doped regions in the voltage blocking layer and spaced apart from the carrier injection junction. The plurality of discrete doped regions have the first conductivity type and a second net doping concentration that is higher than the first net doping concentration, and the plurality of discrete doped regions are configured to modulate the capacitance of the varactor diode as a depletion region of the varactor diode expands in response to a reverse bias voltage applied to the blocking junction. Related methods of forming a varactor diode are also disclosed.
摘要翻译：变容二极管包括具有第一导电类型的接触层，具有第一导电性的电压阻挡层和在接触层上的第一净掺杂浓度，电压阻挡层上的阻挡结，以及在该阻抗层中的多个离散掺杂区电压阻挡层并与载流子注入结隔开。所述多个离散掺杂区域具有高于第一净掺杂浓度的第一导电类型和第二净掺杂浓度，并且所述多个离散掺杂区域被配置为调制变容二极管的电容作为所述第一净掺杂浓度的耗尽区变容二极管响应于施加到阻塞结的反向偏置电压而膨胀。还公开了形成变容二极管的相关方法。

3. 发明申请

US20120065880A1 Ground Location of Work Truck 有权
标题翻译：工作车的地面位置
公开(公告)号：US20120065880A1
公开(公告)日：2012-03-15
申请号：US13231793
申请日：2011-09-13
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： G01C21/00
CPC分类号： G01C21/206 , G01S1/70
摘要： A vehicle tracking system tracks the position of at least one vehicle and displays the tracked position. The system includes a plurality of beacons, at least one provided on each vehicle, configured to emit a corresponding identifying signal. A camera is configured to generate image data including region data based on a region in which the vehicles may be located, and beacon data based on the identifying signals corresponding to the beacons located in the region. A controller is configured to process the beacon data to generate position data based on a corresponding position of the beacons located in the region and to generate identification data, which corresponds to each of the identifying signals emitted by the beacons located in the region. Also, the controller outputs at least one of the image data, the position data, and the identification data to the monitor.
摘要翻译：车辆跟踪系统跟踪至少一辆车辆的位置并显示跟踪位置。该系统包括多个信标，至少一个设置在每个车辆上的信标，被配置为发射相应的识别信号。相机被配置为基于与位于该区域中的信标相对应的识别信号，生成基于车辆可能位于的区域的包括区域数据的图像数据和信标数据。控制器被配置为处理信标数据以基于位于该区域中的信标的对应位置产生位置数据，并且生成对应于位于该区域中的信标发出的每个识别信号的识别数据。此外，控制器将至少一个图像数据，位置数据和识别数据输出到监视器。

4. 发明授权

US07745851B2 Polytype hetero-interface high electron mobility device and method of making 有权
标题翻译：多型异质界面高电子迁移率器件及其制备方法
公开(公告)号：US07745851B2
公开(公告)日：2010-06-29
申请号：US11783958
申请日：2007-04-13
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/1608 , H01L29/2003 , H01L29/66431
摘要： A high electron mobility device and method of making is provided whereby a two-dimensional electron gas is formed at a hetero-junction or hetero-interface between different polytypes of a semiconductor material. The different crystal forms or polytypes of the semiconductor material having different electronic bandgaps are used to provide the bandgap necessary to form the two-dimensional electron gas.
摘要翻译：提供高电子迁移率器件和制造方法，由此在半导体材料的不同多型之间的异质结或异质界面处形成二维电子气。使用具有不同电子带隙的半导体材料的不同晶体形式或多型式来提供形成二维电子气体所需的带隙。

5. 发明申请

US20100041195A1 METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS 有权
标题翻译：用于高功率器件应用的硅碳化物自对准外延MOSFET的制造方法
公开(公告)号：US20100041195A1
公开(公告)日：2010-02-18
申请号：US12603603
申请日：2009-10-22
申请人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
发明人： Christopher Harris , Kent Bertilsson , Andrei Konstantinov
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/42368 , H01L29/66068 , Y10S438/903 , Y10S438/969
摘要： A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer.
摘要翻译：自对准的碳化硅功率金属氧化物半导体场效应晶体管包括形成在第一层中的沟槽，其具有在沟槽内外延再生长的基极区域和源极区域。通过源区域形成窗口，并且在沟槽的中间区域内形成窗口。源极触点形成在与基极和源极区域接触的窗口内。栅极氧化层形成在沟槽的周边区域和第一层的表面上的源极和基极区域上。在沟槽的周边区域的基极区域上方的栅极氧化层上形成栅电极，在第一层的第二面上形成漏电极。

6. 发明申请

US20090224354A1 JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS 审中-公开
标题翻译：带有子通道的JUNCTION BARRIER肖特基二极管
公开(公告)号：US20090224354A1
公开(公告)日：2009-09-10
申请号：US12042614
申请日：2008-03-05
申请人： Andrei Konstantinov , Christopher Harris , Jan-Olov Svederg
发明人： Andrei Konstantinov , Christopher Harris , Jan-Olov Svederg
IPC分类号： H01L29/872 , H01L21/00
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/66143 , H01L29/66212
摘要： A junction barrier Schottky diode is provided as having submicron channel width between implant regions by way of a process including the use of spacer technology. On-state resistance is lowered by providing the implant regions in a channel layer having increased dopant concentration.
摘要翻译：通过包括使用间隔物技术的方法，提供了一个结屏障肖特基二极管，其具有在植入区域之间的亚微米通道宽度。通过在具有增加的掺杂剂浓度的沟道层中提供注入区域来降低导通电阻。

7. 发明申请

US20090171874A1 METHOD AND APPARATUS FOR CONFIGURING A COMMUNICATION CHANNEL 失效
标题翻译：用于配置通信信道的方法和装置
公开(公告)号：US20090171874A1
公开(公告)日：2009-07-02
申请号：US12064222
申请日：2006-08-17
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： G06N3/04 , G06F17/10 , H03K17/00
CPC分类号： H04L5/1438
摘要： A method of configuring a communication channel prior to the transmission of an input signal along the communication channel, the communication channel comprising a plurality of sub-channels, the method comprising determining the strength of the input signal and in accordance with the determined signal strength, selecting a set of the plurality of sub-channels and transmitting said in put signal along the set of sub-channels in parallel, wherein each of the sub-channels has a predetermined noise characteristic such that the set of selected sub-channels exhibits a combined noise characteristic in which the standard deviation of the noise is proportional to the signal strength.
摘要翻译：一种在沿着通信信道发送输入信号之前配置通信信道的方法，所述通信信道包括多个子信道，该方法包括确定输入信号的强度并根据所确定的信号强度，选择一组多个子信道并且沿着所述子信道集合并行地发送所述输入信号，其中每个子信道具有预定的噪声特性，使得所选择的子信道的集合表现出组合噪声特性，其中噪声的标准偏差与信号强度成正比。

8. 发明申请

US20080147715A1 Method, apparatus and program product for media identification and tracking associated user preferences 有权
标题翻译：用于介质识别和跟踪相关用户偏好的方法，设备和程序产品
公开(公告)号：US20080147715A1
公开(公告)日：2008-06-19
申请号：US11892015
申请日：2007-08-17
申请人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
发明人： Mark L. Woodward , E. Oliver Jones , Gene S. Fein , Christopher Harris , Steve S. Sherman , Bennie Jones , Anthony Salotto
IPC分类号： G06F15/16 , G06F17/30
CPC分类号： G06Q30/02 , G11B27/322 , H04L67/22
摘要： Collecting user preference information related to a playing media recording is accomplished by gathering descriptive information related to the playing media recording from a media player program presenting the playing media recording and determining if tags are embedded in the media recording and gathering descriptive information related to the playing media recording from the tags embedded in the playing media recording, if the tags exist. Further, determining if a table of contents exists on the media recording and gathering a table of contents for a collection containing the playing media recording by identifying the collection using a concatenation of track lengths identifier generation technique, the table of contents exists. Then assembling the descriptive information into a media recording information packet and sending the media recording information packet to a server computer, resulting in a collection of user preference information related to the playing media recording.
摘要翻译：收集与播放媒体记录相关的用户偏好信息是通过从呈现播放媒体记录的媒体播放器节目收集与播放媒体记录有关的描述性信息，并且确定标签是否被嵌入在媒体记录中并且收集与播放有关的描述信息如果标签存在，则从嵌入在播放媒体记录中的标签的媒体记录。此外，通过使用音轨长度标识符生成技术的级联来确定媒体记录上是否存在内容表并收集包含播放媒体记录的集合的内容表，存在目录。然后将描述信息组装到媒体记录信息包中，并将媒体记录信息包发送到服务器计算机，从而收集与播放媒体记录相关的用户偏好信息。

9. 发明申请

US20070262321A1 Lateral Field Effect Transistor and Its Fabrication Comprising a Spacer Layer Above and Below the Channel Layer 有权
标题翻译：横向场效应晶体管及其制造包括通道层上方和下方的间隔层
公开(公告)号：US20070262321A1
公开(公告)日：2007-11-15
申请号：US11661962
申请日：2004-09-01
申请人： Christopher Harris , Andrei Konstantinov
发明人： Christopher Harris , Andrei Konstantinov
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/1029 , H01L29/1058 , H01L29/1608 , H01L29/2003 , H01L29/802 , H01L29/808 , H01L29/812
摘要： A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a highly doped second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and/or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the highly doped second-conductivity-type base layer (8).
摘要翻译：一种用于高开关频率的横向场效应晶体管，具有横向隔开的源区域层（4）和漏极区域层（5）以及高度掺杂的第一导电类型，具有较低掺杂浓度的第一导电型沟道层（6）横向延伸并互连源区域层（4）和漏极区域层（5）。晶体管具有布置成控制沟道层（6）的性质的栅电极（7），并且布置在沟道层（6）下方的高度掺杂的第二导电型基极层（8）至少部分地与栅极电极（7），并且在与漏极区域（5）的横向距离处，高掺杂的第二导电型基极层（8）与源区域层（4）短路。晶体管还具有以下至少一个：a）具有与沟道层（6）相邻并位于沟道层（6）和栅电极（7）之间的半导体材料的间隔层（10），至少在栅极电极（7）的附近，和/或b）具有与沟道层（6）相邻并位于沟道层（6）和高度掺杂的第二导电型基底之间的半导体材料的间隔层（9）层（8）。

10. 发明申请

US20060281238A1 Method of manufacturing an adaptive AlGaN buffer layer 有权
标题翻译：制造自适应AlGaN缓冲层的方法
公开(公告)号：US20060281238A1
公开(公告)日：2006-12-14
申请号：US11474431
申请日：2006-06-26
申请人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
发明人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译：补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或在基板的近表面区域内的过量电荷。缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式